Composite target material and process for producing the same
    1.
    发明授权
    Composite target material and process for producing the same 失效
    复合材料及其制造方法

    公开(公告)号:US4620872A

    公开(公告)日:1986-11-04

    申请号:US787529

    申请日:1985-10-15

    摘要: A novel composite target material that is composed of a rare earth metal and a transition metal (iron-group metal) and which is used in the formation of a thin magnetooptical recording film by sputtering is disclosed. Also disclosed is a process for producing such composite target material.The process comprises the steps of providing a rare earth metal and an iron-group transition metal as separate entities, mixing these metals without alloying, and hot-forming the mixture at a temperature lower than the eutectic point of the system of metallic components in the mixture, thereby forming an intermetallic compound at the interface between the rare earth metal and the transition metal while causing said metals to be bonded together.The target material produced by this process contains 30-50 wt % of the rare earth metal, with the balance being made of the iron-group transition metal and incidental impurities. The structure of the target material is also characterized by the presence of an intermetallic compound phase at the interface between the particles of the rare earth metal and those of the transition metal. This composite target material has sufficiently high density, high strength, high deflective strength and good resistance to thermal shock to permit rotation and inversion during sputtering procedures without cracking. Furthermore, the oxygen content of this target material is no higher than 0.3 wt %. Therefore, a perpendicular magnetization film suitable for use in magnetooptical recording can be readily formed by sputtering the target material of the present invention. As a further advantage, the film deposition rate that can be achieved with this target material is significantly fast in comparison with the conventional alloy target material.

    摘要翻译: 公开了一种由稀土金属和过渡金属(铁族金属)组成并用于通过溅射形成薄磁光记录膜的新型复合靶材料。 还公开了制造这种复合靶材的方法。 该方法包括以下步骤:提供稀土金属和铁基过渡金属作为单独的实体,将这些金属混合而不合金化,并在低于金属组分体系的共晶点的温度下热成型混合物 从而在稀土金属和过渡金属之间的界面处形成金属间化合物,同时使所述金属结合在一起。 通过该方法制造的目标材料含有30-50重量%的稀土金属,余量由铁基过渡金属和杂质构成。 目标材料的结构的特征还在于在稀土金属颗粒与过渡金属的颗粒之间的界面存在金属间化合物相。 该复合靶材料具有足够高的密度,高强度,高的偏转强度和良好的耐热冲击性,以允许溅射过程中的旋转和反转而不发生裂纹。 此外,该目标材料的氧含量不高于0.3重量%。 因此,通过溅射本发明的靶材料可以容易地形成适用于磁光记录的垂直磁化膜。 另外的优点是,与常规的合金靶材相比,用该目标材料可以实现的成膜速度显着快。

    Method for producing an aqueous emulsion
    2.
    发明授权
    Method for producing an aqueous emulsion 有权
    水乳液的制造方法

    公开(公告)号:US09096695B2

    公开(公告)日:2015-08-04

    申请号:US12993569

    申请日:2009-06-09

    摘要: Disclosed is a method for producing an aqueous emulsion containing a fluorine-containing copolymer comprising, as copolymerizable monomers, (A) at least one of a perfluoroalkylalkyl acrylate and a corresponding methacrylate represented by the general formula: CnF2n+1CmH2mOCOCR═CH2, wherein R is hydrogen or methyl group, n is 4, 5, or 6, and m is 1, 2, 3, or 4; (B) benzyl acrylate or benzyl methacrylate; (C) a fluorine-free polymerizable monomer other than benzyl acrylate and benzyl methacrylate; and (D) a crosslinkable group-containing polymerizable monomer; the copolymer being produced by previously subjecting 10 to 80 wt. % of the total weight of component (A) and 0 to 60 wt. % of the total weight of component (B) to a first polymerization reaction using an emulsion polymerization method; and then subjecting the remaining components to a second polymerization reaction using an emulsion polymerization method; wherein an emulsifier is used in the emulsion polymerization reaction in an amount of 21 to 150 parts by weight based on 100 parts by weight of the total weight of polymerizable monomers (A) and (B) used in the first polymerization reaction.

