公开(公告)号：US06661152B2

公开(公告)日：2003-12-09

申请号：US10264264

申请日：2002-10-04

申请人： Keiji Ishibashi ,  Takahiro Imai ,  Tomoki Uemura ,  Daichi Kawaguchi ,  Hideaki Nakahata ,  Satoshi Fujii

发明人： Keiji Ishibashi ,  Takahiro Imai ,  Tomoki Uemura ,  Daichi Kawaguchi ,  Hideaki Nakahata ,  Satoshi Fujii

IPC分类号： H03H925

CPC分类号： H03H9/02582

摘要： A diamond film is deposited in the thickness of 20 &mgr;m on a silicon wafer 0.8 mm thick by filament CVD. Here the hydrogen content of the diamond film is adjusted in the range of not less than 1% nor more than 5% in atomic percent. By mechanical polishing with a grinding wheel including diamond abrasives, the diamond film is smoothed so that the arithmetic mean roughness (Ra) of the surface thereof becomes not more than 20 nm.

摘要翻译： 通过灯丝CVD在0.8mm厚的硅晶片上沉积厚度为20μm的金刚石膜。 这里，将金刚石膜的氢含量调整为原子百分比为1％以上5％以下的范围。 通过用包括金刚石磨料的砂轮进行机械抛光，使金刚石膜平滑，使得其表面的算术平均粗糙度（Ra）不超过20nm。

公开(公告)号：US06416865B1

公开(公告)日：2002-07-09

申请号：US09400193

申请日：1999-09-21

申请人： Satoshi Fujii ,  Tomoki Uemura ,  Yuichiro Seki ,  Hideaki Nakahata ,  Shinichi Shikata

发明人： Satoshi Fujii ,  Tomoki Uemura ,  Yuichiro Seki ,  Hideaki Nakahata ,  Shinichi Shikata

IPC分类号： H03H8165

CPC分类号： C23C16/26 ,  H03H3/08 ,  H03H9/02582 ,  Y10T428/30

摘要： The invention offers a hard carbon film and a SAW substrate that are easy to fabricate or low in manufacturing cost while virtually maintaining the quality that affects the important properties of a device that comprises the hard carbon film or the SAW substrate. The hard carbon film comprises a composite film of graphite-like diamond and carbon clusters; the composite film has a continuous crystal structure.

摘要翻译： 本发明提供容易制造或制造成本低的硬碳膜和SAW基板，同时实质上保持影响包括硬碳膜或SAW基板的装置的重要性能的质量。 硬碳膜包括石墨状金刚石和碳簇的复合膜; 复合膜具有连续的晶体结构。

公开(公告)号：US06210780B1

公开(公告)日：2001-04-03

申请号：US09166840

申请日：1998-10-06

申请人： Satoshi Fujii ,  Yuichiro Seki ,  Kentaro Yoshida ,  Hideaki Nakahata ,  Kenjiro Higaki ,  Hiroyuki Kitabayashi ,  Tomoki Uemura ,  Shin-ichi Shikata

发明人： Satoshi Fujii ,  Yuichiro Seki ,  Kentaro Yoshida ,  Hideaki Nakahata ,  Kenjiro Higaki ,  Hiroyuki Kitabayashi ,  Tomoki Uemura ,  Shin-ichi Shikata

IPC分类号： H01L4118

CPC分类号： H03H3/08 ,  H03H9/02582 ,  Y10T428/24479 ,  Y10T428/24917 ,  Y10T428/24975 ,  Y10T428/265 ,  Y10T428/30 ,  Y10T428/31678

摘要： Surfaces of diamond crystals are examined by coating the surfaces with thin metal films, launching laser beams to the diamond surfaces in a slanting angle, detecting defects and particles on the diamond surfaces by the scattering of beams and counting the defects and particles by a laser scanning surface defect detection apparatus. Diamond SAW devices should be made on the diamond films or bulks with the defect density less than 300 particles cm−2. Preferably, the diamond surfaces should have roughness less than Ra20 nm. Diamond SAW filters can be produced by depositing a piezoelectric film and making interdigital transducers on the low-defect density diamond crystals.

