公开(公告)号：US20120321791A1

公开(公告)日：2012-12-20

申请号：US13524285

申请日：2012-06-15

申请人： Keisuke SUZUKI ,  Kentaro KADONAGA ,  Yoshitaka MORI

发明人： Keisuke SUZUKI ,  Kentaro KADONAGA ,  Yoshitaka MORI

IPC分类号： C23C16/455 ,  C23C16/36 ,  C23C16/38

CPC分类号： C23C16/345 ,  C23C16/342 ,  C23C16/36 ,  C23C16/45529 ,  C23C16/45578

摘要： A film forming method for forming a thin film including boron, nitrogen, silicon, and carbon on a surface of a processing target by supplying a boron containing gas, a nitriding gas, a silane-based gas, and a hydrocarbon gas in a processing container in which the processing target is accommodated to be vacuum sucked includes: a first process which forms a BN film by performing a cycle of alternately and intermittently supplying the boron-containing gas and the nitriding gas once or more; and a second process which forms a SiCN film by performing a cycle of intermittently supplying the silane-based gas, the hydrocarbon gas, and the nitriding gas once or more. Accordingly, the thin film including boron, nitrogen, silicon, and carbon with a low-k dielectric constant, an improved wet-etching resistance, and a reduced leak current can be formed.

摘要翻译： 一种通过在处理容器中提供含硼气体，氮化气体，硅烷类气体和烃气体来在加工对象的表面上形成包含硼，氮，硅和碳的薄膜的成膜方法， 其中处理目标被容纳以被真空吸取的步骤包括：通过执行交替地和间歇地供给含硼气体和氮化气体一次或多次的循环来形成BN膜的第一工艺; 以及通过进行间歇地供给硅烷系气体，烃气体和氮化气体一次以上的循环来形成SiCN膜的第二工序。 因此，可以形成包括具有低k介电常数的硼，氮，硅和碳的薄膜，改善的耐湿蚀刻电阻和减小的漏电流。

公开(公告)号：US20130037873A1

公开(公告)日：2013-02-14

申请号：US13571559

申请日：2012-08-10

申请人： Keisuke SUZUKI ,  Kentaro KADONAGA ,  Yuichiro MOROZUMI

发明人： Keisuke SUZUKI ,  Kentaro KADONAGA ,  Yuichiro MOROZUMI

IPC分类号： H01L21/02 ,  C23C16/50 ,  H01L27/06 ,  C23C16/34

CPC分类号： H01L28/91 ,  C23C16/345 ,  C23C16/45531 ,  C23C16/45542 ,  C23C16/45578 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/0228 ,  H01L27/10852

摘要： Provided is a semiconductor device capable of preventing destruction of an electrode having a pillar shape and densely arranged. The semiconductor device having a field-effect transistor and a capacitor having a pillar shape, the semiconductor device includes: a first electrode having a pillar shape and electrically connected to an impurity diffusion region of the field-effect transistor; a dielectric film formed at least on a side of the first electrode; a second electrode formed on the dielectric film; and a support film extending in a direction crossing a length direction of the first electrode having the pillar shape, and formed by a boron-added silicon nitride film connected to the first electrode by penetrating through at least a part of the second electrode.

摘要翻译： 提供能够防止具有柱状并且密集布置的电极的破坏的半导体器件。 具有场效应晶体管和具有柱状电容器的半导体器件，该半导体器件包括：具有柱状并与该场效应晶体管的杂质扩散区电连接的第一电极; 至少在所述第一电极的一侧形成的电介质膜; 形成在电介质膜上的第二电极; 以及在与具有柱状的第一电极的长度方向交叉的方向上延伸的支撑膜，并且通过贯穿第二电极的至少一部分而与第一电极连接的添加硼的氮化硅膜形成。

公开(公告)号：US20190039658A1

公开(公告)日：2019-02-07

申请号：US16046424

申请日：2018-07-26

申请人： Yoshimitsu YOKOI ,  Shinichirou MUROFUSHI ,  Keisuke SUZUKI ,  Yasunori YAMADA ,  Tetsuya SHINOHARA ,  Kenji TAKADA ,  Shigeaki KITAMURA ,  Hironao ITO

