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    CDTE SEMICONDUCTOR SUBSTRATE FOR EPITAXIAL GROWTH AND SUBSTRATE CONTAINER
    1.
    发明申请
    CDTE SEMICONDUCTOR SUBSTRATE FOR EPITAXIAL GROWTH AND SUBSTRATE CONTAINER 有权
    用于外延生长和底物容器的CDTE半导体衬底

    公开(公告)号：US20110233729A1

    公开(公告)日：2011-09-29

    申请号：US13131614

    申请日：2010-09-30

    申请人： Kenji Suzuki ,  Hideyuki Taniguchi ,  Hideki Kurta ,  Ryuichi Hirano

    发明人： Kenji Suzuki ,  Hideyuki Taniguchi ,  Hideki Kurta ,  Ryuichi Hirano

    IPC分类号： H01L29/22 ,  B65D85/00

    CPC分类号： C30B29/48 ,  C30B25/186 ,  H01L21/02024 ,  H01L21/02411 ,  H01L21/02562 ,  H01L21/463

    摘要： Provided is a CdTe-based semiconductor substrate for epitaxial growth, which is capable of growing good-quality epitaxial crystals without urging a substrate user to implement etching treatment before the epitaxial growth.A CdTe-based semiconductor substrate, in which tracks of linear polishing damage with a depth of 1 nm or more are not observed within a viewing range of 10 μm×10 μm when a surface of the substrate is observed by an atomic force microscope, and orange peel defects are not observed when the surface of the substrate is visually observed under a fluorescent lamp, can grow the good-quality epitaxial crystals.

    摘要翻译： 提供了一种用于外延生长的CdTe基半导体衬底，其能够在不促使衬底用户在外延生长之前实施蚀刻处理的同时生长良好质量的外延晶体。 当通过原子力显微镜观察基板的表面时，在10μm×10μm的观察范围内未观察到具有1nm以上的深度的线性抛光损伤的轨迹的CdTe系半导体基板， 在荧光灯下目视观察基板的表面时，不会观察到橙皮缺陷，可以生长优质的外延晶体。

    CdTe semiconductor substrate for epitaxial growth and substrate container
    2.
    发明授权
    CdTe semiconductor substrate for epitaxial growth and substrate container 有权
    用于外延生长的CdTe半导体衬底和衬底容器

    公开(公告)号：US08513775B2

    公开(公告)日：2013-08-20

    申请号：US13131614

    申请日：2010-09-30

    申请人： Kenji Suzuki ,  Hideyuki Taniguchi ,  Hideki Kurita ,  Ryuichi Hirano

    发明人： Kenji Suzuki ,  Hideyuki Taniguchi ,  Hideki Kurita ,  Ryuichi Hirano

    IPC分类号： H01L29/22 ,  H01L31/0328 ,  H01L31/0296 ,  H01L31/00 ,  H01L31/0336

    CPC分类号： C30B29/48 ,  C30B25/186 ,  H01L21/02024 ,  H01L21/02411 ,  H01L21/02562 ,  H01L21/463

    摘要： Provided is a CdTe-based semiconductor substrate for epitaxial growth, which is capable of growing good-quality epitaxial crystals without urging a substrate user to implement etching treatment before the epitaxial growth.A CdTe-based semiconductor substrate, in which tracks of linear polishing damage with a depth of 1 nm or more are not observed within a viewing range of 10 μm×10 μm when a surface of the substrate is observed by an atomic force microscope, and orange peel defects are not observed when the surface of the substrate is visually observed under a fluorescent lamp, can grow the good-quality epitaxial crystals.

    摘要翻译： 提供了一种用于外延生长的CdTe基半导体衬底，其能够在不促使衬底用户在外延生长之前实施蚀刻处理的同时生长良好质量的外延晶体。 当通过原子力显微镜观察基板的表面时，在10mum×10um的观察范围内未观察到具有1nm以上的深度的线性抛光损伤的轨迹的CdTe系半导体基板， 在荧光灯下目视观察基板的表面时，不会观察到橙皮缺陷，可以生长优质的外延晶体。

    CdTe-base compound semiconductor single crystal for electro-optic element
    3.
    发明授权
    CdTe-base compound semiconductor single crystal for electro-optic element 有权
    用于电光元件的CdTe基化合物半导体单晶

    公开(公告)号：US07002230B2

    公开(公告)日：2006-02-21

    申请号：US10771359

    申请日：2004-02-05

    申请人： Ryuichi Hirano ,  Hideyuki Taniguchi

    发明人： Ryuichi Hirano ,  Hideyuki Taniguchi

    IPC分类号： H01L31/00

    CPC分类号： H01L31/02963 ,  C30B11/00 ,  C30B29/48 ,  G01R15/241 ,  G02F1/0018 ,  G02F1/0305 ,  G02F2202/106

    摘要： In case of chlorine doping, a CdTe-base compound semiconductor single crystal used for an electro-optic element has a crystal which is set to chlorine concentration ranging from 0.1 ppmwt to 5.0 ppmwt and has no precipitation having diameter of 2 μm or above. In case of chlorine doping, an indium doping, a CdTe-base compound semiconductor single crystal used for an electro-optic element has a crystal which is obtained from a CdTe material melt, to which indium is doped at concentration ranging from 0.01 ppmwt to 1.0 ppmwt, according to a liquid phase epitaxial growth method and has a solidification ratio of 0.9 or below.

