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公开(公告)号:US20100219078A1
公开(公告)日:2010-09-02
申请号:US12771056
申请日:2010-04-30
申请人: Keiichi KURASHINA , Mizuki Nagai , Satoru Yamamoto , Hiroyuki Kanda , Koji Mishima , Shinya Morisawa , Junji Kunisawa , Kunihito Ide , Hidenao Suzuki , Emanuel Cooper , Philippe Vereecken , Brett Baker-O'Neal , Hariklia Deligianni
发明人: Keiichi KURASHINA , Mizuki Nagai , Satoru Yamamoto , Hiroyuki Kanda , Koji Mishima , Shinya Morisawa , Junji Kunisawa , Kunihito Ide , Hidenao Suzuki , Emanuel Cooper , Philippe Vereecken , Brett Baker-O'Neal , Hariklia Deligianni
CPC分类号: C25D5/22 , C25D5/18 , C25D7/123 , C25D17/001 , C25D17/002 , C25D17/004 , C25D17/005 , C25D17/12 , C25D21/12 , H01L21/2885 , H01L21/7684 , H01L21/76849 , H01L21/76877
摘要: A plating apparatus securely carries out a flattening plating of a substrate to form a plated film having a flat surface without using a costly mechanism, and without applying an extra plating to the substrate. The plating apparatus includes a substrate holder; a cathode section having a seal member for watertightly sealing a peripheral portion of the substrate, and a cathode electrode for supplying an electric current to the substrate; an anode disposed in a position facing the surface of the substrate; a porous member disposed between the anode and the surface of the substrate; a constant-voltage control section for controlling a voltage applied between the cathode electrode and the anode at a constant value; and a current monitor section for monitoring an electric current flowing between the cathode electrode and the anode, and feeding back a detection signal to the constant-voltage control section.
摘要翻译: 电镀装置可以牢固地进行基板的平坦化镀以形成具有平坦表面的镀膜而不使用昂贵的机构,并且不对基板施加额外的电镀。 电镀装置包括:基板支架; 具有用于水密密封基板的周边部分的密封部件的阴极部分和用于向基板供给电流的阴极电极; 设置在面向所述基板的表面的位置的阳极; 设置在所述阳极和所述基板的表面之间的多孔构件; 恒定电压控制部分,用于以恒定值控制在所述阴极和所述阳极之间施加的电压; 以及电流监视部分,用于监视在阴极和阳极之间流动的电流,并将检测信号反馈到恒压控制部分。
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公开(公告)号:US07736474B2
公开(公告)日:2010-06-15
申请号:US11245490
申请日:2005-10-07
申请人: Keiichi Kurashina , Mizuki Nagai , Satoru Yamamoto , Hiroyuki Kanda , Koji Mishima , Shinya Morisawa , Junji Kunisawa , Kunihito Ide , Hidenao Suzuki , Emanuel Cooper , Philippe Vereecken , Brett Baker-O'Neal , Hariklia Deligianni
发明人: Keiichi Kurashina , Mizuki Nagai , Satoru Yamamoto , Hiroyuki Kanda , Koji Mishima , Shinya Morisawa , Junji Kunisawa , Kunihito Ide , Hidenao Suzuki , Emanuel Cooper , Philippe Vereecken , Brett Baker-O'Neal , Hariklia Deligianni
CPC分类号: C25D5/22 , C25D5/18 , C25D7/123 , C25D17/001 , C25D17/002 , C25D17/004 , C25D17/005 , C25D17/12 , C25D21/12 , H01L21/2885 , H01L21/7684 , H01L21/76849 , H01L21/76877
摘要: A plating apparatus securely carries out a flattening plating of a substrate to form a plated film having a flat surface without using a costly mechanism, and without applying an extra plating to the substrate. The plating apparatus includes a substrate holder; a cathode section having a seal member for watertightly sealing a peripheral portion of the substrate, and a cathode electrode for supplying an electric current to the substrate; an anode disposed in a position facing the surface of the substrate; a porous member disposed between the anode and the surface of the substrate; a constant-voltage control section for controlling a voltage applied between the cathode electrode and the anode at a constant value; and a current monitor section for monitoring an electric current flowing between the cathode electrode and the anode, and feeding back a detection signal to the constant-voltage control section.
