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公开(公告)号：US07649412B2
公开(公告)日：2010-01-19
申请号：US11921504
申请日：2006-07-31
IPC分类号： H03F3/68
CPC分类号： H03F1/0288
摘要： When an input signal level is small, the electrical length of a phase line 21 and the electrical length of a phase line 23 are set in such a manner that the impedance seen by looking into the output side from an impedance reference point 11 at the output side of a carrier amplifier 3 becomes 2R+α (where R is a load resistance and α is positive), and the electrical length of a phase line 22 is set at a difference between the electrical length of the phase line 21 and the electrical length of the phase line 23.
摘要翻译： 当输入信号电平小时，相线21的电长度和相线23的电长度被设定为使得通过在输出处从阻抗参考点11观察输出侧看到的阻抗 载波放大器3的一侧变为2R +α（其中R是负载电阻，α为正），相线22的电长度被设定为相线21的电长度与电长度 的相线23。
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公开(公告)号：US20090206926A1
公开(公告)日：2009-08-20
申请号：US11921504
申请日：2006-07-31
IPC分类号： H03F3/68
CPC分类号： H03F1/0288
摘要： When an input signal level is small, the electrical length of a phase line 21 and the electrical length of a phase line 23 are set in such a manner that the impedance seen by looking into the output side from an impedance reference point 11 at the output side of a carrier amplifier 3 becomes 2R+α (where R is a load resistance and α is positive), and the electrical length of a phase line 22 is set at a difference between the electrical length of the phase line 21 and the electrical length of the phase line 23.
摘要翻译： 当输入信号电平小时，相线21的电长度和相线23的电长度被设定为使得通过在输出处从阻抗参考点11观察输出侧看到的阻抗 载波放大器3的一侧变为2R +α（其中R是负载电阻，α为正），相线22的电长度被设定为相线21的电长度与电长度 的相线23。
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公开(公告)号：US08072288B2
公开(公告)日：2011-12-06
申请号：US12531553
申请日：2008-04-11
摘要： A directional coupler capable of improving a directionality of a directional coupler body including four terminals. The directional coupler includes a directional coupler body including the four terminals of an input port, an output port, a coupling port, and an isolation port; and a combiner for combining powers of an output signal of the coupling port and an output signal of the isolation port of the directional coupler body; and a directionality improving circuit for amplifying or attenuating at least one of the output signal of the coupling port and the output signal of the isolation port before outputting the same, and the combiner combines powers of the output signals amplified or attenuated by the directionality improving circuit.
摘要翻译： 一种定向耦合器，其能够改善包括四个端子的定向耦合器主体的方向性。 定向耦合器包括定向耦合器主体，其包括输入端口，输出端口，耦合端口和隔离端口的四个端子; 以及组合器，用于组合耦合端口的输出信号的功率和定向耦合器主体的隔离端口的输出信号; 以及用于在输出耦合端口的输出信号和隔离端口的输出信号之前放大或衰减至少一个输出信号的方向性改善电路，并且组合器组合由方向性改进电路放大或衰减的输出信号的功率 。
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公开(公告)号：US20100097160A1
公开(公告)日：2010-04-22
申请号：US12531553
申请日：2008-04-11
IPC分类号： H01P5/18
摘要： A directional coupler capable of improving a directionality of a directional coupler body including four terminals. The directional coupler includes a directional coupler body including the four terminals of an input port, an output port, a coupling port, and an isolation port; and a combiner for combining powers of an output signal of the coupling port and an output signal of the isolation port of the directional coupler body; and a directionality improving circuit for amplifying or attenuating at least one of the output signal of the coupling port and the output signal of the isolation port before outputting the same, and the combiner combines powers of the output signals amplified or attenuated by the directionality improving circuit.
摘要翻译： 一种定向耦合器，其能够改善包括四个端子的定向耦合器主体的方向性。 定向耦合器包括定向耦合器主体，其包括输入端口，输出端口，耦合端口和隔离端口的四个端子; 以及组合器，用于组合耦合端口的输出信号的功率和定向耦合器主体的隔离端口的输出信号; 以及用于在输出耦合端口的输出信号和隔离端口的输出信号之前放大或衰减至少一个输出信号的方向性改善电路，并且组合器组合由方向性改进电路放大或衰减的输出信号的功率 。
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5.发明授权Low distortion amplifier and Doherty amplifier using low distortion amplifier 有权低失真放大器和Doherty放大器采用低失真放大器公开(公告)号：US08149060B2
公开(公告)日：2012-04-03
申请号：US12933509
申请日：2008-03-25
申请人： Kazuhisa Yamauchi , Hifumi Noto , Akira Inoue , Tomokazu Hamada , Masatoshi Nakayama , Kenichi Horiguchi
发明人： Kazuhisa Yamauchi , Hifumi Noto , Akira Inoue , Tomokazu Hamada , Masatoshi Nakayama , Kenichi Horiguchi
IPC分类号： H03F3/68
CPC分类号： H03F3/195 , H03F1/0288 , H03F1/3205 , H03F1/565 , H03F3/601 , H03F2200/387 , H03F2200/451
摘要： Provided is a low distortion amplifier which can satisfy both securement of a setting space in a vicinity of a transistor and low impedance. The low distortion amplifier includes a short stub having a leading end thereof short-circuited with a high-frequency short-circuit element and a low-frequency short-circuit element, in which the short stub is connected to a vicinity of at least one of a gate terminal and a drain terminal of the transistor, and includes a plurality of branched lines, the plurality of branched lines each having a leading end thereof short-circuited with the high-frequency short-circuit element and the low-frequency short-circuit element.
