公开(公告)号：US07300881B2

公开(公告)日：2007-11-27

申请号：US10935103

申请日：2004-09-08

申请人： Kazuya Kato ,  Katsuhiko Ono ,  Hideki Mizuno ,  Masahiro Ogasawara ,  Akinori Kitamura ,  Noriyuki Kobayashi ,  Yasushi Inata ,  Shin Okamoto

发明人： Kazuya Kato ,  Katsuhiko Ono ,  Hideki Mizuno ,  Masahiro Ogasawara ,  Akinori Kitamura ,  Noriyuki Kobayashi ,  Yasushi Inata ,  Shin Okamoto

IPC分类号： H01L21/302 ,  H01L21/3065

CPC分类号： H01J37/32082 ,  H01L21/31116 ,  H01L21/31138

摘要： A plasma etching is performed on a substrate having a pattern wherein an interval between neighboring openings formed on a resist mask is equal to or less than 200 nm, wherein the etching is performed by converting a processing gas comprising an active species generating gas which includes a compound having carbon and fluorine, and a nonreactive gas which includes xenon gas into a plasma. The nonreactive gas further includes argon gas.

摘要翻译： 在具有图案的基板上进行等离子体蚀刻，其中形成在抗蚀剂掩模上的相邻开口之间的间隔等于或小于200nm，其中通过将包括活性物质产生气体的处理气体转化为包括 具有碳和氟的化合物，以及包含氙气进入等离子体的非反应性气体。 非反应性气体还包括氩气。

公开(公告)号：US20050101137A1

公开(公告)日：2005-05-12

申请号：US10935103

申请日：2004-09-08

申请人： Kazuya Kato ,  Katsuhiko Ono ,  Hideki Mizuno ,  Masahiro Ogasawara ,  Akinori Kitamura ,  Noriyuki Kobayashi ,  Yasushi Inata ,  Shin Okamoto

发明人： Kazuya Kato ,  Katsuhiko Ono ,  Hideki Mizuno ,  Masahiro Ogasawara ,  Akinori Kitamura ,  Noriyuki Kobayashi ,  Yasushi Inata ,  Shin Okamoto

IPC分类号： H01L21/28 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/768 ,  H01L21/302 ,  H01L21/461

CPC分类号： H01J37/32082 ,  H01L21/31116 ,  H01L21/31138

摘要： A plasma etching is performed on a substrate having a pattern wherein an interval between neighboring openings formed on a resist mask is equal to or less than 200 nm, wherein the etching is performed by converting a processing gas comprising an active species generating gas which includes a compound having carbon and fluorine, and a nonreactive gas which includes xenon gas into a plasma. The nonreactive gas further includes argon gas.

摘要翻译： 在具有图案的基板上进行等离子体蚀刻，其中形成在抗蚀剂掩模上的相邻开口之间的间隔等于或小于200nm，其中通过将包括活性物质产生气体的处理气体转化为包括 具有碳和氟的化合物，以及包含氙气进入等离子体的非反应性气体。 非反应性气体还包括氩气。

公开(公告)号：US20140323677A1

公开(公告)日：2014-10-30

申请号：US14241565

申请日：2012-08-29

申请人： Akinori Kitamura ,  Naomasa Furuta

发明人： Akinori Kitamura ,  Naomasa Furuta

IPC分类号： C08G77/20

CPC分类号： C08G77/20 ,  C08F299/08 ,  C08G77/16 ,  C08K5/0025 ,  C08K5/07 ,  C09D183/06 ,  C08L83/04

摘要： The present invention is a method for producing a thermal-shock-resistant cured product, the method involving: a condensation step of preparing a cured-product precursor by subjecting monomers represented by general formulae (1) to (5) to copolycondensation at a specific rate in the presence of an acid catalyst; and a curing step of curing the cured-product precursor by polymerizing at least a portion of ethylenically unsaturated bonds in the cured-product precursor. Also, the present invention is a cured product prepared by said method. (In formulae (1) to (5): (X) is a siloxane bond producing group; R1, R2, and R4 are each a group selected from among a hydrogen atom, an alkyl group, an aralkyl group, a cycloalkyl group, a cycloaralkyl group, an aryl group, and a group having an ethylenically unsaturated bond; R3 and R5 are each a group selected from among a hydrogen atom, an alkyl group, an aralkyl group, a cycloalkyl group, a cycloaralkyl group, and an aryl group; and at least one of R1, R2, and R4 is a group having an ethylenically unsaturated bond.)

