公开(公告)号：US08889480B2

公开(公告)日：2014-11-18

申请号：US13837879

申请日：2013-03-15

申请人： Kazushige Takechi ,  Mitsuru Nakata

发明人： Kazushige Takechi ,  Mitsuru Nakata

IPC分类号： H01L21/00 ,  H01L29/786 ,  H01L29/49 ,  H01L29/66

CPC分类号： H01L21/02694 ,  H01L21/02554 ,  H01L21/02587 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/7869 ,  H01L29/78696

摘要： A method of forming a thin-film device includes forming an oxide-semiconductor film formed on the first electrical insulator, and forming a second electrical insulator formed on the oxide-semiconductor film, the oxide-semiconductor film defining an active layer. The oxide-semiconductor film is comprised of a first interface layer located at an interface with the first electrical insulating insulator, a second interface layer located at an interface with the second electrical insulator, and a bulk layer other than the first and second interface layers. The method further includes oxidizing the oxide-semiconductor film to render a density of oxygen holes in at least one of the first and second interlayer layers is smaller than a density of oxygen holes in the bulk layer.

摘要翻译： 形成薄膜器件的方法包括形成形成在第一电绝缘体上的氧化物半导体膜，以及形成在氧化物半导体膜上形成的第二电绝缘体，所述氧化物半导体膜限定有源层。 氧化物半导体膜由位于与第一电绝缘绝缘体的界面处的第一界面层，位于与第二电绝缘体的界面处的第二界面层以及不同于第一界面层和第二界面层的体层组成。 该方法还包括氧化氧化物半导体膜以使第一和第二层间层中的至少一个中的氧空穴的密度小于本体层中的氧空穴的密度。

公开(公告)号：US07804091B2

公开(公告)日：2010-09-28

申请号：US11890677

申请日：2007-08-07

申请人： Kazushige Takechi ,  Mitsuru Nakata

发明人： Kazushige Takechi ,  Mitsuru Nakata

IPC分类号： H01L31/00

CPC分类号： H01L27/124 ,  H01L27/1225 ,  H01L27/1288 ,  H01L29/78618 ,  H01L29/7869

摘要： A thin-film transistor array includes an electrically insulating substrate, a plurality of thin-film transistors arranged in a matrix on the substrate, and each including a channel, a source, and a drain each comprised of an oxide-semiconductor film, a pixel electrode integrally formed with the drain, a source signal line through which a source signal is transmitted to a group of thin-film transistors, a gate signal line through which a gate signal is transmitted to a group of thin-film transistors, a source terminal formed at an end of the source signal line, and a gate terminal formed at an end of the gate signal line. The source terminal and the gate terminal are formed in the same layer as a layer in which the channel is formed. The source terminal and the gate terminal have the same electric conductivity as that of the pixel electrode.

摘要翻译： 薄膜晶体管阵列包括电绝缘基板，在基板上以矩阵形式布置的多个薄膜晶体管，每个薄膜晶体管包括沟道，源极和漏极，每个沟道，源极和漏极由氧化物半导体膜，像素 与漏极整体形成的电极，将源极信号通过​​该源极信号传输到一组薄膜晶体管的源极信号线，栅极信号线，栅极信号通过​​该栅极信号线传输到一组薄膜晶体管，源极端子 形成在源极信号线的端部，以及栅极端子，形成在栅极信号线的一端。 源极端子和栅极端子形成在与形成沟道的层相同的层中。 源极端子和栅极端子具有与像素电极相同的导电性。

公开(公告)号：US20100123132A1

公开(公告)日：2010-05-20

申请号：US12620709

申请日：2009-11-18

申请人： Mitsuru Nakata ,  Kazushige Takechi

发明人： Mitsuru Nakata ,  Kazushige Takechi

IPC分类号： H01L29/24 ,  H01L21/477

CPC分类号： H01L29/7869 ,  H01L29/66969

摘要： To form an oxide semiconductor TFT having a fine property, which can be utilized for driving elements of a display, on a cheap glass substrate or a resin substrate such as PET that is light and flexible with fine regenerability and yield. Through radiating pulse light to an oxide semiconductor, a fine-quality oxide semiconductor film can be formed on a glass substrate or a resin substrate such as PET. This makes it possible to manufacture thin film devices having a fine property with fine regenerability and yield.

