摘要:
A semiconductor memory device provided with at least one block pair. Each block contains therein bit line pairs, word lines, memory cells, and circuitry for writing data by cooperating with the bit line pairs. The wiring pattern of the writing part located in one of the blocks is reversed to that of the writing part located in another block adjacent thereto, whereby the two facing bit lines of different blocks assume opposite logic levels when the same data logic is written into all the memory cells.
摘要:
This invention relates to a semiconductor memory having flip-flops which hold the address input in order to absorb skew thereof within the same chip. The flip-flops are connected to be of the master-slave type and an address decoder is provided between the master flip-flops and the slave flip-flops. A part of the time required for latching the address signal into the master flip-flops and a part of the time required for decoder operation are overlapped, and thereby a high operation rate can be realized. Parts of the circuits forming the flip-flop circuits are used in common to the address input buffer and also in common to the word line driver circuits.
摘要:
A method for controlling the readout or write-in of a semiconductor memory device, and an apparatus for the same. During the selection of memory cells in a memory cell array to readout or write in data, the steps of selecting the memory cells of a specific address in the memory cell array include accessing the memory cells of the specific address and then and only then accessing the memory cells of the designated address corresponding to address signals input from the outside.