公开(公告)号：US20110233729A1

公开(公告)日：2011-09-29

申请号：US13131614

申请日：2010-09-30

申请人： Kenji Suzuki ,  Hideyuki Taniguchi ,  Hideki Kurta ,  Ryuichi Hirano

发明人： Kenji Suzuki ,  Hideyuki Taniguchi ,  Hideki Kurta ,  Ryuichi Hirano

IPC分类号： H01L29/22 ,  B65D85/00

CPC分类号： C30B29/48 ,  C30B25/186 ,  H01L21/02024 ,  H01L21/02411 ,  H01L21/02562 ,  H01L21/463

摘要： Provided is a CdTe-based semiconductor substrate for epitaxial growth, which is capable of growing good-quality epitaxial crystals without urging a substrate user to implement etching treatment before the epitaxial growth.A CdTe-based semiconductor substrate, in which tracks of linear polishing damage with a depth of 1 nm or more are not observed within a viewing range of 10 μm×10 μm when a surface of the substrate is observed by an atomic force microscope, and orange peel defects are not observed when the surface of the substrate is visually observed under a fluorescent lamp, can grow the good-quality epitaxial crystals.

摘要翻译： 提供了一种用于外延生长的CdTe基半导体衬底，其能够在不促使衬底用户在外延生长之前实施蚀刻处理的同时生长良好质量的外延晶体。 当通过原子力显微镜观察基板的表面时，在10μm×10μm的观察范围内未观察到具有1nm以上的深度的线性抛光损伤的轨迹的CdTe系半导体基板， 在荧光灯下目视观察基板的表面时，不会观察到橙皮缺陷，可以生长优质的外延晶体。

公开(公告)号：US08513775B2

公开(公告)日：2013-08-20

申请号：US13131614

申请日：2010-09-30

申请人： Kenji Suzuki ,  Hideyuki Taniguchi ,  Hideki Kurita ,  Ryuichi Hirano

发明人： Kenji Suzuki ,  Hideyuki Taniguchi ,  Hideki Kurita ,  Ryuichi Hirano

IPC分类号： H01L29/22 ,  H01L31/0328 ,  H01L31/0296 ,  H01L31/00 ,  H01L31/0336

CPC分类号： C30B29/48 ,  C30B25/186 ,  H01L21/02024 ,  H01L21/02411 ,  H01L21/02562 ,  H01L21/463

摘要： Provided is a CdTe-based semiconductor substrate for epitaxial growth, which is capable of growing good-quality epitaxial crystals without urging a substrate user to implement etching treatment before the epitaxial growth.A CdTe-based semiconductor substrate, in which tracks of linear polishing damage with a depth of 1 nm or more are not observed within a viewing range of 10 μm×10 μm when a surface of the substrate is observed by an atomic force microscope, and orange peel defects are not observed when the surface of the substrate is visually observed under a fluorescent lamp, can grow the good-quality epitaxial crystals.

摘要翻译： 提供了一种用于外延生长的CdTe基半导体衬底，其能够在不促使衬底用户在外延生长之前实施蚀刻处理的同时生长良好质量的外延晶体。 当通过原子力显微镜观察基板的表面时，在10mum×10um的观察范围内未观察到具有1nm以上的深度的线性抛光损伤的轨迹的CdTe系半导体基板， 在荧光灯下目视观察基板的表面时，不会观察到橙皮缺陷，可以生长优质的外延晶体。

公开(公告)号：US07875957B2

公开(公告)日：2011-01-25

申请号：US12438636

申请日：2007-08-17

申请人： Kenji Suzuki ,  Ryuichi Hirano ,  Hideki Kurita

发明人： Kenji Suzuki ,  Ryuichi Hirano ,  Hideki Kurita

IPC分类号： C01B19/00 ,  C01B19/04 ,  H01L29/22

CPC分类号： C30B29/48 ,  C30B11/00 ,  C30B33/00

摘要： Provided is a semiconductor substrate for epitaxial growth which does not require any etching treatment as a pretreatment in the stage of performing an epitaxial growth of HgCdTe film. A CdTe system compound semiconductor substrate for the epitaxial growth of the HgCdTe film is housed in an inactive gas atmosphere, in a predetermined period of time (for example, 10 hours) after mirror finish treatment thereof, to thereby regulate the proportion of Te oxide of the total amount of Te on the substrate surface which is obtained by XPS measurement so as to be not more than 30%.

