公开(公告)号：US07327071B2

公开(公告)日：2008-02-05

申请号：US11469505

申请日：2006-09-01

申请人： Kenji Nishiyama ,  Eiichi Takata ,  Takeshi Nakao ,  Michio Kadota

发明人： Kenji Nishiyama ,  Eiichi Takata ,  Takeshi Nakao ,  Michio Kadota

IPC分类号： H01L41/08

CPC分类号： H03H3/08 ,  H03H9/02984 ,  H03H9/14538 ,  H03H9/25

摘要： A surface acoustic wave device includes a piezoelectric substrate made of LiTaO3 or LiNbO3 having an electromechanical coefficient of about 15% or more, at least one electrode which is disposed on the piezoelectric substrate and which is a laminate film having a metal layer defining a primary metal layer primarily composed of a metal having a density higher than that of Al or an alloy of the metal and a metal layer which is laminated on the primary metal layer and which is composed of another metal, and a first SiO2 layer which is disposed in a remaining area other than that at which the at least one electrode is located and which has a thickness approximately equivalent to that of the electrode. In the surface acoustic wave device described above, the density of the electrode is at least about 1.5 times that of the first SiO2 layer. In addition, a second SiO2 layer disposed so as to cover the electrode and the first SiO2 layer and a silicon nitride compound layer disposed on the second SiO2 layer are further provided.

摘要翻译： 表面声波装置包括由机电系数为约15％以上的由LiT 3 O 3或LiNbO 3 3制成的压电基板，至少一个电极设置在 压电基板，其是具有金属层的层压膜，该金属层限定主要由密度高于Al的金属或金属和金属层的合金的主金属层构成的金属层，所述金属层与层叠在所述主金属层上的金属层的合金， 由另一种金属和第一SiO 2层构成，第一SiO 2层设置在除了至少一个电极所位于的其余区域之外的其余区域中，并且具有与电极的厚度大致相等的厚度 。 在上述表面声波装置中，电极的密度为第一SiO 2层的密度的至少约1.5倍。 此外，设置成覆盖电极和第一SiO 2层的第二SiO 2层和设置在第二SiO 2层上的氮化硅化合物层 进一步提供层。

公开(公告)号：US07804221B2

公开(公告)日：2010-09-28

申请号：US12332394

申请日：2008-12-11

申请人： Kenji Nishiyama ,  Takeshi Nakao ,  Michio Kadota

发明人： Kenji Nishiyama ,  Takeshi Nakao ,  Michio Kadota

IPC分类号： H01L41/08

CPC分类号： H03H9/02559 ,  H03H9/02834 ,  H03H9/14538

摘要： A surface acoustic wave device has high power withstanding performance and is able to effectively suppress an undesirable spurious response. The surface acoustic wave device includes an LiNbO3 substrate having Euler angles (0°±5°, θ±5°, 0°±10°), an electrode that is disposed on the LiNbO3 substrate and that has an IDT electrode made mainly from Cu, a first silicon oxide film that is disposed in an area other than an area in which the electrode is disposed to have a thickness equal to that of the electrode, and a second silicon oxide film that is disposed so as to cover the electrode and the first silicon oxide film, wherein the surface acoustic wave device utilizes an SH wave, wherein a duty D of the IDT electrode is less than or equal to about 0.49, and θ of the Euler angles (0°±5°, θ±5°, 0°±10°) is set to fall within a range that satisfies the following inequality: −10×D+92.5−100×C≦θ≦37.5×D2−57.75×D+104.075+5710×C2−1105.7×C+45.729 D: duty C: thickness of the IDT electrode normalized using a wavelength λ.

