公开(公告)号：US5936217A

公开(公告)日：1999-08-10

申请号：US972891

申请日：1997-11-18

申请人： Katsuya Takahashi ,  Yukihiro Takahashi ,  Shigeyuki Mori ,  Kazushi Sugawara

发明人： Katsuya Takahashi ,  Yukihiro Takahashi ,  Shigeyuki Mori ,  Kazushi Sugawara

IPC分类号： H01H50/00 ,  H01H1/00 ,  H01H1/64 ,  H01H33/06 ,  H01H9/32 ,  H01H33/60

CPC分类号： H01H1/645

摘要： A switching apparatus wherein the life and the reliability of an electric contact are improved by fundamentally suppressing formation of black powder and activation of the surface of the contact by a chemical reaction. Microcapsules in which organic acid or organic acid precursor from which organic acid is produced as time passes is enclosed are placed into the internal space of an enclosed case so that organic compounds produced on and in the proximity of contact surfaces is oxidized with organic acid which escapes from the microcapsules and vaporized in the enclosed case without forming a film on the surfaces of the contacts to suppress activation of the surfaces of the contacts.

摘要翻译： 通过基本上抑制黑色粉末的形成和通过化学反应活化接触表面，从而提高电接触的寿命和可靠性的开关装置。 将封闭了有机酸的有机酸或有机酸前体的微胶囊放置在封闭壳体的内部空间中，使得在接触表面上及其附近产生的有机化合物被逸出的有机酸氧化 从微胶囊中并在封闭的壳体中蒸发而不在接触表面上形成膜以抑制触点表面的激活。

公开(公告)号：US5342826A

公开(公告)日：1994-08-30

申请号：US950127

申请日：1992-09-24

申请人： Nobuhiko Kubota ,  Tsunemi Sugimoto ,  Kazushi Sugawara ,  Yuh Shiohara

发明人： Nobuhiko Kubota ,  Tsunemi Sugimoto ,  Kazushi Sugawara ,  Yuh Shiohara

IPC分类号： H01L39/24 ,  B32B9/00

CPC分类号： H01L39/2458 ,  Y10S505/701

摘要： A Bi-Sr-Ca-Cu-O system superconducting thin film formed on a substrate comprising [110] single crystals of an ABO.sub.3 type oxide having a perovskite structure, in which a (119) face is selectively grown relative to a substrate surface. The film is formed on the substrate by chemical vapor deposition process. A method of manufacturing a BiSrCaCuO system superconducting film in which an a-axis is oriented preferentially relative to the surface of a substrate comprising MgO (100) single crystals, wherein the chemical composition ratio (Sr+Ca+Cu)/Bi of the BiSrCaCuO system superconducting film is made not less than 3.5. A Bi-Sr-Ca-Cu-O system superconducting thin film formed on a substrate comprising MgO [110] single crystals, in which a (110) face is selectively grown to the substrate surface. The film is formed on the substrate by a chemical vapor deposition process.

摘要翻译： 在包含[110]具有钙钛矿结构的ABO 3型氧化物的单晶的衬底上形成的Bi-Sr-Ca-Cu-O系超导薄膜，其中（119）面相对于衬底表面选择性地生长。 该薄膜通过化学气相沉积工艺在基板上形成。 制造BiSrCaCuO系超导膜的方法，其中a轴相对于包含MgO（100）单晶的衬底的表面优先取向，其中BiSrCaCuO的化学组成比（Sr + Ca + Cu）/ Bi 系统超导薄膜不低于3.5。 在包含MgO [110]单晶的基板上形成的Bi-Sr-Ca-Cu-O系超导薄膜，其中（110）面选择性地生长到基板表面。 通过化学气相沉积工艺在基板上形成膜。

公开(公告)号：US5254530A

公开(公告)日：1993-10-19

申请号：US900370

申请日：1992-06-18

申请人： Tsunemi Sugimoto ,  Kazushi Sugawara ,  Mikio Nakagawa ,  Yuh Shiohara

发明人： Tsunemi Sugimoto ,  Kazushi Sugawara ,  Mikio Nakagawa ,  Yuh Shiohara

IPC分类号： C01G1/00 ,  C01G29/00 ,  C04B35/00 ,  C04B35/45 ,  C30B25/18 ,  C30B29/22 ,  H01B12/00 ,  H01B12/06 ,  H01B13/00 ,  H01L39/22 ,  H01L39/24 ,  C23C16/00

CPC分类号： H01L39/2441 ,  Y10S428/93 ,  Y10S505/73 ,  Y10S505/734

摘要： A Bi-Sr-Ca-Cu-O-type superconductive film is formed on an MgO (100) single crystal substrate by the chemical vapor deposition method at a film formation speed of 780.degree. C. or less and a film formation speed of 1.0 nm/min or more, and exhibits an a-axis or b-axis preferential growth with respect to the substrate surface.