公开(公告)号：US06602646B1

公开(公告)日：2003-08-05

申请号：US09684888

申请日：2000-10-06

申请人： Kenichiro Sato ,  Kunihiko Kodama ,  Toshiaki Aoai

发明人： Kenichiro Sato ,  Kunihiko Kodama ,  Toshiaki Aoai

IPC分类号： G03F7004

CPC分类号： G03F7/039 ,  G03F7/0045 ,  Y10S430/106

摘要： The present invention provides a high sensitivity chemically amplified positive-working resist composition which eliminates edge roughness on pattern and provides an excellent resist pattern profile. A novel positive-working resist composition is provided comprising (A) a resin containing an alkali-soluble group protected by at least one of moieties containing alicyclic hydrocarbon represented by general formulae (pI) to (pVI) and having a monomer component content of 5% or less of the total pattern area as determined by gel permeation chromatography (GPC), which increases in its solution velocity with respect to an alkaline developer by the action of an acid and (B) a compound which is capable of generating an acid by irradiation with an active ray or radiation.

摘要翻译： 本发明提供一种消除图案上的边缘粗糙度并提供优异的抗蚀剂图案轮廓的高灵敏度化学放大正性抗蚀剂组合物。 提供了一种新型的正性抗蚀剂组合物，其包含（A）含有由至少一个含有由通式（pI）至（pVI）表示的脂环族烃部分并且单体组分含量为5的部分保护的碱溶性基团的树脂 通过凝胶渗透色谱法（GPC）确定的总图案面积的百分比或更少，其通过酸的作用相对于碱性显影剂的溶液速度增加，和（B）能够产生酸的化合物 用活性射线或辐射照射。

公开(公告)号：US06576392B1

公开(公告)日：2003-06-10

申请号：US09456827

申请日：1999-12-06

申请人： Kenichiro Sato ,  Kunihiko Kodama ,  Toshiaki Aoai ,  Hidekazu Ohashi

发明人： Kenichiro Sato ,  Kunihiko Kodama ,  Toshiaki Aoai ,  Hidekazu Ohashi

IPC分类号： G03C173

CPC分类号： G03F7/0045 ,  G03F7/0397 ,  Y10S430/106 ,  Y10S430/111 ,  Y10S430/115

摘要： A positive photoresist composition comprising a photo-acid gererator and a specific resin. The resin contains repeating units each having a group represented by formula (I): —SO2—O—R wherein R represents an optionally substituted alkyl, cycloalkyl, or alkenyl group and comes to have an increased rate of dissolution in an alkaline developing solution by the action of an acid, or contains alkali-soluble groups protected by partial structures containing an alicyclic hydrocarbon and represented by at least one of formulae (pI) to (pVI) defined in the specification and which decomposes by the action of an acid to have enhanced solubility in an alkali. The latter is used in combination with a compound which decomposes by the action of an acid to generate a sulfonic acid.

摘要翻译： 一种正型光致抗蚀剂组合物，其包含光酸注射器和特定树脂。 树脂含有各自具有由式（I）表示的基团的重复单元：其中R表示任选取代的烷基，环烷基或烯基，并且通过酸的作用使碱显影溶液的溶解速率增加， 或含有由说明书中定义的至少一种式（pI）至（pVI）表示的含有脂环族烃的部分结构保护的碱溶性基团，其通过酸的作用而分解，从而具有增强的在碱中的溶解度。 后者与通过酸的作用分解以产生磺酸的化合物组合使用。

