公开(公告)号：US06642534B2

公开(公告)日：2003-11-04

申请号：US09814831

申请日：2001-03-23

申请人： Kazuhiko Shima ,  Masahito Sato ,  Naoki Uchida ,  Yoichiro Shimura ,  Kenji Sato ,  Hidetoshi Kishimoto

发明人： Kazuhiko Shima ,  Masahito Sato ,  Naoki Uchida ,  Yoichiro Shimura ,  Kenji Sato ,  Hidetoshi Kishimoto

IPC分类号： G21K400

CPC分类号： H01L27/14676

摘要： It is an object of the invention to improve the quality of images obtained by an X-ray detector. A charge transport layer 13 mainly consisted of diantimony trisulfide, an X-ray detection layer 14 mainly consisted of amorphous selenium and a second electrode film 15 are formed in the same order on the surface of a first electrode film 12 provided on a substrate 11. A voltage whose polarity is positive at the first electrode film 12 and negative at the second electrode film 15 is applied, and the surface of the second electrode film 15 is irradiated with an X-ray. Then, carriers generated in the X-ray detection layer 14 are collected by the first and second electrode films. Since a diode whose anode is an X-ray detection layer 14 side and whose cathode is a charge transport layer 13 side is formed at the interface between the X-ray detection layer 14 and charge transport layer 13 of the X-ray detector 31, no hole is injected from the first electrode film 12 into the X-ray detection layer 14, which prevents any reduction of image quality.

摘要翻译： 本发明的目的是提高由X射线检测器获得的图像的质量。电荷传输层13主要由二硫化二锑组成，主要由非晶硒组成的X射线检测层14和第二电极膜15 在设置在基板11上的第一电极膜12的表面上以相同的顺序形成。施加在第一电极膜12处的极性为正的电压，在第二电极膜15处的极性为负的电压，并且第二电极膜的表面 用X射线照射电极膜15。 然后，在X射线检测层14中产生的载流子被第一和第二电极膜收集。 由于在X射线检测层14和X射线检测器31的电荷输送层13之间的界面处形成阳极为X射线检测层14侧，阴极为电荷输送层13侧的二极管， 没有孔从第一电极膜12注入到X射线检测层14中，这防止了图像质量的任何降低。

公开(公告)号：US20120043633A1

公开(公告)日：2012-02-23

申请号：US13265889

申请日：2009-04-30

申请人： Junichi Suzuki ,  Kenji Sato ,  Hidetoshi Kishimoto

发明人： Junichi Suzuki ,  Kenji Sato ,  Hidetoshi Kishimoto

IPC分类号： H01L31/115

CPC分类号： H01L31/115 ,  H01L27/14659 ,  H01L31/02005

摘要： According to a radiation detector of this invention, a common electrode for bias voltage application and a lead wire for bias voltage supply are connected through a conductive plate as a planarly formed plate interposed therebetween. Since the conductive plate is connected instead of connecting the lead wire directly onto the common electrode, it can prevent damage to a radiation sensitive semiconductor and avoid performance degradation. Since the conductive plate is formed planarly, even if a conductive paste with high resistance is used, connection resistance can be lowered to be comparable to the use of silver paste. That is, the range of selection of the conductive paste is broadened. Also, connection can be made without using an insulating seat and performance degradation can be avoided. As a result, performance degradation can be avoided, without using an insulating seat.

摘要翻译： 根据本发明的辐射检测器，用于偏压施加的公共电极和用于偏压供电的引线通过导电板连接，作为插入其间的平面形成的板。 由于连接导电板而不是将引线直接连接到公共电极上，所以可以防止对辐射敏感半导体的损坏，并避免性能下降。 由于导电板是平面形成的，即使使用具有高电阻的导电膏，也可以将连接电阻降低到与使用银膏相当的连接电阻。 也就是说，导电浆料的选择范围变宽。 而且，可以在不使用绝缘座的情况下进行连接，并且可以避免性能下降。 结果，可以避免性能下降，而不使用绝缘座。

公开(公告)号：US20050051731A1

公开(公告)日：2005-03-10

申请号：US10936673

申请日：2004-09-09

申请人： Kenji Sato ,  Junichi Suzuki ,  Nobuya Nagafune ,  Koji Watadani ,  Hidetoshi Kishimoto

发明人： Kenji Sato ,  Junichi Suzuki ,  Nobuya Nagafune ,  Koji Watadani ,  Hidetoshi Kishimoto

IPC分类号： G01T1/24 ,  H01L27/14 ,  H01L27/146 ,  H01L31/00 ,  H01L31/04 ,  H01L31/08 ,  H01L31/09 ,  H01L31/115 ,  H04N5/32 ,  H04N5/335 ,  H04N5/369 ,  H04N5/374

CPC分类号： H01L27/14678 ,  H01L27/14658

摘要： A radiation detector of this invention has an electrically insulating buffer seat disposed on a front surface of a radiation sensitive semiconductor, in a position outside a radiation detection effective area. A common electrode for bias voltage application is formed to cover the buffer seat. A lead wire for bias voltage supply is connected to a lead wire connection area, located on the buffer seat, of the surface of the common electrode. The buffer seat reduces a shock occurring when the lead wire is connected to the common electrode. As a result, the semiconductor and an intermediate layer are protected from damage which would lead to a lowering of performance. The buffer seat is disposed outside the radiation detection effective area. Thus, the buffer seat is provided without impairing the radiation detecting function.

