公开(公告)号：US09045819B2

公开(公告)日：2015-06-02

申请号：US13132023

申请日：2009-12-10

申请人： Kazuyoshi Honda ,  Yasuharu Shinokawa ,  Hiromasa Yagi ,  Satoshi Shibutani ,  Sadayuki Okazaki ,  Yuko Ogawa ,  Daisuke Suetsugu

发明人： Kazuyoshi Honda ,  Yasuharu Shinokawa ,  Hiromasa Yagi ,  Satoshi Shibutani ,  Sadayuki Okazaki ,  Yuko Ogawa ,  Daisuke Suetsugu

IPC分类号： C23C14/24 ,  C23C14/04 ,  C23C14/14 ,  C23C14/54 ,  C23C14/56

CPC分类号： C23C14/042 ,  C23C14/14 ,  C23C14/24 ,  C23C14/243 ,  C23C14/541 ,  C23C14/562

摘要： Deterioration of the degree of vacuum in a vacuum chamber is prevented while securing adequate cooling performance by gas cooling. A substrate 21 is provided in a vacuum, and the cooling body 1 is provided close to a film non-formation surface of the substrate 21. A thin film is formed by depositing a film forming material on a film formation surface of the substrate 21 while introducing a cooling gas into between the substrate 21 and the cooling body 1. At this time, a gas which reacts with the film forming material is introduced as the cooling gas.

摘要翻译： 在通过气体冷却确保足够的冷却性能的同时防止真空室中的真空度恶化。 在真空中设置基板21，将冷却体1设置在基板21的膜非形成面附近。通过在基板21的成膜面上沉积成膜材料而形成薄膜，同时 将冷却气体引入到基板21和冷却体1之间。此时，引入与成膜材料反应的气体作为冷却气体。

公开(公告)号：US20110281029A1

公开(公告)日：2011-11-17

申请号：US13132023

申请日：2009-12-10

申请人： Kazuyoshi Honda ,  Yasuharu Shinokawa ,  Hiromasa Yagi ,  Satoshi Shibutani ,  Sadayuki Okazaki ,  Yuko Ogawa ,  Daisuke Suetsugu

发明人： Kazuyoshi Honda ,  Yasuharu Shinokawa ,  Hiromasa Yagi ,  Satoshi Shibutani ,  Sadayuki Okazaki ,  Yuko Ogawa ,  Daisuke Suetsugu

IPC分类号： C23C16/44 ,  C23C16/04

CPC分类号： C23C14/042 ,  C23C14/14 ,  C23C14/24 ,  C23C14/243 ,  C23C14/541 ,  C23C14/562

摘要： Deterioration of the degree of vacuum in a vacuum chamber is prevented while securing adequate cooling performance by gas cooling. A substrate 21 is provided in a vacuum, and the cooling body 1 is provided close to a film non-formation surface of the substrate 21. A thin film is formed by depositing a film forming material on a film formation surface of the substrate 21 while introducing a cooling gas into between the substrate 21 and the cooling body 1. At this time, a gas which reacts with the film forming material is introduced as the cooling gas.

摘要翻译： 在通过气体冷却确保足够的冷却性能的同时防止真空室中的真空度恶化。 在真空中设置基板21，将冷却体1设置在基板21的膜非形成面附近。通过在基板21的成膜面上沉积成膜材料而形成薄膜，同时 将冷却气体引入到基板21和冷却体1之间。此时，引入与成膜材料反应的气体作为冷却气体。

公开(公告)号：US20120301615A1

公开(公告)日：2012-11-29

申请号：US13575244

申请日：2011-01-26

申请人： Kazuyoshi Honda ,  Satoshi Shibutani ,  Yasuharu Shinokawa ,  Sadayuki Okazaki ,  Noriyuki Uchida ,  Noriaki Amo

发明人： Kazuyoshi Honda ,  Satoshi Shibutani ,  Yasuharu Shinokawa ,  Sadayuki Okazaki ,  Noriyuki Uchida ,  Noriaki Amo

