公开(公告)号：US08017862B2

公开(公告)日：2011-09-13

申请号：US11583872

申请日：2006-10-20

申请人： Michio Kida ,  Wugen Pan ,  Kyojiro Kaneko ,  Kazuo Nakajima ,  Noritaka Usami ,  Kozo Fujiwara

发明人： Michio Kida ,  Wugen Pan ,  Kyojiro Kaneko ,  Kazuo Nakajima ,  Noritaka Usami ,  Kozo Fujiwara

IPC分类号： H01L25/00 ,  H01L31/00 ,  H02N6/00

CPC分类号： H01L31/0312 ,  H01L31/077 ,  Y02E10/50

摘要： In growing a single-crystal silicon by the present invention in a Czochralski method, after a surface of a silicon melt is brought into contact with a seed crystal in a crucible, the silicon melt being added with germanium, the single-crystal silicon is pulled while rotated, and the solar-cell single-crystal silicon substrate is sliced from the single-crystal silicon containing germanium, whereby a germanium content of solar-cell single-crystal silicon substrate is set in the range of not less than 0.03 mole % to less than 1.0 mole % when resistivity ranges from 1.4 to 1.9 Ωcm. Therefore, conversion efficiency is enhanced when compared with conventional single-crystal silicon substrates. Accordingly, solar cell power generation costs decreases, so that the single-crystal silicon of the present invention can widely be utilized as the substrate for the solar cell in which the high conversion efficiency is increasingly demanded.

摘要翻译： 在通过本发明的单晶硅以切克劳斯基法生长单晶硅之后，在将熔融硅表面与坩埚中的晶种接触之后，将硅熔体加入锗，将单晶硅拉出 同时旋转，并且从含单晶硅的锗切片太阳能电池单晶硅基板，由此将太阳能电池单晶硅基板的锗含量设定在不小于0.03摩尔％的范围内，相对于 当电阻率范围为1.4至1.9（OHgr·cm）时小于1.0摩尔％。 因此，与传统的单晶硅衬底相比，转换效率提高。 因此，太阳能电池发电成本降低，使得本发明的单晶硅可以广泛地用作其中越来越需要高转换效率的太阳能电池的基板。

公开(公告)号：US20070089781A1

公开(公告)日：2007-04-26

申请号：US11583872

申请日：2006-10-20

申请人： Michio Kida ,  Wugen Pan ,  Kyojiro Kaneko ,  Kazuo Nakajima ,  Noritaka Usami ,  Kozo Fujiwara

发明人： Michio Kida ,  Wugen Pan ,  Kyojiro Kaneko ,  Kazuo Nakajima ,  Noritaka Usami ,  Kozo Fujiwara

IPC分类号： H01L31/00

CPC分类号： H01L31/0312 ,  H01L31/077 ,  Y02E10/50

摘要： In growing a single-crystal silicon by the present invention in a Czochralski method, after a surface of a silicon melt is brought into contact with a seed crystal in a crucible, the silicon melt being added with germanium, the single-crystal silicon is pulled while rotated, and the solar-cell single-crystal silicon substrate is sliced from the single-crystal silicon containing germanium, whereby a germanium content of solar-cell single-crystal silicon substrate is set in the range of not less than 0.1 mole % and less than 1.0 mole %. Desirably the germanium content is set in the range of not less than 0.1 mole % to not more than 0.6 mole %, and the germanium content is set in the range of not less than 0.03 mole % to less than 1.0 mole % when resistivity ranges from 1.4 to 1.9 Ωcm. Therefore, conversion efficiency can largely be enhanced compared with the case where the conventional single-crystal silicon substrate is used. Accordingly, solar cell power generation costs decreases, so that the single-crystal silicon of the present invention can widely be utilized as the substrate for the solar cell in which the high conversion efficiency is increasingly demanded.

