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    Diamond heat sink including microchannel therein and methods for manufacturing diamond heat sinks
    4.
    发明授权
    Diamond heat sink including microchannel therein and methods for manufacturing diamond heat sinks 失效
    金刚石散热器，其中包括微通道及其制造金刚石散热器的方法

    公开(公告)号：US5874775A

    公开(公告)日：1999-02-23

    申请号：US840161

    申请日：1997-04-14

    申请人： Hiromu Shiomi ,  Hideaki Nakahata ,  Yoshiki Nishibayashi ,  Shin-ichi Shikata

    发明人： Hiromu Shiomi ,  Hideaki Nakahata ,  Yoshiki Nishibayashi ,  Shin-ichi Shikata

    IPC分类号： H01L23/373 ,  H01L23/38 ,  H01L23/34 ,  H01L23/06

    CPC分类号： H01L23/38 ,  H01L23/3732 ,  H01L2924/0002 ,  Y10S257/93

    摘要： A diamond heat sink of the present invention comprises: a support layer consisting of substantially undoped diamond; a heat sensitive layer consisting of doped diamond, disposed on the surface of the support layer; an insulation layer consisting of substantially undoped diamond, disposed on a predetermined region in the surface of the heat sensitive layer; electrodes disposed on the heat sensitive layer, wherein an exothermal device is placed on the surface of the insulation layer; and a cooling structure disposed on the backside of the support layer, the cooling structure having at least one microchannel, the microchannel being defined by a diamond, wherein an exothermal device is to be placed on the surface of the insulation layer; and wherein the heat sensitive layer and the electrodes form a thermistor, the electrical resistivity of the thermistor being capable of varying corresponding to heat generated from the exothermal device and transferred through the insulation layer to the thermistor.

    摘要翻译： 本发明的金刚石散热器包括：由基本上未掺杂的金刚石构成的支撑层; 由掺杂金刚石构成的热敏层，设置在支撑层的表面上; 由基本上未掺杂的金刚石构成的绝缘层，设置在热敏层表面的预定区域上; 设置在热敏层上的电极，其中放热装置放置在绝缘层的表面上; 以及设置在所述支撑层的背面上的冷却结构，所述冷却结构具有至少一个微通道，所述微通道由金刚石限定，其中放热装置将被放置在所述绝缘层的表面上; 并且其中所述热敏层和所述电极形成热敏电阻，所述热敏电阻的电阻率能够相应于从所述放热器件产生的热量而变化并通过所述绝缘层传递到所述热敏电阻器。

    Ohmic electrode and method for forming it
    7.
    发明授权
    Ohmic electrode and method for forming it 失效
    欧姆电极及其形成方法

    公开(公告)号：US5668382A

    公开(公告)日：1997-09-16

    申请号：US668525

    申请日：1996-06-28

    申请人： Naohiro Toda ,  Yoshiki Nishibayashi ,  Tadashi Tomikawa ,  Shin-ichi Shikata

    发明人： Naohiro Toda ,  Yoshiki Nishibayashi ,  Tadashi Tomikawa ,  Shin-ichi Shikata

    IPC分类号： H01L21/28 ,  H01L21/04 ,  H01L21/285 ,  H01L21/324 ,  H01L29/45 ,  H01L33/34 ,  H01L33/40 ,  H01L31/0312 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40

    CPC分类号： H01L33/40 ,  H01L21/043 ,  H01L29/45 ,  H01L33/34 ,  H01L2924/0002

    摘要： An ohmic electorde of the present invention comprises a contact electrode layer formed on a p-type diamond semiconductor layer formed on a substrate so as to be in ohmic contact with the p-type diamond semiconductor layer and to have low contact resistance and high heat resistance, and a lead electrode layer formed on the contact electrode layer so as to have low lead wire resistance and high heat resistance. Specifically, the contact electrode layer is made of either a carbide of at least one metal selected from a metal group comprising Ti, Zr, and Hf, or a carbide of an alloy containing at least one metal selected from the metal group. Since the carbide of the metal or alloy forming the contact electrode layer is stabler in respect of energy because of reduced formation enthalpy than the metal or alloy itself, it is very unlikely to diffuse. Therefore, little metal or alloy forming the contact electrode layer precipitates on the surface of the lead electrode layer formed on the contact electrode layer, thus improving the device performance, based on the reduced lead wire resistance.

