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公开(公告)号：US20140158532A1
公开(公告)日：2014-06-12
申请号：US14235865
申请日：2012-09-05
IPC分类号： C23C14/14
CPC分类号： C23C14/14 , C22C9/05 , C23C14/3414 , H01J37/3426
摘要： Provided is a high-purity copper-manganese-alloy sputtering target comprising 0.05 to 20 wt. % of Mn, 2 wt ppm or less of C, and the remainder being Cu and inevitable impurities, wherein in formation of a film on a wafer by sputtering the target, the number of particles composed of C, at least one element selected from Mn, Si, and Mg, or a compound composed of C and at least one element selected from Mn, Si, and Mg and having a diameter of 0.20 μm or more is 30 or less on average. Particle generation during sputtering can be effectively suppressed by thus adding an appropriate amount of Mn element to copper and controlling the amount of carbon. In particular, a high-purity copper-manganese-alloy sputtering target that is useful for forming semiconductor copper alloy line having a self-diffusion suppression function is provided.
摘要翻译： 提供了一种高纯度铜 - 锰合金溅射靶，其包含0.05-20重量％ Mn为2重量ppm以下，余量为Cu和不可避免的杂质，其中，在通过溅射靶材在晶片上形成膜时，由C组成的微粒数，选自Mn中的至少一种元素 ，Si和Mg，或由C和至少一种选自Mn，Si和Mg的元素组成的化合物，直径为0.20μm以上的化合物的平均值为30以下。 通过向铜中添加适量的Mn元素并控制碳的量，能够有效地抑制溅射时的粒子产生。 特别地，提供了可用于形成具有自扩散抑制功能的半导体铜合金线的高纯度铜 - 锰合金溅射靶。
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公开(公告)号：US20140097084A1
公开(公告)日：2014-04-10
申请号：US14118591
申请日：2012-09-06
IPC分类号： C23C14/34
CPC分类号： C23C14/3414 , C22C9/05 , C22F1/00 , C22F1/08
摘要： Provided is a high-purity copper-manganese-alloy sputtering target comprising 0.05 to 20 wt % of Mn and the remainder being Cu and inevitable impurities. The high-purity copper-manganese-alloy sputtering target is characterized in that the in-plane variation (CV value) in Mn concentration of the target is 3% or less. It is thus possible to form a thin film having excellent uniformity by adding an appropriate amount of a Mn element to copper and reducing the in-plane variation of the sputtering target. In particular, there is provided a high-purity copper-manganese-alloy sputtering target which is useful for improving the yield and the reliability of semiconductor products which are making progress in a degree of refinement and integration.
摘要翻译： 提供了包含0.05〜20重量％的Mn，余量为Cu和不可避免的杂质的高纯度铜 - 锰合金溅射靶。 高纯度铜锰合金溅射靶的特征在于靶的Mn浓度的面内变化（CV值）为3％以下。 因此，通过向铜中添加适量的Mn元素并降低溅射靶的面内变化，可以形成具有优异均匀性的薄膜。 特别是提供了一种高纯度的铜 - 锰合金溅射靶，其可用于提高在细化和集成度方面取得进步的半导体产品的产率和可靠性。
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公开(公告)号：US20140318953A1
公开(公告)日：2014-10-30
申请号：US14348174
申请日：2012-09-12
CPC分类号： H01J37/3435 , B21D53/00 , C22C9/05 , C23C14/3407 , C23C14/3414 , H01J37/3414 , H01J37/3426
摘要： A backing plate integrated sputtering target includes a flange part having a Vicker's hardness (Hv) of 90 or more and a 0.2% yield stress of 6.98×107 N/m2 or more. Enhancing the mechanical strength of only the flange part of the target inhibits the target from being deformed during sputtering, and further, does not vary the original sputtering characteristics. Consequently, the target can form a thin film having excellent uniformity. This can improve the yield and the reliability of semiconductor products, which have been progressing in miniaturization and integration.
摘要翻译： 背板集成溅射靶包括具有维氏硬度（Hv）为90以上且0.2％屈服应力为6.98×10 7 N / m 2以上的凸缘部。 仅提高目标的凸缘部分的机械强度可以抑制靶在溅射过程中变形，而且不改变原始溅射特性。 因此，靶可以形成均匀性优异的薄膜。 这可以提高半导体产品的产量和可靠性，这在小型化和集成化方面一直在进步。
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公开(公告)号：US09704695B2
公开(公告)日：2017-07-11
申请号：US14348174
申请日：2012-09-12
CPC分类号： H01J37/3435 , B21D53/00 , C22C9/05 , C23C14/3407 , C23C14/3414 , H01J37/3414 , H01J37/3426
摘要： A backing plate integrated sputtering target includes a flange part having a Vicker's hardness (Hv) of 90 or more and a 0.2% yield stress of 6.98×107 N/m2 or more. Enhancing the mechanical strength of only the flange part of the target inhibits the target from being deformed during sputtering, and further, does not vary the original sputtering characteristics. Consequently, the target can form a thin film having excellent uniformity. This can improve the yield and the reliability of semiconductor products, which have been progressing in miniaturization and integration.