摘要翻译： 在通过本发明的单晶硅以切克劳斯基法生长单晶硅之后，在将熔融硅表面与坩埚中的晶种接触之后，将硅熔体加入锗，将单晶硅拉出 同时旋转，并且从含单晶硅的锗切片太阳能电池单晶硅衬底，由此将太阳能电池单晶硅衬底的锗含量设定在不小于0.1摩尔％的范围内，以及 小于1.0摩尔％。 理想地，锗含量设定在不小于0.1摩尔％至不大于0.6摩尔％的范围内，并且当电阻率范围为从不低于0.03摩尔％至小于1.0摩尔％时，锗含量设定在 1.4至1.9欧姆 因此，与使用传统的单晶硅衬底的情况相比，转换效率可以大大提高。 因此，太阳能电池发电成本降低，使得本发明的单晶硅可以广泛地用作其中越来越需要高转换效率的太阳能电池的基板。

公开(公告)号：US20070006915A1

公开(公告)日：2007-01-11

申请号：US11176389

申请日：2005-07-08

申请人： Kazuo Nakajima ,  Wugen Pan ,  Kozo Fujiwara ,  Noritaka Usami

发明人： Kazuo Nakajima ,  Wugen Pan ,  Kozo Fujiwara ,  Noritaka Usami

IPC分类号： H01L31/00

CPC分类号： H01L31/0312 ,  H01L31/03687 ,  H01L31/1812 ,  Y02E10/548

摘要： A multi-crystalline silicon germanium bulk crystal with microscopic compositional distribution is adapted for use in solar cells to substantially increase conversion efficiency. By controlling the average Ge concentration between 0.1 and 8.0 mole percent, significant improvements are attained with respect to short circuit current density and conversion efficiency.

摘要翻译： 具有微观组成​​分布的多晶硅锗体晶适用于太阳能电池，以显着提高转换效率。 通过控制平均Ge浓度在0.1和8.0摩尔％之间，在短路电流密度和转换效率方面可以获得显着的改进。

公开(公告)号：US07750232B2

公开(公告)日：2010-07-06

申请号：US11176389

申请日：2005-07-08

申请人： Kazuo Nakajima ,  Wugen Pan ,  Kozo Fujiwara ,  Noritaka Usami

发明人： Kazuo Nakajima ,  Wugen Pan ,  Kozo Fujiwara ,  Noritaka Usami

IPC分类号： H01L25/00

CPC分类号： H01L31/0312 ,  H01L31/03687 ,  H01L31/1812 ,  Y02E10/548

摘要： A multi-crystalline silicon germanium bulk crystal with microscopic compositional distribution is adapted for use in solar cells to substantially increase conversion efficiency. By controlling the average Ge concentration between 0.1 and 8.0 mole percent, significant improvements are attained with respect to short circuit current density and conversion efficiency.

摘要翻译： 具有微观组成​​分布的多晶硅锗体晶适用于太阳能电池，以显着提高转换效率。 通过控制平均Ge浓度在0.1和8.0摩尔％之间，在短路电流密度和转换效率方面可以获得显着的改进。

公开(公告)号：US07279632B2

公开(公告)日：2007-10-09

申请号：US10784932

申请日：2004-02-25

申请人： Kazuo Nakajima ,  Noritaka Usami ,  Kozo Fujikawa ,  Wugen Pan

发明人： Kazuo Nakajima ,  Noritaka Usami ,  Kozo Fujikawa ,  Wugen Pan

IPC分类号： H01L31/0264

CPC分类号： H01L31/03682 ,  C30B11/00 ,  C30B29/52 ,  H01L21/02532 ,  H01L21/02546 ,  H01L21/02625 ,  H01L31/1812 ,  Y02E10/546

摘要： Provided is a multi-element polycrystal formed by cooling a melt containing multiple components while controlling a cooling rate. The multi-element polycrystal is a mixed crystal essentially formed of elements Si and Ge having different absorption wavelength ranges and having a composition represented by Si1-XGeX, in which Ge absorbs light over a longer range of wavelength from a shorter to longer wavelength range than Si, each of the crystal grains of the mixed crystal has a matrix having a plurality of discrete regions dispersed therein, the average matrix composition is represented by Si1-x1Gex1 and the average composition of the discrete regions is represented by Si1-x2Gex2 where X1

