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    Method for forming fine resist pattern
    6.
    发明申请
    Method for forming fine resist pattern 审中-公开
    形成精细抗蚀剂图案的方法

    公开(公告)号：US20050037291A1

    公开(公告)日：2005-02-17

    申请号：US10497016

    申请日：2002-12-02

    申请人： Kazuyuki Nitta ,  Satoshi Shimatani ,  Masahiro Masujima

    发明人： Kazuyuki Nitta ,  Satoshi Shimatani ,  Masahiro Masujima

    IPC分类号： G03F7/004 ,  G03F7/027 ,  G03F7/039 ,  G03F7/40 ,  H01L21/027

    CPC分类号： G03F7/0392 ,  G03F7/0045 ,  G03F7/027 ,  G03F7/40 ,  H01L21/0273

    摘要： The object is to form a resist pattern to be applicable to a thermal flow process with a small changing amount of the resist pattern size per unit temperature, high uniformity within the plane of the resist hole pattern size obtained and an excellent cross sectional profile. In a resist pattern forming method by subjecting a patterned positive-working resist film provided on a substrate to a thermal flow treatment to effect size reduction, it is characterized in (a) that, as the positive-working resist composition to be used, a positive-working resist composition is used which comprises (A) a resinous ingredient capable of being imparted with increased solubility in alkali by an acid, (B) a compound generating an acid by irradiation with a radiation, (C) a compound having at least two vinyl ether groups per molecule to form crosslinks by reacting with the resinous ingredient (A) under heating and (D) an organic amine compound and (b) that the aforemen-tioned thermal flow treatment is conducted by twice or more of heatings within a temperature range of 100-200° C. wherein the temperature of subsequent heating is not lower than the temperature in the preceding heating.

    摘要翻译： 本发明的目的是形成抗蚀剂图案，以适用于每单位温度下抗蚀剂图案尺寸的变化量小，在获得的抗蚀孔图案尺寸的平面内的高均匀性和优异的横截面轮廓的热流程。 在通过对设置在基板上的图案化正性抗蚀剂膜进行热流动处理以实现尺寸减小的抗蚀剂图案形成方法中，其特征在于：（a）作为所使用的正性抗蚀剂组合物， 使用正性抗蚀剂组合物，其包含（A）能够通过酸赋予在碱中增加的溶解度的树脂成分，（B）通过辐射照射产生酸的化合物，（C）至少具有 每个分子两个乙烯基醚基团，通过在加热下与树脂成分（A）反应形成交联，和（D）有机胺化合物和（b）上述热流动处理是通过两次或更多次加热在 温度范围为100-200℃，其中随后加热的温度不低于先前加热中的温度。

    POSITIVE RESIST COMPOSITION FOR FORMING THICK-FILM RESIST, THICK-FILM RESIST LAMINATE, AND METHOD OF FORMING RESIST PATTERN
    7.
    发明申请
    POSITIVE RESIST COMPOSITION FOR FORMING THICK-FILM RESIST, THICK-FILM RESIST LAMINATE, AND METHOD OF FORMING RESIST PATTERN 有权
    用于形成薄膜电阻的抗静电组合物，薄膜层压材料和形成电阻图案的方法

    公开(公告)号：US20090023102A1

    公开(公告)日：2009-01-22

    申请号：US12162775

    申请日：2007-01-31

    申请人： Hiroshi Shimbori ,  Masahiro Masujima ,  Toshihiro Yamaguchi ,  Sachiko Yoshizawa

    发明人： Hiroshi Shimbori ,  Masahiro Masujima ,  Toshihiro Yamaguchi ,  Sachiko Yoshizawa

    IPC分类号： G03F7/20 ,  G03C1/73

    CPC分类号： G03F7/0392 ,  G03F7/0045 ,  G03F7/0046 ,  G11B5/3163 ,  Y10S430/122 ,  Y10S430/126 ,  Y10T428/265

    摘要： A positive resist composition for forming a thick-film resist having a film thickness of 1 to 15 μm, the composition comprising: a resin component (A) that includes a polymer compound (A1), which has a weight average molecular weight of 20,000 to 50,000, and includes a structural unit (a1) derived from a hydroxystyrene and a structural unit (a2) derived from an acrylate ester containing an acid dissociable, dissolution inhibiting group, an acid generator component (B) that generates acid upon exposure and includes an onium salt-based acid generator having an anion moiety represented by general formula (I): R4″SO3− (wherein, R4″ represents a linear or branched alkyl group or fluoroalkyl group of 4 carbon atoms), and a nitrogen-containing organic compound (D) that includes a tertiary aliphatic amine.