公开(公告)号：US06517991B1

公开(公告)日：2003-02-11

申请号：US09606681

申请日：2000-06-30

申请人： Kunihiko Kodama ,  Kenichiro Sato ,  Toshiaki Aoai

发明人： Kunihiko Kodama ,  Kenichiro Sato ,  Toshiaki Aoai

IPC分类号： G03F7004

CPC分类号： G03F7/0397 ,  G03F7/0045 ,  Y10S430/106 ,  Y10S430/111

摘要： A positive photosensitive composition comprising (A) a compound which generates an acid upon irradiation with an actinic ray or radiation, and (B-1) a resin having a group which is decomposed by the action of an acid to increase solubility in an alkaline developing solution and containing at least one structure represented by formulae (I), (II) and (III) as described in the specification or (B-2) a resin having at least one monovalent polyalicyclic group represented by formula (Ib) as described in the specification and a group which is decomposed by the action of an acid to increase solubility in an alkaline developing solution. The positive photosensitive composition containing the resin according to the present invention has high transmittance to far ultraviolet light particularly having a wavelength of 220 nm or less and exhibits good dry etching resistance. Further, the positive photosensitive composition exhibits high sensitivity, good resolution and good pattern profile when far ultraviolet light having a wavelength of 250 nm or less, particularly 220 nm or less (especially an ArF excimer laser beam) is employed as an exposure light source, and thus it can be effectively employed for the formation of fine pattern necessary for the production of semiconductor elements.

公开(公告)号：US5981140A

公开(公告)日：1999-11-09

申请号：US932168

申请日：1997-09-17

申请人： Kenichiro Sato ,  Kunihiko Kodama ,  Kazuya Uenishi ,  Toshiaki Aoai

发明人： Kenichiro Sato ,  Kunihiko Kodama ,  Kazuya Uenishi ,  Toshiaki Aoai

IPC分类号： G03F7/00 ,  G03F7/004 ,  G03F7/039 ,  H01L21/027

CPC分类号： G03F7/0045 ,  Y10S430/115 ,  Y10S430/121 ,  Y10S430/122

摘要： A positive photosensitive composition comprising:a compound represented by formula (I) or (I') and a compound represented by formula (II) as compounds which generate a sulfonic acid upon irradiation with actinic rays or radiation: ##STR1## The substituents in these formulae are as defined in the specification. The positive photosensitive composition has high sensitivity and high resolving power, undergoes neither a decrease in resist pattern line width nor the formation of a T-top resist pattern surface with the lapse of time from exposure to heat treatment, and exhibits less profile deterioration such as residual standing wave and collapse.

摘要翻译： 一种正型光敏组合物，其包含：由式（I）或（I'）表示的化合物和由式（II）表示的化合物作为在光化射线或辐射照射时产生磺酸的化合物：这些式中的取代基为 在规范中定义。 正型感光性组合物具有高灵敏度和高分辨能力，经历曝光与热处理后的时间不会影响抗蚀剂图案线宽度的降低和T型抗蚀剂图形表面的形成，并且表现出较小的轮廓劣化，例如 残余驻波和崩溃。

公开(公告)号：US07122589B2

公开(公告)日：2006-10-17

申请号：US10669603

申请日：2003-09-25

申请人： Fumiyuki Nishiyama ,  Kenichiro Sato ,  Kunihiko Kodama

发明人： Fumiyuki Nishiyama ,  Kenichiro Sato ,  Kunihiko Kodama

IPC分类号： C08K5/36

CPC分类号： G03F7/0397 ,  C08K5/45 ,  G03F7/0045 ,  H01L21/312 ,  Y10S430/106 ,  Y10S430/122

摘要： A positive resist composition comprising: (A) a resin having alicyclic hydrocarbon groups in side chains, containing specified two types of repeating units, which increases the solubility in an alkali developing solution by the action of an acid; and (B) a particular sulfonium compound having a specified structure and capable of generating an acid upon irradiation with an actinic ray or radiation.