发明人： Yoshimitsu YOKOI ,  Shinichirou MUROFUSHI ,  Keisuke SUZUKI ,  Yasunori YAMADA ,  Tetsuya SHINOHARA ,  Kenji TAKADA ,  Shigeaki KITAMURA ,  Hironao ITO

IPC分类号： B62D25/04 ,  B62D25/06 ,  B62D29/00 ,  B32B3/12 ,  B32B3/28 ,  B32B5/20 ,  B32B15/04 ,  B32B27/06 ,  B32B27/34

CPC分类号： B62D25/04 ,  B32B3/12 ,  B32B3/28 ,  B32B5/20 ,  B32B15/046 ,  B32B27/065 ,  B32B27/34 ,  B32B2266/0271 ,  B32B2266/0278 ,  B32B2307/558 ,  B32B2605/08 ,  B62D21/157 ,  B62D25/06 ,  B62D29/002 ,  B62D29/005

摘要： A body frame structure forming a side part of an automobile includes an outer panel, an inner panel that forms a closed space elongated in a first direction between the inner panel and the outer panel, a metal outer R/F disposed within the closed space, a resin R/F disposed within the closed space, and a foam disposed within the closed space. The closed space includes a three-layer structure including the outer R/F, the resin R/F, and the foam filling a space between the outer R/F and the resin R/F.

公开(公告)号：US20120269969A1

公开(公告)日：2012-10-25

申请号：US13401919

申请日：2012-02-22

申请人： Keisuke SUZUKI ,  Pao-Hwa Chou ,  Te Ching Chang

发明人： Keisuke SUZUKI ,  Pao-Hwa Chou ,  Te Ching Chang

IPC分类号： C23C16/455

CPC分类号： H01L21/0228 ,  C23C16/345 ,  C23C16/45527 ,  C23C16/52 ,  H01L21/0217

摘要： A film deposition method of depositing a thin film by alternately supplying at least a first source gas and a second source gas to a substrate is disclosed. The film deposition method includes steps of evacuating a process chamber where the substrate is accommodated, without supplying any gas to the process chamber; supplying an inert gas to the process chamber until a pressure within the process chamber becomes a predetermined pressure; supplying the first source gas to the process chamber filled with the inert gas at the predetermined pressure without evacuating the process chamber; stopping supplying the first source gas to the process chamber and evacuating the process chamber; supplying the second source gas to the process chamber; and stopping supplying the second source gas to the process chamber and evacuating the process chamber.

摘要翻译： 公开了一种通过交替地将至少第一源气体和第二源气体供应到基底而沉积薄膜的成膜方法。 膜沉积方法包括以下步骤：将处理室排出到容纳基板的步骤，而不向处理室供应任何气体; 向所述处理室供应惰性气体，直到所述处理室内的压力变为预定压力; 将第一源气体以预定压力供给到填充有惰性气体的处理室，而不需要排空处理室; 停止向处理室供应第一源气体并抽空处理室; 将第二源气体供应到处理室; 并停止向处理室供应第二源气体并抽空处理室。

公开(公告)号：US20100023912A1

公开(公告)日：2010-01-28

申请号：US12480167

申请日：2009-06-08

申请人： Keisuke SUZUKI

发明人： Keisuke SUZUKI

IPC分类号： G06F17/50

CPC分类号： G06F17/5036

摘要： A lead frame design support apparatus and method include measuring a signal waveform transition time, calculating a distributed parameter unit length based on the transition time measured, calculating a division number for a lead frame by dividing the lead frame by the distributed parameter unit length calculated, and determining a respective line width for each lead frame divided by the division number calculated, based on a signal waveform quality.

摘要翻译： 引线框设计支持装置和方法包括测量信号波形转换时间，基于所测量的转换时间计算分布参数单位长度，通过将引导帧除以所计算的分布参数单位长度来计算引导帧的分割数， 以及基于信号波形质量，确定每个引线框的相应线宽除以所计算的分割数。