摘要翻译： 提供了能够满足晶体管附近的设定空间的固定和低阻抗的低失真放大器。 低失真放大器包括其短端与高频短路元件和低频短路元件短路的短路短路短路短路元件，短路短路元件连接到至少一个 晶体管的栅极端子和漏极端子，并且包括多条分支线路，所述多条分支线路的前端与高频短路元件和低频短路元件短路 元件。
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6.发明申请LOW DISTORTION AMPLIFIER AND DOHERTY AMPLIFIER USING LOW DISTORTION AMPLIFIER 有权低失真放大器和使用低失真放大器的DOHERTY放大器公开(公告)号：US20110012681A1
公开(公告)日：2011-01-20
申请号：US12933509
申请日：2008-03-25
申请人： Kazuhisa Yamauchi , Hifumi Noto , Akira Inoue , Tomokazu Hamada , Masatoshi Nakayama , Kenichi Horiguchi
发明人： Kazuhisa Yamauchi , Hifumi Noto , Akira Inoue , Tomokazu Hamada , Masatoshi Nakayama , Kenichi Horiguchi
IPC分类号： H03F3/68
CPC分类号： H03F3/195 , H03F1/0288 , H03F1/3205 , H03F1/565 , H03F3/601 , H03F2200/387 , H03F2200/451
摘要： Provided is a low distortion amplifier which can satisfy both securement of a setting space in a vicinity of a transistor and low impedance. The low distortion amplifier includes a short stub having a leading end thereof short-circuited with a high-frequency short-circuit element and a low-frequency short-circuit element, in which the short stub is connected to a vicinity of at least one of a gate terminal and a drain terminal of the transistor, and includes a plurality of branched lines, the plurality of branched lines each having a leading end thereof short-circuited with the high-frequency short-circuit element and the low-frequency short-circuit element.
摘要翻译： 提供了能够满足晶体管附近的设定空间的固定和低阻抗的低失真放大器。 低失真放大器包括其短端与高频短路元件和低频短路元件短路的短路短路短路短路元件，短路短路元件连接到至少一个 晶体管的栅极端子和漏极端子，并且包括多条分支线，多条分支线路的前端与高频短路元件短路，低频短路 元件。
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7.发明申请公开(公告)号：US20130175544A1
公开(公告)日：2013-07-11
申请号：US13824357
申请日：2010-11-10
申请人： Toshiyuki Oishi , Hiroshi Otsuka , Koji Yamanaka , Kazuhisa Yamauchi , Masatake Hangai , Masatoshi Nakayama
发明人： Toshiyuki Oishi , Hiroshi Otsuka , Koji Yamanaka , Kazuhisa Yamauchi , Masatake Hangai , Masatoshi Nakayama
CPC分类号： H01L29/2003 , H01L21/0254 , H01L29/0607 , H01L29/0657 , H01L29/205 , H01L29/7786
摘要： It is an object to attain both high gain and a broad band (that is, to attain both reduction in a gate-drain capacitance and reduction in a source-drain capacitance). Provided is a semiconductor device, including: a GaN channel layer (3) through which electrons travel; a barrier layer (4) which is provided on the GaN channel layer in order to form two-dimensional electron gas in the GaN channel layer and which contains at least any one of In, Al, and Ga and contains N; a gate electrode (8), a source electrode (6), and a drain electrode (7); and a plate (20) formed of a material having polarization, which is provided between the gate electrode (8) and the drain electrode (7), the plate being held in contact with a part of the barrier layer (4).
