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    Impurity-activating thermal process method and thermal process apparatus
    1.
    发明授权
    Impurity-activating thermal process method and thermal process apparatus 有权
    杂质活化热处理方法和热处理装置

    公开(公告)号：US07981816B2

    公开(公告)日：2011-07-19

    申请号：US12363225

    申请日：2009-01-30

    申请人： Kazuma Takahashi ,  Kenji Yoneda

    发明人： Kazuma Takahashi ,  Kenji Yoneda

    IPC分类号： H01L21/425 ,  H01L21/26 ,  H01L21/42 ,  H01L21/00

    CPC分类号： H01L21/67115 ,  H01L21/2686 ,  H01L21/324 ,  H01L29/6659 ,  H01L29/7833

    摘要： An impurity-activating thermal process is performed after a target is subjected to an impurity introduction step. In this thermal process, while a spike RTA process including a holding period for holding a temperature at a predetermined temperature is performed, at least one iteration of millisecond annealing at a temperature higher than the predetermined temperature is performed during the holding period of the spike RTA process.

    摘要翻译： 在对靶进行杂质引入步骤之后进行杂质活化热处理。 在该热处理中，虽然进行包括保持温度在预定温度下的保持期的尖峰RTA工艺，但是在尖峰RTA的保持期间内进行至少一次在高于预定温度的温度下进行的毫秒退火 处理。

    Method and apparatus for fabricating semiconductor device
    2.
    发明授权
    Method and apparatus for fabricating semiconductor device 有权
    用于制造半导体器件的方法和装置

    公开(公告)号：US07291535B2

    公开(公告)日：2007-11-06

    申请号：US11000209

    申请日：2004-12-01

    申请人： Masahiko Niwayama ,  Kenji Yoneda ,  Kazuma Takahashi

    发明人： Masahiko Niwayama ,  Kenji Yoneda ,  Kazuma Takahashi

    IPC分类号： H01L21/336

    CPC分类号： H01L29/6659 ,  H01L21/26513 ,  H01L21/26586 ,  H01L29/045 ,  H01L29/6656 ,  H01L29/7833

    摘要： A method for fabricating a semiconductor device includes the steps of: forming a semiconductor region of a first conductive type on a semiconductor wafer; forming a gate electrode on the semiconductor region; on the semiconductor region, forming a first insulating film over the whole surface including the upper surface of the gate electrode; by removing the formed first insulating film through etching from the top surface side, forming first sidewalls, covering the side surfaces of the gate electrode, from the first insulating film; and by implanting first impurity ions of a second conductive type to the semiconductor region by using an ion implantation device capable of processing a plurality of semiconductor wafers collectively, forming first impurity diffusion regions on both sides of the gate electrode in the semiconductor region. In the step of forming the first impurity diffusion regions, implantation of the first impurity ions are dividedly performed a plurality of times, and the semiconductor wafer is rotated in its wafer surface for each ion implantation.

    摘要翻译： 一种制造半导体器件的方法包括以下步骤：在半导体晶片上形成第一导电类型的半导体区域; 在所述半导体区域上形成栅电极; 在所述半导体区域上，在包括所述栅电极的上表面的整个表面上形成第一绝缘膜; 通过从上表面侧蚀刻去除形成的第一绝缘膜，从第一绝缘膜形成覆盖栅电极的侧表面的第一侧壁; 并且通过使用能够一体地处理多个半导体晶片的离子注入装置将第二导电类型的第一杂质离子注入半导体区域，在半导体区域中的栅电极的两侧形成第一杂质扩散区。 在形成第一杂质扩散区域的步骤中，分散地进行第一杂质离子的注入多次，并且半导体晶片在其晶片表面中进行每次离子注入。

    Electronic device manufacturing apparatus
    3.
    发明申请
    Electronic device manufacturing apparatus 审中-公开
    电子装置制造装置

    公开(公告)号：US20050266649A1

    公开(公告)日：2005-12-01

    申请号：US11097140

    申请日：2005-04-04

    申请人： Masahiko Niwayama ,  Kenji Yoneda ,  Kazuma Takahashi

    发明人： Masahiko Niwayama ,  Kenji Yoneda ,  Kazuma Takahashi

    IPC分类号： H01L21/683 ,  H01L21/00 ,  H01L21/26 ,  H01L21/68 ,  H01L21/687

    CPC分类号： H01L21/68735 ,  H01L21/67098 ,  H01L21/67265

    摘要： An electronic device manufacturing apparatus is provided with a support which includes a shelf for supporting a substrate, a sensor which obtains the position of the substrate and a position correcting mechanism which corrects the position of the substrate. Or alternatively, an electronic device manufacturing apparatus is provided with a support which includes a shelf for supporting a substrate and the shelf includes a substrate support plane which forms an angle of 22° or more to 90° or less with a horizontal plane.

