-
1.发明授权公开(公告)号：US08880210B2
公开(公告)日：2014-11-04
申请号：US13183520
申请日：2011-07-15
申请人： Keith Brian Porthouse , John W. Lane , Mariusch Gregor , Nir Merry , Michael R. Rice , Alex Minkovich , Hongbin Li , Dmitry A. Dzilno
发明人： Keith Brian Porthouse , John W. Lane , Mariusch Gregor , Nir Merry , Michael R. Rice , Alex Minkovich , Hongbin Li , Dmitry A. Dzilno
CPC分类号： G05D16/2046 , G05B17/02 , H01L21/67017 , H01L21/67253
摘要： Methods and apparatus are disclosed herein. In some embodiments, methods of controlling process chambers may include predetermining a relationship between pressure in a processing volume and a position of an exhaust valve as a function of a process parameter; setting the process chamber to a first state having a first pressure in the processing volume and a first value of the process parameter, wherein the exhaust valve is set to a first position based on the predetermined relationship to produce the first pressure at the first value; determining a pressure control profile to control the pressure as the process chamber is changed to a second state having a second pressure and a second process parameter value from the first state; and applying the pressure control profile to control the pressure by varying the position of the exhaust valve while changing the process chamber to the second state.
摘要翻译： 本文公开了方法和装置。 在一些实施例中，控制处理室的方法可以包括根据处理参数预先确定处理容积中的压力与排气门的位置之间的关系; 将所述处理室设定为处理容积中具有第一压力的第一状态和所述处理参数的第一值，其中所述排气阀基于所述预定关系设定在第一位置以产生所述第一值的所述第一压力; 当所述处理室改变为具有来自所述第一状态的第二压力和第二过程参数值的第二状态时，确定压力控制曲线以控制所述压力; 以及通过在将处理室改变到第二状态的同时改变排气门的位置来施加压力控制曲线来控制压力。
-
2.发明授权Methods and apparatus for calibrating flow controllers in substrate processing systems 有权校准基板处理系统中流量控制器的方法和装置公开(公告)号：US08707754B2
公开(公告)日：2014-04-29
申请号：US12915345
申请日：2010-10-29
申请人： James P. Cruse , John W. Lane , Mariusch Gregor , Duc Buckius , Berrin Daran , Corie Lynn Cobb , Ming Xu , Andrew Nguyen
发明人： James P. Cruse , John W. Lane , Mariusch Gregor , Duc Buckius , Berrin Daran , Corie Lynn Cobb , Ming Xu , Andrew Nguyen
CPC分类号： H01L21/67253 , F16K37/00 , F16K37/0091 , G01F25/00 , Y10T29/53022 , Y10T137/8158 , Y10T137/87153 , Y10T137/87684 , Y10T137/877
摘要： Methods and apparatus for calibrating a plurality of gas flows in a substrate processing system are provided herein. In some embodiments, a substrate processing system may include a cluster tool comprising a first process chamber and a second process chamber coupled to a central vacuum transfer chamber; a first flow controller to provide a process gas to the first process chamber; a second flow controller to provide the process gas to the second process chamber; a mass flow verifier to verify a flow rate from each of the first and second flow controllers; a first conduit to selectively couple the first flow controller to the mass flow verifier; and a second conduit to selectively couple the second flow controller to the mass flow verifier.