IPC分类号： C23C16/458 ,  B65H20/02

CPC分类号： C23C14/30 ,  C23C14/541 ,  C23C14/562 ,  C23C14/564 ,  C23C16/466 ,  C23C16/545

摘要： A conveyance system 50A of a film-forming apparatus 20A includes a blowing roller 6 having a function of supplying a cooling gas toward a substrate 21. The blowing roller has the first shell 11 and the internal block 12. The first shell 11 has a plurality of first through holes 13 as a gas supply channel, and is rotatable in synchronization with the substrate 21. The internal block 12 is disposed inside the first shell 11. A manifold 14 is defined by the internal block 12 inside the first shell 11. The manifold 14 is formed so as to introduce the gas toward the plurality of first through holes 13 within the range of a holding angle. A clearance 15 facing the plurality of first through holes 13 outside the range of the holding angle is further formed inside the first shell 11. In the radial direction, the manifold 14 has a relatively large dimension, and the clearance 15 has a relatively small dimension.

摘要翻译： 薄膜形成装置20A的输送系统50A包括具有向基板21供给冷却气体的功能的送风辊6.该吹送辊具有第一壳体11和内部块12.第一壳体11具有多个 第一通孔13作为气体供应通道，并且可与基板21同步旋转。内部块12设置在第一壳体11的内部。歧管14由第一壳体11内的内部块12限定。 歧管14形成为在保持角度的范围内朝向多个第一通孔13引入气体。 另外在第一壳体11的内侧形成面向多个保持角范围的第一贯通孔13的间隙15.在径向方向上，歧管14的尺寸较大，间隙15的尺寸比较小 。

公开(公告)号：US09340865B2

公开(公告)日：2016-05-17

申请号：US13575244

申请日：2011-01-26

申请人： Kazuyoshi Honda ,  Satoshi Shibutani ,  Yasuharu Shinokawa ,  Sadayuki Okazaki ,  Noriyuki Uchida ,  Noriaki Amo

发明人： Kazuyoshi Honda ,  Satoshi Shibutani ,  Yasuharu Shinokawa ,  Sadayuki Okazaki ,  Noriyuki Uchida ,  Noriaki Amo

IPC分类号： C23C16/00 ,  C23C14/30 ,  C23C14/54 ,  C23C14/56

CPC分类号： C23C14/30 ,  C23C14/541 ,  C23C14/562 ,  C23C14/564 ,  C23C16/466 ,  C23C16/545

摘要： A conveyance system 50A of a film-forming apparatus 20A includes a blowing roller 6 having a function of supplying a cooling gas toward a substrate 21. The blowing roller has the first shell 11 and the internal block 12. The first shell 11 has a plurality of first through holes 13 as a gas supply channel, and is rotatable in synchronization with the substrate 21. The internal block 12 is disposed inside the first shell 11. A manifold 14 is defined by the internal block 12 inside the first shell 11. The manifold 14 is formed so as to introduce the gas toward the plurality of first through holes 13 within the range of a holding angle. A clearance 15 facing the plurality of first through holes 13 outside the range of the holding angle is further formed inside the first shell 11. In the radial direction, the manifold 14 has a relatively large dimension, and the clearance 15 has a relatively small dimension.

摘要翻译： 薄膜形成装置20A的输送系统50A包括具有向基板21供给冷却气体的功能的送风辊6.该吹送辊具有第一壳体11和内部块12.第一壳体11具有多个 第一通孔13作为气体供应通道，并且可与基板21同步旋转。内部块12设置在第一壳体11的内部。歧管14由第一壳体11内的内部块12限定。 歧管14形成为在保持角度的范围内朝向多个第一通孔13引入气体。 另外在第一壳体11的内侧形成面向多个保持角范围的第一贯通孔13的间隙15.在径向方向上，歧管14的尺寸较大，间隙15的尺寸比较小 。