    摘要翻译: 公开了含有含氟共聚物的水性乳液的方法,该含水共聚物包含作为可共聚单体的(A)丙烯酸全氟烷基烷基酯和由通式C n F 2n + 1C m H 2 mOCO CR = CH 2表示的相应甲基丙烯酸中的至少一种,其中R为 氢或甲基,n为4,5或6,m为1,2,3或4; (B)丙烯酸苄酯或甲基丙烯酸苄酯; (C)丙烯酸苄酯和甲基丙烯酸苄酯以外的无氟可聚合单体; 和(D)含可交联基团的可聚合单体; 该共聚物通过预先使10〜80wt。 组分(A)的总重量的%和0至60wt。 使用乳液聚合法的组分(B)与第一聚合反应的总重量的%; 然后使用乳液聚合法对剩余的组分进行第二聚合反应; 其中基于在第一聚合反应中使用的可聚合单体(A)和(B)的总重量的100重量份,乳液聚合反应中使用的乳化剂的量为21〜150重量份。

    Transmission device and transmission method
    3.
    发明授权
    Transmission device and transmission method 有权
    传输装置及传输方式

    公开(公告)号:US08520870B2

    公开(公告)日:2013-08-27

    申请号:US13038645

    申请日:2011-03-02

    IPC分类号: H04R5/02

    摘要: A transmission device includes: a communication unit performing communication with one or more receiving devices; a distance measurement unit measuring direct distances to the receiving devices; a transmission data setting unit setting transmission data including content data including audio and time information indicating the time when reproduction of content data is started for the receiving devices whose distances are measured based on the measured distances; and a transmission processing unit transmitting transmission data set by the transmission data setting unit to corresponding receiving devices of transmission targets all at once. The transmission data setting unit sets time when the device itself starts reproduction of the content data as a reference time, and sets the time information for synchronizing audio indicated by the content data reproduced in the device itself with audio indicated by the content data reproduced in the receiving devices for each receiving device using the set reference time.

    摘要翻译: 传输设备包括:通信单元,与一个或多个接收设备进行通信; 距离测量单元,测量到接收设备的直接距离; 传输数据设置单元,设置包括内容数据的传输数据,所述内容数据包括基于所测量的距离,针对距离被测量的接收设备开始重现内容数据的时间的音频和时间信息; 以及发送处理单元,其将由发送数据设定单元设定的发送数据一次发送到发送对象的对应的接收装置。 发送数据设定单元设定设备本身开始再现内容数据的时间作为参考时间,并且将由设备本身再现的内容数据指示的音频同步的时间信息设置为与在 使用设定的参考时间接收每个接收设备的设备。

    GRAFT COPOLYMER AND MOLD-RELEASING AGENT COMPRISING SAME AS ACTIVE INGREDIENT
    4.
    发明申请
    GRAFT COPOLYMER AND MOLD-RELEASING AGENT COMPRISING SAME AS ACTIVE INGREDIENT 有权
    共聚物和模具发酵剂包括相同的活性成分

    公开(公告)号:US20120090504A1

    公开(公告)日:2012-04-19

    申请号:US13376321

    申请日:2010-06-03

    IPC分类号: C09D7/12 C07C43/12

    摘要: Disclosed is a graft copolymer in which a polyalkylene glycol or an alkyl ether thereof is graft-copolymerized with a polyfluoro-1-alkene represented by the general formula: CnF2n+(CH2CF2)a(CF2CF2)bCH═CH2 (wherein n is an integer of 1 to 6, a is an integer of 1 to 4, and b is an integer of 1 to 3). The graft copolymer is an oligomer compound having a perfluoroalkyl group containing 6 or less carbon atoms, which is said to have low bioaccumulation potential, and having, when used as an active ingredient of a mold-releasing agent, mold release performance equivalent to that of a compound having a perfluoroalkyl group containing 8 or more carbon atoms.

    摘要翻译: 公开了一种接枝共聚物,其中聚亚烷基二醇或其烷基醚与下列通式表示的多氟-1-烯烃接枝共聚:CnF2n +(CH2CF2)a(CF2CF2)bCH = CH2(其中n为 1〜6,a为1〜4的整数,b为1〜3的整数)。 接枝共聚物是具有碳原子数6以下的全氟烷基的低聚物化合物,据说具有低的生物蓄积电位,作为脱模剂的活性成分使用时,脱模性能与 具有含有8个以上碳原子的全氟烷基的化合物。

    Terminally Iodized Polyfluoroalkane Oligomer and Process for Producing the Same
    6.
    发明申请
    Terminally Iodized Polyfluoroalkane Oligomer and Process for Producing the Same 审中-公开
    末端碘化多氟烷烃低聚物及其制备方法

    公开(公告)号:US20090018294A1

    公开(公告)日:2009-01-15

    申请号:US12224469

    申请日:2007-02-28

    IPC分类号: C08G61/02 C08F4/28

    CPC分类号: C07C19/16 C07C17/278

    摘要: A terminally iodized polyfluoroalkane oligomer represented by the following general formula: CnF2n+1(CH2CF2)s+p(CF2CF2)t+rI  [I] (wherein n is an integer of 1 to 6, s+p is an integer of 1 to 4, showing the number of vinylidene fluoride skeleton, and t+r is an integer of 1 to 6, showing the number of tetrafluoroethylene skeleton, the adjacent group to the CnF2n+1 group being the CH2CF2 group) can be produced by reaction of a terminally iodized polyfluoroalkane, represented by the following general formula: CnF2n+1(CH2CF2)s+p(CF2CF2)tI with tetrafluoroethylene in the presence of a peroxide initiator.

