AMELIORANT FOR RENAL INSUFFICIENCY
    1.
    发明申请
    AMELIORANT FOR RENAL INSUFFICIENCY 审中-公开
    不良反应不良

    公开(公告)号:US20120136068A1

    公开(公告)日:2012-05-31

    申请号:US13367713

    申请日:2012-02-07

    IPC分类号: A61K31/122 A61P13/12

    CPC分类号: A61K31/122

    摘要: The present invention relates to an agent for improving renal dysfunction comprising as an active ingredient a compound represented by the following formula (1): wherein each R1, R2, and R3 represents a hydrogen atom or a methyl group, and X represents a linear or branched alkylene or alkenylene group having 10 to 28 carbon atoms.

    摘要翻译: 本发明涉及一种用于改善肾功能障碍的药物,其包含作为活性成分的由下式(1)表示的化合物:其中每个R 1,R 2和R 3表示氢原子或甲基,X表示直链或 具有10-28个碳原子的支链亚烷基或亚烯基。

    High-pressure discharge lamp lighting device and lighting fixture using the same
    3.
    发明授权
    High-pressure discharge lamp lighting device and lighting fixture using the same 有权
    高压放电灯照明装置和照明灯具使用相同

    公开(公告)号:US08395327B2

    公开(公告)日:2013-03-12

    申请号:US12373387

    申请日:2007-04-19

    IPC分类号: H05B41/282

    摘要: A high-pressure discharge lamp lighting device includes: a power converter circuit which includes a plurality of switching elements and an inductance element, converts an input from a DC power supply, and supplies a rectangular wave AC output to a high-pressure discharge lamp; and a control circuit which controls the switching elements of the power converter circuit. The control circuit performs first lighting control in which the switching elements of the power converter circuit are controlled in order to supply a current to a peak value for each switching cycle, and performs second lighting control in which desired power is supplied during steadily lighting state of the high-pressure discharge lamp; and the first lighting control and the second lighting control are switched over in response to a lighting state of the high-pressure discharge lamp.

    摘要翻译: 高压放电灯点亮装置包括:功率转换器电路,其包括多个开关元件和电感元件,对来自直流电源的输入进行转换,并将矩形波交流输出提供给高压放电灯; 以及控制电路,其控制功率转换器电路的开关元件。 控制电路进行第一照明控制,其中控制功率转换器电路的开关元件,以便为每个开关周期提供电流至峰值,并且在稳定点亮状态期间进行提供期望功率的第二次点亮控制 高压放电灯; 并且响应于高压放电灯的点亮状态切换第一照明控制和第二照明控制。

    Semiconductor device having improved heat sink
    5.
    发明授权
    Semiconductor device having improved heat sink 有权
    具有改进的散热器的半导体器件

    公开(公告)号:US08120172B2

    公开(公告)日:2012-02-21

    申请号:US12972993

    申请日:2010-12-20

    申请人: Keisuke Sato

    发明人: Keisuke Sato

    IPC分类号: H01L23/34

    摘要: The semiconductor device includes a substrate, a first semiconductor element, a second semiconductor element, a first heat sink and a second heat sink. The first and the second semiconductor elements are provided on the substrate. The maximum power consumption of the first semiconductor element is lower than that of the second semiconductor element. The first heat sink is fixed to the first semiconductor element. The second heat sink is fixed to the second semiconductor element. The first heat sink is spaced apart from the second heat sink.

    摘要翻译: 半导体器件包括衬底,第一半导体元件,第二半导体元件,第一散热器和第二散热器。 第一和第二半导体元件设置在基板上。 第一半导体元件的最大功率消耗低于第二半导体元件的功耗。 第一散热器固定到第一半导体元件。 第二散热器固定到第二半导体元件。 第一散热器与第二散热器间隔开。

    Semiconductor device
    7.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号:US07649253B2

    公开(公告)日:2010-01-19

    申请号:US11512228

    申请日:2006-08-30

    申请人: Keisuke Sato

    发明人: Keisuke Sato

    IPC分类号: H01L23/10

    摘要: A semiconductor device 1 includes a substrate 10, a semiconductor chip 20 (first semiconductor chip), semiconductor chips 30 (second semiconductor chips) and a heat sink 40. Semiconductor chips 20 and 30 are mounted on the substrate 10. The level of the top surface of the semiconductor chip 20 on the substrate 10 is lower than the level of the top surface of the semiconductor chip 30. A heat sink 40 is fixed to the semiconductor chip 20. Among the semiconductor chip 20 and the semiconductor chips 30, only above the semiconductor chip 20 is provided with the heat sink 40.