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公开(公告)号：US09090970B2
公开(公告)日：2015-07-28
申请号：US14118591
申请日：2012-09-06
CPC分类号： C23C14/3414 , C22C9/05 , C22F1/00 , C22F1/08
摘要： Provided is a high-purity copper-manganese-alloy sputtering target comprising 0.05 to 20 wt % of Mn and the remainder being Cu and inevitable impurities. The high-purity copper-manganese-alloy sputtering target is characterized in that the in-plane variation (CV value) in Mn concentration of the target is 3% or less. It is thus possible to form a thin film having excellent uniformity by adding an appropriate amount of a Mn element to copper and reducing the in-plane variation of the sputtering target. In particular, there is provided a high-purity copper-manganese-alloy sputtering target which is useful for improving the yield and the reliability of semiconductor products which are making progress in a degree of refinement and integration.
摘要翻译： 提供了包含0.05〜20重量％的Mn，余量为Cu和不可避免的杂质的高纯度铜 - 锰合金溅射靶。 高纯度铜锰合金溅射靶的特征在于靶的Mn浓度的面内变化（CV值）为3％以下。 因此，通过向铜中添加适量的Mn元素并降低溅射靶的面内变化，可以形成具有优异均匀性的薄膜。 特别是提供了一种高纯度的铜 - 锰合金溅射靶，其可用于提高在细化和集成度方面取得进步的半导体产品的产率和可靠性。
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公开(公告)号：US20140027277A1
公开(公告)日：2014-01-30
申请号：US14009537
申请日：2012-02-03
申请人： Nobuhito Makino , Takeo Okabe , Shiro Tsukamoto
发明人： Nobuhito Makino , Takeo Okabe , Shiro Tsukamoto
IPC分类号： C23C14/14
CPC分类号： H01J37/3426 , C22C14/00 , C22F1/183 , C23C14/3407 , C23C14/3414 , H01J37/3429
摘要： A high-purity titanium target for sputtering, which contains, as additive components, one or more elements selected from Al, Si, S, Cl, Cr, Fe, Ni, As, Zr, Sn, Sb, B, and La in a total amount of 3 to 100 mass ppm, and of which the purity excluding additive components and gas components is 99.99 mass % or higher. An object of this invention is to provide a high-quality titanium target for sputtering, which is free from fractures and cracks during high-power sputtering (high-rate sputtering) and capable of stabilizing the sputtering characteristics.
摘要翻译： 一种用于溅射的高纯度钛靶，其包含作为添加成分的一种或多种选自Al，Si，S，Cl，Cr，Fe，Ni，As，Zr，Sn，Sb，B和La中的一种元素 总量为3〜100质量ppm，除添加成分和气体成分以外的纯度为99.99质量％以上。 本发明的目的是提供一种用于溅射的高质量钛靶，其在高功率溅射（高速溅射）期间没有裂缝和裂纹，并且能够稳定溅射特性。
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公开(公告)号：US09530628B2
公开(公告)日：2016-12-27
申请号：US14009537
申请日：2012-02-03
申请人： Nobuhito Makino , Takeo Okabe , Shiro Tsukamoto
发明人： Nobuhito Makino , Takeo Okabe , Shiro Tsukamoto
CPC分类号： H01J37/3426 , C22C14/00 , C22F1/183 , C23C14/3407 , C23C14/3414 , H01J37/3429
摘要： A high-purity titanium target for sputtering, which contains, as additive components, one or more elements selected from Al, Si, S, Cl, Cr, Fe, Ni, As, Zr, Sn, Sb, B, and La in a total amount of 3 to 100 mass ppm, and of which the purity excluding additive components and gas components is 99.99 mass % or higher. An object of this invention is to provide a high-quality titanium target for sputtering, which is free from fractures and cracks during high-power sputtering (high-rate sputtering) and capable of stabilizing the sputtering characteristics.
