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公开(公告)号：US20090011341A1
公开(公告)日：2009-01-08
申请号：US12205967
申请日：2008-09-08
IPC分类号： G03F1/00
摘要： To provide a reflective mask blank for EUV lithography having an absorber layer, which presents a low reflectance to a light in the wavelength ranges of EUV light and pattern inspection light, and which is easily controlled to have desired film composition and film thickness.A reflective mask blank for EUV lithography, comprising a substrate, and a reflective layer for reflecting EUV light and an absorber layer for absorbing EUV light formed in this order on the substrate, wherein the absorber layer contains tantalum (Ta), boron (B), silicon (Si) and nitrogen (N), and in the absorber layer, the B content is at least 1 at % and less than 5 at %, the Si content is from 1 to 25 at %, and the compositional ratio of Ta to N (Ta:N) is from 8:1 to 1:1.
摘要翻译： 为了提供具有吸收层的EUV光刻用的反射掩模板，其对EUV光和图案检查光的波长范围内的光呈现低反射率，并且易于控制以具有所需的膜组成和膜厚度。 一种用于EUV光刻的反射掩模板，包括基板和用于反射EUV光的反射层和用于吸收在基板上依次形成的EUV光的吸收层，其中吸收层包含钽（Ta），硼（B） ，硅（Si）和氮（N），并且在吸收层中，B含量为至少1原子％且小于5原子％，Si含量为1至25原子％，Ta的组成比 至N（Ta：N）为8:1至1:1。
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公开(公告)号：US07906259B2
公开(公告)日：2011-03-15
申请号：US12205967
申请日：2008-09-08
IPC分类号： G03F1/00
摘要： To provide a reflective mask blank for EUV lithography having an absorber layer, which presents a low reflectance to a light in the wavelength ranges of EUV light and pattern inspection light, and which is easily controlled to have desired film composition and film thickness. A reflective mask blank for EUV lithography, comprising a substrate, and a reflective layer for reflecting EUV light and an absorber layer for absorbing EUV light formed in this order on the substrate, wherein the absorber layer contains tantalum (Ta), boron (B), silicon (Si) and nitrogen (N), and in the absorber layer, the B content is at least 1 at % and less than 5 at %, the Si content is from 1 to 25 at %, and the compositional ratio of Ta to N (Ta:N) is from 8:1 to 1:1.
摘要翻译： 为了提供具有吸收层的EUV光刻用的反射掩模板，其对EUV光和图案检查光的波长范围内的光呈现低反射率，并且易于控制以具有所需的膜组成和膜厚度。 一种用于EUV光刻的反射掩模板，包括基板和用于反射EUV光的反射层和用于吸收在基板上依次形成的EUV光的吸收层，其中吸收层包含钽（Ta），硼（B） ，硅（Si）和氮（N），并且在吸收层中，B含量为至少1原子％且小于5原子％，Si含量为1至25原子％，Ta的组成比 至N（Ta：N）为8:1至1:1。
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3.发明授权Reflective mask blank for EUV lithography and substrate with functional film for the same 有权用于EUV光刻的反光掩模板和具有功能膜的基板公开(公告)号：US07833682B2
公开(公告)日：2010-11-16
申请号：US12198912
申请日：2008-08-27
摘要： To provide an EUV mask blank of which the decrease in the reflectance during EUV exposure is suppressed, and a substrate with a functional film to be used for production of such an EUV mask blank.A substrate with a reflective layer for EUV lithography, comprising a substrate, and a reflective layer for reflecting EUV light and a protective layer for protecting the reflective layer formed in this order on the substrate, wherein the protective layer contains ruthenium (Ru) and at least one element selected from the group consisting of boron (B) and zirconium (Zr); and in the protective layer, the Ru content is from 70 at % to 95 at % and the total content of B and Zr is from 5 at % to 30 at %.
