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公开(公告)号：US20100258184A1
公开(公告)日：2010-10-14
申请号：US12756416
申请日：2010-04-08
IPC分类号： H01B1/02 , H01B1/00 , H01B1/06 , H01L31/0216
CPC分类号： C03C8/06 , C03C3/064 , H01B1/22 , H01L31/022425 , H01L31/028 , H01L31/03682 , H01L31/03685 , Y02E10/50
摘要： The invention relates to glass compositions useful in conductive pastes for silicon semiconductor devices and photovoltaic cells.
摘要翻译： 本发明涉及可用于硅半导体器件和光伏电池的导电浆料中的玻璃组合物。
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公开(公告)号：US20100258166A1
公开(公告)日：2010-10-14
申请号：US12756423
申请日：2010-04-08
IPC分类号： H01L31/0224 , H01B1/02 , H01B1/22 , H01L21/283 , H01L29/43
摘要： The invention relates to glass compositions useful in conductive pastes for silicon semiconductor devices and photovoltaic cells.
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3.发明授权公开(公告)号：US08552558B2
公开(公告)日：2013-10-08
申请号：US12254189
申请日：2008-10-20
IPC分类号： H01L29/45 , H01L31/0224
CPC分类号： H01B1/16 , C03C8/10 , C03C8/12 , C03C8/18 , H01B1/22 , H01L31/022425 , H05K1/092 , Y02E10/50
摘要： The present invention is directed to a thick film conductive composition comprising: (a) electrically conductive silver powder; (c) fluorine-containing glass frit; dispersed in (d) organic vehicle and devices made therefrom.
摘要翻译： 本发明涉及一种厚膜导电组合物，其包含：（a）导电银粉; （c）含氟玻璃料; 分散在（d）有机载体和由其制成的装置中。
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公开(公告)号：US20120312372A1
公开(公告)日：2012-12-13
申请号：US13592497
申请日：2012-08-23
申请人： Alan Frederick Carroll , Kenneth Warren Hang , Brian J. Laughlin , Zhigang Rick Li , Hisashi Matsuno , Yueli Wang
发明人： Alan Frederick Carroll , Kenneth Warren Hang , Brian J. Laughlin , Zhigang Rick Li , Hisashi Matsuno , Yueli Wang
IPC分类号： H01B1/22 , H01L31/0224 , H01L23/48 , H01B1/20 , H01L21/283
CPC分类号： C03C3/07 , C03C8/12 , C03C8/18 , H01B1/16 , H01L31/022408 , H01L31/022425 , H01L2924/0002 , Y02E10/50 , H01L2924/00
摘要： The invention relates to zinc-containing glass compositions useful in conductive pastes for silicon semiconductor devices and photovoltaic cells.
摘要翻译： 本发明涉及用于硅半导体器件和光伏电池的导电浆料中的含锌玻璃组合物。
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公开(公告)号：US08262944B2
公开(公告)日：2012-09-11
申请号：US12819316
申请日：2010-06-21
申请人： Alan Frederick Carroll , Kenneth Warren Hang , Brian J. Laughlin , Zhigang Rick Li , Hisashi Matsuno , Yueli Wang
发明人： Alan Frederick Carroll , Kenneth Warren Hang , Brian J. Laughlin , Zhigang Rick Li , Hisashi Matsuno , Yueli Wang
IPC分类号： H01B1/22 , B05D5/12 , H01L31/0224
CPC分类号： C03C3/07 , C03C8/12 , C03C8/18 , H01B1/16 , H01L31/022408 , H01L31/022425 , H01L2924/0002 , Y02E10/50 , H01L2924/00
摘要： The invention relates to zinc-containing glass compositions useful in conductive pastes for silicon semiconductor devices and photovoltaic cells.
摘要翻译： 本发明涉及用于硅半导体器件和光伏电池的导电浆料中的含锌玻璃组合物。
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公开(公告)号：US20110147677A1
公开(公告)日：2011-06-23
申请号：US12819316
申请日：2010-06-21
申请人： Alan Frederick Carroll , Kenneth Warren Hang , Brian J. Laughlin , Zhigang Rick Li , Hisashi Matsuno , Yueli Wang
发明人： Alan Frederick Carroll , Kenneth Warren Hang , Brian J. Laughlin , Zhigang Rick Li , Hisashi Matsuno , Yueli Wang
CPC分类号： C03C3/07 , C03C8/12 , C03C8/18 , H01B1/16 , H01L31/022408 , H01L31/022425 , H01L2924/0002 , Y02E10/50 , H01L2924/00
摘要： The invention relates to zinc-containing glass compositions useful in conductive pastes for silicon semiconductor devices and photovoltaic cells.
摘要翻译： 本发明涉及用于硅半导体器件和光伏电池的导电浆料中的含锌玻璃组合物。
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公开(公告)号：US20100258165A1
公开(公告)日：2010-10-14
申请号：US12756419
申请日：2010-04-08
IPC分类号： H01L31/0224 , H01B1/02 , H01B1/22 , H01L21/283 , H01L29/43
CPC分类号： C03C3/062 , C03C3/066 , C03C8/06 , H01B1/16 , H01L21/2225 , H01L31/022425 , Y02E10/50
摘要： The invention relates to glass compositions useful in conductive pastes for silicon semiconductor devices and photovoltaic cells.
