-
公开(公告)号：US07541117B2
公开(公告)日：2009-06-02
申请号：US11735778
申请日：2007-04-16
CPC分类号： H01L21/32139 , G03F1/30 , G03F1/70 , H01L21/0274
摘要： Disclosed herein is a mask pattern generating method for generating a mask pattern to be formed in a Levenson phase shift mask used in a light exposure process for exposing a photoresist film formed on a fabricated film to be patterned into a conductive layer to light when the conductive layer is patterned by photolithography, the conductive layer including a gate electrode formed in an active region extending in a first direction in a wafer in such a manner as to extend in a second direction orthogonal to the first direction, the mask pattern generating method including: a phase shifter arranging step; a shifter pattern image obtaining step; a trim pattern image obtaining step; and a phase shifter elongating step.
摘要翻译： 本文公开了一种掩模图案生成方法，用于产生将在用于将形成在待图案化的制造膜上的形成在其上的光致抗蚀剂膜暴露于导电层中的莱文森相移掩模中形成的掩模图案，以在导电 层通过光刻法图案化，所述导电层包括形成在沿晶片的第一方向延伸的有源区域中的栅电极，其方式为在与第一方向正交的第二方向上延伸，掩模图案生成方法包括： 移相器布置步骤; 移位图案图像获取步骤; 修剪图案图像获取步骤; 和移相器伸长步骤。
-
公开(公告)号：US20070283313A1
公开(公告)日：2007-12-06
申请号：US11735778
申请日：2007-04-16
IPC分类号： G06F17/50
CPC分类号： H01L21/32139 , G03F1/30 , G03F1/70 , H01L21/0274
摘要： Disclosed herein is a mask pattern generating method for generating a mask pattern to be formed in a Levenson phase shift mask used in a light exposure process for exposing a photoresist film formed on a fabricated film to be patterned into a conductive layer to light when the conductive layer is patterned by photolithography, the conductive layer including a gate electrode formed in an active region extending in a first direction in a wafer in such a manner as to extend in a second direction orthogonal to the first direction, the mask pattern generating method including: a phase shifter arranging step; a shifter pattern image obtaining step; a trim pattern image obtaining step; and a phase shifter elongating step.
摘要翻译： 本文公开了一种掩模图案生成方法，用于产生将在用于将形成在待图案化的制造膜上的形成在其上的光致抗蚀剂膜暴露于导电层中的莱文森相移掩模中形成的掩模图案，以在导电 层通过光刻法图案化，所述导电层包括形成在沿晶片的第一方向延伸的有源区域中的栅电极，其方式为在与第一方向正交的第二方向上延伸，掩模图案生成方法包括： 移相器布置步骤; 移位图案图像获取步骤; 修剪图案图像获取步骤; 和移相器伸长步骤。
-
3.发明授权Method for correcting mask pattern, photomask, method for fabricating photomask, electron beam writing method for fabricating photomask, exposure method, semiconductor device, and method for fabricating semiconductor device 有权用于校正掩模图案，光掩模，用于制造光掩模的方法，用于制造光掩模的电子束写入方法，曝光方法，半导体器件和用于制造半导体器件的方法公开(公告)号：US07799510B2
公开(公告)日：2010-09-21
申请号：US12603055
申请日：2009-10-21
IPC分类号： G03C5/00
摘要： A method for correcting a mask pattern to be formed on a photomask used in a lithographic step of a semiconductor device fabrication process. The method includes the steps of extracting an isolated pattern having an optically isolated portion from the mask pattern and providing, in an adjacent pattern extending parallel to the isolated portion of the isolated pattern and having a terminal end, an extended portion extending from the terminal end next to the isolated portion of the isolated pattern along a direction in which the isolated portion of the isolated pattern extends.