摘要翻译： 在廉价的玻璃基板或诸如PET的树脂基板上形成具有微细特性的氧化物半导体TFT，其可以用于显示器的驱动元件，其具有光和柔性，具有良好的可再生性和产率。 通过向氧化物半导体照射脉冲光，能够在玻璃基板或PET等树脂基板上形成精细的氧化物半导体膜。 这使得可以制造具有精细再生性和良率的微细性的薄膜器件。

公开(公告)号：US20070049061A1

公开(公告)日：2007-03-01

申请号：US11508452

申请日：2006-08-23

申请人： Kazushige Takechi ,  Hiroshi Kanou ,  Mitsuru Nakata

发明人： Kazushige Takechi ,  Hiroshi Kanou ,  Mitsuru Nakata

IPC分类号： H05K1/00

CPC分类号： G02F1/13454 ,  G02F1/133382 ,  H01L27/12

摘要： An electronic device of the present invention includes a first substrate provided with a thin film active element, having a thickness of 200 μm or lower, and a second substrate formed with a high thermal conductivity portion. The second substrate is applied to one surface of the two surfaces of the first substrate, i.e., the surface being the side other than the side that formed with the thin film active element. The thin film active element has a maximum power consumption of 0.01 to 1 mW. The high thermal conductivity portion is a region that corresponds to the position of the thin film active element and whose thermal conductivity falls within the range from 0.1 to 4 W/cm·deg.

摘要翻译： 本发明的电子器件包括具有厚度为200μm或更低的薄膜有源元件的第一衬底和形成有高导热率部分的第二衬底。 将第二基板施加到第一基板的两个表面的一个表面，即除了用薄膜有源元件形成的侧面以外的表面。 薄膜有源元件的最大功耗为0.01至1mW。 高导热率部分是与薄膜有源元件的位置相对应的区域，其导热率在0.1至4W / cm 2的范围内。

公开(公告)号：US20060276007A1

公开(公告)日：2006-12-07

申请号：US11503286

申请日：2006-08-14

申请人： Mitsuru Nakata ,  Kazushige Takechi ,  Hiroshi Kanoh

发明人： Mitsuru Nakata ,  Kazushige Takechi ,  Hiroshi Kanoh

IPC分类号： H01L21/84 ,  H01L21/30

CPC分类号： H01L27/1266 ,  H01L21/76256 ,  H01L27/1214 ,  H01L29/66757 ,  H01L2221/6835 ,  H01L2221/68363

摘要： Method of manufacturing a thin film device substrate wherein no trench fabrication is required to be applied onto the substrate surface, and a material which is impervious to light can be used, and the substrate can be peeled off quickly. Firstly, a peeling-off film, a silicon oxide film and an amorphous silicon film are formed in succession on a glass substrate, and the amorphous silicon film is irradiated from above to obtain a polycrystalline silicon film. Subsequently, using the polycrystalline silicon film as an active layer, a TFT is formed, and then a plastic substrate is bonded thereon, and finally the glass substrate is peeled off with the peeling-off film, to complete transfer of the TFT. Because the peeling-off film has a gap space, its etching rate is high. Therefore, it is unnecessary to form a trench for supplying an etchant on the surface of the glass substrate.