摘要翻译： 一种用于溅射的高纯度钛靶，其包含作为添加成分的一种或多种选自Al，Si，S，Cl，Cr，Fe，Ni，As，Zr，Sn，Sb，B和La中的一种元素 总量为3〜100质量ppm，除添加成分和气体成分以外的纯度为99.99质量％以上。 本发明的目的是提供一种用于溅射的高质量钛靶，其在高功率溅射（高速溅射）期间没有裂缝和裂纹，并且能够稳定溅射特性。
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公开(公告)号：US09951412B2
公开(公告)日：2018-04-24
申请号：US13809189
申请日：2011-07-27
申请人： Kenichi Nagata , Nobuhito Makino
发明人： Kenichi Nagata , Nobuhito Makino
IPC分类号： C23C14/00 , C23C14/34 , C21D1/74 , C21D3/06 , C22C14/00 , C22F1/00 , C22F1/18 , C22C27/02 , H01J37/34
CPC分类号： C23C14/34 , C21D1/74 , C21D3/06 , C22C14/00 , C22C27/02 , C22F1/00 , C22F1/18 , C22F1/183 , C23C14/3414 , C23C14/3471 , H01J37/3426 , H01J37/3464 , H01J37/3491 , H01J37/3497 , Y10T29/49865
摘要： Provided is a sputtering target and/or a coil disposed at the periphery of a plasma-generating region for confining plasma. The target and/or the coil has a surface to be eroded having a hydrogen content of 500 μL/cm2 or less. In dealing with reduction in the hydrogen content of the surface of the target and/or the coil, the process of producing the target and/or the coil, in particular, the conditions for heating the surface of the target and/or the coil, which is thought to be cause of hydrogen occlusion, are appropriately regulated. As a result, hydrogen occlusion at the surface of the target can be reduced, and the degree of vacuum during sputtering can be improved. Thus, the present invention provides a target and/or a coil that has a uniform and fine structure, makes plasma stable, and allows a film to be formed with excellent uniformity and provides a method of producing the target and/or the coil.
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公开(公告)号：US20130112556A1
公开(公告)日：2013-05-09
申请号：US13809189
申请日：2011-07-27
申请人： Kenichi Nagata , Nobuhito Makino
发明人： Kenichi Nagata , Nobuhito Makino
IPC分类号： C23C14/34
CPC分类号： C23C14/34 , C21D1/74 , C21D3/06 , C22C14/00 , C22C27/02 , C22F1/00 , C22F1/18 , C22F1/183 , C23C14/3414 , C23C14/3471 , H01J37/3426 , H01J37/3464 , H01J37/3491 , H01J37/3497 , Y10T29/49865
摘要： Provided is a sputtering target and/or a coil disposed at the periphery of a plasma-generating region for confining plasma. The target and/or the coil has a surface to be eroded having a hydrogen content of 500 μL/cm2 or less. In dealing with reduction in the hydrogen content of the surface of the target and/or the coil, the process of producing the target and/or the coil, in particular, the conditions for heating the surface of the target and/or the coil, which is thought to be cause of hydrogen occlusion, are appropriately regulated. As a result, hydrogen occlusion at the surface of the target can be reduced, and the degree of vacuum during sputtering can be improved. Thus, the present invention provides a target and/or a coil that has a uniform and fine structure, makes plasma stable, and allows a film to be formed with excellent uniformity and provides a method of producing the target and/or the coil.
摘要翻译： 设置有用于限制等离子体的等离子体产生区域的周边处的溅射靶和/或线圈。 靶和/或线圈具有氢含量为500μA/ cm 2以下的要被侵蚀的表面。 在处理靶和/或线圈的表面的氢含量的降低时，制造靶材和/或线圈的工艺，特别是加热靶材和/或线圈表面的条件， 这被认为是氢气闭塞的原因，被适当地调节。 结果，能够降低靶的表面的氢气闭塞，能够提高溅射时的真空度。 因此，本发明提供了具有均匀和精细结构的靶和/或线圈，使得等离子体稳定，并且允许形成具有优异均匀性的膜，并提供了制造靶材和/或线圈的方法。
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公开(公告)号：US09666418B2
公开(公告)日：2017-05-30
申请号：US14353507
申请日：2012-04-27
申请人： Shiro Tsukamoto , Nobuhito Makino , Atsushi Fukushima , Kazuto Yagi , Eiji Hino
发明人： Shiro Tsukamoto , Nobuhito Makino , Atsushi Fukushima , Kazuto Yagi , Eiji Hino
CPC分类号： H01J37/3426 , C22C1/10 , C22C14/00 , C23C14/3414
摘要： A high-purity titanium target for sputtering containing 0.5 to 5 mass ppm of S as an additive component, wherein the purity of the target excluding additive components and gas components is 99.995 mass percent or higher. An object of this invention is to provide a high-quality titanium target for sputtering which is free from fractures and cracks during high-power sputtering (high-rate sputtering) and is capable of stabilizing the sputtering characteristics.
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