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    Thermoelectric element and method of manufacturing same
    4.
    发明授权
    Thermoelectric element and method of manufacturing same 失效
    热电元件及其制造方法

    公开(公告)号：US5009717A

    公开(公告)日：1991-04-23

    申请号：US550879

    申请日：1990-07-11

    申请人： Masashi Komabayashi ,  Kunio Kuramochi ,  Kenichi Hijikata

    发明人： Masashi Komabayashi ,  Kunio Kuramochi ,  Kenichi Hijikata

    IPC分类号： H01L35/22 ,  H01L35/34

    CPC分类号： H01L35/22 ,  H01L35/34

    摘要： A thermoelectric element comprises a first layer of a p-type iron silicide, and a second layer of an n-type iron silicide. The first and second layers are joined together to form a pn junction therebetween. An insulating layer of an oxide is interposed between the first and second layers at portions thereof other than the pn junction. The oxide forming the insulating layer consists essentially of 38.0-50% by weight SiO.sub.2, 0.1-10.0% by weight B.sub.2 O.sub.3, and the balance of MgO and inevitable impurities. In manufacturing the thermoelectric element, one of a powder of the p-type iron silicide and a powder of the n-type iron silicide, a powder of the insulating layer-forming oxide, which may be in the form of a sheet, and the other of the powder of the p-type iron silicide and the powder of the n-type iron silicide are charged into a hot pressing mold in the mentioned order, whereby a laminated body is formed within the mold. The laminated body is hot pressed into a sintered body, which is then heated treated in the atmosphere.

    摘要翻译： 热电元件包括​​p型硅化铁的第一层和n型硅化铁的第二层。 第一层和第二层连接在一起以在它们之间形成pn结。 除了pn结以外的部分，氧化物的绝缘层介于第一和第二层之间。 形成绝缘层的氧化物主要由38.0-50％（重量）SiO 2，0.1-10.0％（重量）B 2 O 3组成，余量为MgO和不可避免的杂质。 在制造热电元件时，p型硅化铁粉末和n型硅化铁粉末之一，可以是片状形式的绝缘层形成氧化物的粉末，以及 其中p型硅化铁粉末和n型硅化铁粉末按照上述顺序装入热压模具中，由此在模具内形成层压体。 将层压体热压成烧结体，然后在大气中进行加热处理。

    Composite target material and process for producing the same
    5.
    发明授权
    Composite target material and process for producing the same 失效
    复合材料及其制造方法

    公开(公告)号：US4620872A

    公开(公告)日：1986-11-04

    申请号：US787529

    申请日：1985-10-15

    申请人： Kenichi Hijikata ,  Katsuyuki Sato ,  Hitoshi Maruyama ,  Ryoko Furuhashi

    发明人： Kenichi Hijikata ,  Katsuyuki Sato ,  Hitoshi Maruyama ,  Ryoko Furuhashi

    IPC分类号： B22F1/00 ,  B22F3/14 ,  C22C1/04 ,  G11B11/105 ,  H01F10/12 ,  H01F41/18 ,  C22C19/07 ,  B22F3/00 ,  C22C38/00

    CPC分类号： B22F1/0003 ,  B22F3/14 ,  C22C1/0441 ,  G11B11/10586 ,  H01F41/183

    摘要： A novel composite target material that is composed of a rare earth metal and a transition metal (iron-group metal) and which is used in the formation of a thin magnetooptical recording film by sputtering is disclosed. Also disclosed is a process for producing such composite target material.The process comprises the steps of providing a rare earth metal and an iron-group transition metal as separate entities, mixing these metals without alloying, and hot-forming the mixture at a temperature lower than the eutectic point of the system of metallic components in the mixture, thereby forming an intermetallic compound at the interface between the rare earth metal and the transition metal while causing said metals to be bonded together.The target material produced by this process contains 30-50 wt % of the rare earth metal, with the balance being made of the iron-group transition metal and incidental impurities. The structure of the target material is also characterized by the presence of an intermetallic compound phase at the interface between the particles of the rare earth metal and those of the transition metal. This composite target material has sufficiently high density, high strength, high deflective strength and good resistance to thermal shock to permit rotation and inversion during sputtering procedures without cracking. Furthermore, the oxygen content of this target material is no higher than 0.3 wt %. Therefore, a perpendicular magnetization film suitable for use in magnetooptical recording can be readily formed by sputtering the target material of the present invention. As a further advantage, the film deposition rate that can be achieved with this target material is significantly fast in comparison with the conventional alloy target material.

    摘要翻译： 公开了一种由稀土金属和过渡金属（铁族金属）组成并用于通过溅射形成薄磁光记录膜的新型复合靶材料。 还公开了制造这种复合靶材的方法。 该方法包括以下步骤：提供稀土金属和铁基过渡金属作为单独的实体，将这些金属混合而不合金化，并在低于金属组分体系的共晶点的温度下热成型混合物 从而在稀土金属和过渡金属之间的界面处形成金属间化合物，同时使所述金属结合在一起。 通过该方法制造的目标材料含有30-50重量％的稀土金属，余量由铁基过渡金属和杂质构成。 目标材料的结构的特征还在于在稀土金属颗粒与过渡金属的颗粒之间的界面存在金属间化合物相。 该复合靶材料具有足够高的密度，高强度，高的偏转强度和良好的耐热冲击性，以允许溅射过程中的旋转和反转而不发生裂纹。 此外，该目标材料的氧含量不高于0.3重量％。 因此，通过溅射本发明的靶材料可以容易地形成适用于磁光记录的垂直磁化膜。 另外的优点是，与常规的合金靶材相比，用该目标材料可以实现的成膜速度显着快。

