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公开(公告)号：US4897219A
公开(公告)日：1990-01-30
申请号：US268618
申请日：1988-11-07
申请人： Keiichi Noi , Akihiro Takami , Kazuhide Ebine , Kimiko Kumazawa
发明人： Keiichi Noi , Akihiro Takami , Kazuhide Ebine , Kimiko Kumazawa
摘要： It is a voltage-dependent non-linear resistance ceramic composition comprising SrTiO.sub.3 as host material, Dy.sub.2 O.sub.3 or Dy.sub.2 O.sub.3 and Nb.sub.2 O.sub.5 or Ta.sub.2 O.sub.5 or Ta.sub.2 O.sub.5 and Nb.sub.2 O.sub.5 as accelerating agent for semiconductorization, thereby changing crystal to a low resistance, and changing crystal boundary to a high resistance.In case Dy.sub.2 O.sub.3 or Dy.sub.2 O.sub.3 and Nb.sub.2 O.sub.5 are used as the accelerating agent for semiconductorization, one kind or more selected from the group consisting of Na, K, Ca, Cd, In, Ba, Pb, Ag, Ce, La, Sc, Y, Cs, Au, Mg, Zr, Sn, Sb, W, Bi, Ni, Fe, Ga, Pt, Tl, Al, Si, Be, Li, Eu, Gd, Tb, Tm, Lu, Th, Ir, Os, Hf and Ru. Alternatively, in case Ta.sub.2 O.sub.5 or Ta.sub.2 O.sub.5 and Nb.sub.2 O.sub.5 are used as the accelerating agent for semiconductorization, one kind or more selected from the group consisting of Na, K, Ca, Cd, In, Ba, Pb, Mg, Zr, Sn, Sb, W, Bi, Eu, Gd, Tb, Tm, Lu, Th, Ir, Os, Hf, Ru, Ga, Pt, Tl, La, Sc, Y, Cs, and Au.As a result, baristor characteristic is obtainable by means of the high resistance at crystal boundaries and capacitor between crystal granules--crystal boundary--crystal granule.From this matter, an element having both functions of the baristor characteristics and the capacitor characteristics are obtainable, and performs effect in surge absorption and noise elimination.
摘要翻译： 作为主要材料的SrTiO 3的电压依赖性非线性电阻陶瓷组合物，Dy 2 O 3，Dy 2 O 3，Nb 2 O 5，Ta 2 O 5，Ta 2 O 5，Nb 2 O 5等作为半导体用的加速剂，从而将晶体变为低电阻，将晶界改变为高 抵抗性。 在使用Dy2O3或Dy2O3和Nb2O5作为半导体加速剂的情况下，选自Na，K，Ca，Cd，In，Ba，Pb，Ag，Ce，La，Sc，Y， Cs，Au，Mg，Zr，Sn，Sb，W，Bi，Ni，Fe，Ga，Pt，Tl，Al，Si，Be，Li，Eu，Gd，Tb，Tm，Lu，Th，Ir， Hf和Ru。 或者，在使用Ta2O5或Ta2O5和Nb2O5作为半导体用加速剂的情况下，选自Na，K，Ca，Cd，In，Ba，Pb，Mg，Zr，Sn，Sb， W，Bi，Eu，Gd，Tb，Tm，Lu，Th，Ir，Os，Hf，Ru，Ga，Pt，Tl，La，Sc，Y，Cs和Au。 结果，可以通过晶界处的高电阻和晶粒之间的电容器 - 晶体边界晶粒颗粒获得电阻器特性。 由此，能够获得具有电阻特性和电容器特性两者的元件，并且能够实现浪涌吸收和噪声消除的效果。
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公开(公告)号：US4839097A
公开(公告)日：1989-06-13
申请号：US13176
申请日：1987-02-09
申请人： Keiichi Noi , Akihiro Takami , Kazuhide Ebine , Kimiko Kumazawa
发明人： Keiichi Noi , Akihiro Takami , Kazuhide Ebine , Kimiko Kumazawa
摘要： This is a voltage-dependent non-linear resistance ceramic composition wherein resistance of crystal is decreased by containing SrTiO.sub.3 as host material, and Nb.sub.2 O.sub.5 and Ta.sub.2 O.sub.5 as semiconductorization accelerating agent, and further by adding as additive one kind or more oxide of element selected from the group consisting of MnO.sub.2, Ga, Pt, Tl, Si, Ti, Li, La, Cu, Y, Cs, Au, Mo, S, Be, Al, Na, K, Ca, Cd, In, Ba, Pb, Eu, Gd, Tb, Tm, Lu, Th, Ir, Os, Hf, Ru, Mg, Zr, Sn, Sb and W, these additive is segregated at crystal granule boundaries, thereby making the crystal granule boundaries to high resistance.Accordingly, by the high resistance layer at the crystal boundaries the varistor characteristic is obtainable, and a capacitance characteristic is obtainable between the crystal granule-crystal granule boundary-crystal granule.From this, an element having both functions of the varistor characteristics and the capacitor characteristics are obtainable, and performs effect in surge absorption and noise elemination.