摘要翻译： 通过用薄金属膜涂覆表面来检查金刚石晶体的表面，以倾斜的角度将激光束发射到金刚石表面，通过光束的散射检测金刚石表面上的缺陷和颗粒，并通过激光扫描计算缺陷和颗粒 表面缺陷检测装置。 金刚石SAW器件应在缺陷密度小于300颗粒cm-2的金刚石膜或块上制成。 优选地，金刚石表面应具有小于Ra20nm的粗糙度。 金刚石SAW滤波器可以通过沉积压电膜并在低缺陷密度的金刚石晶体上形成叉指式换能器来制造。

公开(公告)号：US06448688B2

公开(公告)日：2002-09-10

申请号：US09739210

申请日：2000-12-19

申请人： Satoshi Fujii ,  Tomoki Uemura ,  Yuichiro Seki ,  Hideaki Nakahata ,  Shinichi Shikata

发明人： Satoshi Fujii ,  Tomoki Uemura ,  Yuichiro Seki ,  Hideaki Nakahata ,  Shinichi Shikata

IPC分类号： H01L4108

CPC分类号： C23C16/26 ,  H03H3/08 ,  H03H9/02582 ,  Y10T428/30

摘要： The invention offers a hard carbon film and a SAW substrate that are easy to fabricate or low in manufacturing cost while virtually maintaining the quality that affects the important properties of a device that comprises the hard carbon film or the SAW substrate. The hard carbon film comprises a composite film of graphite-like diamond and carbon clusters; the composite film has a continuous crystal structure.

摘要翻译： 本发明提供容易制造或制造成本低的硬碳膜和SAW基板，同时实质上保持影响包括硬碳膜或SAW基板的装置的重要性能的质量。 硬碳膜包括石墨状金刚石和碳簇的复合膜; 复合膜具有连续的晶体结构。

公开(公告)号：US06356006B1

公开(公告)日：2002-03-12

申请号：US09543415

申请日：2000-04-05

申请人： Satoshi Fujii ,  Yuichiro Seki ,  Kentaro Yoshida ,  Hideaki Nakahata ,  Kenjiro Higaki ,  Hiroyuki Kitabayashi ,  Tomoki Uemura ,  Shin-ichi Shikata

发明人： Satoshi Fujii ,  Yuichiro Seki ,  Kentaro Yoshida ,  Hideaki Nakahata ,  Kenjiro Higaki ,  Hiroyuki Kitabayashi ,  Tomoki Uemura ,  Shin-ichi Shikata

IPC分类号： B32B3300

CPC分类号： H03H3/08 ,  H03H9/02582 ,  Y10T428/24479 ,  Y10T428/24917 ,  Y10T428/24975 ,  Y10T428/265 ,  Y10T428/30 ,  Y10T428/31678

摘要： Surfaces of diamond crystals are examined by coating the surfaces with thin metal films, launching laser beams to the diamond surfaces in a slanting angle, detecting defects and particles on the diamond surfaces by the scattering of beams and counting the defects and particles by a laser scanning surface defect detection apparatus. Diamond SAW devices should be made on the diamond films or bulks with the defect density less than 300 particles cm−2. Preferably, the diamond,surfaces should have roughness less than Ra20 nm. Diamond SAW filters can be produced by depositing a piezoelectric film and making interdigital transducers on the low-defect density diamond crystals.