摘要翻译： 表面声波器件具有高功率耐受性能，并且能够有效地抑制不期望的杂散响应。 表面声波装置包括具有欧拉角（0°±5°，±5°，0°±10°）的LiNbO 3基板，设置在LiNbO 3基板上并具有主要由 Cu，第一氧化硅膜，其设置在除了电极设置的区域以外的区域中，其厚度等于电极的厚度;以及第二氧化硅膜，其被设置为覆盖电极和 所述第一氧化硅膜，其中所述表面声波器件利用SH波，其中所述IDT电极的占空比D小于或等于约0.49， 的欧拉角（0°±5°，θ= 5°，0°±10°）被设定在满足以下不等式的范围内：-10×D + 92.5-100×C＆nlE;＆Thetas;＆nlE ; 37.5×D2-57.75×D + 104.075 + 5710×C2-1105.7×C + 45.729 D：占空比C：使用波长λ归一化的IDT电极的厚度。

公开(公告)号：US20090072659A1

公开(公告)日：2009-03-19

申请号：US12326235

申请日：2008-12-02

申请人： Kenji Nishiyama ,  Takeshi Nakao ,  Michio Kadota

发明人： Kenji Nishiyama ,  Takeshi Nakao ,  Michio Kadota

IPC分类号： H03H9/25 ,  H03H9/72 ,  H01L41/04

CPC分类号： H03H9/02559

摘要： A surface acoustic wave device has a duty that is greater than about 0.5, attenuation outside the pass band is increased, and an undesirable spurious response is effectively suppressed. The surface acoustic wave device includes an LiNbO3 substrate having Euler angles (0°±5°, θ±5°, 0°±10°), an electrode that is provided on the LiNbO3 substrate and that includes an IDT electrode primarily made of Cu, a first silicon oxide film that is provided in an area other than an area in which the electrode is arranged so as to have a thickness substantially equal to that of the electrode, and a second silicon oxide film that is arranged so as to cover the electrode and the first silicon oxide film, wherein the surface acoustic wave device utilizes an SH wave, wherein a duty D of the IDT electrode 3 is at least about 0.52, and θ of the Euler angles (0°±5, θ+5°, 0°±10°) is set so as to fall within a range that satisfies the following Inequality (1A) or (1B): (1) When 0.52≦D≦0.6, −10×D+92.5−100×C≦θ≦37.5×D2−57.75×D+104.075+5710×C2−1105.7×C+45.729  Inequality (1A) (2) When D>0.6, 86.5−100×C≦θ≦37.5×D2−57.75×D+104.075+5710×C2−1105.7λC+45.729  Inequality (1B) where D is a duty, and C is a thickness of the IDT.

摘要翻译： 表面声波器件的占空比大于约0.5，通带外的衰减增加，并且有效地抑制了不期望的寄生响应。 表面声波装置包括具有欧拉角（0°±5°，θ±5°，0°±10°）的LiNbO 3基板，设置在LiNbO 3基板上并且包括主要由Cu制成的IDT电极的电极 设置在与电极配置的区域以外的区域中的第一氧化硅膜，其厚度基本上等于电极的厚度;以及第二氧化硅膜，其被设置成覆盖 电极和第一氧化硅膜，其中表面声波装置利用SH波，其中IDT电极3的占空比D至少为约0.52，欧拉角（0°±5°，θ+ 5°） ，0°±10°）设定为满足以下不等式（1A）或（1B）的范围：<？在线公式描述=“在线公式”end =“lead”？ >（1）当0.52 <= D <= 0.6时，-10×D + 92.5-100×C <=θ<= 37.5×D 2 -57.75×D + 104.075 + 57×10×C 2 -1〜105.7×C + 45.729不等式（1A） n =“在线公式”end =“tail”？> <？in-line-formula description =“In-line Formulas”end =“lead”？>（2）当D> 0.6时，86.5-100xC <= θ<= 37.5×D2-57.75xD + 104.075 + 5710×C2-1.77.7λC+ 45.729不等式（1B）<？在线公式描述=“在线公式”end =“tail”？>其中D是任务， C是IDT的厚度。

公开(公告)号：US07701113B2

公开(公告)日：2010-04-20

申请号：US12191451

申请日：2008-08-14

申请人： Shunsuke Kido ,  Takeshi Nakao ,  Yasuharu Nakai ,  Kenji Nishiyama ,  Michio Kadota

