Thin-film transistor
    1.
    发明申请
    Thin-film transistor 审中-公开
    薄膜晶体管

    公开(公告)号:US20060243974A1

    公开(公告)日:2006-11-02

    申请号:US11175440

    申请日:2005-07-07

    IPC分类号: H01L29/04

    摘要: A thin-film transistor (TFT) is described to have a gate layer, an insulating layer, a semiconductor layer, and a source/drain layer formed on a flexible substrate. The source and the drain layers are separated by a channel with a special shape. This does not only increase the aspect ratio of the channel per unit area, the source and the drain also have multiple directions for transmitting carriers. The carrier mobility of the TFT is thus enhanced with uniform and stable circuit properties.

    摘要翻译: 薄膜晶体管(TFT)被描述为具有形成在柔性基板上的栅极层,绝缘层,半导体层和源极/漏极层。 源极和漏极层由具有特殊形状的通道分开。 这不仅增加了每单位面积通道的纵横比,而且源和漏还具有用于传输载体的多个方向。 因此,TFT的载流子迁移率增强,具有均匀且稳定的电路特性。

    Scan driver and scan driving system with low input voltage, and their level shift voltage circuit
    2.
    发明授权
    Scan driver and scan driving system with low input voltage, and their level shift voltage circuit 有权
    具有低输入电压的扫描驱动和扫描驱动系统及其电平转换电压电路

    公开(公告)号:US07283116B2

    公开(公告)日:2007-10-16

    申请号:US10760410

    申请日:2004-01-21

    IPC分类号: G09G3/36

    摘要: Scan driver and driving system with low input voltage and their level shift circuit are disclosed. The scan driver includes a latch unit, a level shift circuit and a buffer. The latch unit generates a first control signal and a second control signal. The level shift circuit is connected to the latch unit to receive the first control signal, the second control signal, a first clock signal and a second clock signal, so as to output a scan signal with high voltage level. The buffer enhances driving ability of the scan signal for driving thin-film transistors (TFTs) of a display panel.

    摘要翻译: 公开了具有低输入电压的扫描驱动器和驱动系统及其电平移位电路。 扫描驱动器包括锁存单元,电平移位电路和缓冲器。 锁存单元产生第一控制信号和第二控制信号。 电平移位电路连接到锁存单元以接收第一控制信号,第二控制信号,第一时钟信号和第二时钟信号,以输出具有高电压电平的扫描信号。 该缓冲器增强用于驱动显示面板的薄膜晶体管(TFT)的扫描信号的驱动能力。

    Load-balanced apparatus of memory
    3.
    发明授权
    Load-balanced apparatus of memory 有权
    负载均衡的存储器

    公开(公告)号:US07385866B2

    公开(公告)日:2008-06-10

    申请号:US11347052

    申请日:2006-02-03

    IPC分类号: G11C7/02

    CPC分类号: G11C7/067 G11C7/062 G11C7/14

    摘要: A memory device is provided. The device comprises a sense amplifier having a cell input terminal and a reference input terminal, a first sub-array coupled to the cell input terminal through a first switch and coupled to the reference input terminal through a second switch, a second sub-array coupled to the cell input terminal through a third switch and coupled to the reference input terminal through a fourth switch, and a reference cell array coupled between the second switch and the fourth switch and coupled to the reference input terminal.

    摘要翻译: 提供存储器件。 该器件包括具有单元输入端和参考输入端的读出放大器,通过第一开关耦合到单元输入端并通过第二开关耦合到参考输入端的第一子阵列,第二子阵列耦合 通过第三开关耦合到单元输入端,并通过第四开关耦合到参考输入端,以及耦合在第二开关和第四开关之间并耦合到参考输入端的参考单元阵列。

    Load-balanced apparatus of memory
    4.
    发明申请
    Load-balanced apparatus of memory 有权
    负载均衡的存储器

    公开(公告)号:US20070109841A1

    公开(公告)日:2007-05-17

    申请号:US11347052

    申请日:2006-02-03

    IPC分类号: G11C11/00

    CPC分类号: G11C7/067 G11C7/062 G11C7/14

    摘要: A memory device is provided. The device comprises a sense amplifier having a cell input terminal and a reference input terminal, a first sub-array coupled to the cell input terminal through a first switch and coupled to the reference input terminal through a second switch, a second sub-array coupled to the cell input terminal through a third switch and coupled to the reference input terminal through a fourth switch, and a reference cell array coupled between the second switch and the fourth switch and coupled to the reference input terminal.

