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公开(公告)号：US20150072439A1
公开(公告)日：2015-03-12
申请号：US14200510
申请日：2014-03-07
IPC分类号： H01L43/12
CPC分类号： H01L43/12 , H01L27/228
摘要： According to one embodiment, a method of manufacturing a magnetoresistive element, the method includes forming a first non-magnetic layer on a first magnetic layer, forming a second magnetic layer on the first non-magnetic layer, forming a second non-magnetic layer on the second magnetic layer, forming a third magnetic layer on the second non-magnetic layer, patterning the third magnetic layer by a RIE using an etching gas including a noble gas and a nitrogen gas until a surface of the second non-magnetic layer is exposed, and patterning the second non-magnetic layer and the second magnetic layer after patterning of the third magnetic layer.
摘要翻译： 根据一个实施例，一种制造磁阻元件的方法，该方法包括在第一磁性层上形成第一非磁性层，在第一非磁性层上形成第二磁性层，在第一非磁性层上形成第二非磁性层 第二磁性层，在第二非磁性层上形成第三磁性层，使用包括惰性气体和氮气的蚀刻气体，通过RIE对第三磁性层进行构图，直到第二非磁性层的表面露出 并且在第三磁性层的图案化之后图案化第二非磁性层和第二磁性层。
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公开(公告)号：US20150072440A1
公开(公告)日：2015-03-12
申请号：US14201108
申请日：2014-03-07
IPC分类号： H01L43/12 , H01L21/3065
CPC分类号： H01L43/12 , H01L27/228 , H01L43/02 , H01L43/08
摘要： According to one embodiment, a method of manufacturing a magnetoresistive element, the method includes forming a non-magnetic layer on a first magnetic layer, forming a second magnetic layer on the non-magnetic layer, and patterning the second magnetic layer by a RIE using an etching gas including a noble gas and a hydrocarbon gas.
摘要翻译： 根据一个实施例，一种制造磁阻元件的方法，该方法包括在第一磁性层上形成非磁性层，在非磁性层上形成第二磁性层，并通过RIE使第二磁性层图案化 包括惰性气体和烃气体的蚀刻气体。
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公开(公告)号：US20090310078A1
公开(公告)日：2009-12-17
申请号：US12542812
申请日：2009-08-18
IPC分类号： G02F1/1345
CPC分类号： G02F1/134363 , G02F1/1345
摘要： Disclosed is a liquid crystal display device that includes a TFT substrate. A plurality of gate lines and a plurality of common lines extend in a first direction on the TFT substrate. Drain lines extend in a second direction substantially perpendicularly to these lines. Bus lines are located outside a display area and are extending parallel to the drain lines. Common line terminals are provided on either side of each block that is constituted by a predetermined number of gate terminals. The common line terminals and the lead lines therefor are formed on the same layer as the drain lines and are connected to the bus lines on the same layer without any contacts being used. Resistance along the routes taken by common lines can be reduced.
摘要翻译： 公开了一种包括TFT基板的液晶显示装置。 多个栅极线和多个公共线在TFT基板上沿第一方向延伸。 排水线在大致垂直于这些线的第二方向上延伸。 总线位于显示区域外部并且平行于排出线延伸。 公共端子设置在由预定数量的栅极端子构成的每个块的任一侧上。 公共线端子及其引线形成在与漏极线相同的层上，并且在相同层上连接到总线，而不使用任何接触。 可以减少沿着公共线路路线的电阻。
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公开(公告)号：US20120214308A1
公开(公告)日：2012-08-23
申请号：US13230118
申请日：2011-09-12
申请人： Satoshi INADA , Mitsuhiro OMURA , Hisataka HAYASHI
发明人： Satoshi INADA , Mitsuhiro OMURA , Hisataka HAYASHI
IPC分类号： H01L21/308
CPC分类号： H01L21/32139 , B82Y10/00 , B82Y40/00 , G03F7/0002 , G03F7/038 , G03F7/039 , G03F7/095 , H01L21/0273
摘要： An aspect of the present embodiment, there is provided a method of fabricating a semiconductor device including providing a film to be processed above a semiconductor substrate, providing a negative-type resist and a photo-curable resist in order, pressing a main surface of a template onto the photo-curable resist, the main surface of the template having a concavo-convex pattern with a light shield portion provided on at least a part of a convex portion, irradiating the template with light from a back surface of the template, developing the negative-type resist and the photo-curable resist so as to print the concavo-convex pattern of the template on the negative-type resist and the photo-curable resist, and etching the film to be processed by using the concavo-convex pattern printed on the negative-type resist and the photo-curable resist as a mask.
摘要翻译： 本实施例的一个方面提供一种制造半导体器件的方法，该半导体器件包括在半导体衬底上提供待加工的膜，依次提供负型抗蚀剂和可光固化抗蚀剂， 模板到可光固化抗蚀剂上，模板的主表面具有凹凸图案，具有设置在凸部的至少一部分上的遮光部分，用来自模板背面的光照射模板，显影 负型抗蚀剂和光固化型抗蚀剂，以便在负型抗蚀剂和可光固化抗蚀剂上印刷模板的凹凸图案，并通过使用凹凸图案来蚀刻待处理的薄膜 印刷在负型抗蚀剂和可光固化抗蚀剂上作为掩模。
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