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公开(公告)号：US07418644B2
公开(公告)日：2008-08-26
申请号：US10790360
申请日：2004-03-01
IPC分类号： H03M13/29
CPC分类号： H03M13/3761 , H03M13/09 , H03M13/1515 , H03M13/19 , H03M13/23 , H03M13/3707
摘要： A system for error correction coding and decoding information is disclosed. In one embodiment, the first and second encoders are each configured to encode the information, wherein the second encoder has a higher capability than the first encoder. First and second decoders are configured to recover the information, wherein the second decoder recovers the information encoded by the second encoder only if the first decoder cannot recover the information.
摘要翻译： 公开了一种用于纠错编码和解码信息的系统。 在一个实施例中，第一和第二编码器各自被配置为对信息进行编码，其中第二编码器具有比第一编码器更高的能力。 第一和第二解码器被配置为恢复信息，其中第二解码器仅在第一解码器不能恢复信息时才恢复由第二编码器编码的信息。
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2.发明授权Assisted memory device for reading and writing single and multiple units of data 有权辅助存储设备用于读写单个和多个单元的数据公开(公告)号：US07149950B2
公开(公告)日：2006-12-12
申请号：US10661937
申请日：2003-09-12
IPC分类号： G11C29/00
CPC分类号： G06F13/16 , G06F11/076 , G06F11/1008
摘要： A device comprises a memory array in which a plurality of codewords is stored. Each codeword comprises an error correction code and a data block that comprises a plurality of units of data. The device further comprises an error code correction module coupled to the memory array. When multiple units of data are to be read from the device for an address, a codeword stored in a location associated with the address is fetched from the memory array, the error code correction module decodes the codeword and corrects any errors in the data block for that codeword, and the multiple units of data are read from the corrected data block.
摘要翻译： 一种设备包括其中存储多个码字的存储器阵列。 每个码字包括纠错码和包括多个数据单元的数据块。 该设备还包括耦合到存储器阵列的错误代码校正模块。 当从设备读取地址的多个单元数据时，存储在与地址相关联的位置的代码字从存储器阵列中取出，错误代码校正模块解码码字并且校正数据块中的任何错误 从校正的数据块中读取该码字和多个数据单元。
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公开(公告)号：US07191379B2
公开(公告)日：2007-03-13
申请号：US10659630
申请日：2003-09-10
CPC分类号： G11C11/15 , G06F11/1008 , G06F2211/109
摘要： Embodiments of the present invention are implemented in memory systems. In one embodiment, the memory comprises an array of memory cells and a control circuit. The control circuit is configured to read error correction coded data from the array of memory cells, provide error correction code decoding to selected error correction coded data and discard unused error correction code parity data of unselected error correction coded data.
摘要翻译： 本发明的实施例在存储器系统中实现。 在一个实施例中，存储器包括存储器单元阵列和控制电路。 控制电路被配置为从存储器单元阵列读取纠错编码数据，向所选择的纠错编码数据提供纠错码解码，并丢弃未选择的纠错编码数据的未使用的纠错码奇偶校验数据。
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公开(公告)号：US07079436B2
公开(公告)日：2006-07-18
申请号：US10675740
申请日：2003-09-30
IPC分类号： G11C7/02
CPC分类号： G11C29/02 , G11C7/02 , G11C11/1673 , G11C29/026 , G11C29/028 , G11C2207/2254
摘要： Embodiments of the present invention provide a resistive cross point memory. The resistive cross point memory comprises an array of memory cells and a read circuit. The read circuit is configured to sense a resistance through a memory cell in the array of memory cells to obtain a sense result and calibrate the read circuit based on the sensed result. The read circuit comprises an up/down counter that provides a calibration value to the read circuit.
摘要翻译： 本发明的实施例提供一种电阻式交叉点存储器。 电阻交叉点存储器包括存储器单元阵列和读取电路。 读取电路被配置为感测通过存储器单元阵列中的存储器单元的电阻以获得感测结果，并且基于感测结果来校准读取电路。 读取电路包括向读取电路提供校准值的向上/向下计数器。
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5.发明授权Magnetic memory devices having selective error encoding capability based on fault probabilities 有权具有基于故障概率的选择性错误编码能力的磁存储器件公开(公告)号：US07325157B2
公开(公告)日：2008-01-29
申请号：US10700203
申请日：2003-11-03
申请人： Robert Sesek , Terrel Munden , Kenneth Kay Smith , Dave McIntyre , Stewart Wyatt
发明人： Robert Sesek , Terrel Munden , Kenneth Kay Smith , Dave McIntyre , Stewart Wyatt
IPC分类号： G06F11/00
CPC分类号： G06F11/1008 , G06F2211/109 , G11C7/1006 , G11C11/16 , G11C2207/104
摘要： Embodiments of the present invention provide a magnetic memory. In one embodiment, the magnetic memory comprises an array of memory cells and a control circuit. The control circuit is configured to receive data, sort the received data to obtain unchanged data and ECC encoded data, and store the unchanged data and the ECC encoded data in the array of memory cells.
摘要翻译： 本发明的实施例提供一种磁存储器。 在一个实施例中，磁存储器包括存储器单元阵列和控制电路。 控制电路被配置为接收数据，对接收到的数据进行分类以获得未改变的数据和ECC编码数据，并将未改变的数据和ECC编码的数据存储在存储器单元阵列中。
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公开(公告)号：US06873543B2
公开(公告)日：2005-03-29
申请号：US10448574
申请日：2003-05-30
申请人： Kenneth Kay Smith , Andrew VanBrocklin , Peter Fricke , Frederick A. Perner , Kenneth James Eldredge
发明人： Kenneth Kay Smith , Andrew VanBrocklin , Peter Fricke , Frederick A. Perner , Kenneth James Eldredge
CPC分类号： G11C29/026 , G11C11/16 , G11C29/028 , G11C29/50
摘要： Embodiments of the present invention provide a memory device. In one embodiment, the memory device comprises an array of memory cells configured to provide resistive states, a read circuit configured to sense the resistive states and a resistor. The resistor is configured to provide a resistance to the read circuit that is configured to select the resistor and sense the resistance to test the read circuit.