摘要翻译： 本文提供了用于校准衬底处理系统中的多个气流的方法和装置。 在一些实施例中，衬底处理系统可以包括簇工具，其包括耦合到中心真空传送室的第一处理室和第二处理室; 第一流量控制器，用于向第一处理室提供处理气体; 第二流量控制器，用于向第二处理室提供处理气体; 质量流量验证器，用于验证来自所述第一和第二流量控制器中的每一个的流量; 用于选择性地将第一流量控制器耦合到质量流量验证器的第一导管; 以及用于选择性地将第二流量控制器耦合到质量流量验证器的第二导管。
-
公开(公告)号：US08397739B2
公开(公告)日：2013-03-19
申请号：US12986012
申请日：2011-01-06
申请人： Mariusch Gregor , John W. Lane
发明人： Mariusch Gregor , John W. Lane
CPC分类号： F17D3/00 , G01F25/003 , G01F25/0053 , Y10T137/0324 , Y10T137/0363 , Y10T137/0379 , Y10T137/0402 , Y10T137/2524 , Y10T137/2529
摘要： Embodiments of the present invention generally relate to methods of controlling gas flow in etching chambers. The methods generally include splitting a single process gas supply source into multiple inputs of separate process chambers, such that each chamber processes substrates under uniform processing conditions. The method generally includes using a mass flow controller as a reference for calibrating a flow ratio controller. A span correction factor may be determined to account for the difference between the actual flow and the measured flow through the flow ratio controller. The span correction factors may be used to determine corrected set points for each channel of the flow controller using equations provided herein. Furthermore, the set points of the flow ratio controller may be made gas-independent using additional equations provided herein.
-
公开(公告)号：US20140053912A1
公开(公告)日：2014-02-27
申请号：US13591212
申请日：2012-08-21
IPC分类号： G05D16/20
CPC分类号： G05D16/2006 , C23C16/45561 , G05D7/0664 , Y10T137/0379 , Y10T137/7761 , Y10T137/87885
摘要： The present invention provides methods and apparatus for controlling gas flow to a semiconductor-processing chamber. The invention includes deactivating ratio setpoint feedback control in a flow ratio controller; initiating gas flow through the flow ratio controller; moving valves of the flow ratio controller to a preset position based on a stored position when an upstream pressure reaches a stored upstream pressure value, wherein the stored position and the stored upstream pressure value were stored during a prior process run; determining that steady state flow ratio controller output flows have been reached; and activating ratio setpoint feedback control in the flow ratio controller. Numerous additional features are disclosed.
摘要翻译： 本发明提供了用于控制到半导体处理室的气流的方法和装置。 本发明包括流量比控制器中的停用比率设定点反馈控制; 启动气流通过流量比控制器; 当上游压力达到存储的上游压力值时，基于存储位置，将流量比控制器的阀移动到预设位置，其中在先前的处理运行期间存储所存储的位置和存储的上游压力值; 确定稳态流量比控制器输出流量已达到; 和流量比控制器中的启动比设定点反馈控制。 公开了许多附加特征。
-
公开(公告)号：US20090266139A1
公开(公告)日：2009-10-29
申请号：US12427947
申请日：2009-04-22
申请人： Mariusch Gregor , John W. Lane
发明人： Mariusch Gregor , John W. Lane
IPC分类号： G01F25/00
CPC分类号： G01F25/003 , G01F25/0038 , Y10T137/0324 , Y10T137/7759
摘要： A method and apparatus that solve the problem of accurate measurement of gas flow so that the delivery of gases in semiconductor processing may be performed with greater confidence and accuracy by performing real-time characterization of a lead-line for mass flow controller (MFC) flow verification are provided. In one embodiment a mass flow verifier (MFV) provides rate of rise information to a controller via a digital interface without correcting for lead-line influences. After receiving the rate of rise data from the tool host computer computes a gas mass correction factor in real-time based on at least one of the following: MFC temperature sensor data, lead-line temperature sensor data, lead-line pressure transducer data, and lead-line volume. The rate of rise data and gas mass correction factor are used to compute accurate mass flow. The accurate mass flow information may be used to calibrate the MFC.