摘要翻译： 本发明的目的是获得高增益和宽带（即，获得栅极 - 漏极电容的减小和源极 - 漏极电容的减小）。 提供了一种半导体器件，包括：电子行进通过的GaN沟道层（3）; 阻挡层（4），其设置在所述GaN沟道层上，以在所述GaN沟道层中形成二维电子气，并且其包含In，Al和Ga中的至少任一个并且包含N; 栅电极（8），源电极（6）和漏电极（7）; 以及设置在所述栅极（8）和所述漏电极（7）之间的具有偏振材料的板（20），所述板与所述阻挡层（4）的一部分保持接触。
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公开(公告)号：US07557654B2
公开(公告)日：2009-07-07
申请号：US11660136
申请日：2004-10-28
CPC分类号： H03F1/3276 , H03F1/3223 , H03F2200/468
摘要： A linearizer changes a gain characteristic to a valley characteristic in which a gain reduces and then increases. The linearizer includes: a signal path in which an RF signal input terminal an input side bias blocking capacitor, a diode pair, including diodes having opposite polarities to each other, an output side bias blocking capacitor and an RF signal output terminal in series in the stated order; a bias circuit in which a resistor is provided between and a signal path formed between the input side bias blocking capacitor and the diode pair and a bias terminal; an RF short-circuiting capacitor whose one end is connected with the bias circuit between the bias terminal and the resistor and whose other end is grounded; and a DC feed inductor whose one end is connected with the signal path between the diode pair and the output side bias blocking capacitor and whose other end is grounded.
摘要翻译： 线性化器将增益特性改变为增益减小然后增加的谷特性。 线性化装置包括：信号路径，其中RF信号输入端子，输入侧偏置阻塞电容器，二极管对，包括彼此具有相反极性的二极管，输出侧偏置阻塞电容器和RF信号输出端子串联连接 命令; 在其间设置有电阻器和在输入侧偏置阻断电容器和二极管对之间形成的信号路径和偏置端子之间的偏置电路; RF短路电容器，其一端与偏置端子和电阻器之间的偏置电路连接，另一端接地; 以及直流馈电电感，其一端与二极管对和输出侧偏压电容之间的信号路径连接，另一端接地。
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公开(公告)号：US07893770B2
公开(公告)日：2011-02-22
申请号：US12518664
申请日：2007-12-05
申请人： Kazuhisa Yamauchi , Yuji Sakai , Koichi Fujisaki , Akira Inoue
发明人： Kazuhisa Yamauchi , Yuji Sakai , Koichi Fujisaki , Akira Inoue
IPC分类号： H03F3/68
CPC分类号： H03F1/0238 , H03F1/0244 , H03F1/0288
摘要： Provided is a power amplification device including: a DC power supply that outputs a drain voltage; a Doherty amplifier including a carrier amplifier and a peak amplifier, which are connected in parallel, and amplifies an RF signal; a voltage control circuit that outputs a first instruction to output a low voltage when an output power is equal to or lower than a given value, and outputs a second instruction to output a high voltage when the output power is larger than the given value; and a voltage converter circuit that converts the drain voltage to a voltage lower than the drain voltage and applies the converted voltage to drain terminals of the carrier amplifier and the peak amplifier according to the first instruction, and applies the drain voltage directly to the drain terminals of the carrier amplifier and the peak amplifier according to the second instruction.
摘要翻译： 提供了一种功率放大装置，包括：输出漏极电压的直流电源; 包括并联连接的载波放大器和峰值放大器的Doherty放大器，并放大RF信号; 电压控制电路，当输出功率等于或低于给定值时，输出第一指令以输出低电压，并且当输出功率大于给定值时输出第二指令以输出高电压; 以及电压转换器电路，其将漏极电压转换为低于漏极电压的电压，并根据第一指令将转换的电压施加到载波放大器和峰值放大器的漏极端子，并将漏极电压直接施加到漏极端子 的载波放大器和峰值放大器。
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公开(公告)号：US4402763A
公开(公告)日：1983-09-06
申请号：US252017
申请日：1981-04-08
摘要： A heat-resistant aluminum alloy for electrical use, having high heat resistance and conductivity, obtained by subjecting an Al-Zr alloy comprising 0.23-0.35% Zr, the balance consisting of ordinary impurities and aluminum, to melting, casting, hot rolling in the state of high temperature or continuous heating, cold working to a predetermined size, ageing at a temperature within the range of 310.degree. C.-390.degree. C. for 50-400 hours so that Al.sub.3 Zr is dispersed uniformly and in fine particles, and, optionally, further cold working to a degree not exceeding 30% of reduction of area. The resultant aluminum alloy has conductivity in excess of 58% IACS, same strength as 1350 aluminum wire, and 10% softening temperature higher than 400.degree. C. at one hour annealing.
摘要翻译： 通过使包含0.23-0.35％Zr的Al-Zr合金（其余由普通杂质和铝组成）进行熔融，铸造，热轧，得到耐热性和导电性高的耐热铝合金 高温或连续加热状态，冷加工至预定尺寸，在310℃-390℃的温度范围内老化50-400小时，使得Al 3 Zr均匀分散在细颗粒中， 可选地，进一步的冷加工到不超过面积减少30％的程度。 所得铝合金在1小时退火时具有超过58％IACS的导电性，与1350铝线相同的强度和高于400℃的10％软化温度。
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