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公开(公告)号：US5654034A
公开(公告)日：1997-08-05
申请号：US655717
申请日：1996-08-07
CPC分类号： G01K1/10 , Y10T428/13 , Y10T428/131 , Y10T428/22 , Y10T428/232 , Y10T428/239
摘要： A semiconductor protection tube is a ceramic tube with a layer of silicon carbide covering at least a portion of the tube adjacent an open front end of the tube and extending forward of the open end to form a hollow, closed-end tip. The protection tube is formed by providing the ceramic tube, inserting a mandrel through the tube to extend forward of the front end, and depositing silicon carbide by chemical vapor deposition over at least a front portion of the ceramic tube and over the forward-extending portion of the mandrel. Subsequent removal of the mandrel completes the production of the protection tube.
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公开(公告)号：US5618594A
公开(公告)日：1997-04-08
申请号：US421177
申请日：1995-04-13
CPC分类号： G01K1/10 , Y10T428/13 , Y10T428/131 , Y10T428/22 , Y10T428/232 , Y10T428/239
摘要： A semiconductor protection tube is a ceramic tube with a layer of silicon carbide covering at least a portion of the tube adjacent an open front end of the tube and extending forward of the open end to form a hollow, closed-end tip. The protection tube is formed by providing the ceramic tube, inserting a mandrel through the tube to extend forward of the front end, and depositing silicon carbide by chemical vapor deposition over at least a front portion of the ceramic tube and over the forward-extending portion of the mandrel. Subsequent removal of the mandrel completes the production of the protection tube.
摘要翻译： 半导体保护管是陶瓷管，其具有覆盖管的至少一部分的碳化硅层，邻近管的开放前端并且在开口端的前方延伸以形成中空的封闭端尖端。 保护管是通过提供陶瓷管，通过管插入心轴以向前延伸的方式形成的，并且通过化学气相沉积在至少陶瓷管的前部上并在前延伸部分之上沉积碳化硅 的心轴。 随后的心轴移除完成了保护管的生产。
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公开(公告)号：US5102694A
公开(公告)日：1992-04-07
申请号：US588788
申请日：1990-09-27
申请人： Raymond L. Taylor , Hemant D. Desai
发明人： Raymond L. Taylor , Hemant D. Desai
IPC分类号： C23C16/30 , C23C16/44 , C23C16/455 , G02B1/00
CPC分类号： C23C16/45523 , C23C16/306 , G02B1/00
摘要： Periodic pulsing of the gaseous reactant flows during chemical vapor deposition of gradient index optical material markedly improves the refractive index homogeneity of the deposit with the frequency of the pulsing being variable over a wide range but the number and size of the inhomogeneities, or nodules, being significantly reduced at higher pulsing frequencies.
摘要翻译： 梯度折射率光学材料的化学气相沉积期间气态反应物的周期性脉冲流动显着改善了沉积物的折射率均匀性，脉冲频率在宽范围内是可变的，但是不均匀性或结节的数量和大小是 在更高的脉冲频率下显着降低。
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公开(公告)号：US5741445A
公开(公告)日：1998-04-21
申请号：US596021
申请日：1996-02-06
CPC分类号： H01Q15/141 , G02B5/08
摘要： A method of forming a light weight, closed-back mirror. The mirror is formed as a monolithic construction by the use of chemical vapor deposition techniques. A first deposition forms sheets of the material, which are machined to the proper size to form reinforcing ribs. A sacrificial mandrel is formed with grooves to receive the ribs in their assembled positions. The upper surface of the mandrel is in proximity to the rear edges of the ribs to form a substantially continuous surface. The mandrel and ribs are then subjected to a chemical vapor deposition process which forms a first coating upon the outer face of the mandrel, forming a back plate and side wall. The mandrel is then turned over, and the base is removed by machining to expose the front edges of the ribs. This process leaves islands of mandrel material between the ribs to form a substantially continuous surface. The mandrel and ribs are then subjected to a chemical vapor deposition process. This forms a second coating upon the lower surface of the mandrel, used as the mirror face. To reduce weight, holes are drilled through the back plate, and the remaining, encapsulated, mandrel material is removed by oxidation.
摘要翻译： 一种形成轻质封闭式后视镜的方法。 反射镜通过使用化学气相沉积技术形成为整体结构。 首先沉积形成材料片材，其被加工成适当的尺寸以形成加强肋。 牺牲心轴形成有凹槽以在其组装位置接收肋。 心轴的上表面靠近肋的后边缘以形成基本连续的表面。 然后将心轴和肋条进行化学气相沉积工艺，其在心轴的外表面上形成第一涂层，形成背板和侧壁。 然后将心轴翻转，并且通过机械加工去除基底以露出肋的前边缘。 该工艺在肋之间留下芯棒材料岛以形成基本连续的表面。 然后对心轴和肋进行化学气相沉积工艺。 这在心轴的下表面上形成第二涂层，用作镜面。 为了减轻重量，通过后板钻出孔，并且通过氧化除去剩余的封装的心轴材料。
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公开(公告)号：US5476549A
公开(公告)日：1995-12-19
申请号：US393770
申请日：1995-02-24
IPC分类号： C23C16/02 , C23C16/30 , C23C16/458 , C23C16/00
CPC分类号： C23C16/306 , C23C16/0254 , C23C16/4581
摘要： The surface of a zinc selenide substrate is ground to curve in the opposite direction from that which occurs due to the bimetallic effect when zinc sulfide is deposited on a flat substrate by the chemical vapor deposition process. The bowing of the interface that occurs upon cooling of the hot laminate when the surface of the substrate is flat before deposition is compensated for by the pre-figured bowing. A distortion free window for the transmission of infra-red radiation is provided by this invention.