公开(公告)号：US20110268893A1

公开(公告)日：2011-11-03

申请号：US13143284

申请日：2010-04-02

申请人： Kazuyoshi Honda ,  Tomofumi Yanagi ,  Yasuharu Shinokawa ,  Sadayuki Okazaki

发明人： Kazuyoshi Honda ,  Tomofumi Yanagi ,  Yasuharu Shinokawa ,  Sadayuki Okazaki

IPC分类号： C23C14/30

CPC分类号： C23C14/24 ,  C23C14/243 ,  C23C14/246 ,  C23C14/30 ,  C23C14/562 ,  F27B14/02 ,  F27B14/04

摘要： The present invention provides a thin film manufacturing device capable of preventing crack damage of a crucible by, while maintaining a melt state of a film formation material in the crucible, tilting the crucible to discharge substantially the entire amount of film formation material from the crucible. The thin film manufacturing device of the present invention includes: a film forming source 9 including a storage portion having an opening at an upper portion thereof to hold a film formation material 3; an electron gun 5 configured to irradiate the film formation material in the storage portion with an electron beam 6 to melt the film formation material, generate a melt, and evaporate the film formation material; a tilt mechanism 8 configured to tilt the film forming source 9 from a film formation posture to an inclined posture to discharge the melt from the storage portion, the inclined posture being a posture by which the storage portion is not able to hold the melt; a vacuum chamber 22 in which the film forming source and the tilt mechanism are accommodated and a thin film is formed on a substrate; and a vacuum pump 34 configured to discharge air in the vacuum chamber. A trajectory of tilting of the film forming source 9 or a trajectory of the electron beam 6 is controlled such that the melt in the storage portion is continuously irradiated with the electron beam 6 while the film forming source 9 is tilted from the film formation posture to the inclined posture.

摘要翻译： 本发明提供一种薄膜制造装置，其能够通过在保持坩埚内的成膜材料的熔融状态的同时，使坩埚倾斜，从坩埚中大量排出成膜材料，能够防止坩埚的龟裂损伤。 本发明的薄膜制造装置包括：成膜源9，其具有在其上部具有保持成膜材料3的开口部的收容部; 电子枪5，被配置为用电子束6照射存储部分中的成膜材料，以熔化成膜材料，产生熔体并使成膜材料蒸发; 倾斜机构8，其被配置为将成膜源9从成膜姿势倾斜到倾斜姿势，以将熔体从储存部排出，倾斜姿势是储存部不能保持熔体的姿势; 在其上容纳有成膜源和倾斜机构的真空室22，在基板上形成薄膜; 以及构造成将真空室内的空气排出的真空泵34。 控制成膜源9的倾斜轨迹或电子束6的轨迹，使得成膜源9从成膜姿势倾斜而使储存部分中的熔体连续地被电子束6照射， 倾斜的姿势。

公开(公告)号：US08668895B2

公开(公告)日：2014-03-11

申请号：US12440531

申请日：2008-06-24

申请人： Yuma Kamiyama ,  Kazuyoshi Honda ,  Yasuharu Shinokawa ,  Hiromasa Yagi ,  Tomofumi Yanagi ,  Kunihiko Bessho

发明人： Yuma Kamiyama ,  Kazuyoshi Honda ,  Yasuharu Shinokawa ,  Hiromasa Yagi ,  Tomofumi Yanagi ,  Kunihiko Bessho

IPC分类号： C01B33/037

CPC分类号： C01B33/037

摘要： In a purifying method for metal grade silicon, metal grade silicon with a silicon concentration not less than 98 wt % and not more than 99.9 wt % is prepared. The metal grade silicon contains aluminum not less than 1000 ppm and not more than 10000 ppm by weight. The metal grade silicon is heated at a temperature not less than 1500° C. and not more than 1600° C. in an inert atmosphere under pressure not less than 100 Pa and not more than 1000 Pa, and maintained at the temperature in the atmosphere for a predetermined period.

