公开(公告)号：US20120193596A1

公开(公告)日：2012-08-02

申请号：US13233771

申请日：2011-09-15

申请人： Keisuke NAKAZAWA

发明人： Keisuke NAKAZAWA

IPC分类号： H01L47/00 ,  H01L21/28 ,  H01L29/792

CPC分类号： H01L27/11529

摘要： In accordance with an embodiment, a semiconductor device includes a functional film, first and second trenches, and first and second insulating films. The functional film comprises first and second areas. The first trench is provided in the first area of the functional film and has a first width. The second trench is provided in the second area of the functional film and has a second width larger than the first width. The first insulating film is formed from a polymeric material as a precursor to fill the first trench. The second insulating film has a diameter larger than the first width and is formed from particulates and the polymeric material as precursors. The particulates fill the second trench. The polymeric material fills spaces between the particulates in the second trench and also fills gaps between the particulates and the second trench.

摘要翻译： 根据实施例，半导体器件包括功能膜，第一和第二沟槽以及第一和第二绝缘膜。 功能膜包括第一和第二区域。 第一沟槽设置在功能膜的第一区域中并且具有第一宽度。 第二沟槽设置在功能膜的第二区域中，并且具有大于第一宽度的第二宽度。 第一绝缘膜由作为填充第一沟槽的前体的聚合材料形成。 第二绝缘膜具有大于第一宽度的直径，并且由颗粒和聚合物材料作为前体形成。 颗粒填充第二沟槽。 聚合物材料填充第二沟槽中的微粒之间的空间，并填充微粒和第二沟槽之间的间隙。

公开(公告)号：US20130043563A1

公开(公告)日：2013-02-21

申请号：US13424071

申请日：2012-03-19

申请人： Keisuke NAKAZAWA

发明人： Keisuke NAKAZAWA

IPC分类号： H01L21/02 ,  H01L21/425

CPC分类号： H01L29/7851 ,  H01L29/66795

摘要： According to one embodiment, there is provided a method of manufacturing a semiconductor device. In the method, a substrate portion and a fin portion on the substrate portion are formed. A first silicon oxide film is formed on each side surface of the fin portion. A polysilazane film having an upper surface lower than the upper surface of the first silicon oxide film is formed on each side surface of the first silicon oxide film. The polysilazane film is converted into a silicon oxynitride film. The first silicon oxide film is etched to make the upper surface of the first silicon oxide film not higher than the upper surface of the silicon oxynitride film. A heavily doped semiconductor layer is formed in the fin portion.

摘要翻译： 根据一个实施例，提供一种制造半导体器件的方法。 在该方法中，形成基板部分和基板部分上的散热片部分。 在翅片部分的每个侧表面上形成第一氧化硅膜。 在第一氧化硅膜的每个侧表面上形成具有比第一氧化硅膜的上表面低的上表面的聚硅氮烷膜。 聚硅氮烷膜被转化成氮氧化硅膜。 蚀刻第一氧化硅膜以使第一氧化硅膜的上表面不高于氧氮化硅膜的上表面。 在鳍片部分形成重掺杂的半导体层。

公开(公告)号：US20160155093A1

公开(公告)日：2016-06-02

申请号：US14955884

申请日：2015-12-01

申请人： Yuto SHIBATA ,  Daisuke OKADA ,  Chan GU ,  Keisuke NAKAZAWA ,  Hiroya URUTA ,  Akiko KITAYAMA ,  Yuka SAITO

发明人： Yuto SHIBATA ,  Daisuke OKADA ,  Chan GU ,  Keisuke NAKAZAWA ,  Hiroya URUTA ,  Akiko KITAYAMA ,  Yuka SAITO

IPC分类号： G06Q10/10 ,  G06F21/62 ,  G06Q40/00

CPC分类号： G06Q10/1091 ,  G06F21/35 ,  G06F21/608 ,  G06F21/6218 ,  G06F2221/2101 ,  G06F2221/2117 ,  G06Q40/125

摘要： A main body of the image forming apparatus includes a first user-information storage unit configured to store user information. An information processing terminal includes: a data processing unit configured to acquire attendance information; a user-information processing unit configured to acquire, from the main body of the image forming apparatus, user information of a user who has clocked in determined based on the attendance information and acquire user information read in by the reader from the user-information recording medium for user authentication; and, a second user-information storage unit configured to store the user information of the user who has clocked in. The user-information processing unit being configured to perform user authentication by using the user information stored by the second user-information storage unit and the user information read in by the reader from the user-information recording medium for user authentication.

