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公开(公告)号：US06843132B2
公开(公告)日：2005-01-18
申请号：US10845196
申请日：2004-05-14
申请人： Kentaro Mizuno , Kouji Tsukada , Yoshiteru Omura , Shoji Hashimoto , Jiro Sakata
发明人： Kentaro Mizuno , Kouji Tsukada , Yoshiteru Omura , Shoji Hashimoto , Jiro Sakata
摘要： A pressure sensor is realized wherein output error of sensor element can be reduced even in the case where the pressure sensor is utilized in high temperature conditions. A pressure sensor is provided with a housing 20, a diaphragm 24 that partitions the interior and the exterior of the housing 20, a sensor element 54 provided within the housing 20, output value of the sensor element 54 varying in accordance with force exerted thereupon, and a force transmitting rod 52 provided within the housing, the force transmitting rod 52 moving downwardly when a pressure is exerted upon the diaphragm 24, the force transmitting rod 52 thereby exerting force upon the sensor element 54. The diaphragm 24 has a central region 26 contacting with the force transmitting rod 52, and a surrounding region 27 surrounding the periphery of the central region 26 and connecting the central region 26 with the housing 20. The surrounding region 27, viewed cross-sectionally along the radius, is V-shaped or U-shaped, and cancels thermal expansion.
摘要翻译： 实现了压力传感器，即使在高温条件下使用压力传感器的情况下也能够降低传感器元件的输出误差。 压力传感器设置有壳体20，隔离壳体20的内部和外部的隔膜24，设置在壳体20内的传感器元件54，传感器元件54的输出值根据施加在其上的力而变化， 以及设置在壳体内的力传递杆52，当施加压力施加到隔膜24上时，力传递杆52向下移动，力传递杆52从而对传感器元件54施加力。隔膜24具有中心区域26 与力传递杆52接触，以及围绕中心区域26的周边并将中心区域26与壳体20连接的周围区域27.沿着半径横截面地观察的周边区域27为V形或 U型，取消热膨胀。
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公开(公告)号：US06865953B2
公开(公告)日：2005-03-15
申请号：US10387461
申请日：2003-03-14
申请人： Kouji Tsukada , Jiro Sakata , Kentaro Mizuno , Yoshiteru Omura , Yumi Masuoka , Shoji Hashimoto
发明人： Kouji Tsukada , Jiro Sakata , Kentaro Mizuno , Yoshiteru Omura , Yumi Masuoka , Shoji Hashimoto
CPC分类号： G01L23/10 , G01L1/18 , G01L1/2262 , G01L9/0052
摘要： A pressure sensor has a housing having a first block and a second block provided therein. A force to be measured applies upon a upper face of the first block. An upper face of the second block makes contact with a base face of the first block. Piezoresistive elements are formed within the base face of the first block. The resistance values of these piezoresistive elements change as contacting pressure between the first block and the second block changes. A first electrode is formed on an upper face of the first block. A second electrode is formed on a base face of the second block. Electrical characteristics between the first electrode and the second electrode change following change in the contacting pressure between the first block and the second block.
摘要翻译： 压力传感器具有壳体，其具有设置在其中的第一块和第二块。 要测量的力应用于第一块的上表面。 第二块的上表面与第一块的基面接触。 压阻元件形成在第一块的基面内。 当第一块和第二块之间的接触压力改变时，这些压阻元件的电阻值改变。 第一电极形成在第一块的上表面上。 第二电极形成在第二块的基面上。 第一电极和第二电极之间的电特性随着第一块和第二块之间的接触压力的变化而改变。
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公开(公告)号：US07021154B2
公开(公告)日：2006-04-04
申请号：US10659294
申请日：2003-09-11
申请人： Shoji Hashimoto , Kouji Tsukada , Kentaro Mizuno , Jiro Sakata , Yoshiteru Omura , Yumi Masuoka
发明人： Shoji Hashimoto , Kouji Tsukada , Kentaro Mizuno , Jiro Sakata , Yoshiteru Omura , Yumi Masuoka
IPC分类号： G01B7/16
CPC分类号： G01L23/08
摘要： A force sensing element is provided with a gauge portion and a plurality of electrodes. The gauge portion is formed of an n-type semiconductor substrate whose (100)-face serves as a main face, a p-type semiconductor substrate whose (110)-face serves as a main face, or a p-type semiconductor substrate whose (111)-face serves as a main face, and is pressed in a thickness direction of the semiconductor substrate upon receiving a force. The electrodes are electrically connected to the gauge portion such that a current path extending in a direction corresponding to the thickness direction of the semiconductor substrate is formed in the gauge portion. The force sensing element thus constructed makes it possible to detect a force with high precision.