摘要翻译： 本发明的放射线检测器具有设置在辐射敏感半导体的前表面上的辐射检测有效区域外的位置的电绝缘缓冲座。 形成用于偏压施加的公共电极以覆盖缓冲座。 用于偏压供电的引线连接到位于公共电极表面的缓冲座上的引线连接区域。 缓冲座椅减少了引线连接到公共电极时发生的冲击。 结果，半导体和中间层被保护免受损坏，这将导致性能的降低。 缓冲座位置在放射线检测有效区域的外侧。 因此，提供缓冲座，而不损害辐射检测功能。

公开(公告)号：US06407374B1

公开(公告)日：2002-06-18

申请号：US09650846

申请日：2000-08-29

申请人： Toshiyuki Sato ,  Satoshi Tokuda ,  Kenji Sato ,  Junichi Suzuki ,  Shinya Hirasawa ,  Naoyuki Hori ,  Toshinori Yoshimuta ,  Hidetoshi Kishimoto

发明人： Toshiyuki Sato ,  Satoshi Tokuda ,  Kenji Sato ,  Junichi Suzuki ,  Shinya Hirasawa ,  Naoyuki Hori ,  Toshinori Yoshimuta ,  Hidetoshi Kishimoto

IPC分类号： H01L2700

CPC分类号： H01L27/14601 ,  H01L27/1464

摘要： A two-dimensional array type detecting device of the invention is formed of a detecting side substrate, and a readout side substrate laminated together. In the detecting side substrate, a high resistivity responsive semiconductor film is laminated on a substrate through a common electrode therebetween, and semiconductor films for connection are formed for the respective sections corresponding to a two-dimensional array arrangement. Therefore, leak and expansion of carriers produced in the high resistivity responsive semiconductor are prevented in a direct conversion system, wherein light or radiation enters from a side of the glass substrate, in which the common electrode is not formed. Thus, a detecting sensitivity and space resolution can be improved. Namely, a dynamic range is large, and a crosstalk is small.

摘要翻译： 本发明的二维阵列型检测装置由检测侧基板和层叠在一起的读出侧基板构成。 在检测侧基板中，通过它们之间的公共电极在基板上层叠高电阻率响应半导体膜，并且对应于二维阵列布置的各个部分形成用于连接的半导体膜。 因此，在直接转换系统中防止在高电阻率响应半导体中产生的载流子的泄漏和膨胀，其中光或辐射从未形成公共电极的玻璃基板的一侧进入。 因此，可以提高检测灵敏度和空间分辨率。 也就是说，动态范围大，串扰小。

公开(公告)号：US20120199833A1

公开(公告)日：2012-08-09

申请号：US13499966

申请日：2009-10-05

申请人： Kenji Sato ,  Hisao Tsuji ,  Osamu Sasaki ,  Daisuke Murakami ,  Yoichi Yamaguchi ,  Takeshi Yamamoto ,  Hidetoshi Kishimoto

发明人： Kenji Sato ,  Hisao Tsuji ,  Osamu Sasaki ,  Daisuke Murakami ,  Yoichi Yamaguchi ,  Takeshi Yamamoto ,  Hidetoshi Kishimoto

IPC分类号： H01L31/0272

CPC分类号： G01T1/244 ,  H01L27/14618 ,  H01L27/14658 ,  H01L27/14676 ,  H01L2924/0002 ,  H01L2924/00

摘要： A radiation detector of this invention has a barrier layer on the upper surface of a high resistance film along the outer edge of a common electrode, which enables prevention of a chemical reaction between an amorphous semiconductor layer and a curable synthetic resin. The barrier layer is adhesive to the curable synthetic resin film, and this can prevent strength being insufficient, such that temperature changes cause separation in interfaces between the barrier layer and curable synthetic resin film, thereby reducing the effect of inhibiting warpage and cracking. The material for the barrier layer is an insulating material not including a substance that would chemically react with the amorphous semiconductor layer. This can prevent components of the material for the barrier layer from chemically reacting with the semiconductor layer. Consequently, creeping discharge at the outer edge of the common electrode where electric fields concentrate can be prevented.

