摘要:
Embodiments of the invention relate to polycrystalline diamond (“PCD”) exhibiting enhanced diamond-to-diamond bonding. In an embodiment, PCD includes a plurality of diamond grains defining a plurality of interstitial regions. A metal-solvent catalyst occupies at least a portion of the plurality of interstitial regions. The plurality of diamond grains and the metal-solvent catalyst collectively exhibit a coercivity of about 115 Oersteads (“Oe”) or more and a specific magnetic saturation of about 15 Gauss·cm3/grams (“G·cm3/g”) or less. Other embodiments are directed to polycrystalline diamond compacts (“PDCs”) employing such PCD, methods of forming PCD and PDCs, and various applications for such PCD and PDCs in rotary drill bits, bearing apparatuses, and wire-drawing dies.
摘要:
Some embodiments relate to cutting element assemblies including a superabrasive cutting element that may be axially compressed to enhance the damage tolerance thereof, enclosed in an enclosure that exposes the superabrasive cutting element therethrough, enclosed in an enclosure that restricts rotation of the superabrasive cutting element, or combinations of the foregoing. Additionally, some embodiments relate to cutting element assemblies in which a superabrasive cutting element is mechanically fastened to a base, such as a substrate or directly to a bit body of a rotary drill bit. Some embodiments also relate to cutting element assemblies including one or more superabrasive cutting elements that are rotatable about a longitudinal axis of the cutting element assembly, that may be axially compressed to enhance the damage tolerance thereof, that may be enclosed in an enclosure that exposes the superabrasive cutting element therethrough, or combinations thereof.
摘要:
Embodiments of the invention relate to polycrystalline diamond (“PCD”) exhibiting enhanced diamond-to-diamond bonding. In an embodiment, PCD includes a plurality of diamond grains defining a plurality of interstitial regions. A metal-solvent catalyst occupies at least a portion of the plurality of interstitial regions. The plurality of diamond grains and the metal-solvent catalyst collectively exhibit a coercivity of about 115 Oersteads (“Oe”) or more and a specific magnetic saturation of about 15 Gauss·cm3/grams (“G·cm3/g”) or less. Other embodiments are directed to polycrystalline diamond compacts (“PDCs”) employing such PCD, methods of forming PCD and PDCs, and various applications for such PCD and PDCs in rotary drill bits, bearing apparatuses, and wire-drawing dies.
摘要:
Embodiments of the invention relate to polycrystalline diamond (“PCD”) exhibiting enhanced diamond-to-diamond bonding. In an embodiment, PCD includes a plurality of diamond grains defining a plurality of interstitial regions. A metal-solvent catalyst occupies at least a portion of the plurality of interstitial regions. The plurality of diamond grains and the metal-solvent catalyst collectively exhibit a coercivity of about 115 Oersteads or more and a specific magnetic saturation of about 15 Gauss·cm3/grams or less. Other embodiments are directed to polycrystalline diamond compacts (“PDCs”) employing such PCD, methods of forming PCD and PDCs, and various applications for such PCD and PDCs in rotary drill bits, bearing apparatuses, and wire-drawing dies.
摘要:
Embodiments of the invention relate to polycrystalline diamond (“PCD”) exhibiting enhanced diamond-to-diamond bonding. In an embodiment, PCD includes a plurality of diamond grains defining a plurality of interstitial regions. A metal-solvent catalyst occupies at least a portion of the plurality of interstitial regions. The plurality of diamond grains and the metal-solvent catalyst collectively exhibit a coercivity of about 115 Oersteads or more and a specific magnetic saturation of about 15 Gauss·cm3/grams or less. Other embodiments are directed to polycrystalline diamond compacts (“PDCs”) employing such PCD, methods of forming PCD and PDCs, and various applications for such PCD and PDCs in rotary drill bits, bearing apparatuses, and wire-drawing dies.
摘要:
Embodiments of the invention relate to polycrystalline diamond (“PCD”) exhibiting enhanced diamond-to-diamond bonding. In an embodiment, PCD includes a plurality of diamond grains defining a plurality of interstitial regions. A metal-solvent catalyst occupies at least a portion of the plurality of interstitial regions. The plurality of diamond grains and the metal-solvent catalyst collectively exhibit a coercivity of about 115 Oersteads (“Oe”) or more and a specific magnetic saturation of about 15 Gauss·cm3/grams (“G·cm3/g”) or less. Other embodiments are directed to polycrystalline diamond compacts (“PDCs”) employing such PCD, methods of forming PCD and PDCs, and various applications for such PCD and PDCs in rotary drill bits, bearing apparatuses, and wire-drawing dies.
