摘要:
Embodiments of the present invention are implemented in memory systems. In one embodiment, the memory comprises an array of memory cells and a control circuit. The control circuit is configured to read error correction coded data from the array of memory cells, provide error correction code decoding to selected error correction coded data and discard unused error correction code parity data of unselected error correction coded data.
摘要:
A system for error correction coding and decoding information is disclosed. In one embodiment, the first and second encoders are each configured to encode the information, wherein the second encoder has a higher capability than the first encoder. First and second decoders are configured to recover the information, wherein the second decoder recovers the information encoded by the second encoder only if the first decoder cannot recover the information.
摘要:
A device comprises a memory array in which a plurality of codewords is stored. Each codeword comprises an error correction code and a data block that comprises a plurality of units of data. The device further comprises an error code correction module coupled to the memory array. When multiple units of data are to be read from the device for an address, a codeword stored in a location associated with the address is fetched from the memory array, the error code correction module decodes the codeword and corrects any errors in the data block for that codeword, and the multiple units of data are read from the corrected data block.
摘要:
A fault-tolerant magnetoresistive solid-state storage device (MRAM) in use performs error correction coding and decoding of stored information, to tolerate physical defects. At manufacture, the MRAN device is tested to confirm that each set of storage cells is suitable for storing ECC encoded data, using either a parametric evaluation (step 602), or a logical evaluation (step 603) or preferably a combination of both. Failed cells are identified and a count is formed, suitably in terms of ECC symbols 206 that would be affected by such failed cells (step 604). The count can be compared to a threshold (step 605) to determine suitability of the accessed storage cells and a decision made (step 606) on whether to continue with use of those cells, or whether to take remedial action.
摘要:
Systems and methods for controlling communication with nonvolatile memory devices via a memory bus are provided. Briefly described, one of many possible embodiments is a system comprising a memory controller in communication with a memory bus, the memory controller configured to control communication with at least one nonvolatile memory device by configuring the at least one nonvolatile memory device, via the memory bus, with a unique device identifier.
摘要:
Systems and methods for transferring data between a host device and a storage medium are provided. In one implementation, a system for transferring data between a host device and a storage medium includes a host interface that receives from the host device a command to transfer data between the host device and the storage medium, a buffer that temporarily stores data that is transferred between the host device and the storage medium, a first register that stores a value for tracking a number of data units that have been transferred into the buffer but that have not yet been transferred out of the buffer, a second register that stores a value for incrementing a value contained in the first register, and a third register that stores a value for decrementing a value contained in the first register.
摘要:
The present invention relates to a storage device controller for controlling the operations of the data storage system. The controller includes error-correcting code (ECC) coding and decoding of data stored on media of the data storage system. A Verify procedure of the present invention is performed which verifies the validity of the data written to the media. The Verify procedure runs continuously until an error is detected or until an external event terminates the procedure. By accessing a range of memory addresses in the media and by resetting an address counter to a start of the range of addresses after a last address of the range has been accessed, the Verify procedure continuously checks the memory locations for errors. The range of addresses may include all of the accessible addresses in the data storage device. Additionally, information on the quality of the media may be collected and used to determine how much the media deteriorates over time. Sparing of defective memory locations may also be provided, even after manufacturing and packaging of the data storage system.
摘要:
Byte-swapping in a buffer memory system utilizes a byte-swapping register to avoid wasteful unused buffer memory spaces that may result from a data transfer of partial word data, i.e., bytes of data less than the number of bytes in a word, to the buffer memory. When a data transfer request, e.g., a write request, requires a transfer of a partial word, the partial request is written to a word in the buffer memory, and is also stored in the byte-swapping register. In a subsequent data transfer request, the partial word stored in the byte-swapping register is combined and concatenated with sufficient bytes of data of the subsequent data transfer request to produce a complete word. The complete word is written in the word in the buffer memory, replacing the previously stored partial word, and thus fills the previously unused buffer memory space.
摘要:
A system comprises a storage controller for managing transfers of data between a host and storage memory; a data mover coupled to the storage controller handling data transferred between a host and storage memory; and a buffer coupled to the data mover for storing data being transferred. The storage controller modifies operation of the storage system based on status of the data transfer. An associate method comprises transferring data between a host and storage memory via a storage system, and dynamically adjusting operation of the storage system depending on status of the data transfer.
摘要:
A data storage device that includes a memory cell string. The memory cell string includes a first memory cell and a second memory cell. The device also includes a circuit coupled to a node between the first memory cell and a second memory cell. The circuit is configured to detect a voltage change at the node in response to a voltage being provided to the memory cell string and the first memory cell being written to a first state.