公开(公告)号：US20110162802A1

公开(公告)日：2011-07-07

申请号：US13049462

申请日：2011-03-16

申请人： Katsuya OKUMURA ,  Shinji HIMORI ,  Kazuya NAGASEKI ,  Hiroki MATSUMARU ,  Shoichiro MATSUYAMA ,  Toshiki TAKAHASHI

发明人： Katsuya OKUMURA ,  Shinji HIMORI ,  Kazuya NAGASEKI ,  Hiroki MATSUMARU ,  Shoichiro MATSUYAMA ,  Toshiki TAKAHASHI

IPC分类号： H01L21/00 ,  C23F1/08 ,  H05H1/24 ,  C23C16/509 ,  C23C16/458 ,  C23C16/455

CPC分类号： H01L21/3065 ,  H01J37/32009 ,  H01J37/32082 ,  H01J37/32541

摘要： A plasma processing apparatus for performing a plasma process on a target substrate includes a process container configured to accommodate the target substrate and to reduce pressure therein. A first electrode is disposed within the process container. A supply system is configured to supply a process gas into the process container. An electric field formation system is configured to form an RF electric field within the process container so as to generate plasma of the process gas. A number of protrusions are discretely disposed on a main surface of the first electrode and protrude toward a space where the plasma is generated.

摘要翻译： 用于在目标衬底上执行等离子体处理的等离子体处理装置包括：配置成容纳目标衬底并减少其中的压力的​​处理容器。 第一电极设置在处理容器内。 供应系统被配置为将处理气体供应到处理容器中。 电场形成系统被配置为在处理容器内形成RF电场，以产生处理气体的等离子体。 多个突起离散地设置在第一电极的主表面上，朝向产生等离子体的空间突出。

公开(公告)号：US20080242086A1

公开(公告)日：2008-10-02

申请号：US12057518

申请日：2008-03-28

申请人： Hiroki MATSUMARU ,  Nobutaka Nakao ,  Kenji Komatsu ,  Syuichi Takahashi

发明人： Hiroki MATSUMARU ,  Nobutaka Nakao ,  Kenji Komatsu ,  Syuichi Takahashi

IPC分类号： H01L21/44

CPC分类号： H01L21/6833 ,  H01J37/32009 ,  H01J37/32165

摘要： A plasma processing method, for performing a plasma process on a target substrate by generating a plasma between an upper electrode and a lower electrode facing each other by means of applying a radio frequency power therebetween, includes applying a DC voltage of a positive or negative polarity to an inner electrode of an electrostatic chuck on the lower electrode to attract and hold the target substrate thereon; and changing the positive or negative polarity of the DC voltage applied to the inner electrode of the electrostatic chuck to an opposite polarity thereto between a time when the application of the radio frequency power from the radio frequency power supply is started to perform the plasma process of the target substrate and a time when the plasma process is completed.

摘要翻译： 一种等离子体处理方法，用于通过在上部电极和下部电极之间通过在其间施加射频电力而产生等离子体，从而在目标基板上进行等离子体处理，包括：施加正极性或负极性的直流电压 连接到下电极上的静电卡盘的内电极，以在其上吸引和保持目标基板; 并且在开始施加来自射频电源的射频功率之间的时刻开始施加到静电卡盘的内部电极的直流电压的正极性或负极性与其相反的极性，以进行等离子体处理 目标衬底和等离子体处理完成的时间。