公开(公告)号：US4801474A

公开(公告)日：1989-01-31

申请号：US1878

申请日：1987-01-09

申请人： Keisha Saitoh ,  Masaaki Hirooka ,  Junichi Hanna ,  Isamu Shimizu

发明人： Keisha Saitoh ,  Masaaki Hirooka ,  Junichi Hanna ,  Isamu Shimizu

IPC分类号： C23C16/452 ,  C23C16/511 ,  H01L21/205 ,  C23C16/00 ,  C23C16/30

CPC分类号： H01L21/0245 ,  C23C16/452 ,  C23C16/511 ,  H01L21/02425 ,  H01L21/02505 ,  H01L21/02532 ,  H01L21/02579 ,  H01L21/0262

摘要： A method for forming a thin multi-layer structure member having at least one of at least one kind of a semiconductor thin film controlled in valence electron and a semiconductor thin film regulated in band gap comprises forming at least one layer of said semiconductor thin films on a substrate by introducing a precursor (B) formed in a decomposition space (B) which becomes the starting material for deposited film formation and an active species (C) formed in a decomposition space (C) which interacts with said precursor (B) separately into a deposition space (A) for forming a thin film to thereby effect chemical reaction through the interaction between said precursor (B) and said active species (C), and forming at least one layer of other thin films by introducing a gaseous starting material (a) for thin film formation and a gaseous halogenic oxidizing agent having the property of oxidation action for said starting material (a) into a reaction space to effect contact therebetween to thereby form chemically a plural number of precursors including precursors under excited state and using at least one precursor of the precursors as the feeding source for the constituent element of the deposited film.

摘要翻译： 一种用于形成具有至少一种受限于价电子的半导体薄膜和限制在带隙中的半导体薄膜中的至少一种的薄多层结构构件的方法包括：将至少一层所述半导体薄膜在 通过引入在分解空间（B）中形成的成为沉积膜形成起始材料的前体（B）和分解空间（C）中形成的与所述前体（B）相互作用的活性物质（C）的基板， 进入用于形成薄膜的沉积空间（A），从而通过所述前体（B）和所述活性物质（C）之间的相互作用进行化学反应，并通过引入气态原料形成至少一层其它薄膜 （a）薄膜形成和具有对所述起始材料（a）具有氧化作用的性质的气态卤素氧化剂进入反应空间以实现其间的接触 reby在化学上形成多种前体，包括在激发态下的前体，并使用前体的至少一种前体作为沉积膜的构成元素的进料源。