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    Semiconductor device and manufacturing method thereof
    1.
    发明授权
    Semiconductor device and manufacturing method thereof 有权
    半导体装置及其制造方法

    公开(公告)号：US08592939B2

    公开(公告)日：2013-11-26

    申请号：US13233771

    申请日：2011-09-15

    申请人： Keisuke Nakazawa

    发明人： Keisuke Nakazawa

    IPC分类号： H01L21/70

    CPC分类号： H01L27/11529

    摘要： In accordance with an embodiment, a semiconductor device includes a functional film, first and second trenches, and first and second insulating films. The functional film comprises first and second areas. The first trench is provided in the first area of the functional film and has a first width. The second trench is provided in the second area of the functional film and has a second width larger than the first width. The first insulating film is formed from a polymeric material as a precursor to fill the first trench. The second insulating film has a diameter larger than the first width and is formed from particulates and the polymeric material as precursors. The particulates fill the second trench. The polymeric material fills spaces between the particulates in the second trench and also fills gaps between the particulates and the second trench.

    摘要翻译： 根据实施例，半导体器件包括功能膜，第一和第二沟槽以及第一和第二绝缘膜。 功能膜包括第一和第二区域。 第一沟槽设置在功能膜的第一区域中并且具有第一宽度。 第二沟槽设置在功能膜的第二区域中，并且具有大于第一宽度的第二宽度。 第一绝缘膜由作为填充第一沟槽的前体的聚合材料形成。 第二绝缘膜具有大于第一宽度的直径，并且由颗粒和聚合物材料作为前体形成。 颗粒填充第二沟槽。 聚合物材料填充第二沟槽中的微粒之间的空间，并填充微粒和第二沟槽之间的间隙。

    SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
    2.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
    半导体器件及其制造方法

    公开(公告)号：US20130043563A1

    公开(公告)日：2013-02-21

    申请号：US13424071

    申请日：2012-03-19

    申请人： Keisuke NAKAZAWA

    发明人： Keisuke NAKAZAWA

    IPC分类号： H01L21/02 ,  H01L21/425

    CPC分类号： H01L29/7851 ,  H01L29/66795

    摘要： According to one embodiment, there is provided a method of manufacturing a semiconductor device. In the method, a substrate portion and a fin portion on the substrate portion are formed. A first silicon oxide film is formed on each side surface of the fin portion. A polysilazane film having an upper surface lower than the upper surface of the first silicon oxide film is formed on each side surface of the first silicon oxide film. The polysilazane film is converted into a silicon oxynitride film. The first silicon oxide film is etched to make the upper surface of the first silicon oxide film not higher than the upper surface of the silicon oxynitride film. A heavily doped semiconductor layer is formed in the fin portion.

    摘要翻译： 根据一个实施例，提供一种制造半导体器件的方法。 在该方法中，形成基板部分和基板部分上的散热片部分。 在翅片部分的每个侧表面上形成第一氧化硅膜。 在第一氧化硅膜的每个侧表面上形成具有比第一氧化硅膜的上表面低的上表面的聚硅氮烷膜。 聚硅氮烷膜被转化成氮氧化硅膜。 蚀刻第一氧化硅膜以使第一氧化硅膜的上表面不高于氧氮化硅膜的上表面。 在鳍片部分形成重掺杂的半导体层。

    Method for manufacturing semiconductor device and NAND-type flash memory
    3.
    发明授权
    Method for manufacturing semiconductor device and NAND-type flash memory 有权
    制造半导体器件和NAND型闪存的方法

    公开(公告)号：US08329553B2

    公开(公告)日：2012-12-11

    申请号：US12730099

    申请日：2010-03-23

    申请人： Shogo Matsuo ,  Takeshi Hoshi ,  Keisuke Nakazawa ,  Kazuaki Iwasawa

    发明人： Shogo Matsuo ,  Takeshi Hoshi ,  Keisuke Nakazawa ,  Kazuaki Iwasawa

    IPC分类号： H01L21/76

    CPC分类号： H01L21/76229 ,  H01L21/02164 ,  H01L21/02323 ,  H01L21/02343 ,  H01L21/3081 ,  H01L21/3124 ,  H01L21/3125 ,  H01L21/316 ,  H01L27/11531 ,  H01L27/11543 ,  H01L27/11548

    摘要： A method for manufacturing semiconductor device has forming a plurality of trenches having at least two kinds of aspect ratios on a semiconductor substrate, filling the plurality of trenches with a coating material containing silicon, forming a mask on the coating material in a part of the trenches among the plurality of trenches filled with the coating material, implanting an ion for accelerating oxidation of the coating material into the coating material in the trenches on which the mask is not formed, forming a first insulating film by oxidizing the coating materials into which the ion is implanted, removing the coating material from the part of the trenches after removing the mask and forming a second insulating film in the part of the trenches from which the coating material is removed.