摘要翻译： 提供一种用于外延生长的半导体衬底，其在进行HgCdTe膜的外延生长的阶段中不需要任何蚀刻处理作为预处理。 用于HgCdTe膜的外延生长的CdTe系化合物半导体衬底在镜面抛光处理之后的预定时间（例如10小时）内容纳在惰性气体气氛中，从而调节 通过XPS测量获得的基板表面上的Te的总量不大于30％。

公开(公告)号：US20090269271A1

公开(公告)日：2009-10-29

申请号：US12438636

申请日：2007-08-17

申请人： Kenji Suzuki ,  Ryuichi Hirano ,  Hideki Kurita

发明人： Kenji Suzuki ,  Ryuichi Hirano ,  Hideki Kurita

IPC分类号： C01B19/04

CPC分类号： C30B29/48 ,  C30B11/00 ,  C30B33/00

摘要： Provided is a semiconductor substrate for epitaxial growth which does not require any etching treatment as a pretreatment in the stage of performing an epitaxial growth of HgCdTe film. A CdTe system compound semiconductor substrate for the epitaxial growth of the HgCdTe film is housed in an inactive gas atmosphere, in a predetermined period of time (for example, 10 hours) after mirror finish treatment thereof, to thereby regulate the proportion of Te oxide of the total amount of Te on the substrate surface which is obtained by XPS measurement so as to be not more than 30%.

摘要翻译： 提供一种用于外延生长的半导体衬底，其在进行HgCdTe膜的外延生长的阶段中不需要任何蚀刻处理作为预处理。 用于HgCdTe膜的外延生长的CdTe系化合物半导体衬底在镜面抛光处理之后的预定时间（例如10小时）内容纳在惰性气体气氛中，从而调节 通过XPS测量获得的基板表面上的Te的总量不大于30％。

公开(公告)号：US20080247935A1

公开(公告)日：2008-10-09

申请号：US10593036

申请日：2005-02-15

申请人： Kenji Suzuki ,  Ryuichi Hirano ,  Masashi Nakamura

发明人： Kenji Suzuki ,  Ryuichi Hirano ,  Masashi Nakamura

IPC分类号： H01L29/20

CPC分类号： C30B29/40 ,  C30B25/18

摘要： It is to provide a substrate for epitaxial growth, which is capable of improving a surface state of an epitaxial layer at microroughness level. In a substrate for epitaxial growth, when haze is defined as a value calculated by dividing intensity of scattered light obtained when light is incident from a predetermined light source onto a surface of a substrate, by intensity of the incident light from the light source, the haze is not more than 2 ppm all over an effectively used area of the substrate and an off-angle with respect to a plane direction is 0.05 to 0.10°.

摘要翻译： 提供用于外延生长的衬底，其能够在微粗糙度水平下改善外延层的表面状态。 在用于外延生长的基板中，当雾度被定义为通过将光从预定光源入射到基板的表面上时获得的散射光的强度，通过来自光源的入射光的强度来计算， 在基板的有效使用面积上的雾度不超过2ppm，相对于平面方向的偏角为0.05〜0.10°。

公开(公告)号：US09506416B2

公开(公告)日：2016-11-29

申请号：US14095567

申请日：2013-12-03

申请人： Kenji Suzuki ,  Hiroshi Miyamoto ,  Yasushi Iwazaki

发明人： Kenji Suzuki ,  Hiroshi Miyamoto ,  Yasushi Iwazaki

IPC分类号： F02D41/00 ,  F02D41/14

CPC分类号： F02D41/1495 ,  F02D41/0085 ,  F02D41/1456

摘要： A first parameter correlated with a degree of a variation in the output from the air-fuel ratio sensor is calculated. A possible range of a second parameter representing a degree of a variation in air-fuel ratio among the cylinders is determined based on the first parameter. The first parameter is calculated with an air-fuel ratio of a predetermined cylinder forcibly changed. A difference between the unchanged first parameter and the forcibly changed first parameter is determined. A first characteristic representing a relation between the second parameter and the difference is determined based on the possible range of the second parameter and the difference. One of the determination value and the first parameter calculated before the forced change is corrected based on inclination of the determined first characteristic.