    摘要翻译: 提供存储器件。 该器件包括具有单元输入端和参考输入端的读出放大器,通过第一开关耦合到单元输入端并通过第二开关耦合到参考输入端的第一子阵列,第二子阵列耦合 通过第三开关耦合到单元输入端,并通过第四开关耦合到参考输入端,以及耦合在第二开关和第四开关之间并耦合到参考输入端的参考单元阵列。

    Scan driver and scan driving system with low input voltage, and their level shift voltage circuit
    5.
    发明申请
    Scan driver and scan driving system with low input voltage, and their level shift voltage circuit 有权
    具有低输入电压的扫描驱动和扫描驱动系统及其电平转换电压电路

    公开(公告)号:US20050057553A1

    公开(公告)日:2005-03-17

    申请号:US10760410

    申请日:2004-01-21

    摘要: Scan driver and driving system with low input voltage and their level shift circuit are disclosed. The scan driver includes a latch unit, a level shift circuit and a buffer. The latch unit generates a first control signal and a second control signal. The level shift circuit is connected to the latch unit to receive the first control signal, the second control signal, a first clock signal and a second clock signal, so as to output a scan signal with high voltage level. The buffer enhances driving ability of the scan signal for driving thin-film transistors (TFTs) of a display panel.

    摘要翻译: 公开了具有低输入电压的扫描驱动器和驱动系统及其电平移位电路。 扫描驱动器包括锁存单元,电平移位电路和缓冲器。 锁存单元产生第一控制信号和第二控制信号。 电平移位电路连接到锁存单元以接收第一控制信号,第二控制信号,第一时钟信号和第二时钟信号,以输出具有高电压电平的扫描信号。 该缓冲器增强用于驱动显示面板的薄膜晶体管(TFT)的扫描信号的驱动能力。

    Sense amplifier
    6.
    发明授权
    Sense amplifier 有权
    感应放大器

    公开(公告)号:US07394295B2

    公开(公告)日:2008-07-01

    申请号:US11515882

    申请日:2006-09-06

    IPC分类号: H03K5/22

    摘要: The invention relates to a sense amplifier comprising the following element: a first current mirror unit coupled to a high voltage source, outputting a first current and a second current according to a first reference current, wherein the second current is twice the first current; a second current mirror unit coupled to a high voltage source, outputting a third current according to a second reference current; a first impedor coupled to the second current and a low voltage source; a second impedor coupled to the third current and a low voltage source; a third current mirror coupled to the first, second and third currents, and the first current is regarded as the reference current of the third current mirror unit, thus, the current which flows through the first impedor is the first current, and the current which flows through the second impedor is a fourth current.

    摘要翻译: 本发明涉及一种包括以下元件的读出放大器:耦合到高电压源的第一电流镜单元,根据第一参考电流输出第一电流和第二电流,其中第二电流是第一电流的两倍; 耦合到高电压源的第二电流镜单元,根据第二参考电流输出第三电流; 耦合到第二电流的第一阻抗器和低电压源; 耦合到第三电流的第二阻抗器和低电压源; 耦合到第一,第二和第三电流的第三电流镜,第一电流被认为是第三电流镜单元的参考电流,因此流过第一阻抗器的电流是第一电流, 流过第二阻抗器的是第四电流。

    Memory and multi-state sense amplifier thereof
    7.
    发明申请
    Memory and multi-state sense amplifier thereof 有权
    存储器和多状态读出放大器

    公开(公告)号:US20080019192A1

    公开(公告)日:2008-01-24

    申请号:US11797725

    申请日:2007-05-07

    IPC分类号: G11C7/20

    摘要: The invention provides a multi-state sense amplifier, coupled to at least one memory cell and a plurality of reference cells. The source follower, coupled between a first node and the output terminal of the memory cell, clamps the voltage drop across the memory cell to generate a memory cell current flowing through the first node. The source follower circuit, coupled between a plurality of second nodes and the output terminals of the reference cells, clamps the voltage drops across the reference cells to generate a plurality of reference currents respectively flowing through the second nodes. The current mirror circuit, coupled to the first node and the second nodes, duplicates the memory cell current of the first node to affect the reference currents on the second nodes, thereby generating a memory cell voltage on the first node and a plurality of reference voltages on the second nodes.