摘要翻译： 这是一种电压依赖性非线性电阻陶瓷组合物，其中通过含有作为主体材料的SrTiO 3和作为半导体促进剂的Nb 2 O 5和Ta 2 O 5，还可以添加一种或多种选自 由MnO 2，Ga，Pt，Tl，Si，Ti，Li，La，Cu，Y，Cs，Au，Mo，S，Be，Al，Na，K，Ca，Cd，In，Ba，Pb，Eu组成的组 ，Gd，Tb，Tm，Lu，Th，Ir，Os，Hf，Ru，Mg，Zr，Sn，Sb和W，这些添加剂在晶粒边界处分离，从而使晶粒边界成为高电阻。 因此，通过晶界处的高电阻层，可以获得压敏电阻特性，并且可以在结晶颗粒状晶粒边界晶粒之间获得电容特性。 由此，可以获得具有变阻器特性和电容器特性两者的元件，并且在浪涌吸收和噪声电化中起作用。
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公开(公告)号：US06749891B2
公开(公告)日：2004-06-15
申请号：US10196939
申请日：2002-07-18
申请人： Kaori Shiraishi , Tatsuya Inoue , Riho Sasaki , Keiichi Noi , Hideaki Tokunaga
发明人： Kaori Shiraishi , Tatsuya Inoue , Riho Sasaki , Keiichi Noi , Hideaki Tokunaga
IPC分类号： B05D512
CPC分类号： H01C17/285 , H01C7/102 , H01C7/112 , H01C17/06546 , Y10T29/49082 , Y10T29/49085 , Y10T29/49098
摘要： A precipitate film having plating resistance may be formed on the surface of a varistor element during sintering process. Accordingly, the manufacturing process can be shortened, thereby improving the productivity. The manufacturing method comprises (a) a first process of forming the varistor element whose main component is zinc oxide; (b) a second process of sintering the varistor element and precipitating zinc compound having at least one of acid resistance and alkali resistance on the surface of the varistor. Preferably, the manufacturing method further comprises (c) a process of attaching an external electrode to the varistor element, and the external electrode attaching process is executed after finishing the varistor element sintering process.
摘要翻译： 可以在烧结过程中在可变电阻元件的表面上形成具有电镀电阻的沉淀膜。 因此，能够缩短制造工序，提高生产率。 制造方法包括：（a）形成其主要成分为氧化锌的变阻器元件的第一工序; （b）在压敏电阻表面上烧结变阻器元件和沉淀具有耐酸性和耐碱性中的至少一种的锌化合物的第二工序。 优选地，制造方法还包括（c）将外部电极附着到变阻器元件的处理，并且在完成非线性电阻元件烧结处理之后执行外部电极附着处理。
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公开(公告)号：US5520759A
公开(公告)日：1996-05-28
申请号：US211707
申请日：1994-04-20
申请人： Keiichi Noi , Iwao Ueno , Yoichi Ogoshi , Yasuo Wakahata
发明人： Keiichi Noi , Iwao Ueno , Yoichi Ogoshi , Yasuo Wakahata
CPC分类号： C04B35/47 , C01G23/002 , C01G23/006 , C04B35/6262 , C04B35/64 , H01C7/115 , H01C7/12 , C01P2002/50 , C01P2006/40 , C04B2235/3208 , C04B2235/3241 , C04B2235/3251 , C04B2235/3262 , C04B2235/3418 , C04B2235/5436 , C04B2235/6025 , C04B2235/6582 , C04B2235/663 , C04B2235/664 , C04B2235/666 , C04B2235/79
摘要： The present invention relates to a method for manufacture of ceramic parts used for protecting semiconductor devices such as IC, LSI, etc. against anomalous high voltages such as noise, pulse, static electricity, etc. and the object of the present invention is to provide ceramic parts capable of removing or restraining high-frequency noises on signal lines by reducing the impedance of the devices.In order to attain the above object, according to the present invention, a pulse voltage of 50 kV in maximum value which requires a time of 200 nanoseconds or less for reaching the maximum value from an initial value and a time of 1 microsecond or less for returning to the initial value through the maximum value and which has an energy of 0.5 joule or lower is applied at least once between the electrodes (2).