发明人： Shunsuke Kido ,  Takeshi Nakao ,  Yasuharu Nakai ,  Kenji Nishiyama ,  Michio Kadota

IPC分类号： H03H9/25

CPC分类号： H03H9/02834 ,  H03H3/10 ,  Y10T29/42 ,  Y10T29/49005 ,  Y10T29/49155 ,  Y10T29/49165

摘要： A surface acoustic wave device includes a piezoelectric substrate, at least one interdigital transducer (IDT) electrode provided on the piezoelectric substrate, and an insulator layer to improve a temperature characteristic arranged so as to cover the IDT electrode. When a surface of the insulator layer is classified into a first surface region under which the IDT electrode is positioned and a second surface region under which no IDT electrode is positioned, the surface of the insulator layer in at least one portion of the second surface region is higher than the surface of the insulator layer from the piezoelectric substrate in at least one portion of the first surface region by at least about 0.001λ, where the wavelength of an acoustic wave is λ.

摘要翻译： 表面声波装置包括压电基板，设置在压电基板上的至少一个叉指式换能器（IDT）电极和用于改善覆盖IDT电极的温度特性的绝缘体层。 当将绝缘体层的表面划分为IDT电极所在的第一表面区域和没有IDT电极的第二表面区域时，在第二表面区域的至少一部分中的绝缘体层的表面 在距离第一表面区域的至少一部分中的压电衬底的绝缘体层的表面高至少约0.001λ，其中声波的波长为λ。

公开(公告)号：US07569972B2

公开(公告)日：2009-08-04

申请号：US12234836

申请日：2008-09-22

申请人： Kenji Nishiyama ,  Takeshi Nakao ,  Michio Kadota

发明人： Kenji Nishiyama ,  Takeshi Nakao ,  Michio Kadota

IPC分类号： H01L41/08

CPC分类号： H03H9/02559

摘要： A surface acoustic wave device utilizing a Rayleigh wave includes a LiNbO3 substrate having Euler angles of (0°±5°, θ±5°, 0°±10°), an electrode which is disposed on the LiNbO3 substrate and which includes an IDT electrode primarily including Au, a first silicon oxide film disposed in a region other than the region in which the above-described electrode is disposed, the first silicon oxide film having a film thickness substantially equal to the thickness of the above-described electrode, and a second silicon oxide film arranged to cover the electrode and the first silicon oxide film, wherein the film thickness of the electrode is in the range of about 0.062λ to about 0.14λ, where λ represents the wavelength of a surface acoustic wave, and θ of the above-described Euler angles of (0°±5°, θ±5°, 0°±10°) is in the range satisfying the following Formula (1): θ=31.72−206.92×exp(−1×TAu/0.0138)  Formula (1) where TAu is a value of Au electrode film thickness normalized with the wavelength λ.

摘要翻译： 利用瑞利波的表面声波装置包括具有欧拉角（0°±5°，θ±5°，0°±10°）的LiNbO 3基板，设置在LiNbO 3基板上的电极，其包括IDT 主要包括Au的电极，设置在除了上述电极的区域以外的区域中的第一氧化硅膜，第一氧化硅膜的膜厚度基本上等于上述电极的厚度，以及 布置成覆盖电极和第一氧化硅膜的第二氧化硅膜，其中电极的膜厚度在约0.062λ至约0.14λ的范围内，其中λ表示声表面波的波长，θ表示 （0°±5°，θ±5°，0°±10°）的上述欧拉角在满足下列公式（1）的范围内：<？在线公式描述=“In- 线公式“end =”lead“？> theta = 31.72-206.92xexp（-1×TAu / 0.0138）式（1）<？in-line-formula description =“In-line Formulas”end =“tail”？>其中TAu是用波长λ标准化的Au电极膜厚度的值。

