摘要:
There is provided a high withstand voltage LDMOS which is a MOS transistor formed on a semiconductor substrate and isolated by a trench, and a source region of which is sandwiched by a drain region, in which the metal layer gate wire connected to the gate electrode is led out outside the trench so as to pass over a P-type drift layer.
摘要:
A high voltage ESD protective diode having high avalanche withstand capability and capable of being formed by using manufacturing steps identical with those for a high voltage transistor to be protected, the device having a structure in which a gate oxide film is formed over a substrate surface at a PN junction formed of an N type low concentration semiconductor substrate constituting a cathode region and a P type low concentration diffusion region constituting an anode region, and a gate electrode which is disposed overriding the gate oxide film and a field oxide film is connected electrically by way of a gate plug with an anode electrode, whereby an electric field at the PN junction is moderated upon avalanche breakdown to obtain a high avalanche withstand capability. Further, the withstand voltage can be adjusted by changing the length of the field oxide film.
摘要:
The cell size is reduced and device reliability is improved for a semiconductor device including plural transistors making up a multi-channel output circuit. In a multi-channel circuit configuration, a group of transistors having a common function of plural channels are surrounded by a common trench for insulated isolation from another group of transistors having another function. The collectors of mutually adjacent transistors on the high side are commonly connected to a VH power supply, whereas the emitters of mutually adjacent transistors on the low side are commonly connected to a GND power supply.
摘要:
The cell size is reduced and device reliability is improved for a semiconductor device including plural transistors making up a multi-channel output circuit. In a multi-channel circuit configuration, a group of transistors having a common function of plural channels are surrounded by a common trench for insulated isolation from another group of transistors having another function. The collectors of mutually adjacent transistors on the high side are commonly connected to a VH power supply, whereas the emitters of mutually adjacent transistors on the low side are commonly connected to a GND power supply.
摘要:
An electric compressor is installed in a vehicle and includes a shell. The electric compressor includes an inverter, a cover, and a conductive component. The cover covers the shell and the inverter. The conductive component is electrically connected to the inverter and arranged outside the cover. The cover includes an outer guide surface inclined relative to a forward direction of the vehicle. The outer guide surface has a normal including a forward component directed in the forward direction. The outer guide surface is arranged closer to an outer side of the vehicle than the conductive component.
摘要:
An electric compressor is installed in a vehicle and includes a shell. The electric compressor includes an inverter, a cover, and a conductive component. The cover covers the shell and the inverter. The conductive component is electrically connected to the inverter and arranged outside the cover. The cover includes an outer guide surface inclined relative to a forward direction of the vehicle. The outer guide surface has a normal including a forward component directed in the forward direction. The outer guide surface is arranged closer to an outer side of the vehicle than the conductive component.