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    Aluminum conducting wire
    2.
    发明授权
    Aluminum conducting wire 有权
    铝导线

    公开(公告)号：US07550675B2

    公开(公告)日：2009-06-23

    申请号：US11835884

    申请日：2007-08-08

    申请人： Kyota Susai ,  Kazuo Yoshida

    发明人： Kyota Susai ,  Kazuo Yoshida

    IPC分类号： H01B7/00

    CPC分类号： H01B1/023 ,  C22C21/00

    摘要： An aluminum conducting wire, containing a stranded conductor that is formed by stranding solid conductors of an aluminum alloy, in which the aluminum alloy comprises 0.1 to 1.0 mass % of Fe, 0.05 to 0.5 mass % of Cu, and 0.05 to 0.4 mass % of Mg, in which the total amount of Cu and Mg is 0.3 to 0.8 mass %, with the balance being aluminum and inevitable impurities, and a solid conductor of an aluminum alloy for the aluminum conducting wire.

    摘要翻译： 一种铝导线，其包含通过绞合铝合金的实心导体而形成的绞合导体，其中所述铝合金包含0.1〜1.0质量％的Fe，0.05〜0.5质量％的Cu和0.05〜0.4质量％的Cu Mg，其中Cu和Mg的总量为0.3〜0.8质量％，余量为铝和不可避免的杂质，铝导体的铝合金的固体导体。

    Concentric stranded conductor
    3.
    发明授权
    Concentric stranded conductor 有权
    同心绞线

    公开(公告)号：US07409816B2

    公开(公告)日：2008-08-12

    申请号：US11790691

    申请日：2007-04-26

    申请人： Kyota Susai ,  Masanobu Hirai ,  Kazuo Yoshida

    发明人： Kyota Susai ,  Masanobu Hirai ,  Kazuo Yoshida

    IPC分类号： D07B1/00

    CPC分类号： H01B13/02 ,  H01B9/006 ,  H01B13/0006

    摘要： A concentric stranded conductor having a concentric strand having multiple strands. Each strand has multiple single wires. The concentric stranded conductor has a central core strand (5) and a first concentric strand layer (11) having multiple first-layer strands (9) twisted around the central core strand. The twist pitch of the central core strand is from 8 to 70 times the distance between diametrically opposed outer wires of the central core strand, the twist pitch of the first concentric strand layer is from 8 to 30 times the distance between diametrically opposed strands of the first concentric strand layer. |α−(β+γ)| is 15 degrees or less, where α is the twist angle of the central core strand and β and γ are the twist angles of the first-layer strands and first concentric strand layer, and the single wires are made of an aluminum or aluminum alloy to have elongation of 2% or more.

    摘要翻译： 具有同心绞线的同心绞合导体，其具有多股线。 每条线具有多条单根线。 同心绞合导体具有中心芯线（5）和具有围绕中心芯线绞合的多个第一层绞线（9）的第一同心绞线层（11）。 中心芯股线的捻距是中心纤芯绞线的直径相对的外线之间的距离的8至70倍，第一同心绞线层的扭绞间距是直径相对的绞线之间的距离的8至30倍 第一同心线层。 | alpha-（beta + gamma）| 是15度以下，其中α是中心芯股的扭转角，β和γ是第一层股线和第一同心股线层的扭转角，单根线由铝或铝合金制成， 伸长率为2％以上。

    Concentric stranded conductor
    6.
    发明申请
    Concentric stranded conductor 有权
    同心绞线