摘要翻译： 提供抑制EUV曝光期间反射率降低的EUV掩模空白，以及用于制造这种EUV掩模空白的具有功能膜的基板。 具有用于EUV光刻的反射层的衬底，包括衬底和用于反射EUV光的反射层和用于保护在衬底上依次形成的反射层的保护层，其中保护层包含钌（Ru）并且在 选自硼（B）和锆（Zr）的至少一种元素; 并且在保护层中，Ru含量为70原子％至95原子％，B和Zr的总含量为5原子％至30原子％。
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4.发明申请REFLECTIVE MASK BLANK FOR EUV LITHOGRAPHY AND SUBSTRATE WITH FUNCTIONAL FILM FOR THE SAME 有权用于EUV光刻的反射掩膜和具有相同功能膜的基板公开(公告)号：US20080318140A1
公开(公告)日：2008-12-25
申请号：US12198912
申请日：2008-08-27
IPC分类号： G03F1/00
摘要： To provide an EUV mask blank of which the decrease in the reflectance during EUV exposure is suppressed, and a substrate with a functional film to be used for production of such an EUV mask blank.A substrate with a reflective layer for EUV lithography, comprising a substrate, and a reflective layer for reflecting EUV light and a protective layer for protecting the reflective layer formed in this order on the substrate, wherein the protective layer contains ruthenium (Ru) and at least one element selected from the group consisting of boron (B) and zirconium (Zr); and in the protective layer, the Ru content is from 70 at % to 95 at % and the total content of B and Zr is from 5 at % to 30 at %.
摘要翻译： 提供抑制EUV曝光期间反射率降低的EUV掩模空白，以及用于制造这种EUV掩模空白的具有功能膜的基板。 具有用于EUV光刻的反射层的衬底，包括衬底和用于反射EUV光的反射层和用于保护在衬底上依次形成的反射层的保护层，其中保护层包含钌（Ru）并且在 选自硼（B）和锆（Zr）的至少一种元素; 并且在保护层中，Ru含量为70原子％至95原子％，B和Zr的总含量为5原子％至30原子％。
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公开(公告)号：US08088538B2
公开(公告)日：2012-01-03
申请号：US12578648
申请日：2009-10-14
摘要： Provision of a reflective mask blank for EUV lithography having an absorber layer which has a low reflectance in the wavelength regions of EUV light and pattern inspection light and whose film composition and film thickness are easily controllable to desired ones.A reflective mask blank for EUV lithography, which comprises a substrate, and a reflective layer to reflect EUV light and an absorber layer to absorb EUV light, formed in this order on the substrate, wherein the absorber layer contains tantalum (Ta), boron (B) and silicon (Si), and in the absorber layer, the content of B is at least 1 at. % and less than 5 at. % and the content of Si is from 1 to 25 at. %, and wherein the absorber layer contains no nitrogen (N) or at most 10 at. % of N.
摘要翻译： 提供用于EUV光刻的反射掩模板，其具有在EUV光和图案检查光的波长区域中具有低反射率的吸收层，并且其膜组成和膜厚度可以容易地控制到期望的。 一种用于EUV光刻的反射掩模板，其包括基板，以及反射层，用于反射EUV光和吸收层，以吸收在基板上依次形成的EUV光，其中吸收层包含钽（Ta），硼（ B）和硅（Si），并且在吸收层中，B的含量至少为1个。 ％和小于5在。 ％，Si的含量为1〜25at。 ％，并且其中吸收层不含氮（N）或至多10原子。 ％的N.