    摘要翻译: 半导体器件1包括衬底10,半导体芯片20(第一半导体芯片),半导体芯片30(第二半导体芯片)和散热器40.半导体芯片20和30安装在衬底10上。顶部的电平 衬底10上的半导体芯片20的表面比半导体芯片30的顶表面的电平低。散热器40固定到半导体芯片20.在半导体芯片20和半导体芯片30之中,仅在上面 半导体芯片20设置有散热器40。

    HIGH-PRESSURE DISCHARGE LAMP LIGHTING DEVICE AND LIGHTING FIXTURE USING THE SAME
    8.
    发明申请
    HIGH-PRESSURE DISCHARGE LAMP LIGHTING DEVICE AND LIGHTING FIXTURE USING THE SAME 有权
    高压放电灯照明装置和使用其的照明装置

    公开(公告)号:US20090315470A1

    公开(公告)日:2009-12-24

    申请号:US12373387

    申请日:2007-04-19

    IPC分类号: H05B41/282

    摘要: A high-pressure discharge lamp lighting device includes: a power converter circuit which includes a plurality of switching elements and an inductance element, converts an input from a DC power supply, and supplies a rectangular wave AC output to a high-pressure discharge lamp; and a control circuit which controls the switching elements of the power converter circuit. The control circuit performs first lighting control in which the switching elements of the power converter circuit are controlled in order to supply a current to a peak value for each switching cycle, and performs second lighting control in which desired power is supplied during steadily lighting state of the high-pressure discharge lamp; and the first lighting control and the second lighting control are switched over in response to a lighting state of the high-pressure discharge lamp.

    摘要翻译: 高压放电灯点亮装置包括:功率转换器电路,其包括多个开关元件和电感元件,对来自直流电源的输入进行转换,并将矩形波交流输出提供给高压放电灯; 以及控制电路,其控制功率转换器电路的开关元件。 控制电路进行第一照明控制,其中控制功率转换器电路的开关元件,以便为每个开关周期提供电流至峰值,并且在稳定点亮状态期间进行提供期望功率的第二次点亮控制 高压放电灯; 并且响应于高压放电灯的点亮状态切换第一照明控制和第二照明控制。

    Nanosilicon light-emitting element and manufacturing method thereof
    9.
    发明授权
    Nanosilicon light-emitting element and manufacturing method thereof 失效
    纳米硅发光元件及其制造方法

    公开(公告)号:US07132692B2

    公开(公告)日:2006-11-07

    申请号:US10806377

    申请日:2004-03-23

    IPC分类号: H01L31/12

    摘要: An object of the present invention is to allow the three primary colors of light (red, green, blue) to be emitted, and particularly to allow blue light to be emitted clearly and in a stable manner at a low voltage. An amorphous SiOx film 2 consisting of a mixture of silicon atoms and oxygen atoms is formed on a semiconductor substrate 1. The result is heat treated in an inert gas to form the silicon atoms into nanosilicon 4a of about 3.0 nm or less. The result is subjected to hydrofluoric acid aqueous solution treatment 5 and thermal oxidation treatment 6. Any of the three primary colors of light, particularly blue, can be emitted at a low operating voltage 7 at room temperature.

    摘要翻译: 本发明的目的是允许发出三原色(红色,绿色,蓝色),特别是允许蓝色光以低电压稳定地发出。 在半导体衬底1上形成由硅原子和氧原子的混合物构成的非晶SiO 2膜2。 其结果是在惰性气体中进行热处理以形成硅原子至约3.0nm或更小的纳米硅。 结果进行氢氟酸水溶液处理5和热氧化处理6。 光,特别是蓝色的三原色中的任何一种可以在室温下以低工作电压7发射。