摘要翻译： 提供了通过在控制冷却速率的同时冷却包含多个组分的熔体而形成的多元多晶体。 多元素多晶体是基本上由具有不同吸收波长范围的元素Si和Ge形成并具有由Si 1-X N Ge X X表示的组成的混合晶体，其中 Ge在比Si更短的波长范围内吸收较长的波长范围的光，混合晶体的每个晶粒具有分散有多个离散区域的基体，平均基质组成由Si _{1-x1 x1 ，并且离散区域的平均组成由Si 1-x 2 x Ge x 2 x表示，其中X1}

公开(公告)号：US20050183766A1

公开(公告)日：2005-08-25

申请号：US10784932

申请日：2004-02-25

申请人： Kazuo Nakajima ,  Noritaka Usami ,  Kozo Fujikawa ,  Wugen Pan

发明人： Kazuo Nakajima ,  Noritaka Usami ,  Kozo Fujikawa ,  Wugen Pan

IPC分类号： C30B11/00 ,  C30B29/52 ,  H01L21/208 ,  H01L31/00 ,  H01L31/0368 ,  H01L31/18

CPC分类号： H01L31/03682 ,  C30B11/00 ,  C30B29/52 ,  H01L21/02532 ,  H01L21/02546 ,  H01L21/02625 ,  H01L31/1812 ,  Y02E10/546

摘要： Provided is a multi-element polycrystal formed by cooling a melt containing multiple components while controlling a cooling rate. The multi-element polycrystal is a mixed crystal essentially formed of elements Si and Ge having different absorption wavelength ranges and having a composition represented by Si1-XGeX, in which Ge absorbs light over a longer range of wavelength from a shorter to longer wavelength range than Si, each of the crystal grains of the mixed crystal has a matrix having a plurality of discrete regions dispersed therein, the average matrix composition is represented by Si1-x1Gex1 and the average composition of the discrete regions is represented by Si1-x2Gex2 where X1

摘要翻译： 提供了通过在控制冷却速率的同时冷却包含多个组分的熔体而形成的多元多晶体。 多元素多晶体是基本上由具有不同吸收波长范围的元素Si和Ge形成并具有由Si 1-X N Ge X X表示的组成的混合晶体，其中 Ge在比Si更短的波长范围内吸收较长的波长范围的光，混合晶体的每个晶粒具有分散有多个离散区域的基体，平均基质组成由Si _{1-x1 x1 ，并且离散区域的平均组成由Si 1-x 2 x Ge x 2 x表示，其中X1}

公开(公告)号：US20050034756A1

公开(公告)日：2005-02-17

申请号：US10860060

申请日：2004-06-04

申请人： Kazuo Nakajima ,  Noritaka Usami ,  Toru Ujihara ,  Kozo Fujiwara

发明人： Kazuo Nakajima ,  Noritaka Usami ,  Toru Ujihara ,  Kozo Fujiwara

IPC分类号： C30B19/00 ,  C30B19/10 ,  C30B19/12 ,  C30B29/06 ,  H01L21/208 ,  H01L31/04 ,  H01L31/18 ,  H01L31/00

CPC分类号： H01L31/1804 ,  C30B19/00 ,  C30B29/06 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02573 ,  H01L21/02625 ,  Y02E10/547 ,  Y02P70/521

摘要： A Si melt is contacted to a main surface of a Si substrate made of metallurgical Si raw material to conduct liquid phase epitaxy within a temperature range around Si melting point and to form a Si crystal thin film on the main surface of the Si substrate.

摘要翻译： Si熔融物与由冶金Si原料制成的Si衬底的主表面接触，以在Si熔点附近的温度范围内进行液相外延生长，并在Si衬底的主表面上形成Si晶体薄膜。

公开(公告)号：US20100202955A1

公开(公告)日：2010-08-12

申请号：US12671139

申请日：2008-07-31

申请人： Noritaka Usami ,  Kazuo Nakajima ,  Isao Takahashi

发明人： Noritaka Usami ,  Kazuo Nakajima ,  Isao Takahashi

IPC分类号： C01B33/02

CPC分类号： C30B29/06 ,  C01B33/02 ,  C01B33/021 ,  C01B33/037 ,  C30B11/003 ,  C30B28/06

摘要： A method is provided for producing a Si bulk polycrystal ingot with high quality and high homogeneity, which has no significant crystal defects and is free from diffused impurities with a high yield. An upper face of a Si melt is locally cooled by bringing coolant close to a surface of the Si melt from an upper part of a crucible in the crucible containing the Si melt or by inserting the coolant into the Si melt. A dendrite crystal is formed in the vicinity of the surface of the Si melt. Cooling is performed thereafter while maintaining a proper temperature distribution, and a Si bulk crystal is grown from an upper part toward a lower part using a lower face of the dendrite crystal as a fresh growth face.

