公开(公告)号：US08017862B2

公开(公告)日：2011-09-13

申请号：US11583872

申请日：2006-10-20

申请人： Michio Kida ,  Wugen Pan ,  Kyojiro Kaneko ,  Kazuo Nakajima ,  Noritaka Usami ,  Kozo Fujiwara

发明人： Michio Kida ,  Wugen Pan ,  Kyojiro Kaneko ,  Kazuo Nakajima ,  Noritaka Usami ,  Kozo Fujiwara

IPC分类号： H01L25/00 ,  H01L31/00 ,  H02N6/00

CPC分类号： H01L31/0312 ,  H01L31/077 ,  Y02E10/50

摘要： In growing a single-crystal silicon by the present invention in a Czochralski method, after a surface of a silicon melt is brought into contact with a seed crystal in a crucible, the silicon melt being added with germanium, the single-crystal silicon is pulled while rotated, and the solar-cell single-crystal silicon substrate is sliced from the single-crystal silicon containing germanium, whereby a germanium content of solar-cell single-crystal silicon substrate is set in the range of not less than 0.03 mole % to less than 1.0 mole % when resistivity ranges from 1.4 to 1.9 Ωcm. Therefore, conversion efficiency is enhanced when compared with conventional single-crystal silicon substrates. Accordingly, solar cell power generation costs decreases, so that the single-crystal silicon of the present invention can widely be utilized as the substrate for the solar cell in which the high conversion efficiency is increasingly demanded.

摘要翻译： 在通过本发明的单晶硅以切克劳斯基法生长单晶硅之后，在将熔融硅表面与坩埚中的晶种接触之后，将硅熔体加入锗，将单晶硅拉出 同时旋转，并且从含单晶硅的锗切片太阳能电池单晶硅基板，由此将太阳能电池单晶硅基板的锗含量设定在不小于0.03摩尔％的范围内，相对于 当电阻率范围为1.4至1.9（OHgr·cm）时小于1.0摩尔％。 因此，与传统的单晶硅衬底相比，转换效率提高。 因此，太阳能电池发电成本降低，使得本发明的单晶硅可以广泛地用作其中越来越需要高转换效率的太阳能电池的基板。

公开(公告)号：US07750232B2

公开(公告)日：2010-07-06

申请号：US11176389

申请日：2005-07-08

申请人： Kazuo Nakajima ,  Wugen Pan ,  Kozo Fujiwara ,  Noritaka Usami

发明人： Kazuo Nakajima ,  Wugen Pan ,  Kozo Fujiwara ,  Noritaka Usami

IPC分类号： H01L25/00

CPC分类号： H01L31/0312 ,  H01L31/03687 ,  H01L31/1812 ,  Y02E10/548

摘要： A multi-crystalline silicon germanium bulk crystal with microscopic compositional distribution is adapted for use in solar cells to substantially increase conversion efficiency. By controlling the average Ge concentration between 0.1 and 8.0 mole percent, significant improvements are attained with respect to short circuit current density and conversion efficiency.

摘要翻译： 具有微观组成​​分布的多晶硅锗体晶适用于太阳能电池，以显着提高转换效率。 通过控制平均Ge浓度在0.1和8.0摩尔％之间，在短路电流密度和转换效率方面可以获得显着的改进。

公开(公告)号：US20070089781A1

公开(公告)日：2007-04-26

申请号：US11583872

申请日：2006-10-20

申请人： Michio Kida ,  Wugen Pan ,  Kyojiro Kaneko ,  Kazuo Nakajima ,  Noritaka Usami ,  Kozo Fujiwara

发明人： Michio Kida ,  Wugen Pan ,  Kyojiro Kaneko ,  Kazuo Nakajima ,  Noritaka Usami ,  Kozo Fujiwara

IPC分类号： H01L31/00

CPC分类号： H01L31/0312 ,  H01L31/077 ,  Y02E10/50

摘要： In growing a single-crystal silicon by the present invention in a Czochralski method, after a surface of a silicon melt is brought into contact with a seed crystal in a crucible, the silicon melt being added with germanium, the single-crystal silicon is pulled while rotated, and the solar-cell single-crystal silicon substrate is sliced from the single-crystal silicon containing germanium, whereby a germanium content of solar-cell single-crystal silicon substrate is set in the range of not less than 0.1 mole % and less than 1.0 mole %. Desirably the germanium content is set in the range of not less than 0.1 mole % to not more than 0.6 mole %, and the germanium content is set in the range of not less than 0.03 mole % to less than 1.0 mole % when resistivity ranges from 1.4 to 1.9 Ωcm. Therefore, conversion efficiency can largely be enhanced compared with the case where the conventional single-crystal silicon substrate is used. Accordingly, solar cell power generation costs decreases, so that the single-crystal silicon of the present invention can widely be utilized as the substrate for the solar cell in which the high conversion efficiency is increasingly demanded.