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6.发明申请REFLECTIVE MASK BLANK FOR EUV LITHOGRAPHY AND SUBSTRATE WITH A CONDUCTIVE FILM FOR THE MASK BLANK 有权用于EUV光刻的反射掩模层和带有导电膜的掩模公开(公告)号：US20070160874A1
公开(公告)日：2007-07-12
申请号：US11566883
申请日：2006-12-05
IPC分类号： B32B9/04
CPC分类号： G03F1/24 , B82Y10/00 , B82Y40/00 , G03F1/38 , G21K2201/067 , Y10T428/31616
摘要： To provide a substrate with a conductive film for an EUV mask blank having an increased surface hardness, and a substrate with a reflective multilayer film and an EUV mask blank using such a substrate with a conductive film. A substrate with a conductive film to be used for production of a reflective mask blank for EUV lithography, characterized in that the chief material of the conductive film is at least one member selected from the group consisting of Cr, Ti, Zr, Nb, Ni and V, and the conductive film contains B (boron) at an average concentration of from 1 to 70 at %.
摘要翻译： 为了提供具有增加表面硬度的EUV掩模坯料用导电膜的基板，以及使用这种具有导电膜的基板的具有反射多层膜的基板和EUV掩模坯料。 一种具有用于生产用于EUV光刻的反射掩模板的导电膜的基板，其特征在于，导电膜的主要材料是选自Cr，Ti，Zr，Nb，Ni中的至少一种 和V，导电膜含有平均浓度为1-70原子％的B（硼）。
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7.发明授权Reflective mask blank for EUV lithography and substrate with a conductive film for the mask blank 有权用于EUV光刻的反射掩模板和用于掩模板的导电膜的基板公开(公告)号：US07736821B2
公开(公告)日：2010-06-15
申请号：US11566883
申请日：2006-12-05
IPC分类号： G03F1/00
CPC分类号： G03F1/24 , B82Y10/00 , B82Y40/00 , G03F1/38 , G21K2201/067 , Y10T428/31616
摘要： To provide a substrate with a conductive film for an EUV mask blank having an increased surface hardness, and a substrate with a reflective multilayer film and an EUV mask blank using such a substrate with a conductive film.A substrate with a conductive film to be used for production of a reflective mask blank for EUV lithography, characterized in that the chief material of the conductive film is at least one member selected from the group consisting of Cr, Ti, Zr, Nb, Ni and V, and the conductive film contains B (boron) at an average concentration of from 1 to 70 at %.
摘要翻译： 为了提供具有增加表面硬度的EUV掩模坯料用导电膜的基板，以及使用这种具有导电膜的基板的具有反射多层膜的基板和EUV掩模坯料。 一种具有用于生产用于EUV光刻的反射掩模板的导电膜的基板，其特征在于，导电膜的主要材料是选自Cr，Ti，Zr，Nb，Ni中的至少一种 和V，导电膜含有平均浓度为1-70原子％的B（硼）。
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公开(公告)号：US08986910B2
公开(公告)日：2015-03-24
申请号：US13472002
申请日：2012-05-15
申请人： Masaki Mikami
发明人： Masaki Mikami
CPC分类号： G03F1/24 , B82Y10/00 , B82Y40/00 , G02B5/0891 , G03F7/70316 , G03F7/70958 , G03F7/70983 , G21K1/062
摘要： There are provided an EUV optical member, in which deterioration in the reflectivity due to oxidation of the Ru protective layer is prevented, a functional film-equipped substrate to be employed for production of the EUV optical member. A reflective layer-equipped substrate for EUV lithography comprising a substrate, and a reflective layer for reflecting EUV light and a protective layer for protecting the reflective layer, formed in this order on the substrate, wherein the reflective layer is a Mo/Si multilayer reflective film, the protective layer has a three-layer structure wherein a first layer made of a Ru layer or a Ru compound layer, a second layer made of a Mo layer and a third layer made of a Ru layer or a Ru compound layer are laminated in this order on the reflective layer.