    摘要翻译： 一种用于形成膜厚为1-15μm的厚膜抗蚀剂的正性抗蚀剂组合物，该组合物包括：包含高分子化合物（A1）的树脂组分（A），其重均分子量为20,000至 50,000，并且包括衍生自羟基苯乙烯的结构单元（a1）和衍生自含有酸解离性，溶解抑制基团的丙烯酸酯的结构单元（a2），在曝光时产生酸的酸产生剂组分（B），并且包含 具有由通式（I）表示的阴离子部分的鎓盐类酸发生剂：R4''SO3-（其中，R4“表示4个碳原子的直链或支链烷基或氟代烷基）和含氮 有机化合物（D），其包含叔脂族胺。

    Positive resist composition for forming thick-film resist, thick-film resist laminate, and method of forming resist pattern
    8.
    发明授权
    Positive resist composition for forming thick-film resist, thick-film resist laminate, and method of forming resist pattern 有权
    用于形成厚膜抗蚀剂的正性抗蚀剂组合物，厚膜抗蚀剂层压体以及形成抗蚀剂图案的方法

    公开(公告)号：US08133653B2

    公开(公告)日：2012-03-13

    申请号：US12162775

    申请日：2007-01-31

    申请人： Hiroshi Shimbori ,  Masahiro Masujima ,  Toshihiro Yamaguchi ,  Sachiko Yoshizawa

    发明人： Hiroshi Shimbori ,  Masahiro Masujima ,  Toshihiro Yamaguchi ,  Sachiko Yoshizawa

    IPC分类号： G03F7/028 ,  G03F7/039 ,  G03F7/26

    CPC分类号： G03F7/0392 ,  G03F7/0045 ,  G03F7/0046 ,  G11B5/3163 ,  Y10S430/122 ,  Y10S430/126 ,  Y10T428/265

    摘要： A positive resist composition for forming a thick-film resist having a film thickness of 1 to 15 μm, the composition comprising: a resin component (A) that includes a polymer compound (A1), which has a weight average molecular weight of 20,000 to 50,000, and includes a structural unit (a1) derived from a hydroxystyrene and a structural unit (a2) derived from an acrylate ester containing an acid dissociable, dissolution inhibiting group, an acid generator component (B) that generates acid upon exposure and includes an onium salt-based acid generator having an anion moiety represented by general formula (I): R4″SO3− (wherein, R4″ represents a linear or branched alkyl group or fluoroalkyl group of 4 carbon atoms), and a nitrogen-containing organic compound (D) that includes a tertiary aliphatic amine.

    摘要翻译： 一种用于形成膜厚度为1〜15μm的厚膜抗蚀剂的正性抗蚀剂组合物，其组成包括：包含高分子化合物（A1）的树脂组分（A），其重均分子量为20,000至 50,000，并且包括衍生自羟基苯乙烯的结构单元（a1）和衍生自含有酸解离性，溶解抑制基团的丙烯酸酯的结构单元（a2），在曝光时产生酸的酸产生剂组分（B），并且包含 具有由通式（I）表示的阴离子部分的鎓盐类酸发生剂：R4“SO3-（其中R4表示4个碳原子的直链或支链烷基或氟烷基）和含氮有机化合物 （D），其包括叔脂族胺。

    Anti-reflection film forming material, and method for forming resist pattern using the same
    9.
    发明授权
    Anti-reflection film forming material, and method for forming resist pattern using the same 有权
    防反射膜形成材料，以及使用其形成抗蚀剂图案的方法

    公开(公告)号：US08216775B2

    公开(公告)日：2012-07-10

    申请号：US12385195

    申请日：2009-04-01

    申请人： Yuriko Shirai ,  Takako Hirosaki ,  Masahiro Masujima ,  Atsushi Sawano ,  Jun Koshiyama

    发明人： Yuriko Shirai ,  Takako Hirosaki ,  Masahiro Masujima ,  Atsushi Sawano ,  Jun Koshiyama

