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    Methods and apparatus for processing substrates using model-based control
    1.
    发明授权
    Methods and apparatus for processing substrates using model-based control 有权
    使用基于模型的控制处理基板的方法和装置

    公开(公告)号：US08880210B2

    公开(公告)日：2014-11-04

    申请号：US13183520

    申请日：2011-07-15

    申请人： Keith Brian Porthouse ,  John W. Lane ,  Mariusch Gregor ,  Nir Merry ,  Michael R. Rice ,  Alex Minkovich ,  Hongbin Li ,  Dmitry A. Dzilno

    发明人： Keith Brian Porthouse ,  John W. Lane ,  Mariusch Gregor ,  Nir Merry ,  Michael R. Rice ,  Alex Minkovich ,  Hongbin Li ,  Dmitry A. Dzilno

    IPC分类号： G06F19/00 ,  G05B17/02 ,  H01L21/67 ,  G05D16/20

    CPC分类号： G05D16/2046 ,  G05B17/02 ,  H01L21/67017 ,  H01L21/67253

    摘要： Methods and apparatus are disclosed herein. In some embodiments, methods of controlling process chambers may include predetermining a relationship between pressure in a processing volume and a position of an exhaust valve as a function of a process parameter; setting the process chamber to a first state having a first pressure in the processing volume and a first value of the process parameter, wherein the exhaust valve is set to a first position based on the predetermined relationship to produce the first pressure at the first value; determining a pressure control profile to control the pressure as the process chamber is changed to a second state having a second pressure and a second process parameter value from the first state; and applying the pressure control profile to control the pressure by varying the position of the exhaust valve while changing the process chamber to the second state.

    摘要翻译： 本文公开了方法和装置。 在一些实施例中，控制处理室的方法可以包括根据处理参数预先确定处理容积中的压力与排气门的位置之间的关系; 将所述处理室设定为处理容积中具有第一压力的第一状态和所述处理参数的第一值，其中所述排气阀基于所述预定关系设定在第一位置以产生所述第一值的所述第一压力; 当所述处理室改变为具有来自所述第一状态的第二压力和第二过程参数值的第二状态时，确定压力控制曲线以控制所述压力; 以及通过在将处理室改变到第二状态的同时改变排气门的位置来施加压力控制曲线来控制压力。

    Control scheme for cold wafer compensation on a lithography track
    4.
    发明申请
    Control scheme for cold wafer compensation on a lithography track 审中-公开
    光刻轨道上冷晶片补偿的控制方案

    公开(公告)号：US20070251939A1

    公开(公告)日：2007-11-01

    申请号：US11414138

    申请日：2006-04-27

    申请人： Alex Minkovich ,  Natarajan Ramanan ,  Eehern Wong

    发明人： Alex Minkovich ,  Natarajan Ramanan ,  Eehern Wong

    IPC分类号： H05B1/02

    CPC分类号： H05B1/0233 ,  H01L21/67225 ,  H01L21/67248

    摘要： The present invention relates generally to control schemes for controlling the temperature of a heater plate of a thermal unit, e.g., of a track lithography tool. In accordance with certain embodiments of the invention, a cold wafer compensation offset value is added to an initial target heater plate temperature setpoint, and this setpoint plus offset is used to control the temperature of the heater plate prior to placement of a semiconductor wafer, e.g., via Proportional-Integral-Derivative (PID) control. Further, in accordance with certain embodiments, upon cold wafer placement, the temperature control is turned off until the temperature of the heater plate reaches the initial target heater plate temperature setpoint. The temperature control (e.g., PID control) is then reinstated, and the heater plate and wafer are controlled to steady state. In other embodiments, the control schemes of the invention include an integral contribution memory component prior to cold wafer placement, which reinstates the same integral contribution value once PID temperature control is turned back on.

    摘要翻译： 本发明一般涉及用于控制例如轨道光刻工具的热单元的加热器板的温度的控制方案。 根据本发明的某些实施例，将冷晶片补偿偏移值添加到初始目标加热器板温度设定点，并且该设定点加偏移用于在放置半导体晶片之前控制加热器板的温度，例如 ，通过比例积分微分（PID）控制。 此外，根据某些实施例，在冷晶片放置时，关闭温度控制直到加热器板的温度达到初始目标加热器板温度设定点。 然后恢复温度控制（例如，PID控制），并且加热器板和晶片被控制为稳定状态。 在其他实施例中，本发明的控制方案包括在冷晶片放置之前的整体贡献存储器部件，一旦PID温度控制被重新导通就恢复相同的积分贡献值。