摘要翻译: 电镀装置可以牢固地进行基板的平坦化镀以形成具有平坦表面的镀膜而不使用昂贵的机构,并且不对基板施加额外的电镀。 电镀装置包括:基板支架; 具有用于水密密封基板的周边部分的密封部件的阴极部分和用于向基板供给电流的阴极电极; 设置在面向所述基板的表面的位置的阳极; 设置在所述阳极和所述基板的表面之间的多孔构件; 恒定电压控制部分,用于以恒定值控制在所述阴极和所述阳极之间施加的电压; 以及电流监视部分,用于监视在阴极和阳极之间流动的电流,并将检测信号反馈到恒压控制部分。
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公开(公告)号:US20070034526A1
公开(公告)日:2007-02-15
申请号:US11202684
申请日:2005-08-12
申请人: Natsuki Makino , Junji Kunisawa , Keisuke Namiki , Yukio Fukunaga , Katsuyuki Musaka , Ray Fang , Emanuel Cooper , John Cotte , Hariklia Deligianni , Keith Kwietniak , Brett Baker-O'Neal , Matteo Flotta , Philippe Vereecken
发明人: Natsuki Makino , Junji Kunisawa , Keisuke Namiki , Yukio Fukunaga , Katsuyuki Musaka , Ray Fang , Emanuel Cooper , John Cotte , Hariklia Deligianni , Keith Kwietniak , Brett Baker-O'Neal , Matteo Flotta , Philippe Vereecken
IPC分类号: B23H3/00
摘要: An electrolytic processing apparatus can planarize uniformly over an entire surface of a substrate under a low pressure without any damages to the substrate. The electrolytic processing apparatus has a substrate holder configured to hold and rotate a substrate having a metal film formed on a surface of the substrate and an electrolytic processing unit configured to perform an electrolytic process on the substrate held by the substrate holder. The electrolytic processing unit has a rotatable processing electrode, a polishing pad attached to the rotatable processing electrode, and a pressing mechanism configured to press the polishing pad against the substrate. The electrolytic processing unit also has a liquid supply mechanism configured to supply an electrolytic processing liquid between the substrate and the rotatable processing electrode, a relative movement mechanism operable to move the substrate and the rotatable processing electrode relative to each other, and a power supply configured to applying a voltage between the rotatable processing electrode and the metal film of the substrate so that the rotatable processing electrode serves as a cathode and the metal film of the substrate serves as an anode.
摘要翻译: 电解处理装置可以在低压下在基板的整个表面上均匀地平坦化,而不会对基板造成任何损坏。 所述电解处理装置具有基板保持件,所述基板保持器被构造成保持和旋转形成在所述基板的表面上的金属膜的基板和被配置为在由所述基板保持器保持的所述基板上进行电解处理的电解处理单元。 电解处理单元具有可旋转的处理电极,附接到可旋转处理电极的抛光垫,以及被配置为将抛光垫压靠在基板上的按压机构。 电解处理单元还具有:液体供给机构,被构造成在基板和可旋转处理电极之间提供电解处理液体;相对移动机构,其可操作以相对于彼此移动基板和可旋转处理电极;电源配置 在可旋转处理电极和基板的金属膜之间施加电压,使得可旋转处理电极用作阴极,并且基板的金属膜用作阳极。
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公开(公告)号:US20090130845A1
公开(公告)日:2009-05-21
申请号:US11942393
申请日:2007-11-19
IPC分类号: H01L21/4763
CPC分类号: H01L21/76843 , C25D3/38 , C25D5/34 , H01L21/2885 , H01L21/76846 , H01L21/76873 , H01L21/76877
摘要: A method of depositing copper directly onto a tantalum alloy layer of an on-chip copper interconnect structure, which includes electrodepositing copper from a neutral or basic electrolyte onto a surface of a tantalum alloy layer, in which the tantalum alloy layer is deposited on a substrate of the on-chip copper interconnect structure, and in which the copper nucleates onto the surface of the tantalum alloy layer without use of a seed layer to form a copper conductor.
摘要翻译: 一种将铜直接沉积在片上铜互连结构的钽合金层上的方法,该方法包括将铜从中性或碱性电解质电沉积到钽合金层的表面上,其中钽合金层沉积在基底上 的芯片铜互连结构,并且其中铜不会使用种子层成核形成铜导体的钽合金层的表面。
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