摘要翻译： 图像形成装置的主体包括：第一用户信息存储单元，被配置为存储用户信息。 信息处理终端包括：数据处理单元，被配置为获取考勤信息; 用户信息处理单元，被配置为从所述图像形成装置的主体获取基于所述考勤信息确定的已经计时的用户的用户信息，并且从所述用户信息记录获取由所述读取器读入的用户信息 用于用户认证的介质; 以及第二用户信息存储单元，其被配置为存储已经记录的用户的用户信息。所述用户信息处理单元被配置为通过使用由所述第二用户信息存储单元存储的用户信息来执行用户认证，以及 读取器从用户信息记录介质读取的用户信息进行用户认证。

公开(公告)号：US20160150123A1

公开(公告)日：2016-05-26

申请号：US14942234

申请日：2015-11-16

申请人： Daisuke OKADA ,  Hiroya URUTA ,  Yuka SAITO ,  Akiko KITAYAMA ,  Yuto SHIBATA ,  Chan GU ,  Keisuke NAKAZAWA

发明人： Daisuke OKADA ,  Hiroya URUTA ,  Yuka SAITO ,  Akiko KITAYAMA ,  Yuto SHIBATA ,  Chan GU ,  Keisuke NAKAZAWA

IPC分类号： H04N1/32 ,  H04N1/00

CPC分类号： H04N1/32368 ,  G06Q10/00 ,  H04N1/00477 ,  H04N2201/0013 ,  H04N2201/0093

摘要： An information processing system includes a first information processing apparatus and a second information processing apparatus. The first information processing apparatus includes an acquisition part creating a first information request, a first transmitter transmitting the first information request to the second information processing apparatus, a first receiver receiving the first information from the second information processing apparatus, a display controller controlling displaying the first information, and a first storage storing second information, the display controller controlling displaying the second information when the second information is stored in the first storage. The second information processing apparatus includes a second storage storing the first information, a second receiver receiving the first information request, an extracting part extracting the first information from the second storage in response to the first information request, and a second transmitter transmitting the first information to the first information processing apparatus.

摘要翻译： 信息处理系统包括第一信息处理装置和第二信息处理装置。 第一信息处理设备包括创建第一信息请求的获取部分，向第二信息处理设备发送第一信息请求的第一发送器，从第二信息处理设备接收第一信息的第一接收器，控制显示第 第一信息和存储第二信息的第一存储器，当第二信息被存储在第一存储器中时，显示控制器控制显示第二信息。 第二信息处理装置包括存储第一信息的第二存储器，接收第一信息请求的第二接收机，响应于第一信息请求从第二存储器提取第一信息的提取部分，以及发送第一信息的第二发送器 到第一信息处理设备。

公开(公告)号：US20130115766A1

公开(公告)日：2013-05-09

申请号：US13425592

申请日：2012-03-21

申请人： Keisuke NAKAZAWA

发明人： Keisuke NAKAZAWA

IPC分类号： H01L21/28

CPC分类号： H01L27/11524 ,  H01L21/764

摘要： According to one embodiment, a method of manufacturing a semiconductor device is provided. In the method, a tunnel insulating film and a first conductive film are formed on a semiconductor layer. A trench is formed. A first sacrifice film is buried in the trench. A second sacrifice film having density higher than that of the first sacrifice film is formed on the first sacrifice film in the trench. An insulating film is formed on the first conductive film and the second sacrifice film. A second conductive film is formed on the insulating film. The second sacrifice film is exposed. The first sacrifice film and the second sacrifice film are removed.