摘要翻译： 本发明的实施例提供一种存储装置。 在一个实施例中，存储器件包括被配置为提供电阻状态的存储器单元的阵列，被配置为感测电阻状态的读取电路和电阻器。 电阻器被配置为提供对被配置为选择电阻器并且感测电阻以测试读取电路的读取电路的电阻。
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7.发明授权Magnetic memory which detects changes between first and second resistive states of memory cell 有权磁存储器，用于检测存储器单元的第一和第二电阻状态之间的变化公开(公告)号：US06847544B1
公开(公告)日：2005-01-25
申请号：US10689144
申请日：2003-10-20
CPC分类号： G11C11/14
摘要： A magnetic memory which detects changes between resistive states of a memory cell is disclosed. In one embodiment the magnetic memory includes a memory cell which has first and second resistive states. First and second write conductors are configured to conduct first and second currents to change the memory cell between the first and the second resistive states. The first and the second write conductors are routed in first and second directions and intersect the memory cell. First and second sense conductors are configured to conduct a sense current through the memory cell. A sense circuit coupled to the second sense conductor is configured to detect the change between the first and the second resistive states.
摘要翻译： 公开了一种用于检测存储器单元的电阻状态之间的变化的磁存储器。 在一个实施例中，磁存储器包括具有第一和第二电阻状态的存储单元。 第一和第二写入导体被配置为传导第一和第二电流以改变第一和第二电阻状态之间的存储单元。 第一和第二写导体在第一和第二方向上布线，并与存储单元相交。 第一和第二感测导体被配置为通过存储器单元传导感测电流。 耦合到第二感测导体的感测电路被配置为检测第一和第二电阻状态之间的变化。
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公开(公告)号：US20110110584A1
公开(公告)日：2011-05-12
申请号：US12614517
申请日：2009-11-09
申请人： Peter Majewicz , Kenneth Kay Smith
发明人： Peter Majewicz , Kenneth Kay Smith
CPC分类号： H04N9/045 , H04N5/2355
摘要： A method and apparatus for converting a color digital image into a grayscale digital image is disclosed. First, each green intensity value in the color digital image is copied into a corresponding pixel location of the grayscale digital image. Then for each red intensity value in the color digital image, the red intensity value is adjusted to match a local dynamic range of green intensity values. The adjusted red intensity value is inserted into the corresponding pixel location of the grayscale digital image. Then for each blue intensity value in the color image, the blue intensity value is adjusted to match a local dynamic range of green intensity values. The adjusted blue intensity value is inserted into the corresponding pixel location of the grayscale digital image.
摘要翻译： 公开了一种用于将彩色数字图像转换成灰度数字图像的方法和装置。 首先，将彩色数字图像中的每个绿色强度值复制到灰度数字图像的相应像素位置。 然后，对于彩色数字图像中的每个红色强度值，调整红色强度值以匹配绿色强度值的局部动态范围。 将调整后的红色强度值插入到灰度数字图像的相应像素位置。 然后对于彩色图像中的每个蓝色强度值，调整蓝色强度值以匹配绿色强度值的局部动态范围。 将经调整的蓝色强度值插入灰度数字图像的对应像素位置。
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公开(公告)号：US06842364B1
公开(公告)日：2005-01-11
申请号：US10614505
申请日：2003-07-07
CPC分类号： G11C11/16
摘要： A method for performing a read operation from a memory cell in a memory cell is provided. The method includes applying a constant current across the memory cell string, measuring a first voltage across the memory cell string, writing the memory cell to a first state, measuring a second voltage across the memory cell string, and determining whether the first voltage differs from the second voltage.
摘要翻译： 提供了一种用于从存储单元中的存储单元执行读取操作的方法。 该方法包括在存储单元串中施加恒定电流，测量存储单元串两端的第一电压，将存储单元写入第一状态，测量存储单元串两端的第二电压，以及确定第一电压是否与 第二电压。
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10.发明授权Magnetic memory equipped with a read control circuit and an output control circuit 有权磁记忆体配有读控制电路和输出控制电路公开(公告)号：US06829191B1
公开(公告)日：2004-12-07
申请号：US10726393
申请日：2003-12-03
IPC分类号： G11C700
CPC分类号： G11C11/16
摘要： A magnetic memory is disclosed. In one embodiment, the magnetic memory includes first and second memory cells and a read controller coupled to the first and second memory cells. An output controller coupled to the read controller and to the first and second memory cells, wherein the output controller is configured to receive read data in parallel only from the first or second memory cells which have completed the current read operation regardless of whether both the first and second memory cells have completed the current read operation and convert the parallel data to serial data and shift the parallel data to an output in synchronism with the system clock signal.
摘要翻译： 公开了磁存储器。 在一个实施例中，磁存储器包括耦合到第一和第二存储器单元的第一和第二存储器单元和读取控制器。 耦合到读控制器和第一和第二存储器单元的输出控制器，其中输出控制器被配置为仅从已完成当前读操作的第一或第二存储器单元并行地接收读数据，而不管第一 并且第二存储单元已经完成当前的读取操作，并且将并行数据转换成串行数据，并且将并行数据与系统时钟信号同步地移位到输出端。
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