摘要翻译： 本发明是一种耐热冲击性固化物的制造方法，其特征在于，具有以下工序：将通式（1）〜（5）表示的单体进行共聚缩聚而制备固化物前体的缩合工序 在酸催化剂存在下的速率; 以及通过在固化产物前体中聚合至少一部分烯键式不饱和键来固化固化产物前体的固化步骤。 此外，本发明是通过所述方法制备的固化产物。 （式（1）〜（5）中，（X）为硅氧烷键的生成基团; R1，R2，R4分别为选自氢原子，烷基，芳烷基，环烷基， 环烷基，芳基和具有烯键式不饱和键的基团; R3和R5分别为选自氢原子，烷基，芳烷基，环烷基，环烷基和芳基中的基团 并且R 1，R 2和R 4中的至少一个是具有烯属不饱和键的基团。

公开(公告)号：US08329774B2

公开(公告)日：2012-12-11

申请号：US12812808

申请日：2009-01-09

申请人： Sayaka Ooike ,  Hiroshi Suzuki ,  Akinori Kitamura

发明人： Sayaka Ooike ,  Hiroshi Suzuki ,  Akinori Kitamura

IPC分类号： C08J3/28 ,  C07F7/02 ,  C08G77/00 ,  B05D3/02

CPC分类号： C08G77/14 ,  C08G77/045 ,  C08L83/06

摘要： The object of the present invention is to provide an organosilicon compound having an oxetanyl group, which has a high proportion of an inorganic part in the structure, which, after production thereof, is stable with no gelling, and which has excellent storage stability when it is formed into a composition, and a production method thereof and a curable composition. The organosilicon compound is a compound having an oxetanyl group obtained by a method including a process in which a silicon compound A represented by the formula (1) and a silicon compound B having four siloxane bond-forming groups are subjected to hydrolysis and condensation at a ratio of 0.3 to 2.8 mol of silicon compound B based on 1 mol of silicon compound A. [In the formula, R0 is an organic group having an oxetanyl group, R1 is an alkyl group having 1 to 6 carbon atoms, an aralkyl group having 7 to 10 carbon atoms, an aryl group having 6 to 10 carbon atoms, or an organic group having an oxetanyl group, X is a hydrolyzable group, and n is 0 or 1.]

摘要翻译： 本发明的目的是提供一种具有氧杂环丁烷基的有机硅化合物，其结构中无机部分的比例高，其生产稳定而没有胶化，并且当其具有优异的储存稳定性 形成组合物及其制备方法和可固化组合物。 有机硅化合物是通过包括以下方法获得的具有氧杂环丁烷基的化合物，其中将由式（1）表示的硅化合物A和具有四个硅氧烷键形成基团的硅化合物B在其中进行水解和缩合 比例为0.3〜2.8摩尔的硅化合物B，基于1摩尔的硅化合物A. [式中，R 0为具有氧杂环丁烷基的有机基团，R 1为碳原子数1〜6的烷基，具有 碳原子数为7〜10，碳原子数6〜10的芳基或氧杂环丁烷基的有机基团，X为水解性基团，n为0或1。

公开(公告)号：US08168739B2

公开(公告)日：2012-05-01

申请号：US12741462

申请日：2008-11-13

申请人： Akinori Kitamura ,  Hiroshi Suzuki

发明人： Akinori Kitamura ,  Hiroshi Suzuki

IPC分类号： C08G77/04 ,  C08G77/12 ,  C08G77/20

CPC分类号： C08G77/20 ,  C08G77/045 ,  C08G77/12 ,  C08G77/18 ,  C08G77/80 ,  C09D183/04

摘要： The present invention has an object to provide a polysiloxane which is a liquid substance having low viscosity, is excellent in curing workability, and has excellent heat resistance in an obtained cured material, and to a production method of a cured material using the polysiloxane. Specifically disclosed is a polysiloxane which is obtained by hydrolysis and polycondensation of a silicon compound having three hydrolyzable groups, a silicon compound having two hydrolyzable groups and a silicon compound having one hydrolyzable group, and is characterized by containing a hydrosilylatable carbon-carbon unsaturated group, a hydrosilyl group and an alkoxysilyl group, and having a number average molecular weight of 500 to 20,000.