摘要翻译： PCT No.PCT / JP93 / 01240 Sec。 371日期1994年04月20日 102（e）1994年4月20日PCT 1993年9月2日PCT公布。 公开号WO94 / 06129 日期：1994年3月17日。本发明涉及一种用于保护诸如IC，LSI等半导体器件的陶瓷部件的防止异常高电压如噪声，脉冲，静电等的方法， 本发明的目的是提供能够通过降低装置的阻抗来消除或抑制信号线上的高频噪声的陶瓷部件。 为了实现上述目的，根据本发明，对于从初始值达到最大值和1微秒以下的时间，需要200纳秒以下的时间的最大值为50kV的脉冲电压和1微秒以下的时间 在电极（2）之间至少施加一次，通过最大值返回到初始值并且具有0.5焦耳或更低的能量。
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公开(公告)号：US4781859A
公开(公告)日：1988-11-01
申请号：US930995
申请日：1986-11-14
申请人： Keiichi Noi
发明人： Keiichi Noi
摘要： A voltage-dependent non-linear resistance ceramic composition comprises SrTiO.sub.3, Sr.sub.1-x Ba.sub.x TiO.sub.3 (0.001.ltoreq.x.ltoreq.0.300) or Sr.sub.1-x Ca.sub.x TiO.sub.3 (0.001.ltoreq.x.ltoreq.0.300) as host material and further includes 0.001-2.000 mol % of Y.sub.2 O.sub.3 as metal oxide for semiconductorization acceleration, 0.001-3.000 mol % of metal oxide(s) of at least one selected from the group consisting of Ca.sub.2 O.sub.3, CuO, Ag.sub.2 O, Al.sub.2 O.sub.3, ZrO.sub.2, Bao, SiO.sub.2, MgO, B.sub.2 O.sub.3, MnO.sub.2, NiO, MoO.sub.3 BeO, Fe.sub.2 O.sub.3, Li.sub.2 O, Cr.sub.2 O.sub.3, PbO, CaO, TiO.sub.2, P.sub.2 O.sub.5, Sb.sub.2 O.sub.3 and V.sub.2 O.sub.5, which segregates at grain boundary to make the grain boundary selectively to high resistances; an element made of the composition has both characteristics of capacitance and varistor, and is suitable for filter to remove noise or surge.
摘要翻译： 电压依赖性非线性电阻陶瓷组合物包含作为主体材料的SrTiO3，Sr1-xBaxTiO3（0.001≤x≤0.300）或Sr1-xCaxTiO3（0.001≤x≤0.300），并且还包括0.001- 作为用于半导体加速的金属氧化物的Y2O3为2.000摩尔％，选自Ca 2 O 3，CuO，Ag 2 O，Al 2 O 3，ZrO 2，Bao，SiO 2，MgO，B 2 O 3中的至少一种以上的金属氧化物为0.001-3.000摩尔％ ，MnO 2，NiO，MoO 3 + L，BeO，Fe 2 O 3，Li 2 O，Cr 2 O 3，PbO，CaO，TiO 2，P 2 O 5，Sb 2 O 3和V 2 O 5，其在晶界处分离，使晶界选择性地成为高电阻; 由该组合物制成的元件具有电容和压敏电阻的特性，并且适用于滤波器以去除噪声或浪涌。
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