    摘要翻译： 一种电子装置制造装置，具有支撑体，该支撑体包括用于支撑基板的搁架，获得基板的位置的传感器和校正基板的位置的位置校正机构。 或者，电子装置制造装置设置有支撑体，该支撑体包括用于支撑基板的搁架，并且搁板包括与水平面形成22°以上至90°以下的角度的基板支撑面。

    Impurity-activating thermal process method and thermal process apparatus
    4.
    发明授权
    Impurity-activating thermal process method and thermal process apparatus 有权
    杂质活化热处理方法和热处理装置

    公开(公告)号：US08017528B2

    公开(公告)日：2011-09-13

    申请号：US12352977

    申请日：2009-01-13

    申请人： Kenji Yoneda ,  Kazuma Takahashi

    发明人： Kenji Yoneda ,  Kazuma Takahashi

    IPC分类号： H01L21/00

    CPC分类号： H01L21/26513 ,  H01L21/2686 ,  H01L21/324 ,  H01L29/6659 ,  H01L29/7833

    摘要： A thermal cycle includes: increasing a temperature from an initial temperature to a temperature T1 at an arbitrary rate R1 (° C./sec); holding the temperature at the temperature T1 for an arbitrary period t1 (sec); increasing the temperature from the temperature T1 to a temperature T2 at a rate R2 (° C./sec) of 1.0×107 (° C./sec) or less; and holding the temperature at the temperature T2 for a period t2 (sec) of 50 msec or less. The thermal cycle thereafter includes: decreasing the temperature from the temperature T2 to the temperature T1 at a rate R1′ (° C./sec) of 1.0×107 (° C./sec) or less; holding the temperature T1 for an arbitrary period t3 (sec); and decreasing the temperature from the temperature T1 to a final temperature at an arbitrary rate R2′ (° C./sec). Such a thermal cycle is successively repeated in a plurality of iterations.

    摘要翻译： 热循环包括：以任意速率R1（℃/秒）将温度从初始温度升高到温度T1; 将温度保持在温度T1任意时段t1（秒）; 以1.0×107（℃/秒）以下的速率R2（℃/秒）将温度从温度T1升温至温度T2; 并将温度保持在温度T2，持续时间t2（秒）为50毫秒或更短。 此后的热循环包括：以1.0×10 7（℃/秒）以下的速率R1'（℃/秒）将温度从温度T2降低到温度T1; 保持温度T1任意时间t3（秒）; 并以任意的速率R2'（℃/秒）将温度从温度T1降低到最终温度。 这样的热循环在多次迭代中连续重复。

    IMPURITY-ACTIVATING THERMAL PROCESS METHOD AND THERMAL PROCESS APPARATUS
    5.
    发明申请
    IMPURITY-ACTIVATING THERMAL PROCESS METHOD AND THERMAL PROCESS APPARATUS 有权
    热塑性热处理方法和热处理装置

    公开(公告)号：US20090197428A1

    公开(公告)日：2009-08-06

    申请号：US12363225

    申请日：2009-01-30

    申请人： Kazuma Takahashi ,  Kenji Yoneda

    发明人： Kazuma Takahashi ,  Kenji Yoneda

    IPC分类号： H01L21/00 ,  A21B1/06 ,  H01L21/30 ,  H01L21/40

    CPC分类号： H01L21/67115 ,  H01L21/2686 ,  H01L21/324 ,  H01L29/6659 ,  H01L29/7833

    摘要： An impurity-activating thermal process is performed after a target is subjected to an impurity introduction step. In this thermal process, while a spike RTA process including a holding period for holding a temperature at a predetermined temperature is performed, at least one iteration of millisecond annealing at a temperature higher than the predetermined temperature is performed during the holding period of the spike RTA process.

    摘要翻译： 在对靶进行杂质引入步骤之后进行杂质活化热处理。 在该热处理中，虽然进行包括保持温度在预定温度下的保持期的尖峰RTA工艺，但是在尖峰RTA的保持期间内进行至少一次在高于预定温度的温度下进行的毫秒退火 处理。

    Method and apparatus for fabricating semiconductor device
    6.
    发明申请
    Method and apparatus for fabricating semiconductor device 有权
    用于制造半导体器件的方法和装置

    公开(公告)号：US20050130382A1

    公开(公告)日：2005-06-16

    申请号：US11000209

    申请日：2004-12-01

    申请人： Masahiko Niwayama ,  Kenji Yoneda ,  Kazuma Takahashi

    发明人： Masahiko Niwayama ,  Kenji Yoneda ,  Kazuma Takahashi

    IPC分类号： H01L21/265 ,  C23C16/00 ,  H01L21/336 ,  H01L21/8238 ,  H01L29/04 ,  H01L29/78

    CPC分类号： H01L29/6659 ,  H01L21/26513 ,  H01L21/26586 ,  H01L29/045 ,  H01L29/6656 ,  H01L29/7833

    摘要： A method for fabricating a semiconductor device includes the steps of: forming a semiconductor region of a first conductive type on a semiconductor wafer; forming a gate electrode on the semiconductor region; on the semiconductor region, forming a first insulating film over the whole surface including the upper surface of the gate electrode; by removing the formed first insulating film through etching from the top surface side; forming first sidewalls, covering the side surfaces of the gate electrode, from the first insulating film; and by implanting first impurity ions of a second conductive type to the semiconductor region by using an ion implantation device capable of processing a plurality of semiconductor wafers collectively, forming first impurity diffusion regions on both sides of the gate electrode in the semiconductor region; In the step of forming the first impurity diffusion regions, implantation of the first impurity ions are dividedly performed a plurality of times, and the semiconductor wafer is rotated in its wafer surface for each ion implantation.

    摘要翻译： 一种制造半导体器件的方法包括以下步骤：在半导体晶片上形成第一导电类型的半导体区域; 在所述半导体区域上形成栅电极; 在所述半导体区域上，在包括所述栅电极的上表面的整个表面上形成第一绝缘膜; 通过从上表面侧的蚀刻去除形成的第一绝缘膜; 从所述第一绝缘膜形成覆盖所述栅电极的侧表面的第一侧壁; 并且通过使用能够共同处理多个半导体晶片的离子注入装置将第二导电类型的第一杂质离子注入半导体区域，在半导体区域中的栅电极的两侧形成第一杂质扩散区; 在形成第一杂质扩散区域的步骤中，分散地进行第一杂质离子的注入多次，并且半导体晶片在其晶片表面中进行每次离子注入。