摘要翻译： 一种用于校正要在半导体器件制造工艺的光刻步骤中使用的光掩模上形成的掩模图案的方法。 该方法包括以下步骤：从掩模图案提取具有光学隔离部分的隔离图案，并以与隔离图案的隔离部分平行延伸并具有终端的相邻图案提供从终端延伸的延伸部分 在隔离图案的隔离部分的隔离部分沿隔离图案的隔离部分延伸的方向旁边。
-
4.发明申请Method for correcting mask pattern, photomask, method for fabricating photomask, electron beam writing method for fabricating photomask, exposure method, semiconductor device, and method for fabricating semiconductor device 有权用于校正掩模图案，光掩模，用于制造光掩模的方法，用于制造光掩模的电子束写入方法，曝光方法，半导体器件和用于制造半导体器件的方法公开(公告)号：US20060134532A1
公开(公告)日：2006-06-22
申请号：US11287826
申请日：2005-11-28
摘要： A method is provided for correcting a mask pattern to be formed on a photomask used in a lithographic step of a semiconductor device fabrication process. The method includes the steps of extracting an isolated pattern having an optically isolated portion from the mask pattern and providing, in an adjacent pattern extending parallel to the isolated portion of the isolated pattern and having a terminal end, an extended portion extending from the terminal end next to the isolated portion of the isolated pattern along a direction in which the isolated portion of the isolated pattern extends.
摘要翻译： 提供一种用于校正要在半导体器件制造工艺的光刻步骤中使用的光掩模上形成的掩模图案的方法。 该方法包括以下步骤：从掩模图案提取具有光学隔离部分的隔离图案，并以与隔离图案的隔离部分平行延伸并具有终端的相邻图案提供从终端延伸的延伸部分 在隔离图案的隔离部分的隔离部分沿隔离图案的隔离部分延伸的方向旁边。
-
5.发明申请METHOD FOR CORRECTING MASK PATTERN, PHOTOMASK, METHOD FOR FABRICATING PHOTOMASK, ELECTRON BEAM WRITING METHOD FOR FABRICATING PHOTOMASK, EXPOSURE METHOD, SEMICONDUCTOR DEVICE, AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE 有权用于校正掩模图案的方法，光电子学，制造光电子能力的方法，用于制造光电子束的电子束写入方法，曝光方法，半导体器件和用于制造半导体器件的方法公开(公告)号：US20100038798A1
公开(公告)日：2010-02-18
申请号：US12603055
申请日：2009-10-21
IPC分类号： H01L23/48 , H01L21/302
摘要： A method for correcting a mask pattern to be formed on a photomask used in a lithographic step of a semiconductor device fabrication process. The method includes the steps of extracting an isolated pattern having an optically isolated portion from the mask pattern and providing, in an adjacent pattern extending parallel to the isolated portion of the isolated pattern and having a terminal end, an extended portion extending from the terminal end next to the isolated portion of the isolated pattern along a direction in which the isolated portion of the isolated pattern extends.
摘要翻译： 一种用于校正要在半导体器件制造工艺的光刻步骤中使用的光掩模上形成的掩模图案的方法。 该方法包括以下步骤：从掩模图案提取具有光学隔离部分的隔离图案，并以与隔离图案的隔离部分平行延伸并具有终端的相邻图案提供从终端延伸的延伸部分 在隔离图案的隔离部分的隔离部分沿隔离图案的隔离部分延伸的方向旁边。
-
6.发明授权Method for correcting mask pattern, photomask, method for fabricating photomask, electron beam writing method for fabricating photomask, exposure method, semiconductor device, and method for fabricating semiconductor device 有权用于校正掩模图案，光掩模，用于制造光掩模的方法，用于制造光掩模的电子束写入方法，曝光方法，半导体器件和用于制造半导体器件的方法公开(公告)号：US07767364B2
公开(公告)日：2010-08-03
申请号：US11287826
申请日：2005-11-28
IPC分类号： G03F1/00
摘要： A method is provided for correcting a mask pattern to be formed on a photomask used in a lithographic step of a semiconductor device fabrication process. The method includes the steps of extracting an isolated pattern having an optically isolated portion from the mask pattern and providing, in an adjacent pattern extending parallel to the isolated portion of the isolated pattern and having a terminal end, an extended portion extending from the terminal end next to the isolated portion of the isolated pattern along a direction in which the isolated portion of the isolated pattern extends.