    IPC分类号： H01L21/027 ,  G03F7/11 ,  G03F7/30

    CPC分类号： C09D139/06 ,  C08K5/17 ,  C08K5/175 ,  C08K5/19 ,  G03F7/091 ,  Y10S438/952

    摘要： The anti-reflection film forming material according to the present invention includes (a) a water soluble resin having a vinyl acetate constituent unit, and (b) a compound having a constituent unit represented by the following general formula. Wherein, R1 and R2 represent a direct bond or a methylene chain; R3 and R4 represent a hydrogen atom, an alkyl group having 1 to 10 carbon atoms, or a group represented by —(CH2)n—O—R5—R6; and at least one of R3 and R4 is a group represented by —(CH2)n—O—R5—R6, wherein: R5 represents a direct bond or an alkylene chain having 1 to 10 carbon atoms which may be interrupted with —O—; R6 represents an alkyl group having 1 to 10 carbon atoms in which a portion or all hydrogen atoms are substituted with a fluorine atom; and n represents an integer of 0 to 10. Wherein, the total number of carbon atoms present in R1 and R2 is 1 or 2.

    摘要翻译： 根据本发明的抗反射成膜材料包括（a）具有乙酸乙烯酯构成单元的水溶性树脂，和（b）具有由以下通式表示的构成单元的化合物。 其中R1和R2表示直接键或亚甲基链; R3和R4表示氢原子，具有1-10个碳原子的烷基或由 - （CH2）n-O-R5-R6表示的基团; 并且R 3和R 4中的至少一个是由 - （CH 2）n -O-R 5 -R 6表示的基团，其中：R 5表示直接键或具有1〜10个碳原子的亚烷基，其可以被-O- ; R6表示一部分或全部氢原子被氟原子取代的碳原子数1〜10的烷基， n表示0〜10的整数。其中R1和R2中存在的碳原子总数为1或2。

    Anti-reflection film forming material, and method for forming resist pattern using the same
    10.
    发明申请
    Anti-reflection film forming material, and method for forming resist pattern using the same 有权
    防反射膜形成材料，以及使用其形成抗蚀剂图案的方法

    公开(公告)号：US20090253077A1

    公开(公告)日：2009-10-08

    申请号：US12385195

    申请日：2009-04-01

    申请人： Yuriko Shirai ,  Takako Hirosaki ,  Masahiro Masujima ,  Atsushi Sawano ,  Jun Koshiyama

    发明人： Yuriko Shirai ,  Takako Hirosaki ,  Masahiro Masujima ,  Atsushi Sawano ,  Jun Koshiyama

    IPC分类号： G03F7/20 ,  C08F20/04 ,  C08L39/06 ,  C08L33/02 ,  C08K5/16 ,  C08K3/28

    CPC分类号： C09D139/06 ,  C08K5/17 ,  C08K5/175 ,  C08K5/19 ,  G03F7/091 ,  Y10S438/952

    摘要： The anti-reflection film forming material according to the present invention includes (a) a water soluble resin having a vinyl acetate constituent unit, and (b) a compound having a constituent unit represented by the following general formula. Wherein, R1 and R2 represent a direct bond or a methylene chain; R3 and R4 represent a hydrogen atom, an alkyl group having 1 to 10 carbon atoms, or a group represented by —(CH2)n—O—R5—R6; and at least one of R3 and R4 is a group represented by —(CH2)n—O—R5—R6, wherein: R5 represents a direct bond or an alkylene chain having 1 to 10 carbon atoms which may be interrupted with —O—; R6 represents an alkyl group having 1 to 10 carbon atoms in which a portion or all hydrogen atoms are substituted with a fluorine atom; and n represents an integer of 0 to 10. Wherein, the total number of carbon atoms present in R1 and R2 is 1 or 2.

    摘要翻译： 根据本发明的抗反射成膜材料包括（a）具有乙酸乙烯酯构成单元的水溶性树脂，和（b）具有由以下通式表示的构成单元的化合物。 其中R1和R2表示直接键或亚甲基链; R3和R4表示氢原子，具有1-10个碳原子的烷基或由 - （CH2）n-O-R5-R6表示的基团; 并且R 3和R 4中的至少一个是由 - （CH 2）n -O-R 5 -R 6表示的基团，其中：R 5表示直接键或可以被-O-间隔的具有1至10个碳原子的亚烷基链; R6表示一部分或全部氢原子被氟原子取代的碳原子数1〜10的烷基， n表示0〜10的整数。其中R1和R2中存在的碳原子总数为1或2。