摘要翻译： 计算与空燃比传感器的输出的变化程度相关的第一参数。 基于第一参数来确定表示气缸中的空燃比的变化程度的第二参数的可能范围。 第一参数是以预定的气缸的空燃比强制变化的方式计算的。 确定未改变的第一参数和强制改变的第一参数之间的差异。 基于第二参数的可能范围和差异来确定代表第二参数和差异之间的关系的第一特征。 基于确定的第一特性的倾斜度来校正在强制改变之前计算的确定值和第一参数中的一个。

公开(公告)号：US09485328B2

公开(公告)日：2016-11-01

申请号：US13409499

申请日：2012-03-01

申请人： Yosuke Abe ,  Minoru Yoneyama ,  Kenji Suzuki ,  Yuji Minohoshi ,  Masaki Morimoto ,  Kiwamu Takahashi ,  Mitsuru Kida ,  Kosuke Shimizu

发明人： Yosuke Abe ,  Minoru Yoneyama ,  Kenji Suzuki ,  Yuji Minohoshi ,  Masaki Morimoto ,  Kiwamu Takahashi ,  Mitsuru Kida ,  Kosuke Shimizu

IPC分类号： A63F13/58 ,  H04L29/06 ,  A63F13/812

CPC分类号： H04L67/38 ,  A63F13/58 ,  A63F13/812 ,  A63F2300/5573 ,  A63F2300/6018

摘要： The game control device may include a storage unit, a first match-up executing unit, a character ability updating unit, and a second match-up executing unit. The storage unit stores an ability value of each player character. The first match-up executing unit executes a first match-up between two player characters in response to input of a communication terminal, and to determine a result of the first match-up based on the stored ability value of each player character. The character ability updating unit updates, based on the result of the first match-up, the ability values of the two player characters, and causes the storage unit to store the updated ability values. The second match-up executing unit executes a second match-up between player characters independently from the first match-up without input of the communication terminal, and determines a result of the second match-up based on the stored ability value of each player character.

摘要翻译： 游戏控制装置可以包括存储单元，第一匹配执行单元，字符能力更新单元和第二匹配执行单元。 存储单元存储每个玩家角色的能力值。 第一匹配执行单元响应于通信终端的输入执行两个播放器字符之间的第一匹配，并且基于每个游戏者角色的存储能力值来确定第一匹配的结果。 角色能力更新单元基于第一匹配的结果更新两个玩家角色的能力值，并使存储单元存储更新的能力值。 第二匹配执行单元在没有输入通信终端的情况下独立于第一匹配执行玩家角色之间的第二匹配，并且基于每个玩家角色的存储能力值来确定第二匹配的结果 。

公开(公告)号：US09460871B2

公开(公告)日：2016-10-04

申请号：US14006535

申请日：2012-04-03

申请人： Yasuhiro Naka ,  Kouetsu Takaya ,  Kenji Suzuki

发明人： Yasuhiro Naka ,  Kouetsu Takaya ,  Kenji Suzuki

IPC分类号： H01H11/00 ,  H01H11/02 ,  H01H11/04 ,  H01H65/00 ,  H01H9/44 ,  H01H50/14 ,  H01H50/16 ,  H01H50/38 ,  H01H51/06 ,  H01H49/00 ,  H01H1/66 ,  H01H50/04 ,  H01H50/02

CPC分类号： H01H11/00 ,  H01H1/66 ,  H01H9/443 ,  H01H49/00 ,  H01H50/045 ,  H01H50/14 ,  H01H50/163 ,  H01H50/38 ,  H01H51/065 ,  H01H2050/025 ,  Y10T29/49105

摘要： A method for assembling an arc-extinguishing chamber of an electromagnetic contactor includes a step of fixing a pair of fixed contacts each including a support conductor and a C-shaped part, to a bottom plate part of the arc-extinguishing chamber having a tub-shape with one end being open, the C-shaped part defining inside of the arc-extinguishing chamber; a step of installing an insulation cover covering a part other than a contact point part of each C-shaped part of the pair of fixed contacts; and a step of disposing a movable contact to be capable of contacting to and separating from the contact point parts of the fixed contacts.