摘要翻译： 在通过本发明的单晶硅以切克劳斯基法生长单晶硅之后，在将熔融硅表面与坩埚中的晶种接触之后，将硅熔体加入锗，将单晶硅拉出 同时旋转，并且从含单晶硅的锗切片太阳能电池单晶硅衬底，由此将太阳能电池单晶硅衬底的锗含量设定在不小于0.1摩尔％的范围内，以及 小于1.0摩尔％。 理想地，锗含量设定在不小于0.1摩尔％至不大于0.6摩尔％的范围内，并且当电阻率范围为从不低于0.03摩尔％至小于1.0摩尔％时，锗含量设定在 1.4至1.9欧姆 因此，与使用传统的单晶硅衬底的情况相比，转换效率可以大大提高。 因此，太阳能电池发电成本降低，使得本发明的单晶硅可以广泛地用作其中越来越需要高转换效率的太阳能电池的基板。

公开(公告)号：US20070006915A1

公开(公告)日：2007-01-11

申请号：US11176389

申请日：2005-07-08

申请人： Kazuo Nakajima ,  Wugen Pan ,  Kozo Fujiwara ,  Noritaka Usami

发明人： Kazuo Nakajima ,  Wugen Pan ,  Kozo Fujiwara ,  Noritaka Usami

IPC分类号： H01L31/00

CPC分类号： H01L31/0312 ,  H01L31/03687 ,  H01L31/1812 ,  Y02E10/548

摘要： A multi-crystalline silicon germanium bulk crystal with microscopic compositional distribution is adapted for use in solar cells to substantially increase conversion efficiency. By controlling the average Ge concentration between 0.1 and 8.0 mole percent, significant improvements are attained with respect to short circuit current density and conversion efficiency.

摘要翻译： 具有微观组成​​分布的多晶硅锗体晶适用于太阳能电池，以显着提高转换效率。 通过控制平均Ge浓度在0.1和8.0摩尔％之间，在短路电流密度和转换效率方面可以获得显着的改进。

公开(公告)号：US07279632B2

公开(公告)日：2007-10-09

申请号：US10784932

申请日：2004-02-25

申请人： Kazuo Nakajima ,  Noritaka Usami ,  Kozo Fujikawa ,  Wugen Pan

发明人： Kazuo Nakajima ,  Noritaka Usami ,  Kozo Fujikawa ,  Wugen Pan

IPC分类号： H01L31/0264

CPC分类号： H01L31/03682 ,  C30B11/00 ,  C30B29/52 ,  H01L21/02532 ,  H01L21/02546 ,  H01L21/02625 ,  H01L31/1812 ,  Y02E10/546

摘要： Provided is a multi-element polycrystal formed by cooling a melt containing multiple components while controlling a cooling rate. The multi-element polycrystal is a mixed crystal essentially formed of elements Si and Ge having different absorption wavelength ranges and having a composition represented by Si1-XGeX, in which Ge absorbs light over a longer range of wavelength from a shorter to longer wavelength range than Si, each of the crystal grains of the mixed crystal has a matrix having a plurality of discrete regions dispersed therein, the average matrix composition is represented by Si1-x1Gex1 and the average composition of the discrete regions is represented by Si1-x2Gex2 where X1

摘要翻译： 提供了通过在控制冷却速率的同时冷却包含多个组分的熔体而形成的多元多晶体。 多元素多晶体是基本上由具有不同吸收波长范围的元素Si和Ge形成并具有由Si 1-X N Ge X X表示的组成的混合晶体，其中 Ge在比Si更短的波长范围内吸收较长的波长范围的光，混合晶体的每个晶粒具有分散有多个离散区域的基体，平均基质组成由Si _{1-x1 x1 ，并且离散区域的平均组成由Si 1-x 2 x Ge x 2 x表示，其中X1}