摘要翻译： 当硫化锌通过化学气相沉积工艺沉积在平坦的衬底上时，由于双金属效应，将硒化锌衬底的表面研磨成与发生相反的方向的曲线。 当在沉积之前衬底的表面平坦时，在热层压体冷却时发生的界面弯曲由预先弯曲的弯曲补偿。 本发明提供了用于传输红外辐射的无失真窗口。
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6.发明授权Chemical vapor deposition-produced silicon carbide having improved properties 失效化学气相沉积生产的具有改进性能的碳化硅
公开(公告)号：US5612132A
公开(公告)日：1997-03-18
申请号：US455007
申请日：1995-05-31
IPC分类号： C01B31/36 , B28B1/30 , C04B35/565 , C04B35/571 , C23C16/01 , C23C16/32 , C23C16/44
CPC分类号： C04B35/571 , C23C16/01 , C23C16/325 , C23C16/4404 , Y10S438/931 , Y10T428/26
摘要： .beta.-silicon carbide which is optically transmitting in the visible and infrared regions is produced by chemical vapor deposition. Deposition conditions are temperatures within a 1400.degree.-1500.degree. C. range, pressure 50 torr or less, H.sub.2 /methyltrichlorosilane molar ratios of 4-30 and a deposition rate of 1 .mu.m or less.
摘要翻译： 通过化学气相沉积制造在可见光和红外区域中透光的β-碳化硅。 沉积条件是温度在1400°-1500℃范围内，压力50托或更低，H 2 /甲基三氯硅烷摩尔比为4-30，沉积速率为1μm或更小。
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公开(公告)号：US5183689A
公开(公告)日：1993-02-02
申请号：US729980
申请日：1991-07-15
CPC分类号： C23C16/0254 , C23C16/306 , C23C16/4581
摘要： The surface of a zinc selenide substrate is ground to curve in the opposite direction from that which occurs due to the bimetallic effect when zinc sulfide is deposited on a flat substrate by the chemical vapor deposition process. The bowing of the interface that occurs upon cooling of the hot laminate when the surface of the substrate is flat before deposition is compensated for by the pre-figured bowing. A distortion free window for the transmission of infra-red radiation is provided by this invention.
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公开(公告)号：US5686195A
公开(公告)日：1997-11-11
申请号：US378030
申请日：1995-01-24
CPC分类号： C23C16/0254 , C23C16/306 , C23C16/4581
摘要： The surface of a zinc selenide substrate is ground to curve in the opposite direction from that which occurs due to the bimetallic effect when zinc sulfide is deposited on a flat substrate by the chemical vapor deposition process. The bowing of the interface that occurs upon cooling of the hot laminate when the surface of the substrate is flat before deposition is compensated for by the pre-figured bowing. A distortion free window for the transmission of infra-red radiation is provided by this invention.
摘要翻译： 当硫化锌通过化学气相沉积工艺沉积在平坦的衬底上时，由于双金属效应，将硒化锌衬底的表面研磨成与发生相反的方向的曲线。 当在沉积之前衬底的表面平坦时，在热层压体冷却时发生的界面弯曲由预先弯曲的弯曲补偿。 本发明提供了用于传输红外辐射的无失真窗口。
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公开(公告)号：US5604151A
公开(公告)日：1997-02-18
申请号：US439034
申请日：1995-05-11
IPC分类号： C01B31/36 , B28B1/30 , C04B35/565 , C04B35/571 , C23C16/01 , C23C16/32 , C23C16/44 , H01L21/20
CPC分类号： C04B35/571 , C23C16/01 , C23C16/325 , C23C16/4404 , Y10S438/931 , Y10T428/26
摘要： .beta.-silicon carbide which is optically transmitting in the visible and infrared regions is produced by chemical vapor deposition. Deposition conditions are temperatures within a 1400.degree.-1500.degree. C. range, pressure 50 torr or less, H.sub.2 /methyltrichlorosilane molar ratios of 4-30 and a deposition rate of 1 .mu.m or less.
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10.发明授权Chemical vapor deposition process to replicate the finish and figure of preshaped structures 失效化学气相沉积工艺来复制预成型结构的表面和形状
公开(公告)号：US4997678A
公开(公告)日：1991-03-05
申请号：US425076
申请日：1989-10-23
CPC分类号： C23C16/325 , C23C16/01 , C23C16/26
摘要： A process is disclosed by which the finish and figure of polished preshaped structures (such as mirrors) can be replicated directly by chemical vapor deposition, with only minor polishing of the replica being required to obtain a final product, and with the original substrate being reusable for further replication. Relevant conditions under which the process can be carried out are given. Featured in the process is a pretreatment step prior to the deposition of a layer of silicon carbide to form the replica, which pretreatment step involves the formation on the polished substrate of an oxide layer and a carbon layer of high finish and uniform thickness. The carbon layer allows easy separation of the substrate and replica which otherwise would be bound together.
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