摘要翻译： 力感测元件设置有量规部分和多个电极。 仪表部分由（100）面用作主面的n型半导体衬底，（110）面用作主面的p型半导体衬底或p型半导体衬底形成，p型半导体衬底 （111）面用作主面，并且在接收到力时在半导体衬底的厚度方向上被按压。 电极与计量部电连接，使得在规格部分上形成与半导体基板的厚度方向对应的方向延伸的电流路径。 如此构造的力传感元件可以高精度地检测力。
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公开(公告)号：US06915702B2
公开(公告)日：2005-07-12
申请号：US10300617
申请日：2002-11-21
申请人： Yoshiteru Omura , Kentaro Mizuno , Kouji Tsukada , Jiro Sakata , Norio Fujitsuka
发明人： Yoshiteru Omura , Kentaro Mizuno , Kouji Tsukada , Jiro Sakata , Norio Fujitsuka
CPC分类号： G01L1/2293 , G01L1/18
摘要： Force detection devices may have high detection precision and may prevent current leakage through a strain gage 126 to the outside. For example, a force detection block 120 may include a semiconductor substrate 122, a first insulating layer 124 and a semiconductor layer 126 (strain gage). The strain gage 126 preferably includes a site where resistance changes in accordance with the stress acting thereon. The strain gage 126 preferably constitutes at least a portion of a ridge 130 projects from the surface of the force detection block 120. A force transmission block 138 may be attached to a top surface of the ridge 130. The width of the first insulating layer 124 is preferably greater than the width of the semiconductor layer 126.
摘要翻译： 力检测装置可以具有高检测精度并且可以防止通过应变计126向外部的电流泄漏。 例如，力检测块120可以包括半导体衬底122，第一绝缘层124和半导体层126（应变片）。 应变计126优选地包括其中电阻根据作用在其上的应力而变化的部位。 应变计126优选地构成从力检测块120的表面突出的隆起130的至少一部分。 力传递块138可以附接到脊130的顶表面。 第一绝缘层124的宽度优选地大于半导体层126的宽度。
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公开(公告)号：US4833929A
公开(公告)日：1989-05-30
申请号：US224764
申请日：1988-07-27
申请人： Yoshiteru Omura , Kazuyoshi Kawaguchi , Kouji Tsukada , Susumu Sugiyama , Sadayuki Hayashi , Masayuki Matsui
发明人： Yoshiteru Omura , Kazuyoshi Kawaguchi , Kouji Tsukada , Susumu Sugiyama , Sadayuki Hayashi , Masayuki Matsui
摘要： A force transducer for detecting compression. The force transducer comprises an Si single crystal so formed as to have a crystal face of {110} as the surface to which compression is applied; a first pair of opposing electrodes provided on the Si single crystal in the direction having an angle of 45 degrees with the direction of of the Si single crystal and a second pair of opposing electrodes provided on the Si single crystal in the direction having an angle of 45 degrees with the direction of of the Si single crystal; a seat which is bonded to the crystal face of {110} of the Si single crystal and which transmits the compression substantially uniformly to the crystal face; and a base which is bonded to the surface of the Si single crystal opposite to the surface bonded with the seat and which supports the Si single crystal. The force transducer has a simple structure as a whole and is capable of detecting compression with accuracy.