摘要翻译： 提供了一种制造高质量，高均匀性的Si本体多晶锭的方法，其没有明显的晶体缺陷，并且没有高收率的扩散杂质。 通过使冷却剂从包含Si熔体的坩埚中的坩埚的上部附近的Si熔体的表面接近或者将冷却剂插入Si熔体中来局部冷却Si熔体的上表面。 在Si熔体的表面附近形成枝晶。 然后在保持适当的温度分布的同时进行冷却，并且使用枝晶晶体的下表面作为新鲜生长面，从上部向下部生长Si本体晶体。

公开(公告)号：US08187563B2

公开(公告)日：2012-05-29

申请号：US12671139

申请日：2008-07-31

申请人： Noritaka Usami ,  Kazuo Nakajima ,  Isao Takahashi

发明人： Noritaka Usami ,  Kazuo Nakajima ,  Isao Takahashi

IPC分类号： C01B33/02 ,  B22D27/04 ,  B22D7/10 ,  B22D15/00 ,  C30B9/00 ,  C30B11/00 ,  C30B17/00 ,  C30B21/02 ,  C30B28/06

CPC分类号： C30B29/06 ,  C01B33/02 ,  C01B33/021 ,  C01B33/037 ,  C30B11/003 ,  C30B28/06

摘要： A method is provided for producing a Si bulk polycrystal ingot with high quality and high homogeneity, which has no significant crystal defects and is free from diffused impurities with a high yield. An upper face of a Si melt is locally cooled by bringing coolant close to a surface of the Si melt from an upper part of a crucible in the crucible containing the Si melt or by inserting the coolant into the Si melt. A dendrite crystal is formed in the vicinity of the surface of the Si melt. Cooling is performed thereafter while maintaining a proper temperature distribution, and a Si bulk crystal is grown from an upper part toward a lower part using a lower face of the dendrite crystal as a fresh growth face.

摘要翻译： 提供了一种制造高质量，高均匀性的Si本体多晶锭的方法，其没有明显的晶体缺陷，并且没有高收率的扩散杂质。 通过使冷却剂从包含Si熔体的坩埚中的坩埚的上部附近的Si熔体的表面接近或者将冷却剂插入Si熔体中来局部冷却Si熔体的上表面。 在Si熔体的表面附近形成枝晶。 然后在保持适当的温度分布的同时进行冷却，并且使用枝晶晶体的下表面作为新鲜生长面，从上部向下部生长Si本体晶体。

公开(公告)号：US20120049150A1

公开(公告)日：2012-03-01

申请号：US13318913

申请日：2010-05-11

申请人： Takashi Suemasu ,  Noritaka Usami

发明人： Takashi Suemasu ,  Noritaka Usami

IPC分类号： H01L29/06 ,  H01L21/205

CPC分类号： H01L31/032 ,  H01L21/02381 ,  H01L21/02491 ,  H01L21/02521 ,  H01L21/02576 ,  H01L21/02631 ,  H01L31/072 ,  H01L31/18 ,  Y02E10/50

摘要： A semiconductor device includes: a silicon layer (12); an intermediate silicide layer (28) that is provided on the silicon layer (12), has openings, and includes barium silicide; and an upper silicide layer (14) that covers the intermediate silicide layer (28), is positioned to be in contact with the silicon layer (12) through the openings, has a higher dopant concentration than the dopant concentration of the intermediate silicide layer (28), and includes barium silicide.

摘要翻译： 半导体器件包括：硅层（12）; 设置在硅层（12）上的中间硅化物层（28）具有开口，并且包括硅化钡; 并且覆盖中间硅化物层（28）的上硅化物层（14）被定位成通过开口与硅层（12）接触，具有比中间体硅化物层的掺杂剂浓度更高的掺杂剂浓度（ 28），并且包括硅化钡。