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1.发明授权Apparatus and method for controlling a flow of process material to a deposition chamber 有权用于控制处理材料流到沉积室的装置和方法公开(公告)号：US06176930B1
公开(公告)日：2001-01-23
申请号：US09262756
申请日：1999-03-04
申请人： Keith K. Koai , Tung-Ching Tseng , James J. Chen , Mark S. Johnson , John Schmitt , Sean Li
发明人： Keith K. Koai , Tung-Ching Tseng , James J. Chen , Mark S. Johnson , John Schmitt , Sean Li
IPC分类号： C23C1600
CPC分类号： C23C16/45565 , C23C16/4486 , C23C16/45561 , C23C16/52
摘要： An apparatus and method for controlling a flow of process material to a deposition chamber. The apparatus comprises an injector valve, disposed between the process material source and the deposition chamber. The injector valve controls the flow of precursor material by repeatedly opening and closing the injector valve with a predetermined duty cycle. The apparatus further comprises an evaporator coupled to the injector valve for evaporating the precursor.
摘要翻译： 一种用于控制处理材料流到沉积室的装置和方法。 该装置包括设置在处理材料源和沉积室之间的喷射阀。 喷射器阀通过以预定的工作周期反复打开和关闭喷射器阀来控制前体材料的流动。 该装置还包括耦合到喷射器阀的蒸发器以蒸发前体。
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2.发明申请公开(公告)号：US20120068793A1
公开(公告)日：2012-03-22
申请号：US12886653
申请日：2010-09-21
IPC分类号： H01P1/04
CPC分类号： H01P5/028 , H01L29/812 , H01P5/08
摘要： A structure having a coplanar waveguide transistor; and a microwave section, coupled to the transistor, having: a strip conductor coplanar with the electrodes of the coplanar waveguide transistor and a ground plane conductor disposed under the strip conductor.
摘要翻译： 具有共面波导晶体管的结构; 以及耦合到所述晶体管的微波部分，具有：与所述共面波导晶体管的电极共面的带状导体，以及设置在所述带状导体下方的接地平面导体。
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3.发明授权公开(公告)号：US08963658B2
公开(公告)日：2015-02-24
申请号：US12886653
申请日：2010-09-21
IPC分类号： H01P5/08 , H01P5/02 , H01L29/812
CPC分类号： H01P5/028 , H01L29/812 , H01P5/08
摘要： A structure having a coplanar waveguide transistor; and a microwave section, coupled to the transistor, having: a strip conductor coplanar with the electrodes of the coplanar waveguide transistor and a ground plane conductor disposed under the strip conductor.
摘要翻译： 具有共面波导晶体管的结构; 以及耦合到所述晶体管的微波部分，具有：与所述共面波导晶体管的电极共面的带状导体，以及设置在所述带状导体下方的接地平面导体。
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公开(公告)号：US06364954B2
公开(公告)日：2002-04-02
申请号：US09211998
申请日：1998-12-14
申请人： Salvador P. Umotoy , Steve H. Chiao , Anh N. Nguyen , Be V. Vo , Joel Huston , James J. Chen , Lawrence Chung-Lai Lei
发明人： Salvador P. Umotoy , Steve H. Chiao , Anh N. Nguyen , Be V. Vo , Joel Huston , James J. Chen , Lawrence Chung-Lai Lei
IPC分类号： C23C1600
CPC分类号： C23C16/45565 , C23C16/4401 , C23C16/4405 , C23C16/4412 , C23C16/45514 , C23C16/45574 , C23C16/4584 , C23C16/5096
摘要： An apparatus for wafer processing, which comprises a chamber body and a heated liner which are thermally isolated from each other by isolating pins. During wafer processing, e.g., deposition of titanium nitride film by thermal reaction between titanium tetrachloride and ammonia, a wafer substrate is heated to a reaction temperature in the range of 600-700° C. by a heated support pedestal. The chamber liner and the interior chamber walls are maintained at a temperature between 150-250° C. to prevent deposition of undesirable by-products inside the chamber. This facilitates the chamber cleaning procedure, which can be performed using an in-situ chlorine-based process. The excellent thermal isolation between the heated liner and the chamber body allows the chamber exterior to be maintained at a safe operating temperature of 60-65° C. A heated exhaust assembly is also used in conjunction with the process chamber to remove exhaust gases and reaction by-products. External heaters are used to maintain the exhaust assembly at a temperature of about 150-200° C. to minimize undesirable deposits on the interior surfaces of the exhaust assembly.
摘要翻译： 一种用于晶片处理的装置，其包括通过隔离销彼此热隔离的室主体和加热衬套。 在晶片加工期间，例如通过四氯化钛和氨之间的热反应沉积氮化钛膜，通过加热的支撑基座将晶片基板加热至600-700℃范围内的反应温度。 腔室衬里和内部室壁保持在150-250℃之间的温度，以防止在室内沉积不期望的副产物。 这有助于室清洁程序，其可以使用原位氯基方法进行。 加热的衬套和腔体之间的良好的隔热能使室外保持在60-65℃的安全工作温度。加热排气组件还与处理室结合使用以除去废气和反应 副产品。 使用外部加热器将排气组件保持在约150-200℃的温度下，以使排气组件的内表面上的不期望的沉积物最小化。
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公开(公告)号：US20220205890A1
公开(公告)日：2022-06-30
申请号：US17136000
申请日：2020-12-29
申请人： James J. Chen
发明人： James J. Chen
摘要： A device is provided that is intended to simultaneously measure and identify at least two characteristics of multiphase fluid flows through the device and/or equipment attached to the device. The device has a lower measurement medium invasive compartment comprised of at least two ultrasonic and/or acoustic transducers, a piezo-resistive sensing element, and a resistance temperature detector (RTD) to make simultaneous independent measurement. A pathway connects to the device's upper electronic compartment comprised of an accelerometer array, multiple stacked circuit boards providing power, sensing interface, processing, calculation, and network communication functionalities. The device is capable of measuring, processing, and calculating simultaneous independent pressure, temperature, flow rate, and vibration measurement. The device reports data to an external system via either wired and/or wireless communication channel.
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