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    Magnetoresistive element and magnetic memory
    1.
    发明授权
    Magnetoresistive element and magnetic memory 有权
    磁阻元件和磁记忆体

    公开(公告)号：US09018719B2

    公开(公告)日：2015-04-28

    申请号：US13424301

    申请日：2012-03-19

    申请人： Katsuya Nishiyama ,  Hisanori Aikawa ,  Tadashi Kai ,  Toshihiko Nagase ,  Koji Ueda ,  Hiroaki Yoda

    发明人： Katsuya Nishiyama ,  Hisanori Aikawa ,  Tadashi Kai ,  Toshihiko Nagase ,  Koji Ueda ,  Hiroaki Yoda

    IPC分类号： H01L29/82 ,  G11C11/16 ,  H01L43/08 ,  H01L27/22

    CPC分类号： G11C11/16 ,  G11C11/161 ,  G11C11/1675 ,  H01L27/228 ,  H01L43/08

    摘要： According to one embodiment, a magnetoresistive element includes a storage layer having a perpendicular and variable magnetization, a reference layer having a perpendicular and invariable magnetization, a shift adjustment layer having a perpendicular and invariable magnetization in a direction opposite to a magnetization of the reference layer, a first nonmagnetic layer between the storage layer and the reference layer, and a second nonmagnetic layer between the reference layer and the shift adjustment layer. A switching magnetic field of the reference layer is equal to or smaller than a switching magnetic field of the storage layer, and a magnetic relaxation constant of the reference layer is larger than a magnetic relaxation constant of the storage layer.

    摘要翻译： 根据一个实施例，磁阻元件包括具有垂直和可变磁化的存储层，具有垂直和不变磁化的参考层，在与参考层的磁化相反的方向上具有垂直和不变磁化的位移调整层 存储层和参考层之间的第一非磁性层，以及参考层和位移调整层之间的第二非磁性层。 参考层的开关磁场等于或小于存储层的切换磁场，并且参考层的磁性松弛常数大于存储层的磁性松弛常数。

    MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY
    2.
    发明申请
    MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY 有权
    磁性元件和磁记忆

    公开(公告)号：US20130001714A1

    公开(公告)日：2013-01-03

    申请号：US13424301

    申请日：2012-03-19

    申请人： Katsuya Nishiyama ,  Hisanori Aikawa ,  Tadashi Kai ,  Toshihiko Nagase ,  Koji Ueda ,  Hiroaki Yoda

    发明人： Katsuya Nishiyama ,  Hisanori Aikawa ,  Tadashi Kai ,  Toshihiko Nagase ,  Koji Ueda ,  Hiroaki Yoda

    IPC分类号： H01L29/82

    CPC分类号： G11C11/16 ,  G11C11/161 ,  G11C11/1675 ,  H01L27/228 ,  H01L43/08

    摘要： According to one embodiment, a magnetoresistive element includes a storage layer having a perpendicular and variable magnetization, a reference layer having a perpendicular and invariable magnetization, a shift adjustment layer having a perpendicular and invariable magnetization in a direction opposite to a magnetization of the reference layer, a first nonmagnetic layer between the storage layer and the reference layer, and a second nonmagnetic layer between the reference layer and the shift adjustment layer. A switching magnetic field of the reference layer is equal to or smaller than a switching magnetic field of the storage layer, and a magnetic relaxation constant of the reference layer is larger than a magnetic relaxation constant of the storage layer.

    摘要翻译： 根据一个实施例，磁阻元件包括具有垂直和可变磁化的存储层，具有垂直和不变磁化的参考层，在与参考层的磁化相反的方向上具有垂直和不变磁化的位移调整层 存储层和参考层之间的第一非磁性层，以及参考层和位移调整层之间的第二非磁性层。 参考层的开关磁场等于或小于存储层的切换磁场，并且参考层的磁性松弛常数大于存储层的磁性松弛常数。

    MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY
    5.
    发明申请
    MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY 有权
    磁性元件和磁记忆

