Positive resist composition and pattern-forming method
    1.
    发明授权
    Positive resist composition and pattern-forming method 有权
    正抗蚀剂组成和图案形成方法

    公开(公告)号:US07998654B2

    公开(公告)日:2011-08-16

    申请号:US12056330

    申请日:2008-03-27

    IPC分类号: G03F7/004 G03F7/30

    摘要: A positive resist composition comprises: (A) a resin that has a repeating unit represented by general formula (a1) and increases its solubility in an alkali developer by action of an acid; (B) a compound which generates an acid upon irradiation with an actinic ray or a radiation; and (C) a resin that has at least one of a fluorine atom and a silicon atom and has a group selected from the group consisting of (x), (y) and (z); and (D) a solvent: (x) an alkali-soluble group; (y) a group capable that decomposes by action of an alkali developer to undergo an increase in a solubility of the resin (C) in an alkali developer; and (z) a group that decomposes by action of an acid, wherein R represents a hydrogen atom or a methyl group, Rxa represents an alkyl group or a cycloalkyl group, and n represents an integer of 1 to 8.

    摘要翻译: 正型抗蚀剂组合物包含:(A)具有由通式(a1)表示的重复单元并通过酸的作用增加其在碱性显影剂中的溶解度的树脂; (B)在用光化射线或辐射照射时产生酸的化合物; 和(C)具有氟原子和硅原子中的至少一个并且具有选自(x),(y)和(z)的基团的树脂; 和(D)溶剂:(x)碱溶性基团; (y)能够通过碱性显影剂的作用分解以使树脂(C)在碱性显影剂中的溶解度增加的基团; 和(z)通过酸的作用分解的基团,其中R表示氢原子或甲基,Rxa表示烷基或环烷基,n表示1至8的整数。

    POSITIVE PHOTOSENSITIVE COMPOSITION AND PATTERN FORMING METHOD USING THE SAME
    2.
    发明申请
    POSITIVE PHOTOSENSITIVE COMPOSITION AND PATTERN FORMING METHOD USING THE SAME 有权
    正极光敏组合物和使用其的图案形成方法

    公开(公告)号:US20110104610A1

    公开(公告)日:2011-05-05

    申请号:US12915710

    申请日:2010-10-29

    IPC分类号: G03F7/004 G03F7/20

    摘要: A positive photosensitive composition comprising: (A) a compound capable of generating an acid upon irradiation with actinic rays or radiation; (B1) a resin of which solubility in an alkali developer increases under an action of an acid; and (B2) a resin that has at least one group selected from (a) an alkali-soluble group and (b) a group capable of decomposing under an action of an alkali to produce an alkali-soluble group, and the resin (B2) does not have a group capable of decomposing under an action of an acid; and a pattern forming method using the same.

    摘要翻译: 一种正型感光性组合物,其包含:(A)在用光化射线或辐射照射时能够产生酸的化合物; (B1)在碱性显影剂中的溶解度在酸的作用下增加的树脂; 和(B2)具有选自(a)碱溶性基团和(b)能够在碱的作用下分解以产生碱溶性基团的基团中的至少一种的树脂,并且树脂(B2 )没有能够在酸的作用下分解的基团; 以及使用该图案形成方法的图案形成方法。

    RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME
    3.
    发明申请
    RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME 审中-公开
    使用它的耐蚀组合物和图案形成方法

    公开(公告)号:US20080081292A1

    公开(公告)日:2008-04-03

    申请号:US11863314

    申请日:2007-09-28

    IPC分类号: G03C1/00 G03C5/00

    摘要: A resist composition comprises: (A) a resin containing a repeating unit represented by formula (I); and (B) at least one compound represented by formula (II) or (II′): wherein AR represents a substituted or unsubstituted benzene ring or a substituted or unsubstituted naphthalene ring; Rn represents a substituted or unsubstituted alkyl group, a substituted or unsubstituted cycloalkyl group or a substituted or unsubstituted aryl group; and A represents a hydrogen atom, a substituted or unsubstituted alkyl group, a substituted or unsubstituted cycloalkyl group, a halogen atom, a cyano group or a substituted or unsubstituted alkyloxycarbonyl group: wherein Rfa and Rfb each independently represents a monovalent organic group having a fluorine atom, and two Rfa's or three Rfb's may be the same or different and may combine with each other to form a ring; and X+ represents a sulfonium cation or an iodonium cation, and a pattern forming method uses the same.

    摘要翻译: 抗蚀剂组合物包含:(A)含有由式(I)表示的重复单元的树脂; 和(B)至少一种由式(II)或(II')表示的化合物:其中AR表示取代或未取代的苯环或取代或未取代的萘环; Rn表示取代或未取代的烷基,取代或未取代的环烷基或取代或未取代的芳基; A表示氢原子,取代或未取代的烷基,取代或未取代的环烷基,卤素原子,氰基或取代或未取代的烷氧基羰基:其中Rfa和Rfb各自独立地表示具有氟原子的一价有机基团 原子和两个Rfa或三个Rfb可以相同或不同,并且可以彼此结合形成环; 和X + +表示锍阳离子或碘鎓阳离子,并且图案形成方法使用它们。

    Positive-working photosensitive composition and pattern forming method using the same
    4.
    发明申请
    Positive-working photosensitive composition and pattern forming method using the same 有权
    正性感光性组合物和使用其的图案形成方法

    公开(公告)号:US20070087288A1

    公开(公告)日:2007-04-19

    申请号:US11581407

    申请日:2006-10-17

    IPC分类号: G03C1/00

    摘要: A positive-working photosensitive composition that includes (A) a resin containing repeating units having diamantane structures and capable of decomposing under action of an acid to increase solubility in an alkali developer, (B) a compound capable of generating a specific organic acid upon irradiation with an actinic ray or radiation, and (C) a solvent.