    公开(公告)号：US20070251204A1

    公开(公告)日：2007-11-01

    申请号：US11790691

    申请日：2007-04-26

    申请人： Kyota Susai ,  Masanobu Hirai ,  Kazuo Yoshida

    发明人： Kyota Susai ,  Masanobu Hirai ,  Kazuo Yoshida

    IPC分类号： D02G3/36

    CPC分类号： H01B13/02 ,  H01B9/006 ,  H01B13/0006

    摘要： A concentric stranded conductor having a concentric strand having multiple bunched strands twisted together, in which each bunched strand has multiple single wires twisted together; wherein the concentric stranded conductor has a central core bunched strand (5) and a first-layer concentric strand (11) having multiple first-layer bunched strands (9) twisted together around the central core bunched strand (5); wherein a twist pitch of the central core bunched strand (5) is from 8 to 70 times an outer strands distance thereof, a twist pitch of the first-layer concentric strand (11) is from 8 to 30 times an outer strands distance thereof, a difference between a twist angle of the central core bunched strand (5) and a sum of twist angles of the first-layer bunched strands (9) and first-layer concentric strand (11) is 15 degrees or less, and each single wire is made of an aluminum or aluminum alloy, having elongation of 2% or more.

    摘要翻译： 具有同心绞线的同心绞合导体，其具有扭绞在一起的多个聚束线，其中每个绞合绞线具有扭绞在一起的多根单丝; 其中所述同心绞合导体具有中心芯聚束线（5）和具有围绕所述中心芯绞线（5）扭绞在一起的多个第一层聚束线（9）的第一层同心绞线（11）。 其特征在于，所述中心芯聚束线（5）的扭绞间距为其外股线距离的8〜70倍，所述第一层同轴线股（11）的扭绞间距为其外股线距离的8〜30倍， 中心芯聚束线（5）的扭转角与第一层聚束线（9）和第一层同轴绞线（11）的扭转角之和为15度以下，各单线 由铝或铝合金制成，伸长率为2％以上。

    METHOD FOR PRODUCING NITRIDE SINGLE CRYSTAL AND AUTOCLAVE FOR USE IN THE METHOD
    10.
    发明申请
    METHOD FOR PRODUCING NITRIDE SINGLE CRYSTAL AND AUTOCLAVE FOR USE IN THE METHOD 审中-公开
    用于生产氮化物单晶和自动化的方法用于该方法

    公开(公告)号：US20140205840A1

    公开(公告)日：2014-07-24

    申请号：US14128474

    申请日：2011-06-23

    申请人： Kensuke Aoki ,  Kazuo Yoshida ,  Katsuhito Nakamura ,  Tsuguo Fukuda

    发明人： Kensuke Aoki ,  Kazuo Yoshida ,  Katsuhito Nakamura ,  Tsuguo Fukuda

    IPC分类号： C30B7/10 ,  C01B21/06 ,  C30B29/40

    CPC分类号： C30B7/105 ,  C01B21/0632 ,  C30B29/406 ,  Y10T117/1096 ,  Y10T428/2982

    摘要： There is provided a novel method for producing a nitride single crystal with both a rapid crystal growth rate and high crystal quality, as well as a novel autoclave that can be used in the method. The invention provides a method for producing a Ga-containing nitride single crystal by an ammonothermal method, comprising introducing at least a starting material, an acidic mineralizer and ammonia into an autoclave, and then growing a Ga-containing nitride single crystal under conditions wherein the temperature (T1) at the single crystal growth site is 600° C. to 850° C., the temperature (T1) at the single crystal growth site and the temperature (T2) at the starting material feeder site are in the relationship T1>T2, and the pressure in the autoclave is 40 MPa to 250 MPa, as well as an autoclave that can be used in the method.

    摘要翻译： 提供了一种用于生产具有快速晶体生长速率和高晶体质量的氮化物单晶的新颖方法，以及可用于该方法的新型高压釜。 本发明提供了一种通过氨热法制备含Ga氮化物单晶的方法，包括将至少一种起始材料，酸性矿化剂和氨引入高压釜中，然后在其中使含Ga的氮化物单晶生长 单晶生长部位的温度（T1）为600℃〜850℃，单晶生长部位的温度（T1）和原料供给部位的温度（T2）为T1> T2，高压釜中的压力为40MPa〜250MPa，以及可用于该方法的高压釜。