摘要:
The present invention relates to an agent for improving renal dysfunction comprising as an active ingredient a compound represented by the following formula (1): wherein each R1, R2, and R3 represents a hydrogen atom or a methyl group, and X represents a linear or branched alkylene or alkenylene group having 10 to 28 carbon atoms.
摘要:
The present invention relates to an agent for improving renal dysfunction comprising as an active ingredient a compound represented by the following formula (1): wherein each R1, R2, and R3 represents a hydrogen atom or a methyl group, and X represents a linear or branched alkylene or alkenylene group having 10 to 28 carbon atoms.
摘要翻译:本发明涉及一种用于改善肾功能障碍的药物,其包含作为活性成分的由下式(1)表示的化合物:其中每个R 1,R 2,和 R 3表示氢原子或甲基,X表示碳原子数为10〜28的直链或支链亚烷基或亚链烯基。
摘要:
A high-pressure discharge lamp lighting device includes: a power converter circuit which includes a plurality of switching elements and an inductance element, converts an input from a DC power supply, and supplies a rectangular wave AC output to a high-pressure discharge lamp; and a control circuit which controls the switching elements of the power converter circuit. The control circuit performs first lighting control in which the switching elements of the power converter circuit are controlled in order to supply a current to a peak value for each switching cycle, and performs second lighting control in which desired power is supplied during steadily lighting state of the high-pressure discharge lamp; and the first lighting control and the second lighting control are switched over in response to a lighting state of the high-pressure discharge lamp.
摘要:
A three-dimensional filter includes a pair of superconductor films opposed to each other, and a three-dimensional resonator made of dielectric and situated between the superconductor films, wherein one of the superconductor films is movable relative to the three-dimensional resonator.
摘要:
The semiconductor device includes a substrate, a first semiconductor element, a second semiconductor element, a first heat sink and a second heat sink. The first and the second semiconductor elements are provided on the substrate. The maximum power consumption of the first semiconductor element is lower than that of the second semiconductor element. The first heat sink is fixed to the first semiconductor element. The second heat sink is fixed to the second semiconductor element. The first heat sink is spaced apart from the second heat sink.
摘要:
A semiconductor device 1 includes a substrate 10, a semiconductor chip 20 (first semiconductor chip), semiconductor chips 30 (second semiconductor chips) and a heat sink 40. Semiconductor chips 20 and 30 are mounted on the substrate 10. The level of the top surface of the semiconductor chip 20 on the substrate 10 is lower than the level of the top surface of the semiconductor chip 30. A heat sink 40 is fixed to the semiconductor chip 20. Among the semiconductor chip 20 and the semiconductor chips 30, only above the semiconductor chip 20 is provided with the heat sink 40.
摘要:
A high-pressure discharge lamp lighting device includes: a power converter circuit which includes a plurality of switching elements and an inductance element, converts an input from a DC power supply, and supplies a rectangular wave AC output to a high-pressure discharge lamp; and a control circuit which controls the switching elements of the power converter circuit. The control circuit performs first lighting control in which the switching elements of the power converter circuit are controlled in order to supply a current to a peak value for each switching cycle, and performs second lighting control in which desired power is supplied during steadily lighting state of the high-pressure discharge lamp; and the first lighting control and the second lighting control are switched over in response to a lighting state of the high-pressure discharge lamp.
摘要:
An object of the present invention is to allow the three primary colors of light (red, green, blue) to be emitted, and particularly to allow blue light to be emitted clearly and in a stable manner at a low voltage. An amorphous SiOx film 2 consisting of a mixture of silicon atoms and oxygen atoms is formed on a semiconductor substrate 1. The result is heat treated in an inert gas to form the silicon atoms into nanosilicon 4a of about 3.0 nm or less. The result is subjected to hydrofluoric acid aqueous solution treatment 5 and thermal oxidation treatment 6. Any of the three primary colors of light, particularly blue, can be emitted at a low operating voltage 7 at room temperature.
摘要:
A core layer of an optical waveguide is grown as a film comprised of an electro-optic material with a rhombohedral structure and grown above a substrate with (100) crystal orientation on a major face.