    公开(公告)号：US20130020659A1

    公开(公告)日：2013-01-24

    申请号：US13628724

    申请日：2012-09-27

    申请人： Tadaomi Daibou ,  Eiji Kitagawa ,  Yutaka Hashimoto ,  Masaru Tokou ,  Toshihiko Nagase ,  Katsuya Nishiyama ,  Koji Ueda ,  Makoto Nagamine ,  Tadashi Kai ,  Hiroaki Yoda

    发明人： Tadaomi Daibou ,  Eiji Kitagawa ,  Yutaka Hashimoto ,  Masaru Tokou ,  Toshihiko Nagase ,  Katsuya Nishiyama ,  Koji Ueda ,  Makoto Nagamine ,  Tadashi Kai ,  Hiroaki Yoda

    IPC分类号： H01L29/82

    CPC分类号： H01L43/08 ,  H01L27/228 ,  H01L43/10

    摘要： A magnetoresistive element according to an embodiment includes: a first ferromagnetic layer having an axis of easy magnetization in a direction perpendicular to a film plane; a second ferromagnetic layer having an axis of easy magnetization in a direction perpendicular to a film plane; a nonmagnetic layer placed between the first ferromagnetic layer and the second ferromagnetic layer; a first interfacial magnetic layer placed between the first ferromagnetic layer and the nonmagnetic layer; and a second interfacial magnetic layer placed between the second ferromagnetic layer and the nonmagnetic layer. The first interfacial magnetic layer includes a first interfacial magnetic film, a second interfacial magnetic film placed between the first interfacial magnetic film and the nonmagnetic layer and having a different composition from that of the first interfacial magnetic film, and a first nonmagnetic film placed between the first interfacial magnetic film and the second interfacial magnetic film.

    摘要翻译： 根据实施例的磁致电阻元件包括：在垂直于膜平面的方向上具有容易磁化的轴的第一铁磁层; 第二铁磁层，其在垂直于膜平面的方向上具有容易磁化的轴; 放置在第一铁磁层和第二铁磁层之间的非磁性层; 置于第一铁磁层和非磁性层之间的第一界面磁性层; 以及置于第二铁磁层和非磁性层之间的第二界面磁性层。 第一界面磁性层包括第一界面磁性膜，位于第一界面磁性膜和非磁性层之间并具有与第一界面磁性膜不同的组成的第二界面磁性膜，以及位于第一界面磁性膜之间的第一非磁性膜 第一界面磁性膜和第二界面磁性膜。

    MAGNETORESISTIVE ELEMENT AND MAGNETIC RANDOM ACCESS MEMORY
    6.
    发明申请
    MAGNETORESISTIVE ELEMENT AND MAGNETIC RANDOM ACCESS MEMORY 有权
    磁性元件和磁性随机存取存储器

    公开(公告)号：US20120069642A1

    公开(公告)日：2012-03-22

    申请号：US13236589

    申请日：2011-09-19

    申请人： Koji Ueda ,  Tadashi Kai ,  Toshihiko Nagase ,  Katsuya Nishiyama ,  Eiji Kitagawa ,  Tadaomi Daibou ,  Makoto Nagamine ,  Hiroaki Yoda

    发明人： Koji Ueda ,  Tadashi Kai ,  Toshihiko Nagase ,  Katsuya Nishiyama ,  Eiji Kitagawa ,  Tadaomi Daibou ,  Makoto Nagamine ,  Hiroaki Yoda

    IPC分类号： G11C11/15 ,  H01L29/82

    CPC分类号： H01L43/08 ,  G11C11/16 ,  G11C11/1659 ,  H01F10/123 ,  H01F10/3254 ,  H01F10/3263 ,  H01F10/3286 ,  H01L43/10

    摘要： According to one embodiment, a magnetoresistive element includes an electrode layer, a first magnetic layer, a second magnetic layer and a nonmagnetic layer. The electrode layer includes a metal layer including at least one of Mo, Nb, and W. The first magnetic layer is disposed on the metal layer to be in contact with the metal layer and has a magnetization easy axis in a direction perpendicular to a film plane and is variable in magnetization direction. The second magnetic layer is disposed on the first magnetic layer and has a magnetization easy axis in the direction perpendicular to the film plane and is invariable in magnetization direction. The nonmagnetic layer is provided between the first and second magnetic layers. The magnetization direction of the first magnetic layer is varied by a current that runs through the first magnetic layer, the nonmagnetic layer, and the second magnetic layer.