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公开(公告)号：US08394297B2
公开(公告)日：2013-03-12
申请号：US13042770
申请日：2011-03-08
IPC分类号： H01B1/24 , B05D5/12 , H01L31/0224
CPC分类号： H01B1/22 , C03C3/064 , C03C3/072 , C03C3/0745 , C03C8/10 , C03C8/12 , C03C8/14 , C03C8/16 , C03C8/18 , C03C8/20 , C03C14/006 , C03C2214/08 , C03C2214/16 , H01L31/022425 , H05K1/092 , Y02E10/50
摘要： The present invention is directed to a thick film conductive composition comprising: (a) electrically conductive silver powder; (b) Zn-containing additive wherein the particle size of said zinc-containing additive is in the range of 7 nanometers to less than 100 nanometers; (c) glass frit wherein said glass frit has a softening point in the range of 300 to 600° C.; dispersed in (d) organic medium. The present invention is further directed to a semiconductor device and a method of manufacturing a semiconductor device from a structural element composed of a semiconductor having a p-n junction and an insulating film formed on a main surface of the semiconductor comprising the steps of (a) applying onto said insulating film the thick film composition as describe above; and (b) firing said semiconductor, insulating film and thick film composition to form an electrode.
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9.发明申请METHOD OF MANUFACTURE OF SEMICONDUCTOR DEVICE AND CONDUCTIVE COMPOSITIONS USED THEREIN 失效半导体器件制造方法及其使用的导电组合物公开(公告)号：US20110155240A1
公开(公告)日：2011-06-30
申请号：US13042770
申请日：2011-03-08
IPC分类号： H01L31/0224 , H01B1/22 , H01L21/283 , H01L29/45
CPC分类号： H01B1/22 , C03C3/064 , C03C3/072 , C03C3/0745 , C03C8/10 , C03C8/12 , C03C8/14 , C03C8/16 , C03C8/18 , C03C8/20 , C03C14/006 , C03C2214/08 , C03C2214/16 , H01L31/022425 , H05K1/092 , Y02E10/50
摘要： The present invention is directed to a thick film conductive composition comprising: (a) electrically conductive silver powder; (b) Zn-containing additive wherein the particle size of said zinc-containing additive is in the range of 7 nanometers to less than 100 nanometers; (c) glass frit wherein said glass frit has a softening point in the range of 300 to 600° C.; dispersed in (d) organic medium.The present invention is further directed to a semiconductor device and a method of manufacturing a semiconductor device from a structural element composed of a semiconductor having a p-n junction and an insulating film formed on a main surface of the semiconductor comprising the steps of (a) applying onto said insulating film the thick film composition as describe above; and (b) firing said semiconductor, insulating film and thick film composition to form an electrode.
摘要翻译： 本发明涉及一种厚膜导电组合物，其包含：（a）导电银粉; （b）含锌添加剂，其中所述含锌添加剂的粒度在7纳米至小于100纳米的范围内; （c）玻璃料，其中所述玻璃料的软化点在300-600℃的范围内。 分散在（d）有机介质中。 本发明还涉及一种由半导体构成的半导体器件和半导体器件的制造方法，所述结构元件由在半导体主表面上形成的具有pn结和绝缘膜的半导体构成，包括以下步骤：（a）施加 在上述绝缘膜上形成如上所述的厚膜组合物; 和（b）烧制所述半导体，绝缘膜和厚膜组合物以形成电极。
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公开(公告)号：US07462304B2
公开(公告)日：2008-12-09
申请号：US11106245
申请日：2005-04-14
IPC分类号： H01B1/22
CPC分类号： C03C8/20 , C03C3/064 , C03C3/072 , C03C3/0745 , C03C8/10 , C03C8/12 , C03C8/14 , C03C8/16 , C03C8/18 , C03C14/006 , C03C2214/08 , C03C2214/16 , H01B1/22 , H01L31/022425 , H05K1/092 , Y02E10/50 , Y10T428/24612 , Y10T428/31678
摘要： The present invention is directed to a thick film conductive composition comprising: (a) electrically conductive silver powder; (b) Mn-containing additive; (c) glass frit wherein said glass frit has a softening point in the range of 300 to 600° C.; dispersed in (d) organic medium.The present invention is further directed to a semiconductor device and a method of manufacturing a semiconductor device from a structural element composed of a semiconductor having a p-n junction and an insulating film formed on a main surface of the semiconductor comprising the steps of (a) applying onto said insulating film the thick film composition as describe above; and (b) firing said semiconductor, insulating film and thick film composition to form an electrode.
摘要翻译： 本发明涉及一种厚膜导电组合物，其包含：（a）导电银粉; （b）含Mn添加剂; （c）玻璃料，其中所述玻璃料的软化点在300-600℃的范围内。 分散在（d）有机介质中。 本发明还涉及一种由半导体构成的半导体器件和半导体器件的制造方法，所述结构元件由在半导体的主表面上形成的具有pn结和绝缘膜的半导体构成，包括以下步骤：（a）施加 在上述绝缘膜上形成如上所述的厚膜组合物; 和（b）烧制所述半导体，绝缘膜和厚膜组合物以形成电极。
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