摘要翻译： 本发明的目的是提供一种聚硅氧烷，其是具有低粘度，固化加工性优异，并且在所得固化材料中具有优异的耐热性的液体物质，以及使用该聚硅氧烷的固化物的制造方法。 具体公开的是通过具有三个可水解基团的硅化合物，具有两个可水解基团的硅化合物和具有一个可水解基团的硅化合物的水解和缩聚获得的聚硅氧烷，其特征在于含有可氢化可硅烷化的碳 - 碳不饱和基团， 氢化甲硅烷基和烷氧基甲硅烷基，数均分子量为500〜20000。

公开(公告)号：US07883631B2

公开(公告)日：2011-02-08

申请号：US11682527

申请日：2007-03-06

申请人： Akinori Kitamura ,  Masanobu Honda ,  Nozomi Hirai

发明人： Akinori Kitamura ,  Masanobu Honda ,  Nozomi Hirai

IPC分类号： B44C1/22

CPC分类号： H01L21/31116

摘要： A plasma etching method includes the step of performing a plasma etching on a silicon-containing dielectric layer formed on a substrate to be processed by using a plasma, while using an organic layer as a mask. In addition, the plasma is generated from a processing gas at least including a first fluorocarbon gas which is an unsaturated gas; a second fluorocarbon gas which is an aliphatic saturated gas expressed by CmF2m+2 (m=5, 6); and an oxygen gas. Further, a computer-readable storage medium for storing therein a computer executable control program is provided where the control program, when executed, controls a plasma etching apparatus to perform the above plasma etching method.

摘要翻译： 等离子体蚀刻方法包括在使用有机层作为掩模的同时，通过使用等离子体对形成在待加工基板上的含硅电介质层进行等离子体蚀刻的步骤。 此外，等离子体是从至少包括作为不饱和气体的第一碳氟化合物气体的处理气体产生的; 第二碳氟化合物气体，其为由CmF 2 m + 2（m = 5,6）表示的脂肪族饱和气体。 和氧气。 此外，提供了一种用于在其中存储计算机可执行控制程序的计算机可读存储介质，其中控制程序在执行时控制等离子体蚀刻装置以执行上述等离子体蚀刻方法。

公开(公告)号：US20050101140A1

公开(公告)日：2005-05-12

申请号：US10949366

申请日：2004-09-27

申请人： Tomoyo Yamaguchi ,  Kiwamu Fujimoto ,  Akinori Kitamura ,  Jae Jeong ,  Takashi Fuse ,  Machiko Obi ,  Nobuhiro Wada

发明人： Tomoyo Yamaguchi ,  Kiwamu Fujimoto ,  Akinori Kitamura ,  Jae Jeong ,  Takashi Fuse ,  Machiko Obi ,  Nobuhiro Wada

IPC分类号： H05H1/46 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/461

CPC分类号： H01L21/31116 ,  H01J37/32165

摘要： A plasma etching method includes the steps of exciting an etching gas introduced in a processing vessel into a plasma, the etching gas including 1,1,1,4,4,5,5,5-octafluoro-2-pentyne, and carrying out a plasma etching on a film on a target object accommodated in the processing vessel via opening patterns of a resist mask on the film. Therefore, it is possible to perform plasma etching having a high selectivity to resist and/or suppressing the etch stop.

摘要翻译： 等离子体蚀刻方法包括以下步骤：将在处理容器中引入的蚀刻气体激发成等离子体，蚀刻气体包括1,1,1,4,4,5,5,5-八氟-2-戊炔，并进行 通过膜上的抗蚀剂掩模的开口图案对容纳在处理容器中的目标物体上的膜上的等离子体蚀刻。 因此，可以进行具有高抗蚀性和/或抑制蚀刻停止的高选择性的等离子体蚀刻。

公开(公告)号：US20110071255A1

公开(公告)日：2011-03-24

申请号：US12989331

申请日：2009-04-14

申请人： Sayaka Ooike ,  Akinori Kitamura ,  Hiroshi Suzuki

发明人： Sayaka Ooike ,  Akinori Kitamura ,  Hiroshi Suzuki

IPC分类号： C09D183/07 ,  C08G77/20

CPC分类号： C08G77/14 ,  C08G77/18 ,  C08G77/20 ,  C09D183/04

摘要： The present curable composition comprises an organosilicon compound produced by hydrolysis copolycondensation of (A) a silicon compound R0Si(R1)nX13-n [wherein R0 represents a (meth)acryloyl group; and X1 represents a hydrolyzable group] and (B) a silicon compound SiY14 [wherein Y1 represents a siloxane-bond forming group] under an alkaline condition at a ratio of compound (A) to compound (B) of 1:(0.3 to 1.8) by mol. The present process for producing an organosilicon compound comprises a reaction process of conducting alcohol exchange reaction of a silicon compound. SiY24 [wherein Y2 represents a siloxane-bond forming group] in 1-propanol to produce a composition; and a condensation process of adding a silicon compound R0Si(R1)nX23-n [wherein R0 represents a (meth)acryloyl group; and X2 represents a hydrolyzable group] to the composition to perform the hydrolysis copolycondensation of the silicon compounds under alkaline conditions.