    摘要翻译： 在氯掺杂的情况下，用于电光元件的CdTe基化合物半导体单晶具有设定为氯浓度为0.1ppm至5.0ppmwt且不具有2μm或更大直径的沉淀的晶体。 在氯掺杂的情况下，铟掺杂，用于电光元件的CdTe基化合物半导体单晶具有从CdTe材料熔体获得的晶体，铟掺杂浓度范围为0.01ppm至1.0 ppmwt，根据液相外延生长法，固化比为0.9以下。

    Permanent magnet synchronous motor
    5.
    发明授权
    Permanent magnet synchronous motor 有权
    永磁同步电机

    公开(公告)号：US06727627B1

    公开(公告)日：2004-04-27

    申请号：US10019286

    申请日：2002-01-02

    申请人： Kenji Sasaki ,  Teruo Tamura ,  Michihiro Yoshida ,  Toru Takimoto ,  Hideyuki Taniguchi ,  Hiroyuki Uesaka

    发明人： Kenji Sasaki ,  Teruo Tamura ,  Michihiro Yoshida ,  Toru Takimoto ,  Hideyuki Taniguchi ,  Hiroyuki Uesaka

    IPC分类号： H02K1716

    CPC分类号： H02K1/276 ,  H02K21/46

    摘要： A synchronous motor includes a stator, a rotor and permanent magnets. The rotor includes a rotor iron core and rotatable relative to the stator, a plurality of conductor bars accommodated within corresponding slots in the rotor iron core. The conductor bars have their opposite ends shortcircuited by respective shortcircuit rings to form a starter squirrel cage conductor. The rotor also have a plurality of magnet retaining slots defined therein at a location on an inner side of the conductor bars, in which hole permanent magnets are embedded.

    摘要翻译： 同步电动机包括定子，转子和永磁体。 转子包括转子铁芯并且可相对于定子旋转，多个导体杆容纳在转子铁芯中的相应槽内。 导体条的相对端由相应的短路环短路以形成起动器鼠笼导体。 转子还具有限定在其内的多个磁体保持槽，导体棒的内侧上的一个位置处嵌有孔永久磁体。

    Permanent magnet synchronous motor
    6.
    发明授权
    Permanent magnet synchronous motor 有权
    永磁同步电机

    公开(公告)号：US07019427B2

    公开(公告)日：2006-03-28

    申请号：US11035196

    申请日：2005-01-14

    申请人： Kenji Sasaki ,  Teruo Tamura ,  Michihiro Yoshida ,  Toru Takimoto ,  Hideyuki Taniguchi ,  Hiroyuki Uesaka

    发明人： Kenji Sasaki ,  Teruo Tamura ,  Michihiro Yoshida ,  Toru Takimoto ,  Hideyuki Taniguchi ,  Hiroyuki Uesaka

    IPC分类号： H02K21/12 ,  H02K1/27 ,  H02K17/16

    CPC分类号： H02K1/276 ,  H02K21/46

    摘要： A synchronous motor includes a stator, a rotor and permanent magnets. The rotor includes a rotor iron core rotatable relative to the stator, and a plurality of conductor bars accommodated within corresponding slots in the rotor iron core. The conductor bars have their opposite ends shortcircuited by respective shortcircuit rings to form a starter cage conductor. The rotor also has a plurality of magnet retaining slots defined therein at a location on an inner side of the conductor bars, in which hole permanent magnets are embedded.

    摘要翻译： 同步电动机包括定子，转子和永磁体。 转子包括可相对于定子旋转的转子铁芯和容纳在转子铁芯中的相应槽内的多个导体棒。 导体棒的相对端由相应的短路环短路以形成起动器架导体。 转子还具有限定在其内的多个磁体保持槽，导体棒的内侧的位置处嵌有孔永久磁体。

    Permanent magnet synchronous motor
    8.
    发明授权
    Permanent magnet synchronous motor 有权
    永磁同步电机

    公开(公告)号：US07372183B2

    公开(公告)日：2008-05-13

    申请号：US11622876

    申请日：2007-01-12

    申请人： Kenji Sasaki ,  Teruo Tamura ,  Michihiro Yoshida ,  Toru Takimoto ,  Hideyuki Taniguchi ,  Hiroyuki Uesaka

    发明人： Kenji Sasaki ,  Teruo Tamura ,  Michihiro Yoshida ,  Toru Takimoto ,  Hideyuki Taniguchi ,  Hiroyuki Uesaka

    IPC分类号： H02K1/27 ,  H02K21/12 ,  H02K17/16

    CPC分类号： H02K1/276 ,  H02K21/46

    摘要： A synchronous motor includes a stator, a rotor and permanent magnets. The rotor includes a rotor iron core that is rotatable relative to the stator, and conductor bars accommodated within corresponding slots in the rotor iron core. The conductor bars have their opposite ends short-circuited by respective shortcircuit rings to form a starter cage conductor. The rotor also has a plurality of magnet retaining holes defined therein, in which permanent magnets are embedded. The conductor bar holes are positioned in an axial direction and inwardly from the magnet retaining holes. The conductor bars within the holes protrude outwardly from an axial end of the rotor iron core to form projections for securing an end plate to the end of the rotor iron core, the end plate comprising a non-magnetizable material.

    摘要翻译： 同步电动机包括定子，转子和永磁体。 转子包括可相对于定子旋转的转子铁芯，以及容纳在转子铁芯中的相应槽内的导体棒。 导体条的相对端通过相应的短路环短路以形成起动器保持架导体。 转子还具有限定在其中的多个磁体保持孔，其中嵌入有永磁体。 导体棒孔位于轴向方向上并且从磁体保持孔向内定位。 孔内的导体棒从转子铁芯的轴向端部向外突出，以形成用于将端板固定到转子铁芯的端部的突出部，该端板包括不可磁化的材料。