摘要翻译： 一种正型抗蚀剂组合物，其包含：（A）在侧链中具有脂环族烃基的树脂，其含有特定的两种重复单元，其通过酸的作用增加在碱性显影液中的溶解度; 和（B）具有特定结构并且能够在用光化射线或辐射照射时产生酸的特定锍化合物。

公开(公告)号：US06670095B2

公开(公告)日：2003-12-30

申请号：US10022363

申请日：2001-12-20

申请人： Kenichiro Sato ,  Kunihiko Kodama ,  Toshiaki Aoai

发明人： Kenichiro Sato ,  Kunihiko Kodama ,  Toshiaki Aoai

IPC分类号： G03F7004

CPC分类号： G03F7/039 ,  G03F7/0045 ,  Y10S430/106

摘要： The present invention provides a high sensitivity chemically amplified positive-working resist composition which eliminates edge roughness on pattern and provides an excellent resist pattern profile. A novel positive-working resist composition is provided comprising (A) a resin containing an alkali-soluble group protected by at least one of moieties containing alicyclic hydrocarbon represented by general formulae (pI) to (pVI) and having a monomer component content of 5% or less of the total pattern area as determined by gel permeation chromatography (GPC), which increases in its solution velocity with respect to an alkaline developer by the action of an acid and (B) a compound which is capable of generating an acid by irradiation with an active ray or radiation.

公开(公告)号：US5667932A

公开(公告)日：1997-09-16

申请号：US651849

申请日：1996-05-21

申请人： Kenichiro Sato ,  Kunihiko Kodama ,  Makoto Momota

发明人： Kenichiro Sato ,  Kunihiko Kodama ,  Makoto Momota

IPC分类号： G03F7/023 ,  G03F7/022 ,  H01L21/027

CPC分类号： G03F7/022

摘要： Disclosed is a positive photoresist composition comprising an alkali-soluble resin and 1,2-naphthoquinonediazide-5-(and/or -4-)sulfonic esters of a polyhydroxy compound having a particular structure consisting of 5 aromatic rings linked linearly, in which each of the aromatic rings contains a hydroxyl group and the respective aromatic rings next to both the terminal rings contains a substituent group at the 5-position to the hydroxyl group thereof. The positive photoresist composition which has high resolution, low dependence of the resolution on film thickness, and broad latitude of development, leaves little development residue, and has very excellent storage stability without separation of photosensitive materials and generation of microgel (no increase in particle) with a lapse of time.

摘要翻译： 公开了一种正型光致抗蚀剂组合物，其包含碱溶性树脂和具有由5个直链连接的芳环组成的特定结构的多羟基化合物的1,2-萘醌二叠氮化物-5-（和/或-4-）磺酸酯，其中每个 的芳环包含羟基，并且在两个末端环旁边的相应芳香环在其羟基的5位含有取代基。 具有高分辨率，低分辨率对膜厚度的依赖性低，开发宽阔的正光致抗蚀剂组合物几乎没有开发残留物，并且具有非常优异的储存稳定性，而不会分离感光材料和产生微凝胶（不增加颗粒） 随着时间的推移

公开(公告)号：US07351515B2

公开(公告)日：2008-04-01

申请号：US10941822

申请日：2004-09-16

申请人： Shoichiro Yasunami ,  Kenji Wada ,  Kunihiko Kodama ,  Kenichiro Sato

发明人： Shoichiro Yasunami ,  Kenji Wada ,  Kunihiko Kodama ,  Kenichiro Sato

IPC分类号： G03F7/039 ,  G03F7/20 ,  G03F7/30

CPC分类号： G03F7/0045 ,  G03F7/0046 ,  G03F7/0395 ,  G03F7/0397 ,  Y10S430/106 ,  Y10S430/111 ,  Y10S430/115 ,  Y10S430/122 ,  Y10S430/126

摘要： A positive resist composition includes: (A) a resin capable of increasing a solubility thereof in an alkali developer by an action of an acid; (B) a compound capable of generating a sulfonic acid represented by the following formula (I) upon irradiation with one of an actinic ray and a radiation; and (C1) at least one of an amine compound having at least an aliphatic hydroxyl group in a molecule and an amine compound having at least an ether bond in a molecule: A1A2-SO3H)n   (I) wherein A1 represents an n-valent linking group, A2 represents a single bond or a divalent aliphatic group, and A2's each may be the same or different, provided that at least one group represented by A1 or A2 contains a fluorine atom, and n represents an integer of from 2 to 4.