    摘要翻译： 本发明的欧姆电极包括形成在基板上的与p型金刚石半导体层欧姆接触并且具有低接触电阻和高耐热性的p型金刚石半导体层上的接触电极层 以及形成在接触电极层上的引线电极层，以便具有低引线电阻和高耐热性。 具体地，接触电极层由选自由Ti，Zr和Hf的金属组成的至少一种金属的碳化物或含有选自金属中的至少一种金属的合金的碳化物制成。 由于形成接触电极层的金属或合金的碳化物相对于能量而言更稳定，因为与金属或合金本身相比，形成焓降低，所以不可能扩散。 因此，形成接触电极层的少量金属或合金在形成在接触电极层上的引线电极层的表面析出，从​​而基于降低的引线电阻提高器件性能。

    Diamond heat sink comprising synthetic diamond film
    8.
    发明授权
    Diamond heat sink comprising synthetic diamond film 失效
    金刚石散热片包括合成金刚石薄膜

    公开(公告)号：US5663595A

    公开(公告)日：1997-09-02

    申请号：US509569

    申请日：1995-07-31

    申请人： Hiromu Shiomi ,  Hideaki Nakahata ,  Yoshiki Nishibayashi ,  Shin-ichi Shikata

    发明人： Hiromu Shiomi ,  Hideaki Nakahata ,  Yoshiki Nishibayashi ,  Shin-ichi Shikata

    IPC分类号： H01L23/373 ,  H01L23/38 ,  H01L23/34 ,  H01L31/0312

    CPC分类号： H01L23/38 ,  H01L23/3732 ,  H01L2924/0002

    摘要： A diamond heat sink of the present invention comprises:a support layer consisting of substantially undoped vapor phase synthetic diamond;a heat sensitive layer consisting of doped vapor phase synthetic diamond formed on the surface of the support layer;an insulation layer consisting of substantially undoped vapor phase synthetic diamond formed on a predetermined region of the heat sensitive layer; andan electrode formed on the heat sensitive layer. The electrode typically consists of a metal, preferably Ti/Mo/Au or Ti/Pt/Au.The diamond heat sink of the present invention may further include a highly-doped layer for creating Ohmic contacts with the metal electrode, which is made of the vapor phase synthetic diamond having high impurity levels, and which is disposed between the metal electrode and the heat sensitive layer.

    摘要翻译： 本发明的金刚石散热器包括：由基本上未掺杂的气相合成金刚石构成的支撑层; 由在载体层的表面上形成的掺杂气相合成金刚石构成的热敏层; 由形成在热敏层的预定区域上的基本上未掺杂的气相合成金刚石构成的绝缘层; 以及形成在热敏层上的电极。 电极通常由金属，优选Ti / Mo / Au或Ti / Pt / Au组成。 本发明的金刚石散热器还可以包括高掺杂层，用于与金属电极产生欧姆接触，该金属电极由具有高杂质水平的气相合成金刚石制成，并且设置在金属电极和热 敏感层。

    Surface acoustic wave device
    9.
    发明授权
    Surface acoustic wave device 失效
    表面声波装置

    公开(公告)号：US5565725A

    公开(公告)日：1996-10-15

    申请号：US429401

    申请日：1995-04-26

    申请人： Hideaki Nakahata ,  Kenjiro Higaki ,  Satoshi Fujii ,  Akihiro Hachigo ,  Shin-ichi Shikata

    发明人： Hideaki Nakahata ,  Kenjiro Higaki ,  Satoshi Fujii ,  Akihiro Hachigo ,  Shin-ichi Shikata

    IPC分类号： H03H9/145 ,  H03H9/02 ,  H01L41/08

    CPC分类号： H03H9/02582

    摘要： A SAW device which includes at least, diamond, an LiNbO.sub.3 layer disposed on the diamond, and an IDT provided so as to contact the LiNbO.sub.3 layer; and utilizes SAW of an "n-th" mode (n=0, 1 or 2) having a wavelength of .lambda..sub.n (.mu.m), wherein a parameter of kh.sub.1 =2.pi.(t.sub.1 /.lambda..sub.n) is in a specific range provided that the thickness of the LiNbO.sub.3 layer is denoted by t.sub.1 (.mu.m).

    摘要翻译： 至少包括金刚石，设置在金刚石上的LiNbO 3层的SAW器件和设置成与LiNbO 3层接触的IDT; 并且使用波长为λn（μm）的“n”模式（n = 0,1或2）的SAW，其中kh1 =2π（t1 /λn）的参数在特定范围内 条件是LiNbO 3层的厚度由t1（μm）表示。