摘要翻译： 提供了防止由于Ru保护层的氧化引起的反射率劣化的EUV光学部件，用于生产EUV光学部件的功能膜配备基板。 一种用于EUV光刻的反射层衬底，包括衬底，以及用于反射EUV光的反射层和用于保护反射层的保护层，其依次形成在衬底上，其中反射层是Mo / Si多层反射 膜，保护层具有三层结构，其中由Ru层或Ru化合物层制成的第一层，由Mo层制成的第二层和由Ru层或Ru化合物层制成的第三层层压 在这个顺序上反射层。
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9.发明申请REFLECTIVE LAYER-EQUIPPED SUBSTRATE FOR EUV LITHOGRAPHY, REFLECTIVE MASK BLANK FOR EUV LITHOGRAPHY, REFLECTIVE MASK FOR EUV LITHOGRAPHY, AND PROCESS FOR PRODUCTION OF THE REFLECTIVE LAYER-EQUIPPED SUBSTRATE 有权用于EUV光刻的反射层设备衬底，用于EUV光刻的反射掩膜，用于EUV光刻的反射掩模，以及用于生产反射层的衬底的工艺公开(公告)号：US20120231378A1
公开(公告)日：2012-09-13
申请号：US13478532
申请日：2012-05-23
CPC分类号： G03F1/24 , B82Y10/00 , B82Y40/00 , G02B5/0891 , G03F7/70316 , G03F7/70958 , G03F7/70983
摘要： Provided are an EUV mask blank in which deterioration in reflectivity due to oxidation of a Ru protective layer is prevented, a reflective layer-equipped substrate to be used for producing the EUV mask blank, and a process for producing the reflective layer-equipped substrate. A reflective layer-equipped substrate for EUV lithography comprising a substrate, and a reflective layer for reflecting EUV light and a protective layer for protecting the reflective layer, formed in this order on the substrate, wherein the reflective layer is a Mo/Si multilayer reflective film, the protective layer is a Ru layer or a Ru compound layer, and an intermediate layer containing from 0.5 to 25 at % of nitrogen and from 75 to 99.5 at % of Si is formed between the reflective layer and the protective layer.
摘要翻译： 提供了防止由于Ru保护层的氧化引起的反射率的劣化的EUV掩模坯料，用于制造EUV掩模坯料的反射层的衬底以及用于制造具有反射层的衬底的工艺。 一种用于EUV光刻的反射层衬底，包括衬底，以及用于反射EUV光的反射层和用于保护反射层的保护层，其依次形成在衬底上，其中反射层是Mo / Si多层反射 膜，保护层是Ru层或Ru化合物层，并且在反射层和保护层之间形成含有0.5至25原子％的氮和75至99.5原子％的Si的中间层。
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10.发明授权公开(公告)号：US08580465B2
公开(公告)日：2013-11-12
申请号：US13443108
申请日：2012-04-10
IPC分类号： G03F1/24
CPC分类号： G03F1/24 , B82Y10/00 , B82Y40/00 , G02B5/0891 , G03F7/70316 , G03F7/70958 , G03F7/70983
摘要： Provided are a multilayer mirror for EUVL in which deterioration in reflectivity due to oxidation of a Ru protective layer is prevented, and a process for its production. A multilayer mirror for EUV lithography comprising a substrate, and a reflective layer for reflecting EUV light and a protective layer for protecting the reflective layer, formed in this order on the substrate, wherein the reflective layer is a Mo/Si multilayer reflective film, the protective layer is a Ru layer or a Ru compound layer, and an intermediate layer containing from 0.5 to 25 at % of nitrogen and from 75 to 99.5 at % of Si is formed between the reflective layer and the protective layer.
摘要翻译： 提供一种用于EUVL的多层反射镜，其中防止了由Ru保护层的氧化引起的反射率的劣化，以及其制备方法。 一种用于EUV光刻的多层反射镜，其包括基板，以及用于反射EUV光的反射层和用于保护反射层的保护层，其依次形成在基板上，其中反射层为Mo / Si多层反射膜， 保护层是Ru层或Ru化合物层，并且在反射层和保护层之间形成含有0.5〜25原子％的氮和75〜99.5原子％的Si的中间层。
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