    P-type Fe silicide thermoelectric conversion material
    7.
    发明授权
    P-type Fe silicide thermoelectric conversion material 失效
    P型热氧化硅热电转换材料

    公开(公告)号：US5057161A

    公开(公告)日：1991-10-15

    申请号：US563291

    申请日：1990-08-06

    申请人： Masashi Komabayashi ,  Kenichi Hijikata

    发明人： Masashi Komabayashi ,  Kenichi Hijikata

    IPC分类号： H01L35/20 ,  H01L35/22

    CPC分类号： H01L35/22

    摘要： A p-type Fe silicide thermoelectric conversion material comprises an Fe silicide, wherein at least one of Cr and V is substituted for part of Fe in the Fe silicide. The Fe silicide is chemically expressed as Fe.sub.1-x M.sub.x Si.sub.2, wherein the value of x falls within a range of 0.01 to 0.1, and M represents the at least one of Cr and V. Alternatively, at least one of Cr and V, and Mn are substituted for part of Fe in the Fe silicide. In this case, the Fe silicide is chemically expressed as Fe.sub.1-x (M+Mn).sub.x Si.sub.2, wherein the value of x falls within a range of 0.01 to 0.1, where M represents the at least one of Cr and V.

    Low-permeability high-strength target material for the formation of thin magnetooptical recording films
    8.
    发明授权
    Low-permeability high-strength target material for the formation of thin magnetooptical recording films 失效
    用于形成薄磁光记录膜的低磁导率高强度目标材料

    公开(公告)号：US5338331A

    公开(公告)日：1994-08-16

    申请号：US892361

    申请日：1992-06-02

    申请人： Kenichi Hijikata ,  Shozo Komiyama ,  Hitoshi Maruyama

    发明人： Kenichi Hijikata ,  Shozo Komiyama ,  Hitoshi Maruyama

    IPC分类号： C22C19/00 ,  C22C38/00 ,  C23C14/14 ,  C23C14/34 ,  G11B11/105 ,  H01F41/18 ,  B22F9/00

    CPC分类号： C23C14/14 ,  G11B11/10582 ,  G11B11/10586 ,  H01F41/183

    摘要： A high-strength target material for forming a thin magnetooptical recording film having a structure comprising: (a) 20-75% of a complex phase in which at least one crystallized iron-group metal is dispersed finely and uniformly in a dendritic, acicular or block form in a proportion of 5-40%, of the total composition, in a matrix of an intermetallic compound of at least one first rare earth metal and at least one iron-group metal; (b) 15-40% of a rare earth metal phase of at least one second rare earth metal; and (c) the remainder being an intermetallic compound phase of a reaction phase of the complex phase and the rare earth metal phase, all percentages being by area, wherein the first and second rare earth metals are the same or different. The target material has such a low permeability that thin magnetooptical recording films can be formed by a magnetron sputtering process with a high utilization.

    摘要翻译： 一种用于形成薄磁光记录膜的高强度目标材料，其具有以下结构：（a）20-75％的复相，其中至少一种结晶的铁族金属在树枝状，针状或 在至少一种第一稀土金属和至少一种铁族金属的金属间化合物的基体中，占总组合物的5-40％的比例的块形式; （b）15-40％的至少一种第二稀土金属的稀土金属相; 和（c）剩余部分是复合相和稀土金属相的反应相的金属间化合物相，所有百分比均为面积，其中第一和第二稀土金属相同或不同。 目标材料具有这样的低磁导率，即通过具有高利用率的磁控溅射工艺可以形成薄磁光记录膜。

    Sputtering target material and process for producing the same
    9.
    发明授权
    Sputtering target material and process for producing the same 失效
    溅射靶材及其制造方法

    公开(公告)号：US4619697A

    公开(公告)日：1986-10-28

    申请号：US769935

    申请日：1985-08-27

    申请人： Kenichi Hijikata ,  Tadashi Sugihara ,  Masashi Komabayashi

    发明人： Kenichi Hijikata ,  Tadashi Sugihara ,  Masashi Komabayashi

    IPC分类号： C04B35/58 ,  C22B34/34 ,  C23C14/34 ,  C22C29/00

    CPC分类号： C04B35/58092 ,  C04B35/58085 ,  C04B35/645 ,  C04B35/65 ,  C22B34/34 ,  C23C14/3414

    摘要： A novel target material for use in the sputter formation of a metal silicide film in electrode wiring in a semiconductor device, and a process for producing such target material are disclosed.The process for producing the target material is characterized by first impregnating molten silicon into a calcined body containing at least one silicide forming metal component and a silicon component and then forming a sintered body with a reduced oxygen content containing both a metal silicide and silicon.The target material prepared in accordance with the invention is extremely low not only in oxygen content but also in the concentrations of other impurities and has high deflective strength as compared with the conventional sintered target.The film formed by sputtering the target of the invention has appreciably reduced impurity levels and hence, very low electric resistivities. The target of the invention enables sputtering to be performed 5 times as fast as in the case using the conventional sintered target.

    摘要翻译： 公开了一种用于在半导体器件中的电极布线中溅射形成金属硅化物膜的新型靶材料及其制造方法。 制造目标材料的方法的特征在于首先将熔融硅浸入含有至少一种形成硅化物的金属组分和硅组分的煅烧体中，然后形成含有金属硅化物和硅的氧含量降低的烧结体。 根据本发明制备的目标材料不仅在氧含量方面也非常低，而且与其他杂质的浓度相比极低，并且与常规烧结靶相比具有高的偏转强度。 通过溅射本发明的靶形成的膜具有明显降低的杂质水平，因此具有非常低的电阻率。 本发明的靶能够使溅射的速度比使用传统烧结靶的情况快5倍。