摘要翻译： 一种解决气体流量精确测量问题的方法和装置，可以通过对质量流量控制器（MFC）流程的引线进行实时表征，以更高的置信度和准确性进行半导体处理中的气体输送 提供验证。 在一个实施例中，质量流量验证器（MFV）通过数字接口向控制器提供上升信息速率，而不会对引线影响进行校正。 在从刀具主机接收到上升数据之后，基于以下至少一个实时计算气体质量校正因子：MFC温度传感器数据，引线温度传感器数据，引线压力传感器数据， 和引线量。 上升率和气体质量校正因子用于计算精确质量流量。 准确的质量流量信息可用于校准MFC。
-
公开(公告)号：US09200754B2
公开(公告)日：2015-12-01
申请号：US13846007
申请日：2013-03-18
申请人： Mariusch Gregor , John W. Lane
发明人： Mariusch Gregor , John W. Lane
CPC分类号： F17D3/00 , G01F25/003 , G01F25/0053 , Y10T137/0324 , Y10T137/0363 , Y10T137/0379 , Y10T137/0402 , Y10T137/2524 , Y10T137/2529
摘要： Embodiments of the present invention generally relate to methods of controlling gas flow in etching chambers. The methods generally include splitting a single process gas supply source into multiple inputs of separate process chambers, such that each chamber processes substrates under uniform processing conditions. The method generally includes using a mass flow controller as a reference for calibrating a flow ratio controller. A span correction factor may be determined to account for the difference between the actual flow and the measured flow through the flow ratio controller. The span correction factors may be used to determine corrected set points for each channel of the flow controller using equations provided herein. Furthermore, the set points of the flow ratio controller may be made gas-independent using additional equations provided herein.
摘要翻译： 本发明的实施例一般涉及控制蚀刻室中的气流的方法。 这些方法通常包括将单个工艺气体供应源分离成单独的处理室的多个输入，使得每个室在均匀的处理条件下处理衬底。 该方法通常包括使用质量流量控制器作为校准流量比控制器的参考。 可以确定跨度校正因子以解决通过流量比控制器的实际流量和测量流量之间的差异。 跨度校正因子可以用于使用本文提供的等式来确定流量控制器的每个通道的校正设定点。 此外，可以使用本文提供的附加方程式将流量比控制器的设定点与气体无关。
-
公开(公告)号：US20110178628A1
公开(公告)日：2011-07-21
申请号：US12986012
申请日：2011-01-06
申请人： Mariusch Gregor , John W. Lane
发明人： Mariusch Gregor , John W. Lane
IPC分类号： G05D7/00
CPC分类号： F17D3/00 , G01F25/003 , G01F25/0053 , Y10T137/0324 , Y10T137/0363 , Y10T137/0379 , Y10T137/0402 , Y10T137/2524 , Y10T137/2529
摘要： Embodiments of the present invention generally relate to methods of controlling gas flow in etching chambers. The methods generally include splitting a single process gas supply source into multiple inputs of separate process chambers, such that each chamber processes substrates under uniform processing conditions. The method generally includes using a mass flow controller as a reference for calibrating a flow ratio controller. A span correction factor may be determined to account for the difference between the actual flow and the measured flow through the flow ratio controller. The span correction factors may be used to determine corrected set points for each channel of the flow controller using equations provided herein. Furthermore, the set points of the flow ratio controller may be made gas-independent using additional equations provided herein.
摘要翻译： 本发明的实施例一般涉及控制蚀刻室中的气流的方法。 这些方法通常包括将单个工艺气体供应源分离成单独的处理室的多个输入，使得每个室在均匀的处理条件下处理衬底。 该方法通常包括使用质量流量控制器作为校准流量比控制器的参考。 可以确定跨度校正因子以解决通过流量比控制器的实际流量和测量流量之间的差异。 跨度校正因子可以用于使用本文提供的等式来确定流量控制器的每个通道的校正设定点。 此外，可以使用本文提供的附加方程式将流量比控制器的设定点与气体无关。
-
公开(公告)号：US09004107B2
公开(公告)日：2015-04-14
申请号：US13591212
申请日：2012-08-21
IPC分类号： F16K11/20 , G05D16/20 , C23C16/455 , G05D7/06
CPC分类号： G05D16/2006 , C23C16/45561 , G05D7/0664 , Y10T137/0379 , Y10T137/7761 , Y10T137/87885
摘要： The present invention provides methods and apparatus for controlling gas flow to a semiconductor-processing chamber. The invention includes deactivating ratio setpoint feedback control in a flow ratio controller; initiating gas flow through the flow ratio controller; moving valves of the flow ratio controller to a preset position based on a stored position when an upstream pressure reaches a stored upstream pressure value, wherein the stored position and the stored upstream pressure value were stored during a prior process run; determining that steady state flow ratio controller output flows have been reached; and activating ratio setpoint feedback control in the flow ratio controller. Numerous additional features are disclosed.