公开(公告)号：US20050183766A1

公开(公告)日：2005-08-25

申请号：US10784932

申请日：2004-02-25

申请人： Kazuo Nakajima ,  Noritaka Usami ,  Kozo Fujikawa ,  Wugen Pan

发明人： Kazuo Nakajima ,  Noritaka Usami ,  Kozo Fujikawa ,  Wugen Pan

IPC分类号： C30B11/00 ,  C30B29/52 ,  H01L21/208 ,  H01L31/00 ,  H01L31/0368 ,  H01L31/18

CPC分类号： H01L31/03682 ,  C30B11/00 ,  C30B29/52 ,  H01L21/02532 ,  H01L21/02546 ,  H01L21/02625 ,  H01L31/1812 ,  Y02E10/546

摘要： Provided is a multi-element polycrystal formed by cooling a melt containing multiple components while controlling a cooling rate. The multi-element polycrystal is a mixed crystal essentially formed of elements Si and Ge having different absorption wavelength ranges and having a composition represented by Si1-XGeX, in which Ge absorbs light over a longer range of wavelength from a shorter to longer wavelength range than Si, each of the crystal grains of the mixed crystal has a matrix having a plurality of discrete regions dispersed therein, the average matrix composition is represented by Si1-x1Gex1 and the average composition of the discrete regions is represented by Si1-x2Gex2 where X1

摘要翻译： 提供了通过在控制冷却速率的同时冷却包含多个组分的熔体而形成的多元多晶体。 多元素多晶体是基本上由具有不同吸收波长范围的元素Si和Ge形成并具有由Si 1-X N Ge X X表示的组成的混合晶体，其中 Ge在比Si更短的波长范围内吸收较长的波长范围的光，混合晶体的每个晶粒具有分散有多个离散区域的基体，平均基质组成由Si _{1-x1 x1 ，并且离散区域的平均组成由Si 1-x 2 x Ge x 2 x表示，其中X1}

公开(公告)号：US06411752B1

公开(公告)日：2002-06-25

申请号：US09510432

申请日：2000-02-22

申请人： Brent E. Little ,  Wugen Pan ,  Yasuo Kokubun ,  Sai T. Chu

发明人： Brent E. Little ,  Wugen Pan ,  Yasuo Kokubun ,  Sai T. Chu

IPC分类号： G02B635

CPC分类号： G02B6/126 ,  G02B6/12002 ,  G02B6/12007 ,  G02B6/122 ,  G02B2006/12109 ,  G02B2006/12116 ,  G02F1/3137 ,  G02F2203/15 ,  G02F2203/585

摘要： Optical resonators are vertically coupled on top of bus waveguides, and are separated from the waveguides by a buffer layer of arbitrary thickness. The vertical arrangement eliminates the need for etching fine gaps to separate the rings and guides, and reduces the alignment sensitivity between the desired position of the resonator and bus waveguides by a significant degree. The resonator and bus waveguides lie in different vertical layers, and each can therefore be optimized independently. A ring resonator can be optimized for higher index contrast in the plane, small size, and low bending loss, while the bus waveguides can be designed to have lower index contrast in the plane, low propagation losses, and dimensions that make them suitable for matching to optical fibers. The waveguides can also have any lateral placement underneath the ring resonators and are not restricted by the placement of the rings. Furthermore, with the resonators lying on the top layer of the structure, they are easily accessed for tuning and trimming.

摘要翻译： 光学谐振器垂直耦合在总线波导的顶部，并且通过任意厚度的缓冲层与波导分离。 垂直布置消除了蚀刻精细间隙以分离环和引导件的需要，并且在显着的程度上降低了谐振器和总线波导的期望位置之间的对准灵敏度。 谐振器和总线波导位于不同的垂直层中，因此可以独立地进行优化。 环形谐振器可以针对平面内的较高折射率对比度，小尺寸和低弯曲损耗进行优化，而总线波导可以设计成具有较低的平面折射率对比度，低传播损耗和尺寸，使其适合于匹配 到光纤。 波导还可以在环形谐振器下方具有任何横向放置，并且不受环的放置的限制。 此外，由于谐振器位于结构的顶层，所以它们容易被访问以进行调谐和修整。