    摘要翻译: 由以下通式表示的末端碘化多氟烷烃低聚物:<?in-line-formula description =“In-line formula”end =“lead”?> CnF2n + 1(CH2CF2)s + p(CF2CF2)t + I] <?in-line-formula description =“In-line Formulas”end =“tail”?>(其中n为1〜6的整数,s + p为1〜4的整数, 偏氟乙烯骨架,t + r为1〜6的整数,表示四氟乙烯骨架的数量,CnF2n + 1组为CH2CF2组的相邻基团)可以通过末端碘化的多氟烷烃 以下通式:<?in-line-formula description =“In-line Formulas”end =“lead”?> CnF2n + 1(CH2CF2)s + p(CF2CF2)tI <?in-line-formula description =“ 在过氧化物引发剂存在下,使用四氟乙烯在线配方“end =”tail“?”。

    Semiconductor memory device facilitated with plural self-refresh modes
    7.
    发明授权
    Semiconductor memory device facilitated with plural self-refresh modes 失效
    具有多个自刷新模式的半导体存储器件

    公开(公告)号:US5467315A

    公开(公告)日:1995-11-14

    申请号:US234414

    申请日:1994-04-28

    摘要: The semiconductor memory is facilitated with control circuitry for effecting plural self-refresh modes having respectively different refresh periods. The plural self-refresh modes are typified by a PS (pseudo) refresh mode which is applied when the memory is in the nonselected state for a comparatively long period of time, such as in the state in which memory backup is being facilitated, and by a VS (virtual) refresh mode in which the refreshing operation of the memory cells is effected intermittently during the intervals of memory accessings. The pseudo refresh mode has a longer refresh time period than the virtual refresh mode. The control circuitry also has counter circuits for the generating of refresh address signals in accordance with a first timing signal indicative of a pseudo refresh mode and a second timing signal indicative of a virtual refresh mode, the latter timing signal being a higher frequency signal. Such availability of plural self-refresh modes becomes particularly advantageous when considering consumption of the back-up power for maintaining the IC memory device versus stability of stored data. While the consumption of the back-up power for maintaining the device would be relatively lower under one of the self-refresh modes, namely, the PS (pseudo) refresh mode, the stability of data stored would, however, be greater under another self-refresh mode, namely, the VS (virtual) refresh mode.

    摘要翻译: 利用用于实现分别具有不同刷新周期的多个自刷新模式的控制电路来促进半导体存储器。 多个自刷新模式以PS(伪)刷新模式为代表,当存储器处于非选择状态较长时间段时,例如在便于存储器备份的状态下,以及由 在存储器访问的间隔期间间歇地执行存储器单元的刷新操作的VS(虚拟)刷新模式。 伪刷新模式具有比虚拟刷新模式更长的刷新时间段。 控制电路还具有用于根据指示伪刷新模式的第一定时信号和指示虚拟刷新模式的第二定时信号产生刷新地址信号的计数器电路,后一定时信号是较高频率信号。 当考虑用于维持IC存储器件的备用电源与存储的数据的稳定性的消耗时,这种多重自刷新模式的可用性变得特别有利。 虽然在自刷新模式之一(即PS)(伪)刷新模式下,用于维持设备的备份功率的消耗将相对较低,但是存储的数据的稳定性在另一个自身下将更大 - 刷新模式,即VS(虚拟)刷新模式。

    Semiconductor memory device
    8.
    发明授权
    Semiconductor memory device 失效
    半导体存储器件

    公开(公告)号:US5436870A

    公开(公告)日:1995-07-25

    申请号:US283177

    申请日:1994-08-03

    CPC分类号: G11C7/18 G11C7/1075 G11C8/10

    摘要: A multiport memory is provided which permits both random access and serial access. In order to reduce parasitic capacitance and improve operating speed, the serial input/output lines are each divided into two parts at their middle points. Sense amplifiers for the serial input/output lines are provided at upper and lower ends of the serial access memory elements to respectively amplify signals from the divided lines. Additional features are provided for improving both the serial and random operation. For example, during the serial read mode, the column selector for random access is simultaneously operated, and read data passing through the random access column selector is used as head data for the serial output operation to be delivered through the serial output circuit. Also, a serial selector can be controlled by a select signal formed by a Gray Code counter to improve operating speed. Further features included a redundancy system for relief of defective bits, the use of common bit lines to improve integration density and an improved refreshing arrangement to reduce power consumption during the refresh mode.