    摘要翻译: 一种正性感光性组合物,其包含(A)含有具有双金刚烷结构的重复单元并能够在酸的作用下分解以提高在碱性显影剂中的溶解度的树脂的树脂,(B)在照射时能够产生特定有机酸的化合物 具有光化射线或辐射,和(C)溶剂。

    Positive photoresist composition
    7.
    发明授权
    Positive photoresist composition 有权
    正光致抗蚀剂组合物

    公开(公告)号:US06692883B2

    公开(公告)日:2004-02-17

    申请号:US09838257

    申请日:2001-04-20

    IPC分类号: G03F7004

    摘要: A positive photoresist composition is disclosed, comprising a resin having a structural unit containing a specific group and capable of decomposing under the action of an acid to increase the solubility in an alkali developer, a resin having a structural unit containing a specific group and capable of decomposing under the action of an acid to increase the solubility in an alkali developer, and a compound capable of generating an acid upon irradiation with actinic rays or radiation.

    摘要翻译: 公开了一种正型光致抗蚀剂组合物,其包含具有包含特定基团的结构单元并且能够在酸的作用下分解以增加在碱性显影剂中的溶解度的树脂,具有包含特定基团的结构单元的树脂,并且能够 在酸的作用下分解以增加在碱性显影剂中的溶解度,以及能够在用光化射线或辐射照射时能够产生酸的化合物。

    Positive photoresist composition
    8.
    发明授权
    Positive photoresist composition 有权
    正光致抗蚀剂组合物

    公开(公告)号:US06376152B2

    公开(公告)日:2002-04-23

    申请号:US09775620

    申请日:2001-02-05

    IPC分类号: G03F7004

    摘要: A positive photoresist composition comprises (A) a compound which generates an acid upon irradiation with an actinic ray or radiation, (B) a resin which is insoluble or sparingly soluble in alkali but becomes soluble in alkali by the action of an acid, and (C) a nitrogen-containing compound containing at least one partial structure represented by formula (I) shown below in its molecule: The positive photoresist composition of the present invention is suitable for exposure to a far ultraviolet ray, particularly a KrF excimer laser beam, improved in line edge roughness and also excellent in sensitivity, resolution, depth of focus and resist profile.

    摘要翻译: 正型光致抗蚀剂组合物包含(A)在用光化学射线或辐射照射时产生酸的化合物,(B)不溶于或微溶于碱但通过酸作用而溶于碱的树脂和( C)在其分子中含有至少一种由式(I)表示的部分结构的含氮化合物:本发明的正性光致抗蚀剂组合物适用于暴露于远紫外线,特别是KrF准分子激光束, 线边缘粗糙度提高,灵敏度,分辨率,聚焦深度和抗蚀剂轮廓优异。

    POSITIVE RESIST COMPOSITION AND PATTERN-FORMING METHOD
    10.
    发明申请
    POSITIVE RESIST COMPOSITION AND PATTERN-FORMING METHOD 有权
    积极抵抗组成和形成方法

    公开(公告)号:US20110305991A1

    公开(公告)日:2011-12-15

    申请号:US13173210

    申请日:2011-06-30

    IPC分类号: G03F7/20 G03F7/039

    摘要: A positive resist composition comprises: (A) a resin that has a repeating unit represented by general formula (a1) and increases its solubility in an alkali developer by action of an acid; (B) a compound which generates an acid upon irradiation with an actinic ray or a radiation; and (C) a resin that has at least one of a fluorine atom and a silicon atom and has a group selected from the group consisting of (x), (y) and (z); and (D) a solvent: (x) an alkali-soluble group; (y) a group capable that decomposes by action of an alkali developer to undergo an increase in a solubility of the resin (C) in an alkali developer; and (z) a group that decomposes by action of an acid, wherein R represents a hydrogen atom or a methyl group, Rxa represents an alkyl group or a cycloalkyl group, and n represents an integer of 1 to 8.

    摘要翻译: 正型抗蚀剂组合物包含:(A)具有由通式(a1)表示的重复单元并通过酸的作用增加其在碱性显影剂中的溶解度的树脂; (B)在用光化射线或辐射照射时产生酸的化合物; 和(C)具有氟原子和硅原子中的至少一个并且具有选自(x),(y)和(z)的基团的树脂; 和(D)溶剂:(x)碱溶性基团; (y)能够通过碱性显影剂的作用分解以使树脂(C)在碱性显影剂中的溶解度增加的基团; 和(z)通过酸的作用分解的基团,其中R表示氢原子或甲基,Rxa表示烷基或环烷基,n表示1至8的整数。