摘要翻译： 通过用薄金属膜涂覆表面来检查金刚石晶体的表面，以倾斜的角度将激光束发射到金刚石表面，通过光束的散射检测金刚石表面上的缺陷和颗粒，并通过激光扫描计算缺陷和颗粒 表面缺陷检测装置。 金刚石SAW器件应在缺陷密度小于300颗粒cm-2的金刚石膜或块上制成。 优选地，金刚石，表面应具有小于Ra20nm的粗糙度。 金刚石SAW滤波器可以通过沉积压电膜并在低缺陷密度的金刚石晶体上形成叉指式换能器来制造。

公开(公告)号：US06320296B1

公开(公告)日：2001-11-20

申请号：US09825887

申请日：2001-04-05

申请人： Satoshi Fujii ,  Yuichiro Seki ,  Kentaro Yoshida ,  Hideaki Nakahata ,  Kenjiro Higaki ,  Hiroyuki Kitabayashi ,  Tomoki Uemura ,  Shin-ichi Shikata

发明人： Satoshi Fujii ,  Yuichiro Seki ,  Kentaro Yoshida ,  Hideaki Nakahata ,  Kenjiro Higaki ,  Hiroyuki Kitabayashi ,  Tomoki Uemura ,  Shin-ichi Shikata

IPC分类号： H10L4108

CPC分类号： H03H3/08 ,  H03H9/02582 ,  Y10T428/24479 ,  Y10T428/24917 ,  Y10T428/24975 ,  Y10T428/265 ,  Y10T428/30 ,  Y10T428/31678

摘要： Surfaces of diamond crystals are examined by coating the surfaces with thin metal films, launching laser beams to the diamond surfaces in a slanting angle, detecting defects and particles on the diamond surfaces by the scattering of beams and counting the defects and particles by a laser scanning surface defect detection apparatus. Diamond SAW devices should be made on the diamond films or bulks with the defect density less than 300 particles cm−2. Preferably, the diamond surfaces should have roughness less than Ra20 nm. Diamond SAW filters can be produced by depositing a piezoelectric film and making interdigital transducers on the low-defect density diamond crystals.

公开(公告)号：US5959389A

公开(公告)日：1999-09-28

申请号：US964469

申请日：1997-11-04

申请人： Hideaki Nakahata ,  Tomoki Uemura ,  Kenjiro Higaki ,  Satoshi Fujii ,  Hiroyuki Kitabayashi ,  Shin-ichi Shikata

发明人： Hideaki Nakahata ,  Tomoki Uemura ,  Kenjiro Higaki ,  Satoshi Fujii ,  Hiroyuki Kitabayashi ,  Shin-ichi Shikata

IPC分类号： H03H9/02 ,  H03H9/10 ,  H03H9/145

CPC分类号： H03H9/02582

摘要： A first surface acoustic wave device for 2nd mode surface acoustic wave of a wavelength .lambda. (.mu.m) according to the present invention is a SAW device of "type A" device shown in FIG. 6A, wherein a parameter kh3=2.pi.(t.sub.A /.lambda.) is: 0.033.ltoreq.kh3.ltoreq.0.099, and wherein a parameter kh1=2.pi.(t.sub.Z /.lambda.) and a parameter kh2=2.pi.(t.sub.S /.lambda.) are given within a region ABCDEFGHIJKLA in a two-dimensional Cartesin coordinate graph of FIG. 1.

摘要翻译： 根据本发明的波长λ（μm）的第二模式表面声波的第一表面声波装置是图1所示的“A型”装置的SAW装置。 其中参数kh3 =2π（tA /λ）为：0.033≤kh3

公开(公告)号：US06805808B2

公开(公告)日：2004-10-19

申请号：US10129925

申请日：2002-05-13

申请人： Satoshi Fujii ,  Noboru Gotou ,  Tomoki Uemura ,  Toshiaki Saka ,  Katsuhiro Itakura

发明人： Satoshi Fujii ,  Noboru Gotou ,  Tomoki Uemura ,  Toshiaki Saka ,  Katsuhiro Itakura