公开(公告)号：US08420442B2

公开(公告)日：2013-04-16

申请号：US12983673

申请日：2011-01-03

申请人： Kazushige Takechi ,  Mitsuru Nakata

发明人： Kazushige Takechi ,  Mitsuru Nakata

IPC分类号： H01L21/00

CPC分类号： H01L21/02694 ,  H01L21/02554 ,  H01L21/02587 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/7869 ,  H01L29/78696

摘要： A method of forming a thin-film device includes forming an oxide-semiconductor film formed on the first electrical insulator, and forming a second electrical insulator formed on the oxide-semiconductor film, the oxide-semiconductor film defining an active layer. The oxide-semiconductor film is comprised of a first interface layer located at an interface with the first electrical insulating insulator, a second interface layer located at an interface with the second electrical insulator, and a bulk layer other than the first and second interface layers. The method further includes oxidizing the oxide-semiconductor film to render a density of oxygen holes in at least one of the first and second interlayer layers is smaller than a density of oxygen holes in the bulk layer.

摘要翻译： 形成薄膜器件的方法包括形成形成在第一电绝缘体上的氧化物半导体膜，以及形成在氧化物半导体膜上形成的第二电绝缘体，所述氧化物半导体膜限定有源层。 氧化物半导体膜由位于与第一电绝缘绝缘体的界面处的第一界面层，位于与第二电绝缘体的界面处的第二界面层以及不同于第一界面层和第二界面层的体层组成。 该方法还包括氧化氧化物半导体膜以使第一和第二层间层中的至少一个中的氧空穴的密度小于本体层中的氧空穴的密度。

公开(公告)号：US20110097844A1

公开(公告)日：2011-04-28

申请号：US12983673

申请日：2011-01-03

申请人： Kazushige Takechi ,  Mitsuru Nakata

发明人： Kazushige Takechi ,  Mitsuru Nakata

IPC分类号： H01L21/36

CPC分类号： H01L21/02694 ,  H01L21/02554 ,  H01L21/02587 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/7869 ,  H01L29/78696

摘要： A method of forming a thin-film device includes forming an oxide-semiconductor film formed on the first electrical insulator, and forming a second electrical insulator formed on the oxide-semiconductor film, the oxide-semiconductor film defining an active layer. The oxide-semiconductor film is comprised of a first interface layer located at an interface with the first electrical insulating insulator, a second interface layer located at an interface with the second electrical insulator, and a bulk layer other than the first and second interface layers. The method further includes oxidizing the oxide-semiconductor film to render a density of oxygen holes in at least one of the first and second interlayer layers is smaller than a density of oxygen holes in the bulk layer.

摘要翻译： 形成薄膜器件的方法包括形成形成在第一电绝缘体上的氧化物半导体膜，以及形成在氧化物半导体膜上形成的第二电绝缘体，所述氧化物半导体膜限定有源层。 氧化物半导体膜由位于与第一电绝缘绝缘体的界面处的第一界面层，位于与第二电绝缘体的界面处的第二界面层以及不同于第一界面层和第二界面层的体层组成。 该方法还包括氧化氧化物半导体膜以使第一和第二层间层中的至少一个中的氧空穴的密度小于本体层中的氧空穴的密度。

公开(公告)号：US07884360B2

公开(公告)日：2011-02-08

申请号：US11890426

申请日：2007-08-06

申请人： Kazushige Takechi ,  Mitsuru Nakata

发明人： Kazushige Takechi ,  Mitsuru Nakata

IPC分类号： H01L21/00

CPC分类号： H01L21/02694 ,  H01L21/02554 ,  H01L21/02587 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/7869 ,  H01L29/78696

摘要： A thin-film device includes a first electrical insulator, an oxide-semiconductor film formed on the first electrical insulator, and a second electrical insulator formed on the oxide-semiconductor film, the oxide-semiconductor film defining an active layer. The oxide-semiconductor film is comprised of a first interface layer located at an interface with the first electrical insulating insulator, a second interface layer located at an interface with the second electrical insulator, and a bulk layer other than the first and second interface layers. A density of oxygen holes in at least one of the first and second interlayer layers is smaller than a density of oxygen holes in the bulk layer.