摘要翻译： 一种组装电磁接触器的灭弧室的方法包括将一对包括支撑导体和C形部分的固定触头固定到灭弧室的底板部分上的步骤， 形状，其一端是开放的，C形部分限定在灭弧室内部; 安装覆盖除了一对固定触点的每个C形部分的接触点部分之外的部分的绝缘盖的步骤; 以及设置能够接触固定触点的接点部分并与其分离的可动触头的步骤。

公开(公告)号：US09368140B2

公开(公告)日：2016-06-14

申请号：US11046323

申请日：2005-01-27

申请人： Shingo Tsuda ,  Kenji Suzuki

发明人： Shingo Tsuda ,  Kenji Suzuki

IPC分类号： G11B5/55 ,  G11B5/48 ,  G11B5/54

CPC分类号： G11B5/5526 ,  G11B5/4806 ,  G11B5/54

摘要： Embodiments of the invention provide an actuator head suspension assembly having an efficient voice coil. In one embodiment, a voice coil is formed in a circular or any other shape than the conventional sectorial shape to increase the efficiency of the voice coil and diminish oscillation and noise of an actuator head suspension assembly. The voice coil shape is selected such that the proportion of an out-of-plane force becomes smaller than that in the conventional sectorial voice coil and the proportion contributing as weight to the oscillation energy also becomes smaller.

摘要翻译： 本发明的实施例提供一种具有有效音圈的致动器头悬挂组件。 在一个实施例中，音圈形成为圆形或任何其他形状，而不是传统的扇形，以提高音圈的效率，并减少致动器头悬挂组件的振荡和噪音。 选择音圈形状使得平面外力的比例变得比常规扇形音圈中的比例小，并且作为对振荡能量的重量的比例也变小。

公开(公告)号：US09328685B2

公开(公告)日：2016-05-03

申请号：US14212400

申请日：2014-03-14

申请人： Kenji Suzuki ,  Hiroshi Miyamoto ,  Yasushi Iwazaki ,  Senji Kato

发明人： Kenji Suzuki ,  Hiroshi Miyamoto ,  Yasushi Iwazaki ,  Senji Kato

IPC分类号： F02D41/00 ,  F02D41/14 ,  F02D41/24

CPC分类号： F02D41/1495 ,  F02D41/0085 ,  F02D41/1441 ,  F02D41/1456 ,  F02D41/2438

摘要： A first parameter correlated with a degree of fluctuation of output from an air-fuel ratio sensor is calculated, and whether or not the calculated first parameter has a value between a predetermined primary determination upper-limit value α1H and a primary determination lower-limit value is determined. Such forced active control as reduces an air-fuel ratio shift in one of the cylinders which is subjected to a most significant air-fuel ratio shift is performed when the calculated first parameter is determined to have a value between the predetermined primary determination upper-limit value and the primary determination lower-limit value. A first parameter is calculated while the forced active control is in execution. The calculated first parameter is compared with a predetermined secondary determination value to determine whether or not variation abnormality is present.

摘要翻译： 计算与空燃比传感器的输出的波动程度相关的第一参数，并且计算出的第一参数是否具有预定的一次判定上限值α1H和一次判定下限值之间的值 决心，决意，决定。 当所计算出的第一参数被确定为具有预定的主要确定上限之间的值时，执行这种强制主动控制，以减少经受最大空燃比移动的一个气缸中的空燃比偏移 值和主要判定下限值。 在强制主动控制正在执行时计算第一个参数。 将计算出的第一参数与预定的次级判定值进行比较，以确定是否存在变化异常。