公开(公告)号：US20050014855A1

公开(公告)日：2005-01-20

申请号：US10893640

申请日：2004-07-16

申请人： Kenneth Bruza ,  James Godschalx ,  Edward Shaffer ,  Dennis Smith ,  Paul Townsend ,  Kevin Bouck ,  Qing Shan Niu

发明人： Kenneth Bruza ,  James Godschalx ,  Edward Shaffer ,  Dennis Smith ,  Paul Townsend ,  Kevin Bouck ,  Qing Shan Niu

IPC分类号： G02F1/1333 ,  C08F32/04 ,  C08F36/22 ,  C08F38/00 ,  C08J9/26 ,  C08L25/06 ,  C08L65/00 ,  H01L21/312 ,  C08J9/00

CPC分类号： H01L21/02126 ,  C08J9/26 ,  C08J2365/00 ,  C08L25/06 ,  C08L65/00 ,  H01L21/02118 ,  H01L21/02203 ,  H01L21/02282 ,  H01L21/312 ,  C08L2666/04 ,  C08L25/00 ,  C08L2666/06

摘要： A suitable cross-linkable matrix precursor and a poragen can be treated to form a porous cross-linked matrix having a Tg of greater than 300° C. The porous matrix material has a lower dielectric constant than the corresponding non-porous matrix material, making the porous matrix material particularly attractive for a variety of electronic applications including integrated circuits, multichip modules, and flat panel display devices.

摘要翻译： 可以处理合适的可交联基质前体和孔，以形成Tg大于300℃的多孔交联基质。多孔基体材料具有比相应的无孔基体材料低的介电常数，使得 多孔基质材料对于包括集成电路，多芯片模块和平板显示装置的各种电子应用特别有吸引力。

公开(公告)号：US20060063393A1

公开(公告)日：2006-03-23

申请号：US11262237

申请日：2005-10-28

申请人： Edward Shaffer ,  Kevin Howard ,  Joost Waeterloos ,  Jack Hetzner ,  Paul Townsend ,  Lynne Mills ,  Sheila Gombar-Fetner

发明人： Edward Shaffer ,  Kevin Howard ,  Joost Waeterloos ,  Jack Hetzner ,  Paul Townsend ,  Lynne Mills ,  Sheila Gombar-Fetner

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/02118 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02282 ,  H01L21/0332 ,  H01L21/31144 ,  H01L21/3121 ,  H01L21/76801 ,  H01L21/7681 ,  H01L21/76811 ,  H01L21/76813 ,  H01L21/76829 ,  H01L21/76835 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： This invention is a method comprising providing a substrate, forming a first layer on the substrate, wherein the first layer has a dielectric constant of less than 3.0 and comprises an organic polymer, applying an organosilicate resin over the first layer, removing a portion of the organosilicate resin to expose a portion of the first layer, and removing the exposed portions of the first layer. The invention is also an integrated circuit article comprising an active substrate containing transistors and an electrical interconnect structure containing a pattern of metal lines separated, at least partially, by layers or regions of an organic polymeric material having a dielectric constant of less than 3.0 and further comprising a layer of an organosilicate resin above at least one layer of the organic polymer material.