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公开(公告)号：US4993266A
公开(公告)日：1991-02-19
申请号：US384817
申请日：1989-07-25
CPC分类号： G01L19/142 , G01L1/18 , G01L19/0084 , G01L19/0645 , G01L19/147 , G01L9/0042 , G01L9/0052 , Y10S73/04
摘要： A semiconductor pressure transducer for detecting a pressure applied to a diaphragm. The pressure transducer comprises a diaphragm and a pressure detector including an Si single crystal which is so formed as to have a crystal face of {110 } as the surface to which a compression force is applied, and which is attached to the pressure detector such that the crystal face is parallel to the diaphragm, a first pair of opposing electrodes provided on the Si single crystal in the direction having an angle of 45 degrees with the direction of on the crystal face of {110 } and a second pair of opposing electrodes provided on the Si single crystal in the direction having an angle of 45 degrees with the direction of of the Si single crystal, either of the first or second pair of electrodes serving as output electrodes and the other pair serving as input electrodes and composite seat with one end thereof bonded to the crystal face of {110 } of the Si single crystal so as to transmit the pressure applied to the diaphragm perpendicularly to the crystal face of the Si single crystal as a compression force. The pressure applied to the diaphragm acts perpendicularly to the crystal face of the Si single crystal as a compression force and the output electrodes output a voltage corresponding to the compression force.
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公开(公告)号：US5349873A
公开(公告)日：1994-09-27
申请号：US92480
申请日：1993-07-16
IPC分类号： G01L1/16 , G01L1/18 , G01L9/00 , G01L9/06 , G01L9/08 , G01L23/10 , G01L23/22 , G01L9/04 , G01L1/75
CPC分类号： G01L9/0052 , G01L1/18 , G01L9/0058 , G01L9/065 , Y10S73/04
摘要： A force transducer comprising: a silicon semiconductor having a crystal face of (110); a pair of input-output shared electrodes mounted on the crystal face of the silicon semiconductor in mutual confronting relationship in a direction of of the crystal or a direction equivalent to the direction of ; a force transmission block connected to the crystal face of the silicon semiconductor for transmitting a force W perpendicularly to the crystal face; and a support bed supporting the silicon semiconductor and connected to the silicon semiconductor at a face opposite to the crystal face to which the force transmission block is connected, whereby a voltage corresponding to the force W and to be measured is output from the input-output shared electrodes when the force W is applied perpendicularly to the crystal face of the silicon semiconductor via the force transmission block while a current flows in the silicon semiconductor via the input-output shared electrodes.
摘要翻译： 一种力传感器，包括：具有（110）的晶面的硅半导体; 在晶体的<110>方向或与<110>方向相等的方向上以相互面对的关系安装在硅半导体的晶面上的一对输入输出共享电极; 连接到所述硅半导体的所述晶面的力传递块，用于垂直于所述晶体面传递力W; 以及支撑硅半导体并且在与与所述力传递块连接的晶面相对的面处与所述硅半导体连接的支撑床，由此从所述输入输出输出与所述力W对应的电压 当电流经由输入 - 输出共享电极在硅半导体中流动时，通过力传递块垂直于硅半导体的晶面施加力W时的共用电极。
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公开(公告)号：US5341688A
公开(公告)日：1994-08-30
申请号：US995826
申请日：1992-12-23
CPC分类号： G01L1/18
摘要： A force transducer comprises: an N-type silicon single crystal having a crystal face of (110) on which a force is applied; a pair of first electrodes and a pair of second electrodes mounted on the crystal face of (110) of the N-type silicon single crystal, the first electrodes facing in a direction angularly spaced by 135 degrees from a direction of of the crystal, and the second electrodes being angularly spaced by 90 degrees from the first electrodes, one of the pairs of first and second electrodes being adapted to serve as input electrodes and the other being adapted to serve as output electrodes; a force transmission block connected to the crystal face of (110) of the N-type silicon single crystal for transmitting the force perpendicularly to the crystal face; and a support bed supporting the N-type silicon single crystal and connected to the N-type silicon single crystal at a face opposite to the crystal face to which the force transmission block is connected, the support bed being in the form of a planar structure having a horizontal cross-sectional shape with a short axis and a long axis.