摘要:
Embodiments of the invention relate to polycrystalline diamond (“PCD”) exhibiting enhanced diamond-to-diamond bonding. In an embodiment, PCD includes a plurality of diamond grains defining a plurality of interstitial regions. A metal-solvent catalyst occupies at least a portion of the plurality of interstitial regions. The plurality of diamond grains and the metal-solvent catalyst collectively exhibit a coercivity of about 115 Oersteads (“Oe”) or more and a specific magnetic saturation of about 15 Gauss·cm3/grams (“G·cm3/g”) or less. Other embodiments are directed to polycrystalline diamond compacts (“PDCs”) employing such PCD, methods of forming PCD and PDCs, and various applications for such PCD and PDCs in rotary drill bits, bearing apparatuses, and wire-drawing dies.
摘要:
Embodiments of the present invention relate to diamond-silicon carbide composites, superabrasive compacts including such diamond-silicon carbide composites, and methods of fabricating such diamond-silicon carbide composites and superabrasive compacts. In one embodiment, a superabrasive compact includes a substrate and a superabrasive table bonded to the substrate. The superabrasive table comprises diamond-silicon carbide composite including a matrix comprising nanometer-sized silicon carbide grains and micrometer-sized diamond grains dispersed through the matrix. In another embodiment, a method of fabricating a superabrasive compact is disclosed. An assembly comprising a mixture including diamond particles and silicon is formed. The silicon comprises amorphous silicon, crystalline silicon crystallized from amorphous silicon formed by a milling process, or combinations thereof. A substrate is positioned in proximity to the mixture. The assembly is subjected to heat and pressure to form a superabrasive compact comprising a superabrasive table bonded to the substrate. The superabrasive table comprises diamond-silicon carbide composite including diamond grains dispersed through a matrix of silicon carbide grains.
摘要:
Embodiments relate to superabrasive compacts including a diamond-silicon carbide composite table, and methods of fabricating such superabrasive compacts. In an embodiment, a method of fabricating a superabrasive compact is disclosed. An assembly comprising a mixture including diamond particles and silicon is formed. The silicon comprises amorphous silicon, crystalline silicon crystallized from amorphous silicon formed by a milling process, or combinations thereof. A substrate is positioned in proximity to the mixture. The assembly is subjected to a high-pressure/high-temperature process to form a superabrasive compact comprising a superabrasive table bonded to the substrate. The superabrasive table comprises diamond-silicon carbide composite including diamond grains dispersed through a matrix of silicon carbide grains.
摘要:
Embodiments relate to methods of fabricating PCD materials by subjecting a mixture that exhibits a broad diamond particle size distribution to a HPHT process, PCD materials so-formed, and PDCs including a polycrystalline diamond table comprising such PCD materials. In an embodiment, a method includes subjecting a mixture to heat and pressure sufficient to form a PCD material. The mixture comprises a plurality of diamond particles exhibiting a diamond particle size distribution characterized, in part, by a parameter θ that is less than about 1.0, where θ = x 6 · σ , x is the average particle size of the diamond particle size distribution, and σ is the standard deviation of the diamond particle size distribution. In an embodiment, the diamond particle size distribution can be generally modeled by the following equation: C P F T 100 = D n - D S n D L n - D S n , wherein CPFT is the cumulative percent finer than, D is diamond grain size, DL is the largest-sized diamond grain, DS is the smallest-sized diamond grain, and n is a distribution modulus.
摘要翻译:实施方案涉及通过使表现出宽金刚石粒度分布的混合物经历HPHT方法,所形成的PCD材料以及包括包含这种PCD材料的多晶金刚石台的PDC来制造PCD材料的方法。 在一个实施方案中,一种方法包括使混合物经受足以形成PCD材料的热和压力。 该混合物包括多个金刚石颗粒,其表现出部分地由参数和等级表征的金刚石颗粒尺寸分布; 小于约1.0,其中&thetas; = x 6·&sgr ,x是金刚石粒度分布的平均粒度,&sgr; 是金刚石粒度分布的标准偏差。 在一个实施方案中,金刚石粒度分布通常可以通过以下等式建模:CéP Phop F笨T 100 = D n -DS n DL n-DS n,其中,CPFT是比 D是金刚石粒度,DL是最大尺寸的金刚石晶粒,DS是最小尺寸的金刚石晶粒,n是分布模量。