IPC分类号： H01L21301

CPC分类号： H01L21/78 ,  B23K26/364 ,  B23K26/40 ,  B23K2101/40 ,  B23K2103/172 ,  B23K2103/30 ,  B23K2103/50

摘要： A method for separating chips from a diamond wafer comprising a substrate, a chemically vapor-deposited diamond layer, and microelectronic elements, with the microelectronic elements protected from thermal damage and degradation caused by the thermally decomposed cuttings produced during the processing steps. (1) Front-side grooves 6 are formed on the chemically vapor-deposited diamond layer 2 by laser processing using a laser such as a YAG, CO2, or excimer laser each having a large output so that the grooves 6 can have a depth 1/100 to 1.5 times the thickness of the diamond layer. (2) The thermally decomposed cuttings produced during the laser processing are removed by using a plasma. (3) Back-side grooves 9 are formed on the substrate 1 by dicing such that the back-side grooves 9 are in alignment with the front-side grooves 6. (4) The diamond wafer 4 is divided into individual chips 10 by applying mechanical stresses.

公开(公告)号：US06713941B2

公开(公告)日：2004-03-30

申请号：US10204454

申请日：2002-08-21

申请人： Katsuhiro Itakura ,  Akihiro Hachigo ,  Hideaki Nakahata ,  Satoshi Fujii ,  Shinichi Shikata

发明人： Katsuhiro Itakura ,  Akihiro Hachigo ,  Hideaki Nakahata ,  Satoshi Fujii ,  Shinichi Shikata

IPC分类号： H03H925

CPC分类号： H03H9/02582

摘要： A surface acoustic wave (SAW) device that is suitable for mass production and that has excellent operational performance at the superhigh-frequency range. The SAW device comprises (a) a diamond layer 3; (b) a ZnO layer 4, with a thickness of tz, formed on the diamond layer 3; (c) interdigital transducers (IDTs) 5, which excite and receive a SAW, formed on the ZnO layer 4; and (d) an SiO2 layer 6, with a thickness of ts, formed on the ZnO layer 4 so that the SiO2 layer can cover the IDTs 5. The structure of the SAW device is determined by specific numeric ranges of the parameters kh1 and kh2, which are given in equations kh1=3·2&pgr;·(tz/&lgr;) and kh2=3·2&pgr;·(ts/&lgr;), where &lgr; signifies the wavelength of the fundamental wave of the second Sezawa mode of the SAW. The SAW device uses the third harmonic of the second Sezawa mode of the SAW excited.

摘要翻译： 一种适用于大规模生产且在超高频范围内具有出色的运行性能的表面声波（SAW）器件。 SAW器件包括（a）金刚石层3; （b）在金刚石层3上形成厚度为tz的ZnO层4; （c）在ZnO层4上形成的用于激发和接收SAW的叉指换能器（IDT）5; 和（d）在ZnO层4上形成厚度为ts的SiO 2层6，使得SiO 2层可以覆盖IDT 5. SAW器件的结构由参数kh1和kh2的特定数值范围确定 ，其方程式为kh1 = 3.2pi（tz /λ）和kh2 = 3.2pi（ts / lambda），其中λ表示SAW的第二Sezawa模式的基波的波长。 SAW器件使用SAW激励的第二Sezawa模式的三次谐波。

公开(公告)号：US5750243A

公开(公告)日：1998-05-12

申请号：US521382

申请日：1995-06-16

申请人： Shin-ichi Shikata ,  Hideaki Nakahata ,  Kenjiro Higaki ,  Satoshi Fujii ,  Akihiro Hachigo

发明人： Shin-ichi Shikata ,  Hideaki Nakahata ,  Kenjiro Higaki ,  Satoshi Fujii ,  Akihiro Hachigo

IPC分类号： H03H3/08 ,  H03H9/02 ,  H03H9/145 ,  H03H9/25 ,  H03H9/64

CPC分类号： H03H9/6436 ,  H03H3/08 ,  H03H9/02582 ,  H03H9/6433 ,  H03H9/6466 ,  Y10T428/24802 ,  Y10T428/24926 ,  Y10T428/24942 ,  Y10T428/24975 ,  Y10T428/265 ,  Y10T428/30

摘要： A diamond base material for surface acoustic wave device, which includes: a low-resistivity base material, and a high-resistivity diamond layer having a thickness of 5-50 .mu.m disposed on the low-resistivity base material.