摘要翻译： 本发明提供了用于控制到半导体处理室的气流的方法和装置。 本发明包括流量比控制器中的停用比率设定点反馈控制; 启动气流通过流量比控制器; 当上游压力达到存储的上游压力值时，基于存储位置，将流量比控制器的阀移动到预设位置，其中在先前的处理运行期间存储所存储的位置和存储的上游压力值; 确定稳态流量比控制器输出流量已达到; 和流量比控制器中的启动比设定点反馈控制。 公开了许多附加特征。
-
公开(公告)号：US08205629B2
公开(公告)日：2012-06-26
申请号：US12427947
申请日：2009-04-22
申请人： Mariusch Gregor , John W. Lane
发明人： Mariusch Gregor , John W. Lane
IPC分类号： F16K31/12
CPC分类号： G01F25/003 , G01F25/0038 , Y10T137/0324 , Y10T137/7759
摘要： A method and apparatus that solve the problem of accurate measurement of gas flow so that the delivery of gases in semiconductor processing may be performed with greater confidence and accuracy by performing real-time characterization of a lead-line for mass flow controller (MFC) flow verification are provided. In one embodiment a mass flow verifier (MFV) provides rate of rise information to a controller via a digital interface without correcting for lead-line influences. After receiving the rate of rise data, the tool host computer computes a gas mass correction factor in real-time based on at least one of the following: MFC temperature sensor data, lead-line temperature sensor data, lead-line pressure transducer data, and lead-line volume. The rate of rise data and gas mass correction factor are used to compute accurate mass flow. The accurate mass flow information may be used to calibrate the MFC.
摘要翻译： 一种解决气体流量精确测量问题的方法和装置，可以通过对质量流量控制器（MFC）流程的引线进行实时表征，以更高的置信度和准确性进行半导体处理中的气体输送 提供验证。 在一个实施例中，质量流量验证器（MFV）通过数字接口向控制器提供上升信息速率，而不会对引线影响进行校正。 在收到上升数据率之后，工具主机基于以下至少一个实时计算气体质量校正因子：MFC温度传感器数据，引线温度传感器数据，引线压力传感器数据， 和引线量。 上升率和气体质量校正因子用于计算精确质量流量。 准确的质量流量信息可用于校准MFC。
-
公开(公告)号：US20150182848A1
公开(公告)日：2015-07-02
申请号：US14588880
申请日：2015-01-02
申请人： John W. Lane
发明人： John W. Lane
IPC分类号： A63C17/01
CPC分类号： A63C17/018 , A63C17/017 , A63C17/18 , Y10T29/49716
摘要： Ice skateboards, ice skateboard conversion kits, and methods for converting a skateboard to an ice skateboard are presented. An ice skateboard or an ice skateboard conversion kit may include four blades. Each blade may include an elongate sharp lower edge and an opening for pivotally mounting the blade on one of four skateboard axle ends. Eight spacer bushings each may include a bore for pivotally mounting the spacer bushing on one of the axle ends. Lengths of two of the spacer bushings may be configured to dispose at least one of the blades along a middle third of one of the axle ends when the blade is pivotally mounted to the axle end between the two spacer bushings.
摘要翻译： 介绍了滑冰板，滑冰板转换套件以及将滑板转换为滑冰板的方法。 冰滑板或滑冰板转换套件可包括四个刀片。 每个叶片可以包括细长的尖锐的下边缘和用于将叶片枢转地安装在四个滑板轴端之一上的开口。 八个间隔衬套各自可以包括用于将隔离衬套枢转地安装在轴端之一上的孔。 两个间隔套管中的两个长度可以被配置成当叶片枢转地安装在两个间隔套管之间的轴端时沿着一个轴端的中间三分之一设置至少一个叶片。
-
-
-
-
-
-
-
-
-
搜索结果
34 条记录 (耗时 0.034 秒)