公开(公告)号：US07418772B2

公开(公告)日：2008-09-02

申请号：US11743793

申请日：2007-05-03

申请人： Kenji Nishiyama ,  Takeshi Nakao ,  Michio Kadota

发明人： Kenji Nishiyama ,  Takeshi Nakao ,  Michio Kadota

IPC分类号： H01L41/22 ,  H01L41/00

CPC分类号： H03H9/02929 ,  H03H3/10 ,  H03H9/02559 ,  H03H9/14538 ,  Y10T29/42 ,  Y10T29/49016 ,  Y10T29/4913 ,  Y10T29/49135 ,  Y10T29/49155

摘要： In a manufacturing method for a SAW apparatus a first insulating layer is formed on the entire surface of a piezoelectric LiTaO3 substrate. By using a resist pattern used for forming an IDT electrode, the first insulating layer in which the IDT electrode is to be formed is removed. An electrode film made of a metal having a density higher than Al or an alloy primarily including such a metal is disposed in the area in which the first insulating layer is removed so as to form the IDT electrode. The resist pattern remaining on the first insulating layer is removed. A second insulating layer is formed to cover the first insulating layer and the IDT electrode.

摘要翻译： 在SAW器件的制造方法中，在压电LiTaO 3衬底的整个表面上形成第一绝缘层。 通过使用用于形成IDT电极的抗蚀剂图案，去除其中将形成IDT电极的第一绝缘层。 在除去第一绝缘层的区域中设置由密度高于Al的金属或主要包含金属的合金制成的电极膜，以形成IDT电极。 去除残留在第一绝缘层上的抗蚀剂图案。 形成第二绝缘层以覆盖第一绝缘层和IDT电极。

公开(公告)号：US07109634B2

公开(公告)日：2006-09-19

申请号：US10734228

申请日：2003-12-15

申请人： Takeshi Nakao ,  Kenji Nishiyama ,  Tetsuya Kimura ,  Michio Kadota

发明人： Takeshi Nakao ,  Kenji Nishiyama ,  Tetsuya Kimura ,  Michio Kadota

IPC分类号： H03H9/25

CPC分类号： H03H9/02834 ,  H03H9/02677

摘要： A surface acoustic wave device with improved reflection characteristics, in which an insulating film is formed so as to cover an electrode film, and the electrode film is made from Al or an Al alloy, includes a piezoelectric substrate, an electrode film which is formed of Al or an alloy including Al as a major component on the piezoelectric substrate and which defines at least one interdigital transducer, and an insulating film arranged on the piezoelectric substrate so as to cover the electrode film, the average density of the electrode film is less than or equal to about 1.5 times the density of the insulating film, wherein the top surface of the insulating film is planarized.

摘要翻译： 具有改善的反射特性的表面声波器件，其中形成绝缘膜以覆盖电极膜，并且所述电极膜由Al或Al合金制成，包括压电基片，电极膜，由 Al或包含Al作为主要成分的合金，并且限定至少一个叉指换能器，以及布置在压电基板上以覆盖电极膜的绝缘膜，电极膜的平均密度小于 或等于绝缘膜密度的约1.5倍，其中绝缘膜的顶表面被平坦化。

公开(公告)号：US08810104B2

公开(公告)日：2014-08-19

申请号：US12781050

申请日：2010-05-17

申请人： Shunsuke Kido ,  Takeshi Nakao ,  Yasuharu Nakai ,  Kenji Nishiyama ,  Michio Kadota

发明人： Shunsuke Kido ,  Takeshi Nakao ,  Yasuharu Nakai ,  Kenji Nishiyama ,  Michio Kadota

IPC分类号： H03H9/25

CPC分类号： H03H9/02834 ,  H03H3/10 ,  Y10T29/42 ,  Y10T29/49005 ,  Y10T29/49155 ,  Y10T29/49165

摘要： A surface acoustic wave device includes a piezoelectric substrate, at least one interdigital transducer (IDT) electrode provided on the piezoelectric substrate, and an insulator layer to improve a temperature characteristic arranged so as to cover the IDT electrode. When a surface of the insulator layer is classified into a first surface region under which the IDT electrode is positioned and a second surface region under which no IDT electrode is positioned, the surface of the insulator layer in at least one portion of the second surface region is higher than the surface of the insulator layer from the piezoelectric substrate in at least one portion of the first surface region by at least about 0.001λ, where the wavelength of an acoustic wave is λ.