摘要翻译： 薄膜器件包括第一电绝缘体，形成在第一电绝缘体上的氧化物半导体膜和形成在氧化物半导体膜上的第二电绝缘体，所述氧化物半导体膜限定有源层。 氧化物半导体膜由位于与第一电绝缘绝缘体的界面处的第一界面层，位于与第二电绝缘体的界面处的第二界面层以及不同于第一界面层和第二界面层的体层组成。 第一和第二层间层中的至少一个中的氧空穴的密度小于本体层中的氧空穴的密度。

公开(公告)号：US07256102B2

公开(公告)日：2007-08-14

申请号：US10976846

申请日：2004-11-01

申请人： Mitsuru Nakata ,  Kazushige Takechi ,  Hiroshi Kanoh

发明人： Mitsuru Nakata ,  Kazushige Takechi ,  Hiroshi Kanoh

IPC分类号： H01L21/30

CPC分类号： H01L27/1266 ,  H01L27/1214 ,  H01L29/66757 ,  H01L2221/6835 ,  H01L2221/68359 ,  H01L2221/68363 ,  H01L2221/68368

摘要： An object of the present invention is to prevent the thin film device formed by laser annealing from making, due to overheat, abnormal operations. Firstly, on a glass substrate 101. a heat insulating film, a silicon oxide film and an amorphous silicon film are formed in succession, and the amorphous silicon film is irradiated from above with a laser beam of an excimer laser. After being molten, the amorphous silicon film undergoes recrystallization to form a polycrystalline silicon film. Subsequently, using the polycrystalline silicon film as an active layer, a TFT is formed, and then a plastic substrate is bonded onto the TFT, and finally the glass substrate is peeled off by way of the heat insulating film, whereby a transfer of the TFT is completed. Because the heat insulating film is removed, abnormality caused by overheat at the time of operation is well prevented from occurring.

摘要翻译： 本发明的目的在于防止由于过热引起的激光退火所形成的薄膜器件的异常操作。 首先，在玻璃基板101上。 依次形成绝热膜，氧化硅膜和非晶硅膜，用准分子激光的激光从上方照射非晶硅膜。 熔融后，非晶硅膜经过重结晶，形成多晶硅膜。 随后，使用多晶硅膜作为有源层，形成TFT，然后将塑料基板接合到TFT上，最后通过绝热膜剥离玻璃基板，由此TFT的转印 完成了。 由于去除绝热膜，因此能够良好地防止在运转时由过热导致的异常。

公开(公告)号：US20100176398A1

公开(公告)日：2010-07-15

申请号：US12749063

申请日：2010-03-29

申请人： Kazushige Takechi ,  Hiroshi Kanou ,  Mitsuru Nakata

发明人： Kazushige Takechi ,  Hiroshi Kanou ,  Mitsuru Nakata

IPC分类号： H01L29/66

CPC分类号： G02F1/13454 ,  G02F1/133382 ,  H01L27/12

摘要： An electronic device of the present invention includes a first substrate provided with a thin film active element, having a thickness of 200 μm or lower, and a second substrate formed with a high thermal conductivity portion. The second substrate is applied to one surface of the two surfaces of the first substrate, i.e., the surface being the side other than the side that formed with the thin film active element. The thin film active element has a maximum power consumption of 0.01 to 1 mW. The high thermal conductivity portion is a region that corresponds to the position of the thin film active element and whose thermal conductivity falls within the range from 0.1 to 4 W/cm·deg.

摘要翻译： 本发明的电子器件包括具有厚度为200μm以下的薄膜有源元件的第一基板和形成有高导热率部分的第二基板。 将第二基板施加到第一基板的两个表面的一个表面，即除了用薄膜有源元件形成的侧面以外的表面。 薄膜有源元件的最大功耗为0.01至1mW。 高导热率部分是与薄膜有源元件的位置对应的区域，其导热率在0.1〜4W / cm·℃的范围内。