摘要翻译： 提供一种用于校正要在半导体器件制造工艺的光刻步骤中使用的光掩模上形成的掩模图案的方法。 该方法包括以下步骤：从掩模图案提取具有光学隔离部分的隔离图案，并以与隔离图案的隔离部分平行延伸并具有终端的相邻图案提供从终端延伸的延伸部分 在隔离图案的隔离部分的隔离部分沿隔离图案的隔离部分延伸的方向旁边。
-
公开(公告)号：US20130274495A1
公开(公告)日：2013-10-17
申请号：US13995680
申请日：2011-12-19
申请人： Kenji Murai , Kazuhisa Ogawa , Shin Yoneda
发明人： Kenji Murai , Kazuhisa Ogawa , Shin Yoneda
IPC分类号： C11B7/00
CPC分类号： C11B7/0083 , A23D9/007 , C11B3/008 , C11B7/0075
摘要： The purpose of the present invention is to provide a method, whereby, in the dry fractionation of an oil or fat, a decrease in solid-liquid ,separation efficiency, said decrease being caused by the engulfment of a filtrate fraction into a crystal fraction after crystallization and press filtration, can be prevented and thus the crystal slurry can be efficiently separated after the crystallization. A method for the dry fractionation of an oil or fat, said method comprising, before or after crystallization, adding a definite amount of a filtration aid followed by mixing and then press-filtering the thus obtained crystal slurry. Thus, the crystal slurry can be easily separated into a crystal fraction with little engulfment of a liquid fraction and the liquid fraction.
摘要翻译： 本发明的目的是提供一种方法，其中在油或脂肪的干馏分中，固液分离效率降低，所述降低是由滤液组分吞入结晶部分后引起的， 可以防止结晶和压制过滤，从而可以在结晶后有效地分离晶体浆料。 一种油或脂肪的干馏分离方法，所述方法包括在结晶之前或之后，加入一定量的助滤剂，然后混合，然后对由此得到的晶体浆料进行压滤。 因此，可以容易地将晶体浆料分离成几乎没有液体馏分和液体馏分的流失的结晶部分。
-
公开(公告)号：US08772518B2
公开(公告)日：2014-07-08
申请号：US13995680
申请日：2011-12-19
申请人： Kenji Murai , Kazuhisa Ogawa , Shin Yoneda
发明人： Kenji Murai , Kazuhisa Ogawa , Shin Yoneda
CPC分类号： C11B7/0083 , A23D9/007 , C11B3/008 , C11B7/0075
摘要： The purpose of the present invention is to provide a method, whereby, in the dry fractionation of an oil or fat, a decrease in solid-liquid separation efficiency, said decrease being caused by the engulfment of a filtrate fraction into a crystal fraction after crystallization and press filtration, can be prevented and thus the crystal slurry can be efficiently separated after the crystallization. A method for the dry fractionation of an oil or fat, said method comprising, before or after crystallization, adding a definite amount of a filtration aid followed by mixing and then press-filtering the thus obtained crystal slurry. Thus, the crystal slurry can be easily separated into a crystal fraction with little engulfment of a liquid fraction and the liquid fraction.