摘要翻译： 正型抗蚀剂组合物包括：（A）能够通过酸的作用增加其在碱性显影剂中的溶解度的树脂; （B）在用光化学射线和辐射之一照射时能够产生由下式（I）表示的磺酸的化合物; 和（C1）分子中至少具有脂肪族羟基的胺化合物和分子中具有至少一个醚键的胺化合物中的至少一种：＆lt;线内配方说明=“在线式” end =“lead”？> A _{1 A 2 3 （I）<？in-line-formula description =“In-line Formulas”end =“tail”？>其中A 1代表n价连接基团，A < SUB 2表示单键或二价脂族基团，并且A 2各自可以相同或不同，条件是至少一个由A 1表示的基团 或A 2 含有氟原子，n表示2〜4的整数。}

公开(公告)号：US06699635B1

公开(公告)日：2004-03-02

申请号：US09471007

申请日：1999-12-23

申请人： Kunihiko Kodama ,  Kenichiro Sato ,  Toshiaki Aoai ,  Yasumasa Kawabe

发明人： Kunihiko Kodama ,  Kenichiro Sato ,  Toshiaki Aoai ,  Yasumasa Kawabe

IPC分类号： G03F7004

CPC分类号： G03F7/0048 ,  G03F7/0397 ,  Y10S430/106

摘要： A positive photosensitive composition suitable for resist pattern formation under exposure to far ultraviolet light of wavelengths of 250 nm or shorter, particularly 220 nm or shorther, comprising: (A) a resin comprising constitutional repeating units wherein particular ring structures are present and having groups capable of decomposing under the action of an acid to cause an increase of the solubility in an alkali developer, (B) a photo-acid generator capable of generating an acid upon irradiation with actinic rays or radiation, and (C) a fluorine-containing surfactant, a silicon-containing surfactant or a mixture thereof.

摘要翻译： 适合于在暴露于波长为250nm或更短，特别是220nm或更短的远紫外光下的抗蚀剂图案形成的正性感光性组合物，其包含：（A）包含结构重复单元的树脂，其中存在特定的环结构并具有基团 在酸的作用下分解，导致碱显影剂溶解度的增加，（B）能够在用光化学射线或辐射照射时产生酸的光酸发生剂，（C）含氟表面活性剂 ，含硅表面活性剂或其混合物。

公开(公告)号：US06479211B1

公开(公告)日：2002-11-12

申请号：US09577884

申请日：2000-05-25

申请人： Kenichiro Sato ,  Kunihiko Kodama ,  Toshiaki Aoai ,  Hajime Nakao

发明人： Kenichiro Sato ,  Kunihiko Kodama ,  Toshiaki Aoai ,  Hajime Nakao

IPC分类号： G03F7039

CPC分类号： G03F7/0397 ,  G03F7/0048 ,  Y10S430/106

摘要： A positive photoresist composition for far ultraviolet exposure is disclosed, comprising a compound capable of generating an acid upon irradiation with actinic rays or radiation and a resin having a repeating unit represented by formula (I) and being capable of decomposing under the action of an acid to increase the solubility in alkali. The positive photoresist composition of the present invention may further comprise a fluorine-containing and/or silicon-containing surfactant, an acid decomposable resin, a compound capable of decomposing under the action of an acid to generate a sulfonic acid, and/or a specific solvent, according to the objects.

摘要翻译： 公开了一种用于远紫外线曝光的正性光致抗蚀剂组合物，其包含能够在光化射线或辐射照射时能够产生酸的化合物和具有由式（I）表示的重复单元并且能够在酸的作用下分解的树脂 以增加在碱中的溶解度。 本发明的正型光致抗蚀剂组合物可以进一步包含含氟和/或含硅表面活性剂，可酸分解树脂，能够在酸的作用下分解以产生磺酸的化合物和/或特定的 溶剂，根据目的。