摘要翻译： 在金属级硅的纯化方法中，制备硅浓度不小于98重量％且不大于99.9重量％的金属级硅。 金属级硅含有不小于1000ppm且不大于10000ppm重量的铝。 金属级硅在压力不小于100Pa且不大于1000Pa的惰性气氛中在不低于1500℃且不高于1600℃的温度下加热，并保持在大气中的温度 预定时间。

公开(公告)号：US20090280049A1

公开(公告)日：2009-11-12

申请号：US12440531

申请日：2008-06-24

申请人： Yuma Kamiyama ,  Kazuyoshi Honda ,  Yasuharu Shinokawa ,  Hiromasa Yagi ,  Tomofumi Yanagi ,  Kunihiko Bessho

发明人： Yuma Kamiyama ,  Kazuyoshi Honda ,  Yasuharu Shinokawa ,  Hiromasa Yagi ,  Tomofumi Yanagi ,  Kunihiko Bessho

IPC分类号： C01B33/037

CPC分类号： C01B33/037

摘要： In a purifying method for metal grade silicon, metal grade silicon with a silicon concentration not less than 98 wt % and not more than 99.9 wt % is prepared. The metal grade silicon contains aluminum not less than 1000 ppm and not more than 10000 ppm by weight. The metal grade silicon is heated at a temperature not less than 1500° C. and not more than 1600° C. in an inert atmosphere under pressure not less than 100 Pa and not more than 1000 Pa, and maintained at the temperature in the atmosphere for a predetermined period.

摘要翻译： 在金属级硅的纯化方法中，制备硅浓度不小于98重量％且不大于99.9重量％的金属级硅。 金属级硅含有不小于1000ppm且不大于10000ppm重量的铝。 金属级硅在压力不小于100Pa且不大于1000Pa的惰性气氛中在不低于1500℃且不高于1600℃的温度下加热，并保持在大气中的温度 预定时间。

公开(公告)号：US20120009349A1

公开(公告)日：2012-01-12

申请号：US13257514

申请日：2010-04-14

申请人： Yasuharu Shinokawa ,  Satoshi Shibutani ,  Kazuyoshi Honda ,  Takashi Shimada ,  Yuma Kamiyama ,  Masahiro Yamamoto

发明人： Yasuharu Shinokawa ,  Satoshi Shibutani ,  Kazuyoshi Honda ,  Takashi Shimada ,  Yuma Kamiyama ,  Masahiro Yamamoto

IPC分类号： B05D3/00 ,  B05D1/00 ,  C23C14/00

CPC分类号： C23C14/562 ,  C23C14/541

摘要： In a film forming method using gas cooling, a decrease in a film formation rate and an excessive load on a vacuum pump due to gas introduction are avoided while achieving an adequate cooling effect. A thin film forming device of the present invention includes: a cooling body 10 having a cooling surface 10S located near a rear surface of a substrate 7 in a thin film forming region 9; and a gas introducing unit configured to introduce a gas to between the cooling surface 10S and the rear surface of the substrate 7. In a width-direction cross section of the substrate, a center portion of the cooling surface is shaped to project toward the rear surface of the substrate 7 as compared to both end portions of the cooling surface. In the width-direction cross section of the substrate, the cooling surface preferably has a bilaterally-symmetric shape and more preferably has a shape represented by a catenary curve.

摘要翻译： 在使用气体冷却的成膜方法中，避免了由于气体导入而导致的真空泵的成膜速度的降低和真空泵的过大的负荷，同时达到充分的冷却效果。 本发明的薄膜形成装置包括：在薄膜形成区域9中具有位于基板7的后表面附近的冷却表面10S的冷却体10; 以及气体引入单元，其被配置为将气体引入到冷却表面10S和基板7的后表面之间。在基板的宽度方向横截面中，冷却表面的中心部分成形为向后突出 与冷却表面的两个端部相比，衬底7的表面。 在基板的宽度方向截面中，冷却面优选具有双向对称的形状，更优选具有由悬链曲线表示的形状。