    摘要翻译： 半导体器件的制造方法在半导体衬底上形成具有至少两种纵横比的多个沟槽，用包含硅的涂层材料填充多个沟槽，在沟槽的一部分中在涂层材料上形成掩模 在填充有涂层材料的多个沟槽中，将用于加速氧化涂层材料的离子注入到未形成掩模的沟槽中的涂层材料中，通过氧化其中离子的涂层材料形成第一绝缘膜 在移除掩模之后从沟槽的一部分去除涂层材料，并在去除涂层材料的沟槽部分中形成第二绝缘膜。

    Method of manufacturing semiconductor device
    4.
    发明授权
    Method of manufacturing semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号：US07781341B2

    公开(公告)日：2010-08-24

    申请号：US11526727

    申请日：2006-09-26

    申请人： Keisuke Nakazawa

    发明人： Keisuke Nakazawa

    IPC分类号： H01L21/302

    CPC分类号： H01L21/3125 ,  C23C18/122 ,  C23C18/1279 ,  H01L21/02087 ,  H01L21/0209 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02222 ,  H01L21/02282 ,  H01L21/02326 ,  H01L21/02337 ,  H01L21/31133 ,  H01L21/316 ,  H01L21/67051 ,  H01L21/6715 ,  H01L21/76801 ,  H01L21/76826 ,  H01L21/76828

    摘要： A method for manufacturing a semiconductor device is provided, which includes feeding a coating liquid comprising a silicon-containing compound dissolved in a solvent onto a semiconductor substrate, revolving the semiconductor substrate to form a coated film containing the silicon-containing compound, feeding a rinsing liquid at least partially comprising α-pinene onto the underside of the semiconductor substrate to perform back-rinsing and washing of the underside of the semiconductor substrate, drying the semiconductor substrate that has been back-rinsed to remove the rinsing liquid, and heat-treating the semiconductor substrate to remove the solvent from the coated film to obtain an insulating film containing the silicon-containing compound.

    摘要翻译： 提供一种制造半导体器件的方法，其包括将包含溶解在溶剂中的含硅化合物的涂布液进料到半导体衬底上，旋转半导体衬底以形成含有含硅化合物的涂膜， 至少部分地包含α-蒎烯的液体到半导体衬底的下侧，以对半导体衬底的下侧进行反冲洗和洗涤，干燥已经被冲洗的半导体衬底以去除冲洗液体，并进行热处理 半导体衬底以从涂覆膜中除去溶剂，以获得含有含硅化合物的绝缘膜。

    Method for manufacturing semiconductor device
    6.
    发明授权
    Method for manufacturing semiconductor device 失效
    制造半导体器件的方法

    公开(公告)号：US07378329B2

    公开(公告)日：2008-05-27

    申请号：US10933227

    申请日：2004-09-03

    申请人： Keisuke Nakazawa ,  Soichi Yamazaki

    发明人： Keisuke Nakazawa ,  Soichi Yamazaki

    IPC分类号： H01G7/06

    CPC分类号： H01L27/11502 ,  H01L27/11507 ,  H01L28/57 ,  H01L28/65

    摘要： Disclosed is a method for manufacturing a semiconductor device, comprising forming an insulating film above a semiconductor substrate having an element formed thereon, forming an anti-reflection layer that is impermeable to hydrogen on the insulating film, the anti-reflection layer comprising a layer formed of at least one material selected from the group consisting of silicon nitride, silicon oxynitride, chromium oxide, CrOxFy, CrAlxOy, AlSixOy, ZrSixOy, silicon oxycarbide, carbon, chromium nitride, titanium nitride, tantalum nitride, aluminum nitride, TiAlxNy, TaAlxNy, TiSixNy, AlSixNy (where x and y denote the component ratio), and silicon carbide, forming a resist pattern on the anti-reflection layer, forming a hole in the insulating film with the resist pattern used as a mask, burying a conductive material in the hole to form a plug, removing the resist pattern, and forming a ferroelectric capacitor above the anti-reflection layer.

    摘要翻译： 公开了一种制造半导体器件的方法，包括在其上形成有元件的半导体衬底之上形成绝缘膜，形成在绝缘膜上不透氢的抗反射层，抗反射层包括形成的层 的至少一种选自氮化硅，氮氧化硅，氧化铬，CrO x x Y x O，CrAl x x O的材料， 氧化硅，碳硅，碳化硅，碳化硅，碳化硅，碳化硅，碳化硅，碳化硅，碳化硅， ，氮化铬，氮化钛，氮化钽，氮化铝，TiAl x x N y， ，其中x和y表示组分的比例），和 碳化硅，在抗反射层上形成抗蚀剂图案，在绝缘膜上形成孔，将抗蚀图案用作掩模，将导电材料i 在孔中形成塞子，去除抗蚀剂图案，并在抗反射层之上形成铁电电容器。