    摘要翻译： 根据一个实施例，磁阻元件包括电极层，第一磁性层，第二磁性层和非磁性层。 电极层包括包括Mo，Nb和W中的至少一种的金属层。第一磁性层设置在与金属层接触的金属层上，并且在垂直于膜的方向上具有易磁化轴 平面，并且在磁化方向上是可变的。 第二磁性层设置在第一磁性层上，并且在垂直于膜平面的方向上具有易磁化轴，并且在磁化方向上是不变的。 非磁性层设置在第一和第二磁性层之间。 第一磁性层的磁化方向由穿过第一磁性层，非磁性层和第二磁性层的电流而变化。

    MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY
    7.
    发明申请
    MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY 有权
    磁性元件和磁记忆

    公开(公告)号：US20120068139A1

    公开(公告)日：2012-03-22

    申请号：US13043064

    申请日：2011-03-08

    申请人： Tadaomi Daibou ,  Eiji Kitagawa ,  Yutaka Hashimoto ,  Masaru Tokou ,  Toshihiko Nagase ,  Katsuya Nishiyama ,  Koji Ueda ,  Makoto Nagamine ,  Tadashi Kai ,  Hiroaki Yoda

    发明人： Tadaomi Daibou ,  Eiji Kitagawa ,  Yutaka Hashimoto ,  Masaru Tokou ,  Toshihiko Nagase ,  Katsuya Nishiyama ,  Koji Ueda ,  Makoto Nagamine ,  Tadashi Kai ,  Hiroaki Yoda

    IPC分类号： H01L45/00

    CPC分类号： H01L43/08 ,  H01L27/228 ,  H01L43/10

    摘要： A magnetoresistive element according to an embodiment includes: a first ferromagnetic layer having an axis of easy magnetization in a direction perpendicular to a film plane; a second ferromagnetic layer having an axis of easy magnetization in a direction perpendicular to a film plane; a nonmagnetic layer placed between the first ferromagnetic layer and the second ferromagnetic layer; a first interfacial magnetic layer placed between the first ferromagnetic layer and the nonmagnetic layer; and a second interfacial magnetic layer placed between the second ferromagnetic layer and the nonmagnetic layer. The first interfacial magnetic layer includes a first interfacial magnetic film, a second interfacial magnetic film placed between the first interfacial magnetic film and the nonmagnetic layer and having a different composition from that of the first interfacial magnetic film, and a first nonmagnetic film placed between the first interfacial magnetic film and the second interfacial magnetic film.

    摘要翻译： 根据实施例的磁阻元件包括：在垂直于膜平面的方向上具有容易磁化的轴的第一铁磁层; 第二铁磁层，其在垂直于膜平面的方向上具有容易磁化的轴; 放置在第一铁磁层和第二铁磁层之间的非磁性层; 置于第一铁磁层和非磁性层之间的第一界面磁性层; 以及置于第二铁磁层和非磁性层之间的第二界面磁性层。 第一界面磁性层包括第一界面磁性膜，位于第一界面磁性膜和非磁性层之间并具有与第一界面磁性膜不同的组成的第二界面磁性膜，以及位于第一界面磁性膜之间的第一非磁性膜 第一界面磁性膜和第二界面磁性膜。

    Magnetoresistive effect element and magnetic memory
    8.
    发明授权
    Magnetoresistive effect element and magnetic memory 有权
    磁阻效应元件和磁存储器

    公开(公告)号：US08750029B2

    公开(公告)日：2014-06-10

    申请号：US13233420

    申请日：2011-09-15

    申请人： Eiji Kitagawa ,  Tadaomi Daibou ,  Tadashi Kai ,  Toshihiko Nagase ,  Katsuya Nishiyama ,  Koji Ueda ,  Hiroaki Yoda