    摘要翻译: 提供多端口存储器,允许随机访问和串行访问。 为了减少寄生电容并提高工作速度,串行输入/输出线在其中间点分为两部分。 用于串行输入/输出线的读出放大器设置在串行存取存储器元件的上端和下端,以分别放大来自分割线的信号。 提供了另外的功能来改进串行和随机操作。 例如,在串行读取模式期间,用于随机存取的列选择器被同时操作,并且通过随机存取列选择器的读数据被用作通过串行输出电路传送的串行输出操作的头数据。 此外,串行选择器可以由格雷码计数器形成的选择信号控制,以提高操作速度。 其他特征包括用于缓解缺陷位的冗余系统,使用公共位线来提高集成密度以及改进的刷新布置以减少刷新模式期间的功耗。

    Semiconductor memory
    9.
    发明授权
    Semiconductor memory 失效
    半导体存储器

    公开(公告)号:US5404337A

    公开(公告)日:1995-04-04

    申请号:US124001

    申请日:1993-09-21

    申请人: Katsuyuki Sato

    发明人: Katsuyuki Sato

    IPC分类号: G11C7/10 G11C11/4096 G11C8/00

    CPC分类号: G11C7/1075 G11C11/4096

    摘要: A semiconductor memory, such as, of a dual-port type includes dynamic RAM cells, such as of the single-transistor, single-capacitor type in which each such cell is coupled to one data line of a corresponding pair of data lines and a word line. The memory has a plurality of sense amplifiers which are coupled to a the plurality of data line pairs, respectively, a plurality of switches respectively coupled between the plurality of data lines and a common data line for providing either a selective or simultaneous connection of the plurality of pairs of data lines to the common data line during a first write mode and a second write mode, respectively. The disclosed memory also has a write circuit coupled between an external input/output terminal and a common data line and provides a first write signal which has a first two-level signal range in accordance with the first write mode and a second write signal having a second two-level signal range different from that of the first-signal range in accordance with the second write mode. The semiconductor memory is also used for storing image data and is provided with a serial output circuit having a converter coupling the plurality of data lines therethrough to a serial input/output port external terminal.

    摘要翻译: 诸如双端口类型的半导体存储器包括诸如单晶体管单电容器类型的动态RAM单元,其中每个这样的单元耦合到相应的一对数据线的一个数据线,以及 字线。 存储器具有多个读出放大器,其分别耦合到多个数据线对,分别耦合在多条数据线之间的多个开关和用于提供多个数据线的选择性或同时连接的公共数据线 分别在第一写入模式和第二写入模式期间将数据线对分配给公共数据线。 所公开的存储器还具有耦合在外部输入/输出端子和公共数据线之间的写入电路,并提供具有根据第一写入模式的第一两级信号范围的第一写信号和具有第 第二二级信号范围与根据第二写入模式的第一信号范围不同。 半导体存储器还用于存储图像数据,并且具有串行输出电路,该串行输出电路具有将多个数据线耦合到串行输入/输出端口外部端子的转换器。

    Semiconductor memory device
    10.
    发明授权
    Semiconductor memory device 失效
    半导体存储器件

    公开(公告)号:US5115413A

    公开(公告)日:1992-05-19

    申请号:US496258

    申请日:1990-03-20

    CPC分类号: G11C7/18 G11C7/1075 G11C8/10

    摘要: A multiport memory is provided which permits both random access and serial access. In order to reduce parasitic capacitance and improve operating speed, the serial input/output lines are each divided into two parts at their middle points. Sense amplifiers for the serial input/output lines are provided at upper and lower ends of the serial access memory elements to respectively amplify signals from the divided lines. Additional features are provided for improving both the serial and random operation. For example, during the serial read mode, the column selector for random access is simultaneously operated, and read data passing through the random access column selector is used as head data for the serial output operation to be delivered through the serial output circuit. Also, a serial selector can be controlled by a select signal formed by a Gray Code counter to improve operating speed. Further features include a redundancy system for relief of defective bits, the use of common bit lines to improve integration density and an improved refreshing arrangement to reduce power consumption during the refresh mode.

    摘要翻译: 提供多端口存储器,允许随机访问和串行访问。 为了减少寄生电容并提高工作速度,串行输入/输出线在其中间点分为两部分。 用于串行输入/输出线的读出放大器设置在串行存取存储器元件的上端和下端,以分别放大来自分割线的信号。 提供了另外的功能来改进串行和随机操作。 例如,在串行读取模式期间,用于随机存取的列选择器被同时操作,并且通过随机存取列选择器的读数据被用作通过串行输出电路传送的串行输出操作的头数据。 此外,串行选择器可以由格雷码计数器形成的选择信号控制,以提高操作速度。 其他特征包括用于缓解缺陷位的冗余系统,使用公共位线来提高集成密度,以及改进的刷新布置以减少刷新模式期间的功耗。