摘要翻译： 本固化性组合物包含通过（A）硅化合物R0Si（R1）nX13-n [其中R0表示（甲基）丙烯酰基的水解共缩聚而制备的有机硅化合物; X表示可水解基团]和（B）在化合物（A）与化合物（B）的比例为1：（0.3〜1.8）的条件下，在碱性条件下，硅化合物SiY14 [其中Y1表示硅氧烷键形成基团] ）。 本发明的有机硅化合物的制造方法包括进行硅化合物的醇交换反应的反应方法。 SiY24 [其中Y2表示硅氧烷键形成基]在1-丙醇中以产生组合物; 和加入硅化合物R0Si（R1）nX23-n [其中R0表示（甲基）丙烯酰基的缩合方法; X2表示水解性基团]，在碱性条件下进行硅化合物的水解共缩聚。

公开(公告)号：US07842190B2

公开(公告)日：2010-11-30

申请号：US11691804

申请日：2007-03-27

申请人： Akinori Kitamura

发明人： Akinori Kitamura

IPC分类号： C03C15/00

CPC分类号： H01L21/31138 ,  H01J37/32091 ,  H01L21/76802

摘要： A plasma etching method includes the step of etching a lower organic material film by using an upper organic material film and an intermediate layer as a mask in a processing chamber of a plasma etching apparatus, while using an etching gas made up of a gaseous mixture including an O2 gas and a carbon-containing compound gas which has a carbon atom in a molecule, to thereby transfer a pattern of the intermediate layer to the lower organic material film. A ratio of a flow rate of the carbon-containing compound gas to a total flow rate of the etching gas ranges from about 40 to 99%.

摘要翻译： 等离子体蚀刻方法包括在等离子体蚀刻装置的处理室中使用上部有机材料膜和中间层作为掩模蚀刻下部有机材料膜的步骤，同时使用由气体混合物构成的蚀刻气体，包括 O 2气体和分子中具有碳原子的含碳化合物气体，从而将中间层的图案转印到下部有机材料膜。 含碳化合物气体的流量与蚀刻气体的总流量的比率为约40〜99％。

公开(公告)号：US20100280210A1

公开(公告)日：2010-11-04

申请号：US12741462

申请日：2008-11-13

申请人： Akinori Kitamura ,  Hiroshi Suzuki

发明人： Akinori Kitamura ,  Hiroshi Suzuki

IPC分类号： C08G77/04

CPC分类号： C08G77/20 ,  C08G77/045 ,  C08G77/12 ,  C08G77/18 ,  C08G77/80 ,  C09D183/04

摘要： The present invention has an object to provide a polysiloxane which is a liquid substance having low viscosity, is excellent in curing workability, and has excellent heat resistance in an obtained cured material, and to a production method of a cured material using the polysiloxane. Specifically disclosed is a polysiloxane which is obtained by hydrolysis and polycondensation of a silicon compound having three hydrolyzable groups, a silicon compound having two hydrolyzable groups and a silicon compound having one hydrolyzable group, and is characterized by containing a hydrosilylatable carbon-carbon unsaturated group, a hydrosilyl group and an alkoxysilyl group, and having a number average molecular weight of 500 to 20,000.

摘要翻译： 本发明的目的是提供一种聚硅氧烷，其是具有低粘度，固化加工性优异，并且在所得固化材料中具有优异的耐热性的液体物质，以及使用该聚硅氧烷的固化物的制造方法。 具体公开的是通过具有三个可水解基团的硅化合物，具有两个可水解基团的硅化合物和具有一个可水解基团的硅化合物的水解和缩聚获得的聚硅氧烷，其特征在于含有可氢化可硅烷化的碳 - 碳不饱和基团， 氢化甲硅烷基和烷氧基甲硅烷基，数均分子量为500〜20000。