摘要翻译： 表面声波装置包括压电基板，设置在压电基板上的至少一个叉指式换能器（IDT）电极和用于改善覆盖IDT电极的温度特性的绝缘体层。 当将绝缘体层的表面划分为IDT电极所在的第一表面区域和没有IDT电极的第二表面区域时，在第二表面区域的至少一部分中的绝缘体层的表面 在距离第一表面区域的至少一部分中的压电衬底的绝缘体层的表面高至少约0.001λ，其中声波的波长为λ。

公开(公告)号：US08427032B2

公开(公告)日：2013-04-23

申请号：US13347730

申请日：2012-01-11

申请人： Kenji Nishiyama ,  Takeshi Nakao ,  Michio Kadota

发明人： Kenji Nishiyama ,  Takeshi Nakao ,  Michio Kadota

IPC分类号： H01L41/08

CPC分类号： H03H9/02669

摘要： A surface acoustic wave device prevents a decrease in yield and a decrease in reliability, such as an impulse withstand voltage, and achieves good frequency characteristics, even when using higher frequencies. The surface acoustic wave device includes an IDT electrode disposed on a piezoelectric substrate, and a first insulating film and at least one second insulating film disposed on the IDT electrode, and utilizes a higher-order mode of an SH wave, in which the acoustic velocity of a surface acoustic wave in the first insulating film located closer to the IDT electrode than the insulating film at an outermost surface is higher than the acoustic velocity of a surface acoustic wave in the second insulating film located at the outermost surface.

摘要翻译： 表面声波装置即使在使用较高频率的情况下，也可以防止产量的降低和可靠性的降低，例如脉冲耐受电压，并实现良好的频率特性。 表面声波装置包括设置在压电基板上的IDT电极和设置在IDT电极上的第一绝缘膜和至少一个第二绝缘膜，并且利用SH波的高阶模式，其中声速 在比最外表面处的绝缘膜更靠近IDT电极的第一绝缘膜中的表面声波的声表面波的声波高于位于最外表面的第二绝缘膜中的表面声波的声速。

公开(公告)号：US07411334B2

公开(公告)日：2008-08-12

申请号：US11674928

申请日：2007-02-14

申请人： Kenji Nishiyama ,  Takeshi Nakao ,  Michio Kadota

发明人： Kenji Nishiyama ,  Takeshi Nakao ,  Michio Kadota

IPC分类号： H01L41/08

CPC分类号： H03H9/02929 ,  H03H3/10 ,  H03H9/02559 ,  H03H9/14538 ,  Y10T29/42 ,  Y10T29/49016 ,  Y10T29/4913 ,  Y10T29/49135 ,  Y10T29/49155

摘要： In a manufacturing method for a SAW apparatus a first insulating layer is formed on the entire surface of a piezoelectric LiTaO3 substrate. By using a resist pattern used for forming an IDT electrode, the first insulating layer in which the IDT electrode is to be formed is removed. An electrode film made of a metal having a density higher than Al or an alloy primarily including such a metal is disposed in the area in which the first insulating layer is removed so as to form the IDT electrode. The resist pattern remaining on the first insulating layer is removed. A second insulating layer is formed to cover the first insulating layer and the IDT electrode.

摘要翻译： 在SAW器件的制造方法中，在压电LiTaO 3衬底的整个表面上形成第一绝缘层。 通过使用用于形成IDT电极的抗蚀剂图案，去除其中将形成IDT电极的第一绝缘层。 在除去第一绝缘层的区域中设置由密度高于Al的金属或主要包含金属的合金制成的电极膜，以形成IDT电极。 去除残留在第一绝缘层上的抗蚀剂图案。 形成第二绝缘层以覆盖第一绝缘层和IDT电极。