摘要:
The invention relates to an X-Y address type solid-state image pickup device manufactured by a CMOS process, and has an object to provide an X-Y address type solid-state image pickup device in which a chip area is not increased, manufacturing costs are suppressed, and an image averaging processing can be carried out. Pixel regions Pmn are arranged in a matrix form in regions defined by horizontal selection lines RWm and vertical selection lines CLn. Each of the pixel regions Pmn includes a photodiode 10, a source follower amplifier 14 for converting an electric charge of the photodiode 10 into a voltage and amplifying it to output image data, and a horizontal selection transistor 16 for outputting the image data to a predetermined one of the vertical selection lines CLn. An amplifier/noise cancel circuit 6 has a built-in image averaging circuit for carrying out an averaging processing of the image data outputted from at least two of the plurality of the pixel regions Pmn.
摘要:
An image sensor for capturing image, has: a plurality of pixels arranged in a matrix each including a photoelectric conversion element for generating current according to received light intensity and a reset transistor for resetting a node of the photoelectric conversion element to a reset potential; and a sample hold circuit for sample holding a pixel potential according to the potential of the node of the pixel. And the sample hold circuit outputs the differential potential, between a first pixel potential at an end of the integration period after a first reset operation of the pixel and a second pixel potential at an end of a reset noise read period after a second reset operation after the integration period, as a pixel signal. Also in the sample hold circuit, when the second pixel potential during the reset noise read period exceeds a predetermined threshold level, the second pixel potential is set to a predetermined reference potential.
摘要:
The control inputs of reset switch elements 41 to 45 are commonly connected to a row reset line 51. In a line black clamp type, cathodes as reset ends of photodiodes (31) of optical black pixels 21 to 23 are commonly connected to a potential averaging line 30. In a frame black clamp type, potential averaging lines are connected similarly to respective pixel rows on the vertical scanning start side of an optical black pixel region, and the potential averaging lines may be commonly connected to each other to operate just like one pixel row. A first block includes a pixel array and a vertical scanning circuit, while a second block includes sample and hold circuits, a horizontal scanning circuit, an amplifier and an A/D converter 19. In a low power consumption mode, power supply to the second block is ceased in a light integration period of one frame with performing light integration in the pixel array, power supply to the first and second blocks is performed in a read-out period of one frame to read out integrated signals, and power supply to the first and second blocks is ceased in a power-off period of one frame.
摘要:
The control inputs of reset switch elements 41 to 45 are commonly connected to a row reset line 51. In a line black clamp type, cathodes as reset ends of photodiodes (31) of optical black pixels 21 to 23 are commonly connected to a potential averaging line 30. In a frame black clamp type, potential averaging lines are connected similarly to respective pixel rows on the vertical scanning start side of an optical black pixel region, and the potential averaging lines may be commonly connected to each other to operate just like one pixel row. A first block includes a pixel array and a vertical scanning circuit, while a second block includes sample and hold circuits, a horizontal scanning circuit, an amplifier and an A/D converter 19. In a low power consumption mode, power supply to the second block is ceased in a light integration period of one frame with performing light integration in the pixel array, power supply to the first and second blocks is performed in a read-out period of one frame to read out integrated signals, and power supply to the first and second blocks is ceased in a power-off period of one frame.
摘要:
A level shift circuit includes a level shift section for receiving a low potential signal oscillating between a high potential and a ground potential and converting it into a high potential signal oscillating between the high potential and the ground potential, the level shift section being connected to at least a high potential power supply for generating the high potential, a low potential power supply for generating the low potential, and a ground power supply for generating the ground potential, an inverter section for inverting-amplifying the high potential signal from the level shift section, and an N-type MOS transistor for supplying the ground potential to the inverter section, the N-type MOS transistor being connected in series to the inverter section between the high potential power supply and the ground power supply and having its gate electrode connected to the low potential power supply.
摘要:
According to an aspect of an embodiment, an imaging device has a black level reference generator for generating a reference value of a black level by calculating an average value of the accumulated pixel values for which the maximum values and/or minimum values has been replaced by the compensational pixel values, and an output compensator for compensating an output from the light sensitive pixels with the reference value of the black level.
摘要:
An imaging device provided with a read circuit in which a light-shielding region is formed in a part of an image region where a plurality of optical/electrical conversion devices is two-dimensionally arrayed in the row and column directions and which converts a optically detected signal outputted from each of the optical/electrical conversion devices for each of the column into a digital signal, comprises a storage device for storing the outputted digital signal outputted in relation with the optical/electrical conversion device in the light-shielding region and a difference calculation device for calculating a difference between the outputted digital signal in relation with the optical/electrical conversion device in a light-receiving region except the light-shielding region and a value stored in the storage device.
摘要:
A ramp waveform generation circuit which comprises a first reference power supply, and supplies a ramp waveform signal to an analog/digital conversion circuit further comprises a connection circuit for reflecting the amount of fluctuation of the output potential of a second reference power supply which is installed in a noise elimination circuit for eliminating the noise of an analog signal inputted to the analog/digital conversion circuit in the output potential of the first reference power supply.
摘要:
A method for driving a solid state imaging device which prevents the generation of electronic shutter noise even when the integration time for exposure of a pixel region fluctuates. The solid state imaging device performs a rolling shutter operation that sequentially selects a reset row and a read row separated from each other in accordance with a row spacing based on integration time in the pixel array. A dummy row is selected when a reset row or a read row is not selected. The method includes selecting a dummy reset row so that the total of the number of the reset rows and the reset dummy rows that are simultaneously selected is constant regardless of the number of simultaneously selected reset rows.
摘要:
A method for controlling a solid-state imaging apparatus, which includes a plurality of pixels, includes selecting a resetting element of one of the pixels, resetting a detecting unit connected to the pixel, transmitting to a detecting unit, an electric charge accumulated after photoelectric conversion performed by a photoelectric converting element of the pixel, and providing control to set a second end of a transmitting control signal line to an open state.