    发明人： Eiji Kitagawa ,  Tadaomi Daibou ,  Tadashi Kai ,  Toshihiko Nagase ,  Katsuya Nishiyama ,  Koji Ueda ,  Hiroaki Yoda

    IPC分类号： G11C11/15 ,  H01L43/08

    CPC分类号： H01L27/228 ,  G11C11/161 ,  H01L43/08

    摘要： According to one embodiment, a magnetoresistive effect element includes a recording layer including ferromagnetic material with perpendicular magnetic anisotropy to a film surface and a variable orientation of magnetization, a reference layer including ferromagnetic material with perpendicular magnetic anisotropy to a film surface and an invariable orientation of magnetization, a nonmagnetic layer between the recording layer and the reference layer, a first underlayer on a side of the recoding layer opposite to a side on which the nonmagnetic layer is provided, and a second underlayer between the recording layer and the first underlayer. The second underlayer is a Pd film including a concentration of 3×1015 atms/cm2.

    摘要翻译： 根据一个实施例，磁阻效应元件包括记录层，其包括对膜表面具有垂直磁各向异性的铁磁材料和磁化的可变取向，包括具有垂直磁性各向异性的铁磁材料的参考层和膜表面的不变取向 磁化，记录层和参考层之间的非磁性层，与记录层和第一底层之间的第二底层与编码层的与设置非磁性层的一侧相反的一侧的第一底层。 第二底层是包含浓度为3×1015atms / cm 2的Pd膜。

    Magnetoresistive element and magnetic random access memory
    10.
    发明授权
    Magnetoresistive element and magnetic random access memory 有权
    磁阻元件和磁性随机存取存储器

    公开(公告)号：US08750030B2

    公开(公告)日：2014-06-10

    申请号：US13236589

    申请日：2011-09-19

    申请人： Koji Ueda ,  Tadashi Kai ,  Toshihiko Nagase ,  Katsuya Nishiyama ,  Eiji Kitagawa ,  Tadaomi Daibou ,  Makoto Nagamine ,  Hiroaki Yoda

    发明人： Koji Ueda ,  Tadashi Kai ,  Toshihiko Nagase ,  Katsuya Nishiyama ,  Eiji Kitagawa ,  Tadaomi Daibou ,  Makoto Nagamine ,  Hiroaki Yoda

    IPC分类号： G11C11/00

    CPC分类号： H01L43/08 ,  G11C11/16 ,  G11C11/1659 ,  H01F10/123 ,  H01F10/3254 ,  H01F10/3263 ,  H01F10/3286 ,  H01L43/10

    摘要： According to one embodiment, a magnetoresistive element includes an electrode layer, a first magnetic layer, a second magnetic layer and a nonmagnetic layer. The electrode layer includes a metal layer including at least one of Mo, Nb, and W. The first magnetic layer is disposed on the metal layer to be in contact with the metal layer and has a magnetization easy axis in a direction perpendicular to a film plane and is variable in magnetization direction. The second magnetic layer is disposed on the first magnetic layer and has a magnetization easy axis in the direction perpendicular to the film plane and is invariable in magnetization direction. The nonmagnetic layer is provided between the first and second magnetic layers. The magnetization direction of the first magnetic layer is varied by a current that runs through the first magnetic layer, the nonmagnetic layer, and the second magnetic layer.

    摘要翻译： 根据一个实施例，磁阻元件包括电极层，第一磁性层，第二磁性层和非磁性层。 电极层包括包括Mo，Nb和W中的至少一种的金属层。第一磁性层设置在与金属层接触的金属层上，并且在垂直于膜的方向上具有易磁化轴 平面，并且在磁化方向上是可变的。 第二磁性层设置在第一磁性层上，并且在垂直于膜平面的方向上具有易磁化轴，并且在磁化方向上是不变的。 非磁性层设置在第一和第二磁性层之间。 第一磁性层的磁化方向由穿过第一磁性层，非磁性层和第二磁性层的电流而变化。