摘要:
The present invention discloses a thin film transistor (TFT) and fabrication method thereof for a liquid crystal display device. The thin film transistor includes a substrate; a buffer layer on the substrate; an amorphous silicon layer having a pure amorphous silicon area and doped amorphous silicon areas, the pure amorphous silicon area having vertical offsets in both sides thereof, the doped amorphous silicon areas having source and drain areas, the doped amorphous silicon areas being doped by a dopant, the source and drain areas positioned on both sides of the pure amorphous silicon area and etched to expose the vertical offsets; an oxidized layer on the pure amorphous silicon area; a polycrystalline silicon layer on the oxidized layer; a gate insulating layer on the polycrystalline silicon layer; a gate electrode on the gate insulating layer; an inter layer insulator having first and second contact holes, the inter layer insulator covering the amorphous silicon layer, the oxidized layer, the polycrystalline silicon layer, the gate insulating layer, and the gate electrode; and source and drain electrodes contacting the source areas through the first contact hole and the drain area through the second contact hole, respectively.
摘要:
The present invention discloses a thin film transistor (TFT) and fabrication method thereof for a liquid crystal display device. The thin film transistor includes a substrate; a buffer layer on the substrate; an amorphous silicon layer having a pure amorphous silicon area and doped amorphous silicon areas, the pure amorphous silicon area having vertical offsets in both sides thereof, the doped amorphous silicon areas having source and drain areas, the doped amorphous silicon areas being doped by a dopant, the source and drain areas positioned on both sides of the pure amorphous silicon area and etched to expose the vertical offsets; an oxidized layer on the pure amorphous silicon area; a polycrystalline silicon layer on the oxidized layer; a gate insulating layer on the polycrystalline silicon layer; a gate electrode on the gate insulating layer; an inter layer insulator having first and second contact holes, the inter layer insulator covering the amorphous silicon layer, the oxidized layer, the polycrystalline silicon layer, the gate insulating layer, and the gate electrode; and source and drain electrodes contacting the source areas through the first contact hole and the drain area through the second contact hole, respectively.
摘要:
In a DC-DC converting circuit, a charge pumping part receives an input voltage, a first clock and a second clock and outputs first and second voltages to first and second nodes, which are boosted by high voltages of the first and second clocks with respect to the input voltage. An output part is connected to the first and second nodes of the charge pumping part, and a level boosting part turns on or turns off the charge pumping part in response to the first and second clocks. The output part outputs the first and second voltages through an output terminal during a high period of the first clock and during a high period of the second clock, respectively. Thus, an output voltage having a voltage level corresponding to two times that of the input voltage may be output from the output terminal while the first and second clocks are provided.
摘要:
A level shifter includes; a level conversion unit which receives a first input signal and a second input signal, wherein the second input signal is an inversion of the first input signal, and generates a first output signal having substantially a same phase of the first input signal and a voltage which is higher than the first input signal and a second output signal having substantially a same phase as the first input signal and a voltage which is lower than the first input signal; and wherein the level shifter further includes an amplifying unit which receives the first and second output signals and generates a third output signal having substantially a same phase as the first input signal and an amplitude which is greater than the first input signal.
摘要:
In a DC-DC converting circuit, a charge pumping part receives an input voltage, a first clock and a second clock and outputs first and second voltages to first and second nodes, which are boosted by high voltages of the first and second clocks with respect to the input voltage. An output part is connected to the first and second nodes of the charge pumping part, and a level boosting part turns on or turns off the charge pumping part in response to the first and second clocks. The output part outputs the first and second voltages through an output terminal during a high period of the first clock and during a high period of the second clock, respectively. Thus, an output voltage having a voltage level corresponding to two times that of the input voltage may be output from the output terminal while the first and second clocks are provided.
摘要:
An amplifier includes a biasing section, first and second differential amplifying sections and an output section. The biasing section outputs first and second bias currents based on first and second power source voltages. The first differential amplifying section outputs a first amplified voltage based on the first bias current. The second differential amplifying section outputs a second amplified voltage based on the second bias current. The output section outputs the second power source voltage based on the first amplified voltage and the first power source voltage, and outputs the first power source voltage based on the second amplified voltage and the second power source voltage. Therefore, a variation of the threshold voltage is compensated to enhance display quality.
摘要:
A display device includes a plurality of pixels, wherein each pixel includes: a light emitting element; a first capacitor connected between a first node and a second node; a driving transistor having an input terminal, an output terminal, and a control terminal connected to the second node where the driving transistor supplies a driving current to the light emitting element to emit light; a first switching unit supplying a first reference voltage to the driving transistor according to a first scanning signal and connecting the first node to a data voltage or the driving transistor; and a second switching unit supplying a driving voltage to the driving transistor according to a second scanning signal and connecting the first node to the data voltage. Accordingly, variations in threshold voltage of the driving transistor can be compensated for so that it is possible to display a uniform image.
摘要:
A display device includes a circuit board provided with signal lines, a first and a second panel unit separately attached to the circuit board and each provided with pixels comprising switching elements, and a driving circuit chip mounted on the circuit board and driving the first and the second panel units.
摘要:
An analog buffer, display device having the same and a method of driving the same are provided. The analog buffer applies an analog voltage to a load. The analog buffer includes a comparator and a transistor. The comparator is configured to compare an input voltage provided from an external device with the analog voltage applied to the load. The transistor is turned on to electrically charge the load when the analog voltage is lower than the input voltage or turned on to electrically discharge the load when the analog voltage is higher than the input voltage, and turned off when the analog voltage becomes substantially the same as the input voltage.
摘要:
A level shifter includes: a voltage dividing unit receiving a first voltage and an input voltage, and generating a middle voltage between the first voltage and the input voltage; first and second voltage compensating units connected to the voltage dividing unit and connected between the first voltage and a second voltage, for compensating a voltage variation of the voltage dividing unit; and an output unit receiving an output from the voltage dividing unit and generating an output voltage.