公开(公告)号：US07300881B2

公开(公告)日：2007-11-27

申请号：US10935103

申请日：2004-09-08

申请人： Kazuya Kato ,  Katsuhiko Ono ,  Hideki Mizuno ,  Masahiro Ogasawara ,  Akinori Kitamura ,  Noriyuki Kobayashi ,  Yasushi Inata ,  Shin Okamoto

发明人： Kazuya Kato ,  Katsuhiko Ono ,  Hideki Mizuno ,  Masahiro Ogasawara ,  Akinori Kitamura ,  Noriyuki Kobayashi ,  Yasushi Inata ,  Shin Okamoto

IPC分类号： H01L21/302 ,  H01L21/3065

CPC分类号： H01J37/32082 ,  H01L21/31116 ,  H01L21/31138

摘要： A plasma etching is performed on a substrate having a pattern wherein an interval between neighboring openings formed on a resist mask is equal to or less than 200 nm, wherein the etching is performed by converting a processing gas comprising an active species generating gas which includes a compound having carbon and fluorine, and a nonreactive gas which includes xenon gas into a plasma. The nonreactive gas further includes argon gas.

摘要翻译： 在具有图案的基板上进行等离子体蚀刻，其中形成在抗蚀剂掩模上的相邻开口之间的间隔等于或小于200nm，其中通过将包括活性物质产生气体的处理气体转化为包括 具有碳和氟的化合物，以及包含氙气进入等离子体的非反应性气体。 非反应性气体还包括氩气。

公开(公告)号：US20050101137A1

公开(公告)日：2005-05-12

申请号：US10935103

申请日：2004-09-08

申请人： Kazuya Kato ,  Katsuhiko Ono ,  Hideki Mizuno ,  Masahiro Ogasawara ,  Akinori Kitamura ,  Noriyuki Kobayashi ,  Yasushi Inata ,  Shin Okamoto

发明人： Kazuya Kato ,  Katsuhiko Ono ,  Hideki Mizuno ,  Masahiro Ogasawara ,  Akinori Kitamura ,  Noriyuki Kobayashi ,  Yasushi Inata ,  Shin Okamoto

IPC分类号： H01L21/28 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/768 ,  H01L21/302 ,  H01L21/461

CPC分类号： H01J37/32082 ,  H01L21/31116 ,  H01L21/31138

摘要： A plasma etching is performed on a substrate having a pattern wherein an interval between neighboring openings formed on a resist mask is equal to or less than 200 nm, wherein the etching is performed by converting a processing gas comprising an active species generating gas which includes a compound having carbon and fluorine, and a nonreactive gas which includes xenon gas into a plasma. The nonreactive gas further includes argon gas.

摘要翻译： 在具有图案的基板上进行等离子体蚀刻，其中形成在抗蚀剂掩模上的相邻开口之间的间隔等于或小于200nm，其中通过将包括活性物质产生气体的处理气体转化为包括 具有碳和氟的化合物，以及包含氙气进入等离子体的非反应性气体。 非反应性气体还包括氩气。

公开(公告)号：US20070275560A1

公开(公告)日：2007-11-29

申请号：US11708676

申请日：2007-02-21

申请人： Eiichi Nishimura ,  Yoshihide Kihara ,  Yasushi Inata ,  Lyndon Lin

发明人： Eiichi Nishimura ,  Yoshihide Kihara ,  Yasushi Inata ,  Lyndon Lin

IPC分类号： H01L21/3065 ,  C23F1/08

CPC分类号： G03F7/427 ,  G03F7/40 ,  H01L21/31138 ,  H01L21/76814 ,  H01L21/76831

摘要： A low dielectric constant film containing a silicon, a carbon, an oxygen, and a hydrogen is formed on a substrate as a semiconductor wafer, and a resist film is formed on the low dielectric constant film. Then, the low dielectric constant film is etched with the use of the resist film as a mask to form an exposed surface of the low dielectric constant film. Next, there is deposited a protective film that covers the exposed surface of the low dielectric constant film formed by etching. Thereafter, by ashing with the use of a plasma containing an oxygen, the protective film and the resist film are removed. During the ashing, desorption of the carbon from an insulation film is restrained by the protective film.

摘要翻译： 在作为半导体晶片的基板上形成含有硅，碳，氧，氢的低介电常数膜，在低介电常数膜上形成抗蚀剂膜。 然后，使用抗蚀剂膜作为掩模来蚀刻低介电常数膜，以形成低介电常数膜的暴露表面。 接下来，沉积覆盖通过蚀刻形成的低介电常数膜的暴露表面的保护膜。 此后，通过使用含有氧的等离子体灰化，除去保护膜和抗蚀剂膜。 在灰化期间，由绝缘膜解吸碳被保护膜抑制。