Electric compressor
    1.
    发明授权
    Electric compressor 有权
    电动压缩机

    公开(公告)号:US08777593B2

    公开(公告)日:2014-07-15

    申请号:US13072313

    申请日:2011-03-25

    IPC分类号: F04B17/03 B60K5/00 B60K28/14

    CPC分类号: F04B35/04 F04B39/121

    摘要: An electric compressor is installed in a vehicle and includes a shell. The electric compressor includes an inverter, a cover, and a conductive component. The cover covers the shell and the inverter. The conductive component is electrically connected to the inverter and arranged outside the cover. The cover includes an outer guide surface inclined relative to a forward direction of the vehicle. The outer guide surface has a normal including a forward component directed in the forward direction. The outer guide surface is arranged closer to an outer side of the vehicle than the conductive component.

    摘要翻译: 电动压缩机安装在车辆中并且包括壳体。 电动压缩机包括逆变器,盖子和导电部件。 盖子覆盖壳体和变频器。 导电部件电连接到逆变器并且布置在盖的外部。 盖包括相对于车辆前方倾斜的外引导表面。 外引导表面具有包括在向前方向上指向的前向分量的法线。 外引导表面布置成比导电部件更靠近车辆的外侧。

    ELECTRIC COMPRESSOR
    2.
    发明申请
    ELECTRIC COMPRESSOR 有权
    电动压缩机

    公开(公告)号:US20110243771A1

    公开(公告)日:2011-10-06

    申请号:US13072313

    申请日:2011-03-25

    IPC分类号: F04B17/03

    CPC分类号: F04B35/04 F04B39/121

    摘要: An electric compressor is installed in a vehicle and includes a shell. The electric compressor includes an inverter, a cover, and a conductive component. The cover covers the shell and the inverter. The conductive component is electrically connected to the inverter and arranged outside the cover. The cover includes an outer guide surface inclined relative to a forward direction of the vehicle. The outer guide surface has a normal including a forward component directed in the forward direction. The outer guide surface is arranged closer to an outer side of the vehicle than the conductive component.

    摘要翻译: 电动压缩机安装在车辆中并且包括壳体。 电动压缩机包括逆变器,盖子和导电部件。 盖子覆盖壳体和变频器。 导电部件电连接到逆变器并且布置在盖的外部。 盖包括相对于车辆前方倾斜的外引导表面。 外引导表面具有包括在向前方向上指向的前向分量的法线。 外引导表面布置成比导电部件更靠近车辆的外侧。

    Method of manufacturing semiconductor device having high voltage ESD protective diode
    3.
    发明授权
    Method of manufacturing semiconductor device having high voltage ESD protective diode 有权
    制造具有高压ESD保护二极管的半导体器件的方法

    公开(公告)号:US08546213B2

    公开(公告)日:2013-10-01

    申请号:US12962631

    申请日:2010-12-07

    IPC分类号: H01L21/8234

    摘要: A high voltage ESD protective diode having high avalanche withstand capability and capable of being formed by using manufacturing steps identical with those for a high voltage transistor to be protected, the device having a structure in which a gate oxide film is formed over a substrate surface at a PN junction formed of an N type low concentration semiconductor substrate constituting a cathode region and a P type low concentration diffusion region constituting an anode region, and a gate electrode which is disposed overriding the gate oxide film and a field oxide film is connected electrically by way of a gate plug with an anode electrode, whereby an electric field at the PN junction is moderated upon avalanche breakdown to obtain a high avalanche withstand capability. Further, the withstand voltage can be adjusted by changing the length of the field oxide film.

    摘要翻译: 一种具有高雪崩性能的高电压ESD保护二极管,其能够通过使用与待保护的高电压晶体管相同的制造步骤而形成,该器件具有其中栅极氧化膜形成在衬底表面上的结构 由构成阴极区域的N型低浓度半导体衬底和构成阳极区域的P型低浓度扩散区域形成的PN结以及覆盖栅极氧化膜和场氧化膜的栅电极通过 具有阳极电极的栅极插塞的方式,由此在雪崩击穿时PN结处的电场缓和以获得高雪崩承受能力。 此外,可以通过改变场氧化物膜的长度来调节耐受电压。

    Semiconductor device
    5.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号:US08525291B2

    公开(公告)日:2013-09-03

    申请号:US13495566

    申请日:2012-06-13

    IPC分类号: H01L27/08

    摘要: The cell size is reduced and device reliability is improved for a semiconductor device including plural transistors making up a multi-channel output circuit. In a multi-channel circuit configuration, a group of transistors having a common function of plural channels are surrounded by a common trench for insulated isolation from another group of transistors having another function. The collectors of mutually adjacent transistors on the high side are commonly connected to a VH power supply, whereas the emitters of mutually adjacent transistors on the low side are commonly connected to a GND power supply.

    摘要翻译: 对于包括构成多通道输出电路的多个晶体管的半导体器件,电池尺寸减小,器件可靠性得到改善。 在多通道电路结构中,具有多个通道的共同功能的一组晶体管由用于与具有另一功能的另一组晶体管绝缘隔离的公共沟槽包围。 高侧的相互相邻晶体管的集电极共同连接到VH电源,而低端的相互相邻晶体管的发射极共同连接到GND电源。

    Semiconductor device
    6.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号:US08217425B2

    公开(公告)日:2012-07-10

    申请号:US12505581

    申请日:2009-07-20

    IPC分类号: H01L27/10

    摘要: The cell size is reduced and device reliability is improved for a semiconductor device including plural transistors making up a multi-channel output circuit. In a multi-channel circuit configuration, a group of transistors having a common function of plural channels are surrounded by a common trench for insulated isolation from another group of transistors having another function. The collectors of mutually adjacent transistors on the high side are commonly connected to a VH power supply, whereas the emitters of mutually adjacent transistors on the low side are commonly connected to a GND power supply.

    摘要翻译: 对于包括构成多通道输出电路的多个晶体管的半导体器件,电池尺寸减小,器件可靠性得到改善。 在多通道电路结构中,具有多个通道的共同功能的一组晶体管由用于与具有另一功能的另一组晶体管绝缘隔离的公共沟槽包围。 高侧的相互相邻晶体管的集电极共同连接到VH电源,而低端的相互相邻晶体管的发射极共同连接到GND电源。