公开(公告)号：US20130330472A1

公开(公告)日：2013-12-12

申请号：US14000551

申请日：2012-04-25

申请人： Kazuyoshi Honda ,  Sadayuki Okazaki ,  Noriaki Amo ,  Noriyuki Uchida ,  Daisuke Suetsugu

发明人： Kazuyoshi Honda ,  Sadayuki Okazaki ,  Noriaki Amo ,  Noriyuki Uchida ,  Daisuke Suetsugu

IPC分类号： C23C16/458 ,  B65G13/00

CPC分类号： C23C16/458 ,  B65G13/00 ,  C23C14/50 ,  C23C14/541 ,  C23C14/562 ,  C23C16/4581 ,  C23C16/463 ,  C23C16/466 ,  C23C16/545

摘要： A substrate-conveying roller 6A is configured to convey a substrate under vacuum, and includes a first shell 11, an internal block 12, and a shaft 10. The first shell 11 has a cylindrical outer circumferential surface for supporting the substrate, and can rotate in synchronization with the substrate. The internal block 12 is disposed inside the first shell 11, and is blocked from rotating in synchronization with the substrate. The shaft 10 extends through, and supports the internal block 12. A clearance 15 is formed between the inner circumferential surface of the first shell 11 and the internal block 12. A gas is introduced into the clearance 15 from the internal block 12 toward the inner circumferential surface of the first shell 11.

摘要翻译： 基板输送辊6A构造成在真空下输送基板，并且包括第一壳体11，内部块12和轴10.第一壳体11具有用于支撑基板的圆柱形外周面，并且可以旋转 与衬底同步。 内部块12设置在第一壳体11的内部，并与基板同步地阻止旋转。 轴10延伸穿过并支撑内部块12.在第一壳体11的内周表面和内部块12之间形成间隙15.气体从内部块12向内部空间15被引入到间隙15中 第一壳体11的圆周表面。

公开(公告)号：US20090311602A1

公开(公告)日：2009-12-17

申请号：US12373021

申请日：2008-01-31

申请人： Satoshi Shibutani ,  Yuko Ogawa ,  Kazuyoshi Honda

发明人： Satoshi Shibutani ,  Yuko Ogawa ,  Kazuyoshi Honda

IPC分类号： H01M4/48 ,  B05D5/12 ,  H01M6/00

CPC分类号： H01M4/667 ,  H01M4/0421 ,  H01M4/131 ,  H01M4/134 ,  H01M4/1391 ,  H01M4/1395 ,  H01M4/525 ,  H01M10/0525 ,  Y10T29/49115

摘要： To accelerate a film formation rate in forming a negative electrode active material film by vapor deposition using an evaporation source containing Si as a principal component, and to provide an electrode for lithium batteries which is superior in productivity, and keeps the charge and discharge capacity at high level are contemplated. The method of manufacturing an electrode for lithium batteries of the present invention includes the steps of: providing an evaporation source containing Si and Fe to give a molar ratio of Fe/(Si+Fe) being no less than 0.0005 and no greater than 0.15; and vapor deposition by melting the evaporation source and permitting evaporation to allow for vapor deposition on a collector directly or through an underlying layer. The electrode for lithium batteries of the present invention includes a collector, and a negative electrode active material film which includes SiFeyOx (wherein, 0

摘要翻译： 为了通过使用含有Si作为主要成分的蒸发源通过气相沉积来加速形成负极活性物质膜的成膜速度，并提供生产率优异的锂电池用电极，并且将充放电容量保持在 预期高水平。 制造本发明的锂电池用电极的方法包括以下步骤：提供含有Si和Fe的蒸发源，使Fe /（Si + Fe）的摩尔比不小于0.0005且不大于0.15; 并通过熔化蒸发源并允许蒸发以允许在集电体上直接或通过下层进行气相沉积而蒸镀。 本发明的锂电池用电极包括集电体和负极活性物质膜，其包含SiFeyOx（其中，0