摘要翻译： 本发明的目的是提供一种方法，其中在油或脂肪的干分级中，固液分离效率的降低，所述减少是由于滤液部分在结晶之后被吸收到结晶部分中而引起的 并且可以防止压滤，从而可以在结晶后有效地分离晶体浆料。 一种油或脂肪的干馏分离方法，所述方法包括在结晶之前或之后，加入一定量的助滤剂，然后混合，然后对由此得到的晶体浆料进行压滤。 因此，可以容易地将晶体浆料分离成几乎没有液体馏分和液体馏分的流失的结晶部分。
-
公开(公告)号：US20130009314A1
公开(公告)日：2013-01-10
申请号：US13536639
申请日：2012-06-28
申请人： Kazuhisa Ogawa
发明人： Kazuhisa Ogawa
IPC分类号： G01R31/3187 , G06F17/50 , H01L23/498
CPC分类号： H01L22/34 , G06F17/5068 , H01L2924/0002 , H01L2924/00
摘要： A test circuit includes a substrate, a wiring section having a plurality of pieces of wiring, and a device-under-test section formed on the substrate, and having a device-under-test main body and a plurality of connecting electrodes for establishing connection between the main body and the plurality of pieces of wiring, an extending direction of a straight line connecting a position of a center of rotation in a plane of pattern formation of the main body and each electrodes being inclined at a predetermined angle to an extending direction of the pieces of wiring, and the connecting electrodes being arranged at positions such that connection relation between the electrodes and the plurality of pieces of wiring is maintained even when the main body and the electrodes are rotated about the position of the center of rotation by 90 degrees relative to the wiring section in the plane of the pattern formation.
摘要翻译： 测试电路包括基板，具有多条布线的布线部分和形成在基板上的被测器件部分，并且具有被测器件主体和多个用于建立连接的连接电极 在主体和多条布线之间，连接主体的图案形成平面中的旋转中心的位置的直线的延伸方向和每个电极相对于延伸方向以预定角度倾斜 并且连接电极被布置在即使当主体和电极围绕旋转中心的位置旋转90°时也保持电极和多条布线之间的连接关系的位置 相对于图案形成的平面中的布线部分的度数。
-
公开(公告)号：US08181635B2
公开(公告)日：2012-05-22
申请号：US12470594
申请日：2009-05-22
申请人： Kazuhisa Ogawa , Hiroaki Hasebe
发明人： Kazuhisa Ogawa , Hiroaki Hasebe
CPC分类号： F01M13/04 , F01M13/022 , F01M2013/0461 , F01M2013/0488
摘要： In a breather device for engine, in which an inlet of a breather chamber communicates with a crank chamber through a reed valve, the reed valve being formed of: a fixed stopper plate arranged so as to be opposed to a valve seat formed on an end face of the inlet facing the breather chamber; and an elastic valve plate fixed at one end thereof to the stopper plate and capable of bending elastically to change its position from a closed position in which the elastic valve plate closes the inlet by seating on the valve seat to an opening limit position in which the elastic valve plate opens the inlet and abuts against the stopper plate, the stopper plate is provided at a center part thereof with an oil discharge hole through which oil present between the elastic valve plate and the stopper plate is pushed out when the elastic valve plate is pushed toward the opening limit position in which the elastic valve plate abuts against the stopper plate by pressure in the crank chamber. Accordingly, it is possible to prevent the elastic valve plate from sticking to the stopper plate even if oil mist adheres to the elastic valve plate or the stopper plate of the reed valve.
摘要翻译： 在用于发动机的通气装置中，其中通气室的入口通过簧片阀与曲轴室连通，所述簧片阀由以下部件形成：固定止动板，其布置成与形成在端部上的阀座相对 面向通气室的入口面; 以及弹性阀板，其一端固定在止动板上，并且能够弹性地弯曲以使其位置从关闭位置改变，在关闭位置，弹性阀板通过将阀座安置在开启极限位置而关闭入口，其中， 弹性阀板打开入口并抵靠止动板，止动板在其中心部分设置有排油孔，当弹性阀板是弹性阀板时，弹性阀板和止动板之间存在的油被推出 推动到弹性阀板通过曲柄室中的压力与止动板抵接的开启极限位置。 因此，即使油雾粘附到簧片阀的弹性阀板或止动板上，也可以防止弹性阀板粘到止动板上。
-
-
-
-
-
-
-
-
-
搜索结果
34 条记录 (耗时 0.025 秒)