摘要翻译： 力传感器包括：具有施加力的晶体面（110）的N型硅单晶; 一对第一电极和一对第二电极，其安装在所述N型硅单晶的（110）的晶面上，所述第一电极面向与所述N型单晶的（001）的方向成角度地间隔135度的方向 并且所述第二电极与所述第一电极成角度地间隔90度，所述一对第一和第二电极中的一个适于用作输入电极，另一个适于用作输出电极; 连接到所述N型硅单晶的（110）的晶面的力传递块，用于垂直于所述晶面传递所述力; 以及支撑N型硅单晶并且在与所述力传递块连接的晶面相对的面上与所述N型硅单晶相连的支撑床，所述支撑床为平面结构 具有短轴和长轴的水平横截面形状。
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公开(公告)号：US07791458B2
公开(公告)日：2010-09-07
申请号：US11984085
申请日：2007-11-13
申请人： Keiichi Shimaoka , Kanae Murata , Yuichi Tanaka , Yoshiteru Omura , Isao Aoyagi , Norio Fujitsuka , Hiroyuki Matsubara
发明人： Keiichi Shimaoka , Kanae Murata , Yuichi Tanaka , Yoshiteru Omura , Isao Aoyagi , Norio Fujitsuka , Hiroyuki Matsubara
IPC分类号： B60Q1/00
CPC分类号： B60Q1/085 , B60Q1/525 , B60Q9/008 , B60Q2300/112 , B60Q2300/122 , B60Q2300/45 , B60Q2400/50 , B60T2210/32
摘要： An alerting illumination device, which includes a detecting component, a danger degree estimating component, a danger assuming component, an illuminating component and a controlling component, is provided. The danger degree estimating component estimates a degree of danger, with respect to a subject vehicle, of the person detected by the detecting component. The danger assuming component, on the basis of the estimated degree of danger, assumes whether or not the person detected by the detecting component is a danger with respect to the subject vehicle. The illuminating component illuminates light. The controlling component, in a case in which the danger assuming component assumes that the person is a danger, controls the illuminating component such that light, which shows a direction of the person who is assumed to be a danger and a distance to the person, is illuminated onto a road surface.
摘要翻译： 提供了一种警报照明装置，其包括检测部件，危险度估计部件，危险假定部件，照明部件和控制部件。 危险度估计部件估计由检测部件检测到的人对于本车辆的危险程度。 基于估计的危险程度的危险假设部件假设检测部件检测到的人是否对于本车辆是危险的。 照明组件照亮光。 控制部件在危险假定部件假定人为危险的情况下，控制照明部件，使得显示被假定为危险的人的方向和与人的距离的光， 被照亮到路面上。
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公开(公告)号：US08816451B2
公开(公告)日：2014-08-26
申请号：US13035186
申请日：2011-02-25
申请人： Hirofumi Funabashi , Yutaka Nonomura , Yoshiyuki Hata , Motohiro Fujiyoshi , Teruhisa Akashi , Yoshiteru Omura
发明人： Hirofumi Funabashi , Yutaka Nonomura , Yoshiyuki Hata , Motohiro Fujiyoshi , Teruhisa Akashi , Yoshiteru Omura
摘要： In a MEMS structure, a first trench which penetrates the first layer, the second layer and the third layer is formed, and a second trench which penetrates the fifth layer, the forth layer and the third layer is formed. The first trench forms a first part of an outline of the movable portion in a view along the stacked direction. The second trench forms a second part of the outline of the movable portion in the view along the stacked direction. At least a part of the first trench overlaps with the first extending portion in the view along the stacked direction.
摘要翻译： 在MEMS结构中，形成贯穿第一层，第二层和第三层的第一沟槽，形成贯穿第五层，第四层和第三层的第二沟槽。 第一沟槽沿着堆叠的方向形成可动部分的轮廓的第一部分。 第二沟槽沿着堆叠方向在视图中形成可动部分的轮廓的第二部分。 第一沟槽的至少一部分沿着堆叠方向在视图中与第一延伸部分重叠。
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