    摘要翻译: 本发明提供一种耦合到至少一个存储单元和多个参考单元的多状态读出放大器。 耦合在第一节点和存储器单元的输出端之间的源极跟随器钳位在存储器单元两端的电压降,以产生流经第一节点的存储单元电流。 耦合在多个第二节点和参考单元的输出端子之间的源极跟随器电路钳位参考单元上的电压降,以产生分别流过第二节点的多个参考电流。 耦合到第一节点和第二节点的电流镜像电路复制第一节点的存储器单元电流,以影响第二节点上的参考电流,从而在第一节点上产生存储单元电压,并产生多个参考电压 在第二个节点上。

    Sense amplifier
    8.
    发明申请
    Sense amplifier 有权
    感应放大器

    公开(公告)号:US20070170956A1

    公开(公告)日:2007-07-26

    申请号:US11515882

    申请日:2006-09-06

    IPC分类号: H03F3/45

    摘要: The invention relates to a sense amplifier comprising the following element: a first current mirror unit coupled to a high voltage source, outputting a first current and a second current according to a first reference current, wherein the second current is twice the first current; a second current mirror unit coupled to a high voltage source, outputting a third current according to a second reference current; a first impedor coupled to the second current and a low voltage source; a second impedor coupled to the third current and a low voltage source; a third current mirror coupled to the first, second and third currents, and the first current is regarded as the reference current of the third current mirror unit, thus, the current which flows through the first impedor is the first current, and the current which flows through the second impedor is a fourth current.

    摘要翻译: 本发明涉及一种包括以下元件的读出放大器:耦合到高电压源的第一电流镜单元,根据第一参考电流输出第一电流和第二电流,其中第二电流是第一电流的两倍; 耦合到高电压源的第二电流镜单元,根据第二参考电流输出第三电流; 耦合到第二电流的第一阻抗器和低电压源; 耦合到第三电流的第二阻抗器和低电压源; 耦合到第一,第二和第三电流的第三电流镜,第一电流被认为是第三电流镜单元的参考电流,因此流过第一阻抗器的电流是第一电流, 流过第二阻抗器的是第四电流。

    Memory and multi-state sense amplifier thereof
    9.
    发明授权
    Memory and multi-state sense amplifier thereof 有权
    存储器和多状态读出放大器

    公开(公告)号:US07539068B2

    公开(公告)日:2009-05-26

    申请号:US11797725

    申请日:2007-05-07

    IPC分类号: G11C7/10

    摘要: The invention provides a multi-state sense amplifier, coupled to at least one memory cell and a plurality of reference cells. The source follower, coupled between a first node and the output terminal of the memory cell, clamps the voltage drop across the memory cell to generate a memory cell current flowing through the first node. The source follower circuit, coupled between a plurality of second nodes and the output terminals of the reference cells, clamps the voltage drops across the reference cells to generate a plurality of reference currents respectively flowing through the second nodes. The current mirror circuit, coupled to the first node and the second nodes, duplicates the memory cell current of the first node to affect the reference currents on the second nodes, thereby generating a memory cell voltage on the first node and a plurality of reference voltages on the second nodes.

    摘要翻译: 本发明提供一种耦合到至少一个存储单元和多个参考单元的多状态读出放大器。 耦合在第一节点和存储器单元的输出端之间的源极跟随器钳位在存储器单元两端的电压降,以产生流经第一节点的存储单元电流。 耦合在多个第二节点和参考单元的输出端子之间的源极跟随器电路钳位参考单元上的电压降,以产生分别流过第二节点的多个参考电流。 耦合到第一节点和第二节点的电流镜像电路复制第一节点的存储器单元电流,以影响第二节点上的参考电流,从而在第一节点上产生存储单元电压,并产生多个参考电压 在第二个节点上。

    Multi-state sense amplifier
    10.
    发明授权
    Multi-state sense amplifier 有权
    多状态读出放大器

    公开(公告)号:US07486546B2

    公开(公告)日:2009-02-03

    申请号:US11806636

    申请日:2007-06-01

    IPC分类号: G11C11/00

    摘要: The invention provides a multi-state sense amplifier, coupled to at least one memory cell with changeable resistance and a plurality of reference cells. The first current mirror circuit, coupled to the output terminal of the memory cell, generates a second memory cell current at a first node according to a first memory cell current through the memory cell. The second current mirror circuit, coupled to the output terminal of the reference cells, generates a plurality of second reference currents at a plurality of second nodes according to a plurality of first reference currents through the reference cells. The load circuit, coupled to the first node, the second nodes, and a ground, provides equal loads for the second memory cell current and the second reference currents to respectively generate a memory cell voltage at the first node and a plurality of reference voltages at the second nodes.

    摘要翻译: 本发明提供一种多状态读出放大器,耦合到具有可变电阻的至少一个存储单元和多个参考单元。 耦合到存储器单元的输出端的第一电流镜电路根据通过存储单元的第一存储单元电流在第一节点产生第二存储单元电流。 耦合到参考单元的输出端的第二电流镜电路根据通过参考单元的多个第一参考电流在多个第二节点处产生多个第二参考电流。 耦合到第一节点,第二节点和地的负载电路为第二存储器单元电流和第二参考电流提供相等的负载,以分别在第一节点处产生存储单元电压和多个参考电压 第二个节点。