摘要翻译： 本发明的放射线检测器沿着公共电极的外缘在高电阻膜的上表面具有阻挡层，能够防止非晶半导体层与可固化合成树脂之间的化学反应。 阻挡层与可固化合成树脂膜粘合，能够防止强度不足，使得温度变化导致阻隔层和可固化合成树脂膜之间的界面分离，从而降低了翘曲和开裂的抑制效果。 用于阻挡层的材料是不包括将与非晶半导体层发生化学反应的物质的绝缘材料。 这可以防止用于阻挡层的材料的组分与半导体层发生化学反应。 因此，可以防止电场集中的公共电极的外缘的沿面放电。

公开(公告)号：US07105829B2

公开(公告)日：2006-09-12

申请号：US10936673

申请日：2004-09-09

申请人： Kenji Sato ,  Junichi Suzuki ,  Nobuya Nagafune ,  Koji Watadani ,  Hidetoshi Kishimoto

发明人： Kenji Sato ,  Junichi Suzuki ,  Nobuya Nagafune ,  Koji Watadani ,  Hidetoshi Kishimoto

IPC分类号： G01T1/24 ,  H01L27/146

CPC分类号： H01L27/14678 ,  H01L27/14658

摘要： A radiation detector of this invention has an electrically insulating buffer seat disposed on a front surface of a radiation sensitive semiconductor, in a position outside a radiation detection effective area. A common electrode for bias voltage application is formed to cover the buffer seat. A lead wire for bias voltage supply is connected to a lead wire connection area, located on the buffer seat, of the surface of the common electrode. The buffer seat reduces a shock occurring when the lead wire is connected to the common electrode. As a result, the semiconductor and an intermediate layer are protected from damage which would lead to a lowering of performance. The buffer seat is disposed outside the radiation detection effective area. Thus, the buffer seat is provided without impairing the radiation detecting function.

摘要翻译： 本发明的放射线检测器具有设置在辐射敏感半导体的前表面上的辐射检测有效区域外的位置的电绝缘缓冲座。 形成用于偏置电压的公共电极以覆盖缓冲器座。 用于偏压供电的引线连接到位于公共电极表面的缓冲座上的引线连接区域。 缓冲座椅减少了引线连接到公共电极时发生的冲击。 结果，半导体和中间层被保护免受损坏，这将导致性能的降低。 缓冲座位置在放射线检测有效区域的外侧。 因此，提供缓冲座，而不损害辐射检测功能。

公开(公告)号：US5515411A

公开(公告)日：1996-05-07

申请号：US215950

申请日：1994-03-22

申请人： Hiromichi Tonami ,  Takahisa Nishikawa ,  Takayuki Takemoto ,  Yutaro Kimura ,  Keiichi Hiragaki ,  Hidetoshi Kishimoto ,  Tatsuya Shimizu ,  Shiro Oikawa ,  Tutomu Katou ,  Shirou Suzuki ,  Toshio Yamagishi ,  Kenkichi Tanioka

发明人： Hiromichi Tonami ,  Takahisa Nishikawa ,  Takayuki Takemoto ,  Yutaro Kimura ,  Keiichi Hiragaki ,  Hidetoshi Kishimoto ,  Tatsuya Shimizu ,  Shiro Oikawa ,  Tutomu Katou ,  Shirou Suzuki ,  Toshio Yamagishi ,  Kenkichi Tanioka

IPC分类号： G21K4/00 ,  H01J31/49 ,  H01J40/14

CPC分类号： H01J31/49 ,  G21K4/00 ,  G21K2004/04 ,  G21K2004/06

摘要： An X-ray image pickup tube converts a transmitted X-ray image into electric signals. The pickup tube includes a target structure having a fluorescent element, and a translucent conductive film for receiving a high voltage, with a photoconductive film laminated thereupon. The fluorescent element receives transmitted X rays in a two-dimensional distribution, and converts them into visible rays in a two-dimensional distribution. The translucnet conductive film is optically coupled to a surface of the fluorescent element opposite from an X-ray incident surface thereof. The photoconductive film includes an amorphors semiconductor layer which converts the visible rays transmitted in a two-dimensional distribution through the translucent conductive film, into electric charges in a two-dimensional distribution, and which multiplies the electric charges in the two-dimensional distribution based on electric fields formed by the high voltage applied to the translucent conductive film. The pickup tube also has a signal reading device in the form of an electron gun or switching elements for scanning a surface of the photoconductive film, as electric signals, a two-dimensional electric potential distribution occurring on the photoconductive film.

摘要翻译： X射线摄像管将透射的X射线图像转换为电信号。 拾取管包括具有荧光元件的目标结构和用于接收高电压的半透明导电膜，其上层叠有光电导膜。 荧光元件以二维分布接收透射的X射线，并将其转换成二维分布中的可见光。 透明导电膜光学耦合到与其X射线入射表面相对的荧光元件的表面。 光电导膜包括将通过半透明导电膜以二维分布透射的可见光转换为二维分布的电荷的非晶半导体层，并且将二维分布中的电荷乘以 由施加到半透明导电膜的高电压形成的电场。 拾取管还具有电子枪形式的信号读取装置或用于扫描光电导膜的表面作为电信号的光电导膜上出现的二维电位分布的开关元件。