摘要翻译： 根据一个实施例，提供一种制造半导体器件的方法。 在该方法中，在半导体层上形成隧道绝缘膜和第一导电膜。 形成沟槽。 第一把牺牲电影埋在沟里。 在沟槽中的第一牺牲膜上形成密度高于第一牺牲膜的第二牺牲膜。 在第一导电膜和第二牺牲膜上形成绝缘膜。 在绝缘膜上形成第二导电膜。 第二件牺牲片暴露出来。 第一牺牲膜和第二牺牲膜被去除。

公开(公告)号：US20120286346A1

公开(公告)日：2012-11-15

申请号：US13309730

申请日：2011-12-02

申请人： Keisuke NAKAZAWA

发明人： Keisuke NAKAZAWA

IPC分类号： H01L29/788 ,  H01L29/78 ,  H01L21/762 ,  H01L29/06

CPC分类号： H01L29/7881 ,  H01L21/76224 ,  H01L21/76227 ,  H01L29/66795 ,  H01L29/66825 ,  H01L29/785

摘要： According to one embodiment, a semiconductor device includes a semiconductor substrate, a trench formed in an element isolating area of the semiconductor substrate, and a silicon oxide film that is embedded in the trench and contains an alkali metal element or alkali earth metal element.

摘要翻译： 根据一个实施例，半导体器件包括半导体衬底，形成在半导体衬底的元件隔离区域中的沟槽和埋入沟槽中并含有碱金属元素或碱土金属元素的氧化硅膜。

公开(公告)号：US20180063367A1

公开(公告)日：2018-03-01

申请号：US15558311

申请日：2016-04-25

申请人： Akiko KITAYAMA ,  Yuto SHIBATA ,  Keisuke NAKAZAWA

发明人： Akiko KITAYAMA ,  Yuto SHIBATA ,  Keisuke NAKAZAWA

IPC分类号： H04N1/327 ,  G03G15/00 ,  B41J29/393 ,  H04N1/32

CPC分类号： H04N1/32771 ,  B41J29/393 ,  G03G15/5016 ,  G03G15/5087 ,  G06F3/121 ,  G06F3/1234 ,  G06F3/1236 ,  G06F3/1267 ,  G06F3/1284 ,  H04N1/32122 ,  H04N2201/0094 ,  H04N2201/3202 ,  H04N2201/3207

摘要： An information processing system includes a first information processing device and a second information processing device that operates based on a request received from the first information processing device. The first information processing device includes a processor configured to implement a storage unit that stores a portion of information stored in the second information processing device, and a first communication control unit that transmits a job execution request to the second information processing device based on the stored information. When a communication connection between the first and second information processing devices is not established, the transmission of the job execution request is controlled to transmit the job execution request based on the portion of the information after the communication connection is established. The second information processing device executes a predetermined job based on the job execution request received from the first information processing device.

公开(公告)号：US20130102124A1

公开(公告)日：2013-04-25

申请号：US13409401

申请日：2012-03-01

申请人： Keisuke NAKAZAWA

发明人： Keisuke NAKAZAWA

IPC分类号： H01L21/764

CPC分类号： H01L21/764

摘要： In one embodiment, a method of manufacturing a semiconductor device includes forming an isolation trench in a substrate, and forming an amorphous layer on a sidewall surface of the isolation trench. The method further includes forming a sacrificial layer in the isolation trench via the amorphous layer, and forming an air gap layer on the sacrificial layer. The method further includes forming an air gap in the isolation trench under the air gap layer by removing the sacrificial layer after forming the air gap layer.

摘要翻译： 在一个实施例中，制造半导体器件的方法包括在衬底中形成隔离沟槽，以及在隔离沟槽的侧壁表面上形成非晶层。 该方法还包括经由非晶层在隔离沟槽中形成牺牲层，并在牺牲层上形成气隙层。 该方法还包括在形成气隙层之后通过去除牺牲层在气隙层之下的隔离沟槽中形成气隙。